論文

• 小山将央, M. Casse, R. Coquand, S. Barraud, C. Vizioz, C. Comboroure, P. Perreau, V. Maffini-Alvaro, C. Tabone,, L. Tosti, S. Barnola, V. Delaye, F. Aussenac, G. Ghibaudo, HIROSHI IWAI, G. Reimbold. Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs, Solid-State Electronics, Vol. 84, pp. 46-52, June 2013.

国際会議発表 (査読有り)

• 小山将央, M. Casse, R. Coquand, S. Barraud, G. Ghibaudo, HIROSHI IWAI, G. Reimbold. Influence of Technological and Geometrical Parameters on Low-frequency Noise in SOI Omega-gate Nanowire MOSFETs, 2014 International Symposium on VLSI Technology, Systems and Applications(2014 VLSI-TSA), 2014.
• 小山将央, M. Casse, S. Barraud, G. Ghibaudo, HIROSHI IWAI, G. Reimbold. Assessment of Technological Device Parameters by Low-frequency Noise Investigation in SOI Omega-gate Nanowire NMOS FETs, 15th ULIS Conference, April 9, 2014, ,, 2014.
• 小山将央, M. Casse, R. Coquand, S. Barraud, G. Ghibaudo, HIROSHI IWAI, G. Reimbold. Influence of Device Scaling on Low-frequency Noise in SOI Tri-gate Si Nanowire N-and PMOS FETs, ESSDERC 2013, 2013.

国際会議発表 (査読なし・不明)

• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Size dependent resistivity change of Ni-silicides in nano-region, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 小山将央, Naoto Shigemori, Kenji Ozawa, Kiichi Tachi, Kuniyuki KAKUSHIMA, O. Nakatsuka, 大毛利健治, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Keisaku Yamada, HIROSHI IWAI. Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source, 41st European Solid-State Device Research Conference, 2013.
• Kazuki Matsumoto, 小山将央, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si fin and nanowire structures, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 宋 禛漢, 小山将央, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, 中塚理, 大毛利健治, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Keisaku Yamada, HIROSHI IWAI. Atomically flat Ni-silicide/Si interface using NiSi2 sputtering, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width, International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• M. Casse, S. Barraud, R. Coquand, 小山将央, D. Cooper, C. Vizioz, C. Comboroure, P. Perreau, V. Maffini-Alvaro, C. Tabone, L. Tosti, S. Barnola, V. Delaye, F. Aussenac, G. Ghibaudo, HIROSHI IWAI, G. Reimbold. Strain-Enhanced Performance of Si-Nanowire FETs, ECS 223nd Meeting, ECS Transactions, Vol. 53, No. 3, pp. 125-136, 2013.
• 小山将央, M. Casse, R. Coquand, S. Barraud, G. Ghibaudo, HIROSHI IWAI, G. Reimbold. Study of Low-frequency Noise in SOI Tri-gate Silicon Nanowire MOSFETs, 22nd ICNF, 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 小山将央, M. Casse, R. Coquand, S. Barraud, HIROSHI IWAI, G. Ghibaudo, G. Reimbold. Study of Carrier Transport in Strained and Unstrained SOI Tri-gate and Omega-gate Si Nanowire MOSFETs, ESSDERC 2012, 2012.
• 小山将央, Naoto Shigemori, Hideaki Arai, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Lateral encroachment of Ni silicide into silicon nanowire, Taiwan-Japan Workshop on “Nano Devices”, 2011.

国内会議発表 (査読なし・不明)

• 松本一輝, 小山将央, 呉研, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討, 第72回応用物理学会学術講演会, 2011.
• 小山 将央, 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋. 窒素導入によるSiナノワイヤ内へのNiシリサイド侵入抑制機構の検討, 第７１回応用物理学会学術講演会, Sept. 2010.
• 小山将央, 茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Lateral encroachment of Ni silicide into Si nanowire, 複合創造領域シンポジウム, 2010.

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