論文

• Yasunori Kitaichi, Koji Kawasaki, Misaichi Takeuchi, Yoshinobu Aoyagi. Electrical Transport Property of Single-Electron Transistor using a Nano-Vertical GaN Quantum Dot, Extended Abstracts (The 64th Autumn Meeting, 2003) The Japan Society of Applied Physics, Vol. 30p-YF-3/I, pp. 152, 2003.
• Koji Kawasaki, Yasunori Kitaichi, Yoshinobu Aoyagi. Single-electron transistors using a vertical GaN quantum dot for infrared light operations, New Phenomena in Mesoscopic Structures 6 Surfaces and Interfaces in Mesoscopic Devices 4, November 30-December 5, 2003, Wailea Marriott Resort Maui, Hawaii, Vol. P2.28, 2003.
• Koji Kawasaki, Kazuo Tsutsui, Yoshinobu Aoyagi. Control of Electron Transport through Position-Controlled Nitride Quantum Dots and Resonant Tunneling Structure with Variable Enegy Band Alignment , The 2003 CREST Symposium on Function Evolution of Materials and Devices Based on Electron / Photon Related Phenomena, October 30-31, 2003, Kokuyo Hall (Shinagawa), pp. 23, 2003.
• Koji Kawasaki, Ikuo Nakamatsu, Hideki Hirayama, Kazuo Tsutsui, Yoshinobu Aoyagi. Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy, Journal of Crystal Growth, Vol. 243, pp. 129-133, 2002.
• 川崎宏治, 青柳克信. GaN量子ドットの位置制御とデバイス応用（招待講演）, 近接場光学研究グループ　第11回研究討論会　予稿集、東京工業大学　すずかけ台キャンパス、２００２年６月２８日, pp. 69-70, 2002.
• Koji Kawasaki, Hideki Hirayama, Kazuo Tsutsui, Yoshinobu Aoyagi. Selective area growth of nitride nanopillars for future devices, Inter. Workshop on Nitride Semiconductors, 22-25 July 2002, Aachen, Germany., No. 063-A08-206, pp. 107, 2002.
• 井上振一郎, 梶川浩太郎, 川崎宏治, 青柳克信. 非線形光学polynerを用いたフォトニック結晶導波路の作製とバンド構造の観測, 第63回応用物理学会学術講演会,２００２年９月２４日-２７日、新潟大学, No. 24p-YA-8, 2002.
• 谷口学, 川崎宏治, 田昭二, 武内道一, 青柳克信. RF-MBE法によるGaNへのMgとSiの交互供給コドーピング, 第63回応用物理学会学術講演会,２００２年９月２４日-２７日、新潟大学, No. 25p-YG-3, pp. 322, 2002.
• 金井大, 川崎宏治, 平山秀樹, 筒井一生, 青柳克信. GaN量子ドットを用いた単一電子トランジスタの高温動作, 第４９回応用物理学関係連合講演会,２００２年３月２７日-３０日、東海大学（湘南校舎）, No. 27a-YM-10, 2002.
• 川崎宏治, 金井大, 平山秀樹, 筒井一生, 青柳克信. 選択成長法により形成した縦型GaN/AlN量子ドットを用いた単一電子素子の作製, 第４９回応用物理学関係連合講演会,２００２年３月２７日-３０日、東海大学（湘南校舎）, No. 27a-YM-9, 2002.
• 川崎宏治, 青柳克信. 縦型GaN量子ドットの単一電子輸送, 第63回応用物理学会学術講演会,２００２年９月２４日-２７日、新潟大学 , No. 26a-S-11, 2002.
• K. Kawasaki, D. Yamazaki, A. Kinoshita, H. Hirayama, K. Tsutsui, Y. Aoyagi. GaN quantum dot formation by self-assembling droplet epitaxy and application to single-electron transistors, Appl. Phys. Lett., Vol. 79, pp. 2243-2245, 2001.
• 中松郁雄, 川崎宏治, ｱﾄﾞﾘｱﾝｱﾌﾞﾗﾒｽｸ, 平山秀樹, 筒井一生, 青柳克信. GaNナノピラーの選択成長による結合量子ドットの作製, 第６２回応用物理学会学術講演会　講演予稿集、２００１年９月愛知工業大学, Vol. 12a-Q-5, pp. ２６１, 2001.
• 川崎宏治, 筒井一生, 青柳克信. GaN結合量子ドットの形成とその電子輸送特性, 第６２回応用物理学会学術講演会　講演予稿集、２００１年９月愛知工業大学, Vol. 12a-Q-4, pp. ２６１, 2001.
• Koji Kawasaki, Kazuo Tsutsui, Yoshinobu Aoyagi. Fabrication of Single Electron Transistor Using GaN Coupled Quantum Dots, The Second CREST Symposium on Function Evolution of Materials and Devices based on Electron / Photon related Phenomena, October 25, 2001 Kokuyo Hall (Shinagawa), pp. 18, 2001.
