論文

• Y. Hanyu, K. Abe, K. Domen, K. Nomura, H. Hiramatsu, H. Kumomi, H. Hosono, T. Kamiya. Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs, J. Displ. Technol., pp. 979-983, 2014.
• Kazuo Yamada, Kenji Nomura, Katsumi Abe, Satoshi Takeda, Hideo Hosono. Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology, Appl. Phys. Lett., Vol. 105, p. 133503, 2014.
• Takaya Miyase, Ken Watanabe, Isao Sakaguchi, Naoki Ohashi, Kay Domen, Kenji Nomura, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering, ECS J. Solid State Sci. Technol., Vol. 3, pp. Q3085-Q3090, 2014.
• Yuichiro Hanyu, Kay Domen, Kenji Nomura, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors, Appl. Phys. Lett., Vol. 103, No. 20, pp. 202114-1 - 3, Nov. 2013.
• Ken Watanabe, Dong-Hee Lee, Isao Sakaguchi, Kenji Nomura, Toshio Kamiya, Hajime Haneda, Hideo Hosono, Naoki Ohashi. Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere, Appl. Phys. Lett., Vol. 103, pp. 201904-1 - 5, 2013.
• Kenji Nomura, Toshio Kamiya, Hideo Hosono. Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O, ECS J. Solid State Sci. Technol, Vol. 2, pp. 5-8, 2013.
• Mutsumi Kimura, Takayuki Hasegawa, Keisuke Ide, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing, IEEE Electron Dev. Lett., Vol. 33, No. 3, pp. 384-386, Feb. 2012.
• Keisuke Ide, Kenji Nomura, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Structural relaxation in amorphous oxide semiconductor, J. Appl. Phys, Vol. 111, No. 073513, pp. 1 - 6, 2012.
• Hiromichi Ohta, Taku Mizuno, Shijian Zheng, Takeharu Kato, Yuichi Ikuhara, Katsumi Abe, Hideya Kumomi, Kenji Nomura, Hideo Hosono. Unusually Large Enhancement of Thermopower in an Electric Field InducedTwo-Dimensional Electron Gas, Advanced. Materials, Vol. 24, pp. 740-744, 2012.
• Katsumi Abe, Kenji Takahashi, Ayumu Sato, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Operation model with carrier-density dependent mobility for amorphous In-Ga-Zn-O thin-film transistors, Thin Solid Films, Vol. 520, pp. 3791-3795, 2012.
• Keisuke Ide, Yutomo Kikuchi, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors, Thin Solid Films, Vol. 520, pp. 3787-3790, 2012.
• Kenji Nomura, Toshio Kamiya, Hideo Hosono:. Stability and high-frequency operation of amorphous In-Ga-Zn-O thin-film transistors with various passivation layers, Thin Solid Films, Vol. 520, pp. 3778-3782, 2012.
• Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono. Photovoltaic properties of n-type amorphous In-Ga-Zn-O and p-type single crystal Si heterojunction solar cells: Effects of Ga content, Thin Solid Films, Vol. 520, pp. 3808-3812, 2012.
• Mutsumi Kimura, Takayuki Hasegawa, Keisuke Ide, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Maximum applied voltage detector using amorphous In-Ga-Zn-O thin film transistor exposed to ozone annealing, Solid-State Electronics, Vol. 75, pp. 74-76, 2012.
• Dong Hee Lee, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Metal-Semiconductor Field-Effect Transistor Made Using Amorphous In-Ga-Zn-O Channel and Bottom Pt Schottky Contact Structure at 200°C, ECS Solid State Letters, Vol. 1, pp. Q8-Q10, 2012.
• Kyeongmi Lee, Eiji Ikenaga, Takeharu Sugiyama, Keisuke Kobayashi, Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Eiji Ikenaga, Takeharu Sugiyama, Keisuke Kobayashi, Hideo Hosono. Band alignment of InGaZnO₄/Si interface by hard x-ray photoelectron spectroscopy, J. Appl. Phys, Vol. 112,, pp. 033713-1 - 6, 2012.
• Katsumi Abe, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice, Phys. Rev. B Rapid Communications, Vol. 86, pp. 081202(R)-1 - 4, 2012.
