論文

• Toshihiko Kaneda, Daisuke Hirose, Takaaki Miyasako, PhanTrong Tue, Yoshitaka Murakami, Shinji Kohara, Jinwang Li, Tadaoki Mitani, Eisuke Tokumitsu, Tatsuya Shimoda. Rheology printing for metal-oxide patterns and devices, Journal of Materials Chemistry C, Vol. 2, No. 1, pp. 40-49, Feb. 2014.
• Koji Nagahara, Bui Nguyen Quoc Trinh, Eisuke Tokumitsu, Satoshi Inoue, Tatsuya Shimoda. Fabrication of 120-nm-channel-length ferroelectric-gate thin-film transistor by nanoimprint lithography, Jpn. J. Appl. Phys., Vol. 53, pp. 02BC14-1, Jan. 2014.
• Kenichi Umeda, Takaaki Miyasako, Ayumu Sugiyama, Atsushi Tanaka, Masayuki Suzuki, Eisuke Tokumitsu, Tatsuya Shimoda. All solution-processed amorphous oxide thin-film transistors using UV/O3 treatment, Jpn. J. Appl. Phys., Vol. 53, pp. 02BE03-1-5, Jan. 2014.
• Yuichi Nagahisa, Yuichi Harada, Eisuke Tokumitsu. Unipolar behavior in grapheme-channel field-effect-transistors with n-type doped SiC source/drain regions, Appl. Phys. Lett., Vol. 103, No. 22, pp. 223503-1-4, Dec. 2013.
• Phan Trong Tue, Takaaki Miyasako, Koichi Higashimine, Eisuke Tokumitsu, Tatsuya Shimoda. Surface-modified lead-zirconium-titanate system for solution-processed ferroelectric-gate thin-film transistors, Applied Physisces A, Vol. 113-2,, pp. 333-338, Nov. 2013.
• Toshihiko Kaneda, Daisuke Hirose, Takaaki Miyasako, Phan Trong Tue, Yoshitaka Murakami, Shinji Kohara, Jinwang Li, Tadaoki Mitani, Eisuke Tokumitsu, Tatsuya Shimoda. Rheology Printing for Metal-Oxide Patterns and Transistors, Journal of Materials Chemistry C, Vol. 2, pp. 40-49, Nov. 2013.
• Pham Van Thanh, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure, Ferroelectrics Letters Section, Vol. 40, pp. 17-29, Jan. 2013.
• Phan Trong Tue, Takaaki Miyasako, Jinwang Li, Huynh Thi Cam Tu, Satoshi Inoue, Eisuke Tokumitsu, Tatsuya Shimoda. High-performance solution-processed ZrInZnO thin-film transistors, IEEE Transactions on Electron Devices, Vol. 60, No. 1, pp. 320-326, Jan. 2013.
• Pham Van Thanh, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator, JPN. J. APPL. PHYS., Vol. 51, pp. 09LA09-1-5, Sept. 2012.
• Jinwang Li, Eisuke Tokumitsu, Mikio Koyano, Tadaoki Mitani, Tatsuya Shimoda. Highly conductive p-type amorphous oxides from low-temperature solution processing, Appl. Phys. Lett., No. 101, pp. 132104-1-4, Sept. 2012.
• Jinwang Li, Toshihiko Kaneda, Eisuke Tokumitsu, Mikio Koyano, Tadaoki Mitani, Tatsuya Shimoda. P-type conductive amorphous oxides of transition metals from solution processing, Appl. Phys. Lett., No. 101, pp. 052102-1-5, July 2012.
• Eisuke Tokumitsu, Kazuya Kikuchi. Evaluation of Channel Modulation in In2O3/(Bi,La)4Ti3O12 Ferrolectric-Gate Thin Film Transistors by Capacitance-Voltage Measurements, Ferroelectrics, Vol. 429:1, No. 15-21, pp. 305-311, June 2012.
• Yuichi Nagahisa, Eisuke Tokumitsu. Suppression of Hole Current in Graphene Transistors with n-type Doped SiC Source/Drain Regions, Materials Science Forum, Vol. 717-720, pp. 679-682, May 2012.
• Hiroyuki Kameda, Jinwang Li, Dam Hieu Chi, Ayumi Sugiyama, Koich Higashimine, Tomoya Uruga, Hajime Tanida, Kazuo Kato, Toshihiko Kaneda, Takaaki Miyasako, Eisuke Tokumitsu, Tadaoki Mitani, Tatsuya Shimoda. Crystallization of lead zirconate titanate without passing through pyrochlore by new solution process, Journal of the European Ceramic Society, vol. 32, pp. 1667-1680, Feb. 2012.