• Kazuo Tsutsi, Koji Kawasaki, Yoshinobu Aoyagi. Fabrication of Quantum Dot Arrays with Artificial Site-control Using Electron Beam Surface Modification, The Second CREST Symposium on Function Evolution of Materials and Devices based on Electron / Photon related Phenomena, October 25, 2001 Kokuyo Hall (Shinagawa), pp. 17, 2001.
• Koji Kawasaki, Daisuke Yamazaki, Masaki Suzuki, Kazuo Tsutsui, Yoshinobu Aoyagi. Single Electron Transistor using GaN Coupled Quantum Dots Formed on SiO2/Si Substrate, Extended Abstracts of the 2001 International Conference on SOLID STATE DEVICES AND MATERIALS, Tokyo, 2001, Vol. P-1-16, pp. 430-431, 2001.
• Koji Kawasaki, Daisuke Yamazaki, Ikuo Nakamatsu, Kazuo Tsutsui, Yoshinobu Aoyagi. Formation and Positioning of GaN Nanostructures by Focused Electron Beam Induced Droplet Epitaxy, Abstracts of The Thirteenth International Conference on Crystal Growth in Conjunction with The eleventh International Conference on Vapor Growth and Epitaxy,30 July-4 August 2001, Doshisha University, Kyoto, Japan, Vol. 04p-SB2-10, pp. 580, 2001.
• Koji Kawasaki, Ikuo Nakamatsu, Kazuo Tsutsui, Yoshinobu Aoyagi. Selective Area Growth of GaN Nanopillars by Molecular Beam Epitaxy on AlGaN/SiC(0001) substrate, Abstracts of The Thirteenth International Conference on Crystal Growth in Conjunction with The eleventh International Conference on Vapor Growth and Epitaxy,30 July-4 August 2001, Doshisha University, Kyoto, Japan, Vol. 03a-SB2-05, pp. 414, 2001.
• Koji Kawasaki, Ikuo Nakamatsu, Kazuo Tsutsui, Yoshinobu Aoyagi. Selective Area Growth of GaN Nanopillars on AlGaN/SiC(0001) by Gas Source Molecular Beam Epitaxy, Abstarct of the Fourth International Conference on Nitride Semiconductors, Denver. Colorado USA, July 16-20,2001, Vol. B11.4, pp. 93, 2001.
• Koji Kawasaki, Yasunori Kitaichi, Misaichi Takeuchi, Yoshinobu Aoyagi. Single-Electron Transistors with Large-Energy Binary States in a GaN Quantum Dot , Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, Tokyo, Vol. E-7-4, pp. 836-837, 2003.
• Koji Kawasaki, Choshiro Koike, Misaichi Takeuchi, Yoshinobu Aoyagi. Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique, Applied Physics Letters, Vol. 89, No. 26, pp. 26111, Dec. 2006.
• Koji Kawasaki, Daisuke Yamazaki, Ikuo Nakamatsu, Kazuo Tsutsui, Yoshinobu Aoyagi. Fabrication of GaN Coupled Dots Structure by Focused Electron Eeam Induced Droplet Epitaxy and Application to Single Electron Transistors, Abstracts of The 45th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, The J.W.Marriott Hotel Washington, DC, May 29 -June 1, 2001, Vol. 9-5, pp. 315, 2001.
• 川崎宏治, 山崎大輔, 筒井一生, 青柳克信. 液滴エピタキシー法により自然形成させたGaN量子ドットの光学特性, 第４７回応用物理学関係連合講演会,2000.3、青山学院大学, Vol. 29p-YQ-12, pp. 365, 2000.
