論文

• Chun-Hua Chen, Naoki Wakiya, Atsushi saiki, Kazuo Shinozaki, Nobuyasu Mizutani. Defects in heteroepitaxial CeO₂/YSZ/Si(001) films by precise X-ray rocking curves distributions fitness, Abstract of The 21st International Conference on defects in Semiconductors, pp. PB116-343, 2002.
• 佐伯淳. タングステンブロンズ系薄膜の高温Ｘ線逆格子空間マップ測定, 日本セラミックス協会2002年年会講演予稿集, pp. 15, 2002.
• K.Hondou, Y.Fujiwara, T.Kato, K.Iio, A.Saiki, M.Usuda, N.Hamada. Reinvestigation of magnetism and electric transport in a ternary transition metal chalcogenide Rb₂Ni₃S₄, J. Alloys and Compounds, No. 333, pp. 274-281, 2002.
• K. Shinozaki, A. Endo, A. Iwasaki, A. Saiki, N. wakiya, N. Mizutani. Preparation of PZT thin film with compositionally gradient buffer layer by pulsed MO-source CVD, Dielectric Msataerials and Devices, Ed. by K. M. Nair, The American Ceramic Society, et. al, pp. 47-55, 2002.
• C.H.Chen, A. Saiki, N. Wakiya, K. Shinozaki, N. Mizutani. Distinct correlation between CeO₂ and YSZ in out-of-place and in-place mosaic dispersions of heteroepitaxial CeO₂/YSZ/Si(001) films, Appl. Phys. A, No. 74, pp. 693-697, 2002.
• 佐伯淳. セラミックス薄膜の高温格子変化における基板及びバッファー層の影響, 日本セラミックス協会2002年秋季シンポジウム講演予稿集, pp. 209, 2002.
• Takaya Akashi, Yuka Mizuno, Makoto Nanko, Toshio Maruyama, Atsushi Saiki, Kaori Tsukui, Jun Tanabe. Determination of Diffusion Coefficient of Nd³⁺ in NdCrO₃ Based on Solid State Reaction, Materials Transactions, Vol. 42, No. 7, pp. 1411-1416, 2001.
• Chun-Hua Chen, Naoki Wakiya, Astushi Saiki, Takanori Kiguchi, Kazuo Shinozaki, Nobuyasu Mizutan. Defects in heteroepitaxial CeO₂/YSZ/Si(001) films by precise X-ray rocking curve distribution fitness, Physica B, No. 308-310, pp. 1050-1053, 2001.
• Takayuki Watanabe, Atsushi Saiki, Keisuke Saito, Hiroshi Funakubo. Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi₄Ti₃O₁₂ thin films prepared by metalorganic chemical vapor deposition, J. Applied Physics,, Vol. 189, No. 7, pp. 3934-3938, 2001.
• Atsushi Saiki, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani. Improved Measurement Method for Spatial Orientation of Thin Film Distorted by the Substrate, Abstract of the 4th International Meeting of Pacific Rim Ceramic Societies 2001, pp. PAC3-D-27-2001, 2001.
• Chun-Hua Chen, Naoki Wakiya, Atsushi Saiki, Kazuo Shinozaki, Nobuyasu Mizutani. Effects of residual stress on mosaic dispersion of nano-heteroepitaxial CeO₂/YSZ/Si(001) films by high resolution Xray diffraction, 日本セラミック協会2001年年会講演予稿集, pp. 79, 2001.
• 佐伯　淳, 篠崎和夫, 水谷惟恭. 薄膜の基盤による配向方位微細変動の理解のための空間的配向方位測定法, 日本セラミックス協会　2001年年会講演予稿集, pp. 212, 2001.
• Chun-Hua Chen, Atsushi Saiki, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani. Influence of ultra-thin YSZ layer on heteroepitaxial CeO₂/YSZ/Si(001) films analyzed by X-ray reciprocal space map, J.of Crystal Growth, Vol. 219, pp. 253-62, 2000.
• Hiroshi UCHIDA, Atsushi SAIKI, Naoki WAKIYA, Kazuo SHINOZAKI, Nobuyasu MIZUTANI. Effect of the resideal stress induced by external stress application on dielectric properoties of epitaxial lead titanate film, J.Ceram.Soc.Japan, Vol. 108, No. 1, pp. 21-25, 2000.