• Yukihiro Kaneko, Yu Nishitani, Hiroyuki Tanaka, Michihito Ueda, Yoshihisa Kato, Eisuke Tokumitsu, Eiji Fujii. Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O3 stacked structure, Journal of Applied Physics, Vol. 110, No. 8, pp. 084106-1～7, Oct. 2011.
• Yukihiro Kaneko, Yu Nishitani, Michihito Ueda, Eisuke Tokumitsu, Eiji Fujii. A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming, Applied Physics Letters, Vol. 99, pp. 182902-1～3, Oct. 2011.
• Dan Ricinschi, Eisuke Tokumitsu. Multiagent Strategic Interaction Based on a Game Theoretical Approach to Polarization Reversal in Ferroelectric Capacitors, Journal of Advanced Computational Intelligence and Intelligent Informatics, Vol. 15, No. 7, pp. 806-812, Sept. 2011.
• Gwang-Geun Lee, Yosihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu. Low-voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride-trifluoroethylene), Applied Physics Express, Vol. 4, pp. 091103-1-3, Aug. 2011.
• Tue T. Phan, Trinh Q. Bui Nguyen, Takaaki Miyasako, Thanh V. Pham, Eisuke Tokumitsu, Tatsuya Shimoda. Lanthanum Oxide Capping Layer for Solution-processed Ferroelectric-gate Thin-film Transistors, 2011 Spring meeting, Materials Research Society Symp., 2011 Spring meeting, Materials Research Society Symp. Proc., 1337, Aug. 2011.
• Gwang-Geun Lee, Eisuke Tokumitsu, Sung-Min Yoon, Yosihisa Fujisaki, Joo-Won Yoon, Hiroshi Ishiwara. The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene), Applied Physics Letters, Vol. 99, pp. 012901-1-3, July 2011.
• Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Ferroelectric-Gate Thin-Film Transitor Fabricated by Total Solution Deposition Process, Jpn. J. Appl. Phys., Vol. 50, pp. 04DD09-1-6, Apr. 2011.
• PHAN TRONG TUE, TAKAAKI MIYASAKO, BUI NGUYEN QUOC TRINH, JINWANG LI, EISUKE TOKUMITSU, Tatsuya Shimoda. Optimization of Pt and PZT Films for Ferroelectric-Gate Thin Film Transistors, Ferroelectrics, Dec. 2010.
• Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Tron Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Totally solution-processed feerroelectric-gate thin-film transistor, Applied Physics Letters, Vol. 97, No. 17, pp. 173509-1-3, Oct. 2010.
• Jinwan Li, Hiroyuki Kameda, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Tron Tue, Eisuke Tokumitsu, Tadaoki Mitani, Tatsuya Shimoda. A low-temperature crystallization path for device-quality ferroelectric films, Applied Physics Letters, Vol. 97, No. 102905, pp. 1-3, Sept. 2010.
• Toshihiko Kaneda, Joo-Nam Kim, Eisuke Tokumitsu, Tatsuya Shimoda. Improvement of Sol-Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment, Jpn. J. Appl. Phys., Vol. 49, pp. 09MA08-1-3, Sept. 2010.
• Eisuke Tokumitsu, Tomohiro Oiwa. Fabrication of IGZO and In2O3-Channel Ferroelectric-Gate Thin Film Transistors, Mater. Res. Soc. Symp. Proc., Vol. 1250, 1250-G13-07, pp. 145-150, Aug. 2010.
• Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang, Gwang-Geun Lee, Eisuke Tokumitsu, Hiroshi Ishiwara. Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn ocide-based ferroelectric memory transistor, Applied Physics Letters, No. 96, 232903 1-3, May 2010.
• Yuki Tani, Satoshi Kobayashi, Eisuke Tokumitsu. Electric field effects on radiative transition in quantum dot inorganic electroluminescent devices, IEICE Electronics Express, Vol. 7, No. 4, pp. 288-294, Feb. 2010.
• Mitsuru Nakata, Kazushige Takechi, Toshimasa Eguchi, Eisuke Tokumitsu, Hirotaka Yamaguchi, Setsuo Kaneko. Effects of thermal annealing on ZnO-TFT characteristics and the application of excimer laser annealing to plastic-based ZnO-TFTs, Jpn. J. Appl. Phys., Vol. 48, No. 8, pp. 081608 1-7, Aug. 2009.