• Koji Kawasaki, Daisuke Yamazaki, Kazuo Tsutsui, Yoshinobu Aoyagi. Site-Control of Self-Assembling GaN Quantum Dots and Fabrication of Single Electron Transistors, Abstarcts of Material Research Society 2000 Fall meeting, November 27 - December 1, Boston, Massachusetts, USA, pp. 172, 2000.
• Koji Kawasaki, Daisuke Yamazaki, Ikuo Nakamatsu, Kazuo Tsutsui. Position Control of GaN Quantum Dots by Focused Electron Beam Induced Droplet Epitaxy and Fabrication of Single Electron Transistors, The First CREST Symposium on Function Evolution of materials and Devices based on Electron/Photon Related Phenomena, October 26, 2000 JA Hall (Ohtemachi), pp. 18, 2000.
• 山崎大輔, 川崎宏治, 筒井一生, 青柳克信. 電子ビーム位置制御液滴エピタキシー法によるGaN量子ドットアレイの形成, 第４７回応用物理学関係連合講演会,2000.3、青山学院大学, Vol. 29p-Y-13, pp. 365, 2000.
• 山崎大輔, 川崎宏治, 筒井一生, 青柳克信. 電子ビーム位置制御液滴エピタキシー法によるGaNドットの近接配置, 第６１回応用物理学会学術講演会　講演予稿集、2000.9、北海道工業大学, Vol. 6a-L-10, pp. 311, 2000.
• 川崎宏治, 山崎大輔, 筒井一生, 青柳克信. 自然形成GaNドットを用いた単電子トランジスタの作製, 第６１回応用物理学会学術講演会　講演予稿集、2000.9、北海道工業大学, Vol. 6a-L-1１, pp. 311, 2000.
• K. Kawasaki, M. Mochizuki, K. Tsutusui. Single-Electron Devices Formed by Self-Ordering Metal Nanodroplet Arrays on Epitaxial CaF_２ Film, Jpn. J. Appl. Phys. 38 (1B), 418-420, 1999.
• K. Kawasaki, K. Tsutsui. Heteroepitaxy of GaAs on GaF_２/Si(111) by Surface Free Energy Modulation Method, Mat. Res. Soc. Symp. Proc., Vol. 535, pp. 51-56, 1999.
• 川崎宏治, 筒井一生. 二次元島形成法によりCaF_２/Si(111)基板上に成長させたGaAsの表面モホロジー, 第46回応用物理学会関係連合講演会講演予稿集, Vol. 29p-P-/I, 359, 1999.
• K. Kawasaki, K.Tsutsui. Effects of the two-step growth growth method for GaAs grown on CaF₂/Si(111) with electron beam surface modification technique, Jpn.J. Appl. Phys, Vol. 38, No. 3A, pp. 1521-1525, 1999.
• K. Kawasaki, D. Yamazaki, K. Tsutui, Y. Aoyagi. Control of Formation Sites of Self-Assembling GaN Dots by Focused Electron beam Exposure, Mat. Res. Soc. Symp. Abs., W12.2, pp. 429, 1999.
• K. Kawasaki, M. Mochizuki, K. Tsutsui. Single electron devices formed by self-ordering metal nanodroplet arrays on epitaxxial CaF₂ film, Jpn.J. Appl. Phys, Vol. 38, No. 1B, pp. 418-412, 1999.
• 川崎大輔, 川崎宏治, 望月麻理恵, 筒井一生, 青柳克信. 液滴エピタキシー法により形成されるGaN量子ドットの集束電子ビームによる位置制御, 第60回応用物理学会学術講演会講演予稿集, Vol. 2p-W-/I, pp. 283, 1999.
• K. Kawasaki, K. Tsutsui. Multitunneling junction of metal droplets formed on CaF┣D22┫D2 step edges in a self-assembling manner, Japanese Journal of Applied Physics, pp. 37, 1998.
• K. Kawasaki, K. Tsutsui. Surface free energy modification of CaF┣D22┫D2 by atomic-height island formation on heteroepitaxy of GaAs on CaF┣D22┫D2, Applied Surface Science, pp. 130-132, 1998.
• K. Kawasaki, K. Tsutsui. Observations of GaAs/CaF┣D22┫D2 heterointerface formation by electron beam surface modification and its effects, Applied Surface Science, pp. 117-118, 1997.
• K. Kawasaki, K. Tsutsui. Optical in situ observation of electron beam induced surface modification on epitaxial fluoride films, Japanese Journal of Applied Physics, pp. 36, 1997.