• D.H. Lee, K. Nomura, T. Kamiya, H. Hosono. Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200oC on a Flexible Substrate, IEEE Electron Device Letters, Vol. 32, pp. 1695-1697, 2011.
• Keisuke Ide, Yutomo Kikuchi, Kenji Nomura, Mutsumi Kimura, Toshio Kamiya, Hideo Hosono. Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors, Appl. Phys. Lett, Vol. 99, No. 093507, pp. 1 - 3, 2011.
• K. Abe, N. Kaji, H. Kumomi, K. Nomura, T.Kamiya, M. Hirano, H. Hosono. Simple Analytical Model of On Operation of Amorphous In–Ga–Zn–O Thin-Film Transistors, IEEEE Trans. Electron Dev, Vol. 58, 3463-3471, pp. 3463-3471, 2011.
• Kenji Nomura, Toshio Kamiya, Hideo Hosono. Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects, Appl. Phys. Lett.,, Vol. 99, No. 053505, pp. 1 - 3, 2011.
• Tao Chen, Meng-Yue Wu, Ryoichi Ishihara, Kenji Nomura, Toshio Kamiya, Hideo Hosono, C. I. M. Beenakker. Solid-phase epitaxial growth of (111)-oriented Si film on InGaO₃(ZnO)₅ buffer layer, J Mater Sci: Mater Electron, Vol. 22, pp. 920-923, 2011.
• Kenji Nomura, Toshio Kamiya, Hideo Hosono. Ambipolar Oxide Thin-Film Transistor, Adv. Mater., Vol. 23, pp. 3431-3434, 2011.
• Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono. Electronic Structure and Photovoltaic Properties of n-Type Amorphous In-Ga-Zn-O and p-Type Single Crystal Si Heterojunctions, Electrochemical and Solid-State Letters, Vol. 14, pp. H346-349, 2011.
• Kenji Nomura, Toshio Kamiya, Eiji Ikenaga, Hiroshi Yanagi, Keisuke Kobayashi, Hideo Hosono. Depth analysis of subgap electronic states in amorphous oxide semiconductor, a_-In_-Ga_-Zn_-O, studied by hard x_-ay photoelectron spectroscopy, JOURNAL OF APPLIED PHYSICS, Vol. 109, p. 073726, 2011.
• Lijie Shao, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Operation Characteristics of Thin-Film Transistors Using Very Thin Amorphous In-Ga-Zn-O Channels, Electrochemical and Solid-State Letters, Vol. 14, pp. 197-200, 2011.
• Kenji Nomura, Takashi Aoki, kiyosi Nakamura, Toshio Kamiya, Takashi Nakanishi, Takayuki Hasegawa, Mutsumi Kimura, Takeo Kawase, Masahiro Hirano, Hideo Hosono. Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In-Ga-Zn-O and p-type poly-(9,9-dioctylfluorene-co-bithiophene)thin-film transistors, APPLIED PHYSICS LETTERS, vol. 96, pp. 263509-1～263509-3, 2010.
• Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits, APPLIED PHYSICS LETTERS, vol. 97, p. 072111, 2010.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory, Phys. Status Solidi A, vol. 207, pp. 1698-1703, 2010.
• Mutsumi Kimura, Toshio Kamiya, Takashi Nakanishi, Kenji Nomura, Hideo Hosono. Intrinsic carrier mobility in amorphous InGaZnO thin-film transistors determined by combined field-effect technique, APPLIED PHYSICS LETTERS, vol. 96, p. 262105, 2010.
• Y. Nishio, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono. Short-channel nanowire transistor using a nanoporous crystal semiconductor 12CaO•7Al₂O₃, Materials Science and Engineering B, vol. 173, p. 3740, 2010.
• Kenji Nomura, Toshio Kamiya, Hideo Hosono. Interface and bulk effects for bias-light-illumination instability in amorphous-In-Ga-Zn-O thin-film transistors, J. Soc. Inf. Display, vol. 18, p. 789, 2010.
• Hiromichi Ohta, Yukio Sato, Takeharu Kato, SungWng Kim, Kenji Nomura, Yuichi Ikuhara, Hideo Hosono. Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal, Nature Comm., vol. 1, No. 118, pp. 1-6, 2010.
• Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Large Photoresponse in Amorphous InGaZnO and Origin of Reversible and Slow Decay, Electrochemical and Solid-State Letters, vol. 13, pp. H324-H327, 2010.