• Kazuo Shinozaki, Ayanori Endo, Akinori Iwasaki, Atsushi Saiki, Naoki Wakiya, Nobuyasu Mizutani. Controlling the Residual Stress in PZT Thin Film by Introducing Differernt Buffer Layers, Extended Abstracts of The 1st Asian Meeting on Electroceramics and The 20th Electronics Division Meeting, pp. 49-49, 2000.
• 陳　軍華, 脇谷尚樹, 佐伯　淳, 篠崎和夫, 水谷惟恭. Relationship between YSZ Thicness and Dislocation Densities of both YSZ and CeO2 Layers in Heteroepitaxial CeO₂/YSZ/Si(001) Films Determined by X-ray Rocking Curves Fitness, 日本セラミック協会第１６回関東支部研究発表会講演予稿集, pp. 74-75, 2000.
• 佐伯　淳, 篠崎和夫, 水谷惟恭. 応力を印加して成膜したジルコニア薄膜における配向方位分布と残留歪, 日本セラミック協会2000年年会講演予稿集, pp. 181-81, 2000.
• 渡辺隆之, 石川勝之, 佐伯　淳, 斉藤啓介, 舟窪　浩. エピタキシャル成長Bi₄Ti₃O₁₂薄膜のMOCVD合成と電気的特性評価（2）非ｃ軸配向, 春季応用物理学会講演予稿集, pp. 30a-P11-25, 2000.
• 渡辺隆之, 佐伯　淳, 斉藤啓介, 舟窪　浩. エピタキシャル成長Bi₄Ti₃O₁₂薄膜のMOCVD合成と電気的特性評価（１）ｃ軸配向, 春季応用物理学会講演予稿集, pp. 30a-P11-23, 2000.
• 石川勝之, 佐伯　淳, 斉藤啓介, 水平　学, 舟窪　浩. ｃ軸配向エピタキシャルBi₂VO_5.5薄膜のMOCVD合成とその評価, 春季応用物理学会講演予稿集, pp. 30a-P11-22, 2000.
• 石川勝之, 舟窪　浩, 東典行, 佐伯　淳, 水平　学, 斉藤啓介. ｃ軸配向Bi₂WO₆薄膜のMOCVD合成とその電気特性, 春季応用物理学会講演予稿集, pp. 30a-P11-24, 2000.
• Hiroshi UCHIDA, Atsushi SAIKI, Naoki WAKIYA, Kazuo SHINOZAKI, Nobuyasu MIZUTANI. Effect of the resideal stress induced by external stress application on dielectric properoties of epitaxial lead titanate film, J.Ceram.Soc.Japan, Vol. 108, No. 1, pp. 21-25, 2000.
• 舟窪浩, 石川勝之, 額賀紀全, 斉藤啓介, 佐伯淳, 鈴木利昌, 西湯二, 藤本正之. エピタキシャル成長SrBi₂Ta₂O₉薄膜のMOCVD合成とその電気的特性, 第３８回セラミックス基礎科学討論会講演要旨集, pp. 354-355, 2000.
• H.Funakubo, K.Ishikawa, N/Nukaga, K.Saito, A.Saiki, T.Suzuki, Y.Nishi, M.Fujimoto. エピタキシャル成長SrBi₂Ta₂O₉薄膜のMOCVD合成とその電気的特性, 第３８回セラミックス基礎科学討論会講演要旨集, pp. 354-55, 2000.
• A.Endo, A.Iwasaki, N.Wakiya, A.Saiki, K.Shinozaki, N.Mizutani. Preparation and Properties of PbTiO₃-PbZrO₃ Thin Films by Pulsed MO-Source CVD Method, Key Engineering Materials (Electroceramics in Japan III), Vol. 181-182, pp. 77-80, 2000.
• C.-Hua Chen, N.Wakiya, A.Saiki, K.Shinozaki, N.Mizutani. Thickness and Roughness Analysis on YSZ/Si(001) Epitaxial Films with Ultra Thin SiO₂ Interface by X-Ray Reflectivity, Key Engineering Materials (Electroceramics in Japan III), Vol. 181-182, pp. 121-24, 2000.
• Hiroshi Uchida, Atsushi Saiki, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani. Effect of the Residual Stress Induced by External Stress Application on Dielectric Properties of Epitaxial Lead Titanate Film, J. Ceram. Soc. Japan, Vol. 108, No. 1, pp. 21-25, 2000.