国際会議発表 (査読有り)

• K. Tsutsui, A. Himura, M. Mochizuki, K. Kawasaki. High density metal dot array formed by electron beam induced nucleation method, 1999 Int. Microprocesses and Nanotechnology Conferenc, July 1999.
• K. Tsutsui, K. Kawasaki, M. Mochizuki, T. Matsubara. Site controlled metal and semiconductor quantum dots on epitaxial fluoride films, 4th Int. Symp. on New Phenomena in Mesoscopic Structures, Hawaii, Dec. 1998.
• Koji Kawasaki, M. Mochizuki, Kazuo Tsutsui. Single electron transistors formed by self-ordering metal nanodroplet arrays on epitaxial CaF2 film, 2nd Int. Symp. on Formation, Physics and Device Application of Quantum dot Structures (QDS-98), May 1998.
• Koji Kawasaki, Kazuo Tsutsui. Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2, The 4th Int. Symp. on Atomically Controlled Surfaces and Interfaces (ACSI-4), Oct. 1997.
• Koji Kawasaki, Jun Takeshita, Kazuo Tsutsui. Multi-tunneling junctions of metal droplets formed on CaF2 step edges by self-assembling manner, 1997 Int. Conf. on Solid State Devices and Materials (SSDM), Sept. 1997.
• K. Uejima, K. Kawasaki, K. Tsutsui. Fabrication of Ga droplets array site-controlled by electron beam surface modification, The 9th Int. MicroProcess Conf., July 1996.

国際会議発表 (査読なし・不明)

• Koji Kawasaki, Tomohiro Maegawa, Misaichi Takeuchi, Yoshinobu Aoyagi. Fabrication of Deep Ultraviolet Light-Emitting Diodes with a Large Emission Area Using a Laser Lift-Off Technique, 2006 MRS Fall meeting, Materials Research Society, Vol. I15.32, Nov. 2006.
• Ryo Kajitani, Misaichi Takeuchi, Koji Kawasaki, Yoshinobu Aoyagi. Structural Properties of AlxIn1-xN Films Grown by Metalorganic Chemical Vapor Deposition, 2006 MRS Fall meeting, Materials Research Society, Vol. I2.5, Nov. 2006.
• Misaichi Takeuchi, Hiroshi Shimizu, Koji Kawasaki, Yoshinobu Aoyagi. Gowth-mode Alternating Method for High-Quality AlN Layers on Sapphire by Low-Pressure Flow-Modulation MOCVD (TuP1-75), International Workshop on Nitride Semiconductors 2006, The Japan Society of Applied Physics, Vol. TuP1-75, pp. 424, Oct. 2006.
• Koji Kawasaki, Tomohiro Maegawa, Misaichi Takeuchi, Kazuya Takada, Yoshinobu Aoyagi. Vertical AlGaN Deep Ultraviolet light-Emitting Diodes Using a Laser Lift-Off Technique for High Al Content AlGaN (WeOD2-2), International Workshop on Nitride Semiconductors 2006, The Japan Society of Applied Physics, Vol. WeOD2-2, pp. 167, Oct. 2006.
• Misaichi Takeuchi, Ryo Kajitani, Hiroshi Shimizu, Koji Kawasaki, Yoshinobu Aoyagi. Removable Buffer Structures of Vertical-Type AlGaN-Based Deep UV LEDs for Laser Lift-Off Technique (TuP2-40), International Workshop on Nitride Semiconductors 2006, The Japan Society of Applied Physics, Vol. TuP2-40, pp. 483, Oct. 2006.