著書

• 井手啓介, 片瀬貴義, 野村研二, 雲見日出也, 細野秀雄, 神谷利夫. アモルファス酸化物半導体：In－Ga－Zn－O, 21世紀版薄膜作製応用ハンドブック 4編 2章 光部品 7節 透明導電膜, June 2019.
• 野村研二, 神谷利夫, 細野秀雄. 第6章：N型a-In-Ga-Zn-O/P型c-Siヘテロ接合型太陽電池の開発, ; 高効率太陽電池（株式会社エヌ・ティー・エス, ISBN：978-4-86469-034-8）, pp. 306-318, 2012.

国際会議発表 (査読有り)

• M. Kimura, T. Hasegawa, T. Matsuda, K. Ide, K. Nomura, T. Kamiya, H. Hosono. Light Irradiation and Applied Voltage History Sensors Using Amorphous In-Ga-Zn-O Thin- Film Transistors Exposed to Ozone Annealing and Fabricated under High Oxygen Pressure, THE 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES, Digest of AM-FPD2014, Vol. 5-3, p. 319, July 2014.
• T. Hasegawa, M. Inoue, T. Matsuda, M. Kimura, K. Nomura, T. Kamiya, H. Hosono. 3-D Stacked Complementary TFT Devices Using n-Type a-IGZO and p-Type F8T2 TFTs - Comparison between Stacked and Sided Configurations -, Proc. IDW'13, p. AMD6-3L, Dec. 2013.
• T. Kamiya, K. Ide, K. Nomura, H. Kumomi, H. Hosono. Structural Relaxation, Crystallization, and Defect Passivation in Amorphous In-Ga-Zn-O, Proc. IDW'13, p. 478, Dec. 2013.
• Mutsumi Kimura, Takayuki Hasegawa, Masashi Inoue, Kenji Nomura, Toshio Kamiya, Hideo Hosono. 3-D Stacked Complementary TFT Devicesusing n-type -IGZO and p-type F8T2 TFTs Operation Confirmation of NOT and NAND Logic Circuits, SID 2013 DIGEST, Vol. 995-998, p. 3, 2013.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Electronic Structure, Carrier Transport, Defects and Impurities in Amorphous Oxide Semiconductor, SID 2013 DIGEST, Vol. 11-13, No. 4, pp. 1, 2013.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Present Status, Knowledge and Issues of Oxide Semiconductor Technology, Proc.IDW '12 (2012/12/4-7, ) AMD3-1, Vol. 19, pp. 0405-0408, 2012.
• Kazuo Yamada, Kenji Nomura, Satoshi Takeda, Hideo Hosono. Novel approach for preventing atmosphere effects on Vth stability of a-In-Ga-Zn-O thin film transistor by glass sealing, Proc. IDW'11, pp. 1633-1634, 2011.
• Kenji Nomura, Toshio Kamiya, Hideo Hosono. Bias stability for a-In-Ga-Zn-O-TFTs: Origin of threshold voltage instability and the role of thermal annealing and passivation, Proc. IDW'11, pp. 587-590, 2011.
• Hideo Hosono, Kenji Nomura, Toshio Kamiya. An Ambipolar Oxide TFT, SID Digest, Vol. 11, pp. 476-477, 2011.
• Tomomasa Shinozaki, Kenji Nomura, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Epitaxial growth of GaN films on InGaZnO4 single crystalline buffer layer, 6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6), Apr. 2009.
• T. Katase, K. Nomura, H. Yanagi, H. Ohta, T. Kamiya, M. Hirano, H. Hosono. Atomic and electronic structures of ScAlMgO4 and over-grown GaN epitaxial film, 3rd International Symposium on Science and Technology of Advanced Ceramics (STAC-3),, 2009.
• T. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono. Atomically-flat ScAlMgO4 single-crystalline films fabricated by reactive solid-phase epitaxy (R-SPE): Effects on growth of ZnO and GaN, 2008 Euro Mater. Res. Soc. Fall Meeting, 2008.
• T. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono. Low-Temperature, Large-Domain Growth of ZnO and GaN Epitaxial Films on Lattice-Matched Buffer Layers, STAC-STSI, 2008.
• T. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono. Fabrication of ScAlMgO4 single-crystalline thin films and its application to lattice-matched buffer layer for ZnO, Korea-Japan Workshop on Nanomaterials for IT, Thin Solid Films,, Vol. 516, pp. 5842-5846, 2007.