• 佐伯　淳. 共通施設（Ｘ線分析室）における教育、研究支援, 日本セラミック協会第１６回関東支部研究発表会講演予稿集, pp. 128-129, 2000.
• Naoki Wakiya, Jui-Kai Wang, Atsushi Saiki, Kazuo Shinozaki, Nobuyasu Misutani. Synthesis and Dielectric Properties of Ba1-xR2x/3Nb2O6(R:Rare Earth)with Tetragonal Tungsten Bronze Structure, Journal of European Ceramic Society,, No. 19, pp. 1071-1075, 1999.
• 佐伯　淳, 篠崎和夫, 水谷惟恭. ICPフラッシュ蒸着法によるセラミックス薄膜の配向度基板印加応力依存性, 日本セラミック協会1999年年会講演予稿集, pp. 105, 1999.
• 内田　寛, 佐伯　淳, 脇谷尚樹, 篠崎和夫, 水谷惟恭. 応力印加による強誘電体薄膜の自発分極消失現象, 日本セラミック協会1999年年会講演予稿集, pp. 189, 1999.
• 石川勝之, 佐伯　淳, 斉藤啓介, 舟窪　浩. 非ｃ軸配向エピタキシャルSrBi₂Ta₂O₉薄膜のMOCVD合成とその評価, 第４６回応用物理学関経連合講演会講演予稿集, pp. 563, 1999.
• 佐伯　淳, 篠崎和夫, 水谷惟恭. 応力印加基板を用いて成膜したセラミックス薄膜におけるドメインスイッチングと配向性制御, 日本セラミック協会第１２回秋季シンポジウム, pp. 418, 1999.
• Katsuyuki Ishikawa, Atsushi Saiki, Keisuke Saito, Hiroshi Funakubo. MOCVD preparation of epitaxial SBT film and their properities, Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials, Tokyo, pp. 390-391, 1999.
• A.Saiki, H.Funakubo, N.Mizutani, K.Shinozaki, T.Bak, J.Nowotny, M.Rekas, C.C.Sorrel. Charge transfer between oxygen and zirconia, J.Thermal Analysis and Calorimetry, Vol. 57, pp. 875-881, 1999.
• Takanori Kiguchi, Atsushi Saiki, Kazuo Shinozaki, Nobuyasu Mizutani. Effect of the species of substituted ion on ferroelastic domain switching of rare-earth ion-doped ZrO2 pseudo-single crystals, J. Mater. Res., Vol. 14, No. 1, pp. 142-145, 1999.
• Hiroshi UCHIDA, Takanori KIGUCHI, Atsushi SAIKI, Naoki WAKIYA, Nobuo 　　　ISHIZAWA, Kazuo SHINOZAKI, Nobuyasu MIZUTANI. Measurement technique for the evaluation of residual stress in epitaxial thin film by asymmetric x-ray diffraction, J.Ceram.Soc.Japan,, Vol. 107, No. 7, pp. 606-610, 1999.
• 舟窪　浩, 石川勝之, 額賀紀全, 斉藤啓介, 佐伯　淳. Sr-­Bi-­Ta-­Oエピタキシャル薄膜のMOCVD合成とその結晶構造, 第３７回セラミックス基礎科学討論会講演要旨集, pp. 1213, 1999.
• K.Mukae, N.Mizutani, A.Saiki, X.Li, J.Nowotny, Z.Zhang, T.Bak, C.C.Sorrell. Effect of surface preparation of zirconia on its reactivity with oxygen, J.Aust.Ceramic Soc., Vol. 34, No. 1, pp. 76-79, 1998.
• 佐伯　淳, 藤井義博, 桜井　修, 脇谷尚樹, 篠崎和夫, 水谷惟恭. 超音波噴霧ＩＣＰフラッシュ蒸着法による異種組成ジルコニア薄膜の積層化, J.Ceram.Soc.Japan, Vol. 106, No. 3, pp. 312-316, 1998.
• 桜井　修, 添田　将, 佐伯　淳, 篠崎和夫, 水谷惟恭. 半導性SrTiO3単結晶接合界面の微構造と酸化還元処理によるＩ－Ｖ特性の変化, J. Ceram. Soc. Japan,, Vol. 106, No. 3, pp. 308-311, 1998.