• M. Takuuchi, H. Shimizu, K. Kawasaki, Y. kumagai, A. Koukitu, Y. Aoyagi. Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD (Tu-A1.3), 13th International Conference on Metal Organic Vapor Phase Epitaxy, Vol. Tu-A1.3, pp. 11, May 2006.
• Misaichi Takeuchi, Shigenori Hayakawa, Ryo Kajitani, Toru Kinoshita, Koji Kawasaki, Kazuya Takada, Yoshinobu Aoyagi. Two-step Annealing of GaN Buffer layers for High-quality AlxGa1-xN (x=0.35) by Low-pressure MOCVD, 2005 Fall Meeting of Material Research Society, pp. FF27.4, Nov. 2005.
• Koji Kawasaki, Choshiro Koike, Misaichi Takeuchi, Yoshinobu Aoyagi. AlGaN Deep Ultraviolet Light-Emitting Diodes with Vertical Structure, 2005 Fall Meeting of Materials Research Society, pp. FF1.2, Nov. 2005.
• Koji Kawasaki, Noriaki Kawaguchi, Chosiro Koike, Toru Kinoshita, Misaichi Takeuchi, Kennji Nomura, Hideo Hosono, Kazuya Takada, Yoshinobu Aoyagi. AlGaN Deep Ultraviolet Light-Emitting Diodes with New Structure, 6th Inter. Conf. on Nitride Semiconductors, pp. Tu-PD2-6, Aug. 2005.
• M. Takeuchi, S. Hayakawa, T. Kinoshita, K. Kawasaki, Y. Aoyagi. New growth procedure of buffer layers for high-quality AlxGa1-xN (x=0.35) by low-pressure MOCVD, 6th Inter. Conf. on Nitride Semiconductors, pp. Th-P-024, Aug. 2005.
• Toru Kinoshita, Misaichi Takeuchi, Koji Kawasaki, Kazuya Takada, Yoshiobu Aoyagi. Effect of AlN nucleation processeson polarity, mosaicity and morpforogy of AlN thin films, 6th Inter. Conf. on Nitride Semiconductors, pp. Th-P-124, Aug. 2005.
• M. Itoh, T. Kinoshita, C. Koike, M. Takeuchi, K. Kawasaki, Y. Aoyagi. Fabrication of GaN-based nanostructure devices by combination of dry and wet etching, 6th International Conference on Nitride Semiconductors, pp. Tu-P-051, Aug. 2005.
• K. Kawasaki, C. Koike, M. Takeuchi, K. Numura, N. Kawaguchi, T. Kinoshita, K. Takada, H. Hosono, Y. Aoyagi. New AlgaN LED structure for high power deep ultraviolet light source, 24th Electronic Materials Symposium, pp. B3, July 2005.
• R, Kajitani, M. takeuchi, T. Kinoshita, S. Hayakawa, K. Kawasaki, Y. Aoyagi. Study of polarization effect in AlGaN/AlGaN double quantum wells, 24th Electronic Materials Symposium, pp. M6, July 2005.
• M. Itoh, T. Kinoshita, C. Koike, M. Takeuchi, K. Kawasaki, Y. Aoyagi. Nano-fabrication of GaN-based striped structures by combination of dry and wet etching, 24th Electronic Materials Symposium, pp. B-7, July 2005.
• Koji Kawasaki, Daisuke Yamazaki, Kazuo Tsutsui, Yoshinobu Aoyagi. Control of formation sites of self-assembling GaN dots by focused electron beam exposure, 1999 Mat. Res. Soc. Fall Meeting, Nov. 1999.