国内会議発表 (査読有り)

• 篠崎智正, 野村研二, 片瀬貴義, 神谷利夫, 平野正浩, 細野秀雄. 層状酸化物結晶InGaZnO4の単結晶薄膜作製とバッファー層への応用, 薄膜材料デバイス研究会 第６回研究集会, Nov. 2009.
• 片瀬貴義, 野村研二, 太田裕道, 柳博, 神谷利夫, 平野正浩, 細野秀雄. R-SPE法によるScAlMgO4単結晶薄膜の作製とZnO格子整合バッファ層への応用, 2008年春季 第55回応用物理学関係連合講演会, 2008.
• 片瀬貴義, 野村研二, 篠崎智正, 柳博, 太田裕道, 神谷利夫, 平野正浩, 細野秀雄. GaN薄膜成長におけるScAlMgO4格子整合バッファ層の効果, 薄膜材料デバイス研究会第5回研究集会, 2008.
• 片瀬貴義, 野村研二, 太田裕道, 柳博, 神谷利夫, 平野正浩, 細野秀雄. 反応性固相エピタキシャル成長法におけるホモロガスInGaO3(ZnO)m薄膜成長のBiフラックス効果, 日本セラミックス協会 2007年年会, 2007.
• 片瀬貴義, 野村研二, 太田裕道, 柳博, 神谷利夫, 平野正浩, 細野秀雄. ホモロガス酸化物InGaO3(ZnO)m単結晶薄膜のBiフラックスによる高品質化, 薄膜材料デバイス研究会第3回研究集会, 2006.

その他の論文・著書など

• Keisuke Ide, Kenji Nomura, Hideo Hosono, Toshio Kamiya. Electronic Defects in Amorphous Oxide Semiconductors, A Review; Phys. Status Solidi A, 216, 1800372, 2018.
• 材料の科学と工学, 野村研二, 細野秀雄. 機能性酸化物薄膜と電子デバイス応用, 材料の科学と工学, Vol. 49, pp. 204-208, 2012.
• 細野秀雄, 野村研二. 酸化物TFTの最近の動向と展望, 月刊ディスプレイ, Jan. 2011.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Present status of amorphous InGaZnO thin-film transistors, Sci. Technol. Adv. Mater., vol. 11, pp. 044305-1 - 23, 2010.