• Naoki WAKIYA, Sung­Yong CHUN, Atsushi SAIKI, Osamu SAKURAI. Influence of atmosphere on phase transitions of praseodymium oxide at high temperature using high temperature x­ray diffraction and thermogravimetry, Thermochimica Acta,, Vol. 313, pp. 55-61, 1998.
• Nobuyasu Ishizawa, Atsushi Saiki, Kyoji Ohdan, Mamoru Ai. Synthesis and powder x­ray diffraction data of a new iron phosphate Fe(PO4)・0.5H2O, Powder Diffraction 13 (4), 246­248(1998), Vol. 13, No. 4, pp. 246-248, 1998.
• 佐伯淳. セリア部分安定化ジルコニアの強弾性ドメインスイッチングの臨界応力に及ぼす軸比の影響, J.Ceram.Soc.Japan,　105 [10] 871?875 (1997), Vol. 105, No. 10, pp. 871-875, 1997.
• 佐伯淳. ジルコニアの強弾性ドメインスイッチングに及ぼす希土類イオン半径の影響, J.Ceram.Soc.Japan,, Vol. 105, No. 9, pp. 775-778, 1997.
• Shenglei CHE, Osamu SAKURAI, Atsushi SAIKI, Hiroshi FUNAKUBO. Evalution of Particle Structure during the Formation of Single-Crystal Spherical Palladium Particles by Spray Pyrolysis, J.Ceram.Soc.Japan,, Vol. 105, No. 4, pp. 299-303, 1997.
• ATSUSHI SAIKI. Effects of applied electrical field on piezoelectric property and compressive strength of PZT, J.Ceram.Soc.Japan, Vol. 105, No. 3, pp. 214-217, 1997.
• Jin­Ho Lim, Sang­Hee Cho, A.Saiki, N.Mizutani. Effects of applied electrical field on piezoelectric property and compressive strength of PZT, J. Ceram. Soc. Japan, Vol. 105, No. 3, pp. 214-217, 1997.
• ATSUSHI SAIKI. Residual Strain and Crystal Structure of BaTiO3­SrTiO3 Thin Films prepared by Metal Organic Chemical Vapor Deposition, Jpn. J.Appl.Phys.,, Vol. 36, No. 9, pp. 6879-5889, 1997.
• 佐伯淳. 3mol%Y2O3­ZrO2の強弾性ドメインスイッチングに及ぼす相分離の影響, J.Ceram.Soc.Japan,, Vol. 105, No. 12, pp. 1136-1140, 1997.
• 木口賢紀, 佐伯淳, 篠崎和夫, 寺山清志, 水谷惟恭. セリア部分安定化ジルコニアの強弾性ドメインスイッチングの臨界応力に及ぼす軸比の影響, 日本セラミックス協会学術論文誌, Vol. 105, No. 10, pp. 871-875, 1997.
• ATSUSHI SAIKI. Texture analysis of domain switching phenomena in Y2O3 doped ZrO2 Crystals, Proceeding of the 2nd International Meeting of Pacific Rim Ceramic Societies, Vol. 3, pp. 57-66, 1996.
• ATSUSHI SAIKI. Effect of stress and temperature on ferroelastic domain switching of partially stabillized zirconia pseudo-single crystals, J. Ceram. Soc. Japan, Vol. 104, No. 6, pp. 529-534, 1996.
• 佐伯淳. 正方晶ジルコニア擬単結晶の強弾性ドメインスイッチングと酸素欠陥の関係, J.Ceram.Soc.Japan., Vol. 104, No. 12, pp. 1106-1111, 1996.
• ATSUSHI SAIKI. Effect of the applied stress on the resistivity of Zirconia Crystals, Proceedings of Annual Meeting of The Ceramic Society of Japan, pp. 29, 1995.
• ATSUSHI SAIKI. Possibility of Domain Switching Phenomenon in Monoclinic Zirconia Single Crystals, Proceedings of Annual Meeting of The Ceramic Society of Japan, pp. 49, 1994.
• ATSUSHI SAIKI. Recovery of Orientation by Domain Switching in Zirconia Single Crystals at High Temperature, Proceedings of Annual Meeting of The Ceramic Society of Japan, pp. 376, 1993.
• ATSUSHI SAIKI. Temperature Dependency of Atomic Position in Pb (Mg┣D11/3┫D1Nb┣D12/3┫D1) O┣D13┫D1 Single Crystal, Advanced Materials '93, V, Trans. Mat. Res. Soc. Jpn., Vol. 14B, pp. 1695-1698, 1993.