国内会議発表 (査読なし・不明)

• 前川倫宏, 川崎宏治, 武内道一, 青柳克信. 大面積AlGaN系縦型深紫外LEDの作製, 第67回応用物理学会学術講演会, 日本応用物理学会, Vol. 1p-E-3, pp. 359, Aug. 2006.
• 武内道一, 清水博史, 梶谷亮, 川崎宏治, 木下亨, 高田和哉, 青柳克信. サファイヤ基板上へAl極性高品質AlN層を形成する改良型フローモジュレーションMOCVD法, 第67回応用物理学会学術講演会, 日本応用物理学会, Vol. 30p-E-9, pp. 340, Aug. 2006.
• 清水博史, 武内道一, 梶谷亮, 川崎宏治, 青柳克信. 深紫外発光素子用AlGaN層と下地テンプレートAlN層の相関, 第67回応用物理学会学術講演会, 日本応用物理学会, Vol. 30p-E-10, pp. 340, Aug. 2006.
• N. Kawaguchi, K. Kawasaki, M. Takeuchi, T. Kinoshita, K. Takada, Y. Aoyagi. Study on high power AlGaN deep ultraviolet LED fabrication, The 66th Autumn Meeting , 2005; The Japan Society of Applied Physics, pp. 10p-X-10, Sept. 2005.
• M. Takeuchi, S. Hayakawa, R. Kajitani, T. Kinoshita, K. Kawasaki, K. Takada, Y. Aoyagi. In-situ monitoring during LT -GaN-2-step anneal-AlGaN growth in MOCVD by multi-channel reflectmetry, The 66th Autumn Meeting, 2005, The Japan Society of Applied Physics, pp. 7a-N-12, Sept. 2005.
• K. Kawasaki, C. Koike, M. Takeuchi, Y. Aoyagi. Structure for high power vertical AlgaN deep ultraviolet light emitting diode, The 66th Autumn Meeting , 2005; The Japan Society of Applied Physics, pp. 10p-X-11, Sept. 2005.
• M. Itoh, K. Kawasaki, M. Takeuchi, T. Kinoshita, Y. Aoyagi. Fabrication of damage-free nanostructures on AlGaN/GaN single-heterostructure, The 52nd Spring Meeting,2005, The Japan Society of Applied Physics and Related Societies, pp. 1a-N-3, Apr. 2005.
• S. Hayakawa, M. Takeuchi, T. Kinoshita, R. Kajitani, K. Kawasaki, Y. Aoyagi. MOCVD growth of high quality AlGaN layers on thin GaN layers/sapphire substrate, The 52nd Spring Meeting,2005, The Japan Society of Applied Physics and Related Societies, pp. 29p-N-3, Mar. 2005.
• R. Kajitani, M. Takeuchi, T. Kinoshita, S. Hayakawa, K. Kawasaki, Y. Aoyagi. Sutudy of AlxGa1-xN/AlyGa1-yN double quantum well structures, The 52nd Spring Meeting,2005, The Japan Society of Applied Physics and Related Societies, pp. 29p-N-4, Mar. 2005.
• T. Kinoshita, N. Kawaguchi, M. Takeuchi, K. Kawasaki, Y. Aoyagi. Growth and characterization of electrical properties of high Al content p-type AlAGaN, The 52nd Spring Meeting,2005, The Japan Society of Applied Physics and Related Societies, pp. 29p-N-5, Mar. 2005.
• K. Kawasaki, N. Kawaguchi, C. Koike, T. Kinoshita, M. Takeuchi, Y. Aoyagi. Fabrication of AlgaN deep ultraviolet light emitting diode with new structure, The 52nd Spring Meeting,2005, The Japan Society of Applied Physics and Related Societies, pp. 29p-N-6, Mar. 2005.
• F. Hirabayashi, S. Yamada, KOJI KAWASAKI, K. Tsutsui. Dot arrays fabricated by electron beam site control method and its application to single electron devices, Dot arrays fabricated by electron beam site control method and its application to single electron devices, Sept. 2000.

その他の論文・著書など

• 川崎宏治, 武内道一, 青柳克信. 深紫外窒化物系発光バイス, 光学, Vol. 35, No. 5, pp. 246-253, May 2006.
• 青柳克信, 田中悟, 武内道一, 平山秀樹, 川崎宏治. 深紫外発光素子の開発, オーム社, Vol. 92, No. 4, pp. 8-9, Apr. 2005.

特許など

• 川崎宏治, 青柳克信, 北野　雅裕, 池田　善和. 真空加熱プレス機. 特許. 登録. 国立大学法人東京工業大学, 北野精機株式会社. 2007/01/30. 特願2007-018879. 2008/08/14. 特開2008-183587. 特許第5196795号. 2013/02/15 2013.
• 川崎宏治, 青柳克信, 歌野　和弘. レーザーリフトオフ法およびレーザーリフトオフ装置. 特許. 登録. 国立大学法人東京工業大学, 西進商事株式会社. 2005/11/28. 特願2005-342734. 2007/06/14. 特開2007-149988. 特許第4883991号. 2011/12/16 2011.
• 青柳克信, 川崎宏治, 武内　道一(, 木下　亨. 窒化物半導体の製造方法. 特許. 登録. 国立大学法人東京工業大学, 独立行政法人理化学研究所, 株式会社トクヤマ. 2005/03/28. 特願2005-090952. 2006/10/12. 特開2006-278402. 特許第4544628号. 2010/07/09 2010.
• 青柳克信, 川崎宏治, 武内道一. 半導体成長用基板および半導体膜の製造方法. 特許. 公開. 国立大学法人東京工業大学, 独立行政法人理化学研究所, 株式会社トクヤマ. 2004/12/24. 特願2004-374976. 2006/07/13. 特開2006-185962. 2006.

学位論文

• 表面エネルギー変調によるCaF₂/Si(111)基板上へのヘテロ構造形成に関する研究,  本文,  Doctor of Engineering,  東京工業大学,  1998/--/--, 
• Si上GaAs中の熱歪の形状効果に関する研究,  Master of Engineering,  徳島大学,  1991/--/--, 

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