• Mitsuru Nakata, Kazushige Takechi, Eisuke Tokumitsu, Hirotaka Yamaguchi, Setsuo Kaneko. Flexible high-performance amorphous InGaZnO4-TFTs utilizing excimer laser annealing, Jpn. J. Appl. Phys, Vol. 48, No. 8, pp. 081607 1-7, Aug. 2009.
• Mitsuru Nakata, Kazushige Takechi, Kazufumi Azuma, Eisuke Tokumitsu, Hirotaka Yamaguchi, Setsuo Kaneko. Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing, Applied Physics Express 2, 2009 The Japan Society of Applied Physics, pp. 021102-1~3, Feb. 2009.
• Shiro Hino, Tomohiro Hatayama, Jun Kato, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu. Anomalously High Channel Mobility in SiC MOSFET with Al2O3/SiOx/SiC Gate Structure, ICSCRM2007, Materials Science Forum, vol. 600-603, pp. 683-686, Feb. 2009.
• Eisuke TOKUMITSU, Youhei KONDO. Fabrication and Characterization of ITO/BZN Thin Film Transistors, Journal of the Korean Physical Society, Vol. 54, No. 1, pp. 539-543, Jan. 2009.
• Tomohiro Hatayama, Shiro Hino, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu. Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial SiO2 Layer Between Al2O3 and SiC, IEEE Transactions on Electron Devices, Vol. 55, No. 8, pp. 2041-2045, Aug. 2008.
• S.Hino, Tomohiro Hatayama, J.Kato, E.Tokumitsu, N.Miura, T.Oomori. High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator, Applied Physics Letters, Vol. 92, No. 183503, pp. 1-2, June 2008.
• Shiro Hino, Tomohiro Hatayama, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu. Fabrication and Charactarization of 4H-SiC MOSFET with MOCVD-grown Al2O3 Gate Insulator, Materials Science Forum, Vol. 556-557, pp. 787-790, Oct. 2007.
• E.Tokumitsu, Y.Takano, H.Shibata, H.Saiki. Fabrication and Characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layer, Journal of Microelectronic Engineering, Vol. 84, pp. 2018-2021, June 2007.
• Hirokazu Saiki, Eisuke Tokumitsu. Data Retention and Readout Degradation Propertics of Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si Structure Ferroelectric-Gate Field Effect Transistors, Jpn. J. Appl. Phys., Vol. 46, No. 1, pp. 261-266, Jan. 2007.
• Eisuke Tokumitsu, Masaru Senoo, Etsu Shin. Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation, Materials Research Society Symp., Materials Research Society Symp. Proc., Vol. 902E, pp. T10-54.1-54.6, July 2006.
• Hirokazu Saiki, Syahhibul Azwar, Eisuke Tokumitsu. Fabrication of SBT-based Ferroelectric Thin Films for Low Voltage Operation of Ferroelectric-gate FET, Transactions of the Materials Research Society of Japan, Vol. 31[1], pp. 197-200, Jan. 2006.
• E.Tokumitsu, M. Senoo, T. Miyasako. Use of ferroelectric gate insulator for thin film transistors with ITO channel, Journal of Microelectronic Engineering, vol. 80, pp. 305-308, June 2005.
• Takaaki Miyasako, Masaru Senoo, Eisuke Tokumitsu. Ferroelectric-gate thin–film transistors using indium-tin-oxide channel with large charge controllability, Applied Physics Letters, vol. 86, No. 16, pp. 162902-1～3, Apr. 2005.
• Takaaki Miyasako, Masaru Senoo, Eisuke Tokumitsu. Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with oarge charge controllability, Applied Physics Letters, vol. 86, No. 16, pp. 162902/1-3, Apr. 2005.
• Takaaki Miyasako, Masaru Senoo, Eisuke Tokumitsu. Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O3 Films Fabricated Using Low-Pressure Consolidation Process, IEICE Transactions on Electronics, Vol. E87-C, No. 10, pp. 1694-1699, Oct. 2004.
• Hirokazu Saiki, Eisuke Tokumitsu. Ferroelectric Sprit-Gate-Feild-Effect-Transistors for Nonvolatile Memory Cell Array, IEICE Transactions on Electronics, Vol. E87-C, No. 10, pp. 1700-1705, Oct. 2004.