• ATSUSHI SAIKI. Crystallographic Orientation in Zirconia Single Crystals at High Temperature by Applied Stress or Residual Stress, Advanced Materials '93, V, Trans. Mat. Res. Soc. Jpn., Vol. 14A, pp. 451-454, 1993.
• ATSUSHI SAIKI. Crystal Growth, Crystal Structure and Chemical Composition of a Pyrochlore Type Compound in Leac-Magnesium-Niobium-Oxygen System., Mat. Res. Bull., No. 28, pp. 137-143, 1993.
• ATSUSHI SAIKI. Formation Mechanism of Oxygen Deficient Region in Electrochemically Reduced Y-PSZ Crystal, J. Ceram. Soc. Japan, Vol. 101, No. 3, pp. 354-358, 1993.
• ATSUSHI SAIKI. Phase Transition and Oxygen Deficiency in Electrochemically Reduced Y-, Ca-PSZ Crystals, J. Ceram. Soc. Japan, Vol. 101, No. 2, pp. 184-189, 1993.
• ATSUSHI SAIKI. Co-Axis Orientatin on Ground Surface of Tetragonal Zirconia Polycrystals, 日本セラミックス協会学術論文集, Vol. 100, pp. 3, 1992.
• ATSUSHI SAIKI. Crystal Growth and Structure Refinement of SeCeO┣D23┫D2 Protonic Conductor, 日本化学会誌, pp. 1, 1991.
• ATSUSHI SAIKI. Synthesis of a New Compound, Ca┣D20.8┫D2Sn┣D22┫D2O┣D27┫D2, with Pyrochlore Structure, Journal of Solid State Chemistry, Vol. 92, pp. 2, 1991.
• ATSUSHI SAIKI. Microstructure and Phase Changes in Yttria-Partially Stabilized Zirconia Crystals Annealed with Electric Currect, 日本セラミックス協会学術論文誌, Vol. 99, pp. 1, 1991.
• ATSUSHI SAIKI. SEM Observation of the Stress Induced Transformation by Vickers Indentatin in Y-PSZ Crystals, セラミックス論文誌, Vol. 97, pp. 1, 1989.
• ATSUSHI SAIKI. Directional Crystal Growth of Yttria-Stabilized Zirconia by Arc Image Floating Zone Method, Journal of Maternal Science Letters., pp. 6, 1987.
• ATSUSHI SAIKI. Twin-Related Tetragonal Vaviants in Yttria Partially-Stabilied Zirconia., Journal of the American Ceramic Society, Vol. 69, pp. 2, 1986.

著書

• 佐伯淳. 島岡達三　陶芸作品特別展, 東工大百年記念館, 東工大百年記念館, 2001.
• 佐伯淳. 共通施設について, 東京工業大学クロニクル, 東京工業大学クロニクル, Vol. 360, No. 11, pp. 9, 2001.
• 舟窪浩, 佐伯淳, 篠崎和夫, 水谷惟恭. 鉛系正方晶ペロブスカイト構造強誘電体薄膜のc軸配向度決定機構の解明, 材料科学，35[4]197-199(1998), 材料科学，35[4]197-199(1998), Vol. 35, No. 4, pp. 197-199, 1998.
• 佐伯　淳, 赤井孝夫. セラミックス薄膜における界面とＭＲＤ(Materials Reserarch Diffractometer)測定, セラミックスデータブック　’９７年版　工業と製品, セラミックスデータブック　’９７年版　工業と製品, Vol. 25, No. 79, pp. 141-149, 1997.
• 水谷惟恭, 篠崎和夫, 佐伯　淳, 脇谷尚樹. セラミックス構造と結晶模型, 材料科学への招待「新しい視点に立って」 培風館, 材料科学への招待「新しい視点に立って」 培風館, pp. 23-34, 1997.
• 佐伯淳. 微構造制御法, サイエンスフォーラム, サイエンスフォーラム, 1990.
• 佐伯淳. アークイメージFZ法による酸化物単結晶の育成, 内田老鶴圃, 内田老鶴圃, 1987.

学位論文

• イットリア部分安定化ジルコニア結晶の析出相形態に及ぼす外部応力の影響,  本文,  工学博士,  東京工業大学,  1989/03/26,   

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