論文

• K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration, IEEE Journal of the Electron Devices Society, IEEE, Vol. 6, pp. 1251 - 1257, Nov. 2018.  公式リンク  
  
• Y. Hibino, S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Investigation on Mo1-xWxS2 Fabricated by Co-Sputtering and Post-Deposition Sulfurization with (t-C4H9)2S2, JPN J APPL PHYS, 57, 06HB04, May 2018.
• K. Matsuura, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization, Journal of Electrical Materials, Springer US, Vol. 47, No. 7, pp. 3497, Mar. 2018.
• Y. Hibino, S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, H. Wakabayashi, A. Ogura. Band gap-tuned MoS2(1-x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process, Journal of Materials Research, Vol. 32, No. 16, 2017.
• S. Ishihara, Y. Hibino, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudo, H. Wakabayashi, A. Ogura. Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor, MRS Advances, Vol. 2, No. 29, 2017.
• Y. Hibino, S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudo, H. Wakabayashi, A. Ogura. Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition, MRS Advances, Vol. 2, No. 29, 2017.
• Y. Hibino, N. Sawamoto, K. Suda, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2, Japan Journal of Applied Physics, Vol. 55, 2016.
• S. Ishihara, Y. Hibino, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Wakabayashi, A. Ogura. Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS2 Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast, ECS J. Solid State Sci. Technol., Vol. 5, No. 11, 2016.
• S. Ishihara, Y. Hibino, N. Sawamoto, K. Suda, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2, Japan Journal of Applied Physics, Vol. 55, 2016.

国際会議発表 (査読有り)

• S. Ishihara, Y. Hibino, N. Sawamoto, T. Ohashi, K. Matsuura, H. Wakabayashi, A. Ogura. Centimeter-scale high-performance few-layer MoS2 fabricated by RF magnetron sputtering and subsequent post-deposition annealing, International Conference on Solid State Devices and Materials, Sept. 2018.
• S. Ishihara, Y. Hibino, N. Sawamoto, T. Ohashi, K. Matsuura, H. Wakabayashi, A. Ogura. Low-temperature solid-phase crystallization of sputtering deposited quasi-layered MoS2 thin film, The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18), Aug. 2018.
• S. Ishihara, Y. Hibino, N. Sawamoto, K. Suda, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor, MRS Spring Meeting & Exhibit, Mar. 2018.
• K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, pp. 104-106, Mar. 2018.
• Y. Hibino, S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Investigation of MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition, MRS Spring Meeting & Exhibit, Mar. 2018.
• K. Matsuura, T. Ohashi, I. Muneta, S. Ishihara, N. Sawamoto, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film, Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC), 2016.
• S. Ishihara, Y. Hibino, N. Sawamoto, K. Suda, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Fabrication of High-Quality Single- and Few-Layer MoS2 Films by Combination of Sputtering Deposition and Post-Deposition Sulfurization Annealing, MRS Fall Meeting & Exhibit, 2015.
• S. Ishihara, K. Suda, Y. Hibino, N. Sawamoto, T. Ohashi, S. Yamaguchi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Evaluation of Sputtering Deposited 2-Dimensional MoS2 Film by Raman Spectroscopy, MRS Proceedings, 1781, 11, 2015.
• S. Ishihara, K. Suda, Y. Hibino, N. Sawamoto, T. Ohashi, S. Yamaguchi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Improving Crystalline Quality of Sputtering Deposited MoS2 Thin Film by Post-Deposition Sulfurization Annealing Using (t-C4H9)2S2, International Conference on Solid State Devices and Materials, 2015.
• S. Ishihara, Y. Hibino, N. Sawamoto, K. Suda, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Properties of Single-Layer MoS2 Film Fabricated by Combination of Sputtering Deposition and Post-Deposition Sulfurization Annealing Using (t-C4H9)2S2, International Microprocesses and Nanotechnology Conference (MNC), 2015.
• Y. Hibino, S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura. Low Temperature Formation of Layered MoS2 by Sulfurization of E-Beam Evaporated Mo Thin Film Using (t-C4H9)2S2, MRS Fall Meeting & Exhibit, 2015.
• M. Hino, K. Nagata, T. Yoshida, D. Kosemura, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ogura, T. Hattori, H. Iwai. Study on Stress Memorization by Argon Implantation and Annealing, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Tsutsui, M. Watanabe, Y. Nakagawa, T. Matsuda, Y. Yoshida, E. Ikenaga, K. Kakushima, P. Ahmet, H. Nohira, T. Maruizumi, A. Ogura, T. Hattori, H. Iwai. New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy, the 38th European Solid-State Device Research Conference (ESSDERC2008), Sept. 2008.

国内会議発表 (査読有り)

• 日野雅文, 吉田哲也, 小瀬村 大亮, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 小椋 厚志, 服部健雄, 岩井洋. SiN応力膜によるSi基板への歪記憶の検討, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 883, Mar. 2008.

国内会議発表 (査読なし・不明)

• 門 龍翔, 横川 凌, 沼沢 陽一郎, 筒井 一生, 角嶋 邦之, 小椋 厚志. Si-IGBT作製プロセスにおける水素熱処理の影響, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 松浦 賢太朗, 濱田 昌也, 坂本 拓朗, 谷川 晴紀, 宗田 伊理也, 石原 聖也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 松浦 賢太朗, 清水 淳一, 外山 真矢人, 大橋 匠, 宗田 伊理也, 石原 聖也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. 大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 大橋 匠, 坂本 拓朗, 松浦 賢太朗, 清水 淳一, 外山 真矢人, 石原 聖也, 日比野 祐介, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. Migration制御したスパッタリング法による2次元層状MoS2成膜, 第65回応用物理学会春季学術講演会, Mar. 2018.
• 中山寛人, 日野雅文, 永田晃基, 小瀬村大亮, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 小椋厚志, 服部健雄, 岩井洋. As注入とSiN応力膜によるpoly-Siへの歪記憶の検討, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 869, Mar. 2009.
• 中山寛人, 日野雅文, 服部健雄, 杉井信之, 筒井一生, パールハットアヘメト, 角嶋邦之, 小椋厚志, 永田 晃基, 吉田 哲也, 小瀬村大亮, 岩井洋. Ar注入とSiN応力膜によるパターン付Si基板への歪記憶技術の検討, 秋季第69回応用物理学会学術講演会, 応用物理学会, 応用物理学会, No. 2, pp. 743, Sept. 2008.

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