論文

• Miranda Enrique, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J.Sune, HIROSHI IWAI. Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown, [Microelectronic Engineering, Vol. 109, pp. 322-325, Sept. 2013.
• Miranda Enrique, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Analysis and Simulation of the Postbreakdown I-V Characteristics of n-MOS Transistors in the Linear Response Regime, IEEE ELECTRON DEVICE LETTERS, Vol. 34, No. 6, pp. 798-800, June 2013.
• Miranda Enrique, shinichi kano, 竇春萌, J. Sune, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Effect of an ultrathin SiO2 interfacial layer on the hysteretic current-voltage characteristics of CeOx-based metal-insulator-metal structures, Thin Solid Films, Vol. 533, pp. 38-42, Apr. 2013.
• Miranda Enrique, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown, Microelectronics Reliability, Vol. 52, pp. 1909-1912, 2012.
• Miranda Enrique, shinichi kano, C. Dou, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Nonlinear conductance quantization effects in CeO/SiO-based resistive switching devices, APPLIED PHYSICS LETTERS, Vol. 101, 01291, 2012.
• Miranda Enrique, Molina Reyes Joel, Y Kim, HIROSHI IWAI. Tunneling in sub-5nm La2O3 Deposited by E-beam Evaporation, Journal of Non-Crystalline Solids, Science Direct, Vol. 352, pp. 92-97, Jan. 2006.
• Miranda Enrique, HIROSHI IWAI, Molina Reyes Joel, Y Kim. Degradation of High-K La2O3 Gate Dielectrics Using Progressive Electrical Stress, Microelectronics Reliability, Science Direct, No. 45, pp. 1365-1369,, May 2005.

国際会議発表 (査読有り)

• S. Kano, C. Dou, M. Hadi, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, E. Miranda, T. Hattori, H. Iwai. Influence of Electrode Material for CaOx Based Resistive Switching, China Semiconductor Technology International Conference (CSTIC), Mar. 2012.

国際会議発表 (査読なし・不明)

• Miranda Enrique, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Modeling of the Output Characteristics of Advanced N-MOSFETs After a Severe Gate-to-Channel Dielectric Breakdown, Insulating Films on Semiconductors(INFOS 2013), 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, Miranda Enrique, takeo hattori, HIROSHI IWAI. Influence electrode materials on CeOx based resistive switching, CSTIC 2012, 2013.
• Miranda Enrique, shinichi kano, 竇春萌, J. Sune, Kuniyuki KAKUSHIMA, HIROSHI IWAI. New experimental evidences of conductance quantization in electroformed oxide stacks, E-MRS 2012 Spring Meeting, 2012.

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