特許など

• 細野秀雄, 野村研二, 神谷利夫. アモルファス酸化物半導体を活性層とした薄膜トランジスタ構造とその製造方法. 特許. 登録. 国立大学法人東京工業大学. 2012/07/03. 特願2012-149286. 2014/01/20. 特開2014-011425. 特許第5946130号. 2016/06/10 2016.
• 細野秀雄, 神谷利夫, 野村研二, 中川　克己, 佐野　政史. 非晶質酸化物、及び電界効果型トランジスタ. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2012/07/02. 特願2012-148444. 2012/12/13. 特開2012-248853. 特許第5589030号. 2014/08/01 2014.
• 細野秀雄, 神谷利夫, 野村研二, 安部　勝美. 非晶質酸化物を利用した半導体デバイス. 特許. 公開. 国立大学法人東京工業大学. 2012/06/15. 特願2012-135638. 2012/11/22. 特開2012-231153. 2012.
• 細野秀雄, 野村研二, 神谷利夫, 藪田　久人, 佐野　政史, 岩崎　達哉. 電界効果型トランジスタの製造方法 . 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2012/03/15. 特願2012-058252. 2012/08/30. 特開2012-164986. 特許第5401572号. 2013/11/01 2013.
• 細野秀雄, 野村研二, 神谷利夫, 藪田　久人, 佐野　政史, 岩崎　達哉. 電界効果型トランジスタの製造方法 . 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2012/03/15. 特願2012-058253. 2012/08/30. 特開2012-164987. 特許第5401573号. 2013/11/01 2013.
• 細野秀雄, 野村研二, 神谷利夫, 藪田　久人, 佐野　政史, 岩崎　達哉. 電界効果型トランジスタの製造方法. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2012/03/15. 特願2012-058163. 2012/06/28. 特開2012-124532. 特許第5401571号. 2013/11/01 2013.
• 細野秀雄, 神谷利夫, 野村研二, 雲見　日出也. 画像表示装置. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2012/03/09. 特願2012-053401. 2012/08/09. 特開2012-151485. 特許第5401570号. 2013/11/01 2013.
• 細野秀雄, 野村研二, 神谷利夫, 藪田　久人, 佐野　政史, 岩崎　達哉. 電界効果型トランジスタの製造方法 . 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2012/03/15. 特願2012-058087. 2012/08/23. 特開2012-160740. 特許第5451801号. 2014/01/10 2014.
• 細野秀雄, 野村研二, 山田　和夫, 竹田　諭司. 表示装置とその製造方法. 特許. 公開. 国立大学法人東京工業大学, 旭硝子株式会社. 2011/11/01. 特願2011-240461. 2013/05/20. 特開2013-097195. 2013.
• 細野秀雄, 神谷利夫, 野村研二, 佐野　政史, 中川　克己. 非晶質酸化物、及び電界効果型トランジスタ. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2011/07/15. 特願2011-156723. 2011/12/08. 特開2011-249823. 特許第5337849号. 2013/08/09 2013.
• 細野秀雄, 野村研二, 神谷利夫. 同時両極性電界効果型トランジスタ及びその製造方法. 特許. 登録. 国立大学法人東京工業大学. 2011/03/01. 特願2011-044517. 2012/09/20. 特開2012-182329. 特許第5735306号. 2015/04/24 2015.
• 細野秀雄, 野村研二, 神谷　利夫, 藪田　久人, 佐野　政史, 岩崎　達哉. 電界効果型トランジスタの製造方法. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2005/11/09. 特願2005-325369. 2006/06/22. 特開2006-165531. 特許第5126730号. 2012/11/09 2012.
• 細野秀雄, 野村研二, 神谷利夫, 佐藤　政史, 中川　克己. 電界効果型トランジスタ. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2005/11/09. 特願2005-325371. 2006/06/29. 特開2006-173580. 特許第5118812号. 2012/10/26 2012.
• 細野秀雄, 神谷利夫, 野村研二, 長田　芳幸. 電界効果型トランジスタ. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2005/11/09. 特願2005-325364. 2006/06/22. 特開2006-165527. 特許第5118810号. 2012/10/26 2012.
• 細野秀雄, 神谷利夫, 野村研二, 田　透, 岩崎　達哉. 発光装置及び表示装置. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2005/11/09. 特願2005-325367. 2006/07/13. 特開2006-186319. 特許第5118811号. 2012/10/26 2012.
• 細野秀雄, 神谷利夫, 野村研二, 安部　勝美. 非晶質酸化物を利用した半導体デバイス. 特許. 登録. 国立大学法人東京工業大学, キヤノン株式会社. 2005/11/09. 特願2005-325370. 2006/06/22. 特開2006-165532. 特許第5053537号. 2012/08/03 2012.

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