• Shiro Hino, Makoto Nakayama, Kenji Takahashi, Hiroshi Funakubo, Eisuke Tokumitsu. Characterization of Hafnium Oxide Thin Films by Sorce Gas Pulse Introduced Metalorganic Chemical Vapor Deposition using Amino-Family Hf Precursors, Jpn. J. Appl. Phys., Vol. 42, Part 1, No. 9B, pp. 6015-6018, Sept. 2003.
• Naoki Sugita, Eisuke Tokumitsu, Minoru Osada, Masato Kakihana. In situ Raman Spectroscopy observation of Crystallization Process of Sol-Gel Derived Bi_4-xLa_xTi₃O₁₂ Films, Jpn. J. Appl. Phys., Vol. 42, Part 2, No. 8A, pp. L944-945, Aug. 2003.
• Kenji Takahashi, Makoto Nakayama, Shiro Hino, Eisuke Tokumitsu, Hiroshi Funakubo. Growth of Hafnium Oxide Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Free Hf[N(C2H5)2]4 Precursor and Their Properties, Integrated Ferroelectrics, vol. 57, pp. 1185-1192, Mar. 2003.
• Kenji Takahashi, Makoto Nakayama, Shintaro Yokoyama, Takeshi Kimura, Eisuke Tokumitsu. Preparation of hafnium oxide films from oxygen-free Hf[N(C2H5)2]4 precursor and their properties, Applied Surface Science, No. 216, pp. 296-301, Jan. 2003.
• Naoki SUGITA, Minoru OSADA, Eisuke TOKUMITSU. Characterization of Sol-gel Derived Bi4-xLaxTi3O12 Films, Jpn. J. Appl. Phys., Vol. 41, Part 1, No. 11B, pp. 6810-6813, Nov. 2002.
• E.Tokumitsu, Takeaki Isobe, Takeshi Kijima, Hiroshi Ishiwara. Fabrication and Characterization of Metal- Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using Ferroelectric (Bi,La)₄Ti₃O₁₂ Films, Jpn. J. Appl. Phys, Vol. 40, No. 9B, pp. 5576-5579, Sept. 2001.
• Eisuke Tokumitsu, Kojiro Okamoto, Hiroshi Ishiwara. Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-Field-Effect-Transistors(FETs) Using Pt/SrBi₂Ta₂O₉/Pt/SrTa₂O₆/SiON/Si Structures, Jpn. J. Appl. Phys., Vol. 40, No. 4B, pp. 2917-2922, Apr. 2001.
• S.Imada, E.Tokumitsu, H.Ishiwara. Ferroelectricity of YMnO₃ Thin Films on Pt(111)/ Al₂O₃(0001)and Pt(111)/Y₂O₃(111)/Si(111) structures grown by Molwcular Beam Epitaxy, Jpn. J. Appl. Phys., Vol. 40, No. 2A, pp. 666-671, Feb. 2001.
• Bum-Ki Moon, Hiroshi Ishiwara, E.Tokumitsu, M.Yoshimoto. Characteristics of ferroelectric Pb(Zr,Ti)O₃ films epitaxialy grown on CeO₂(111)/Si(111) substrates, Thin Solid Films, Vol. 385, pp. 307-310, Jan. 2001.
• E. Tokumitsu, D. Takahashi, H. Ishiwara. Characterization of Metal-Ferroelectric- (Metal-)Insulator-Semiconductor(MF(M)IS)Structures Using (Pb,La)(Zr,Ti)O₃and Y₂O₃ Films, Jpn. J. Appl. Phys., Vol. 39, No. 9B, pp. 5456-5459, Sept. 2000.
• Sung-ming Yoon, Eisuke Tokumitsu, Hiroshi Ishiwara. Ferroelectric Neuron Integrated Circuits using SrBi₂Ta₂O₉-Gate FET's and CMOS Schmitt-Trigger Oscillators, IEEE Transactions on Electron Devices, Vol. 47, No. 8, pp. 1630-1635, Aug. 2000.
• Eisuke TOKUMITSU, Gen FUJII, Hiroshi ISHIWARA. Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi₂Ta₂O₉ Film and SrTa₂O₆/SiON Buffer Layer, Jpn. J. Appl. Phys., Vol. 39, No. 4B, pp. 2125-2130, Apr. 2000.
• Sung-ming YOON, Eisuke TOKUMITSU, Hiroshi ISHIWARA. Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/ SrBi₂Ta₂O₉/Pt/Ti/SiO₂/Si Structure-Field Effect Transistor as a Synapse Device, Jpn. J. Appl. Phys., Vol. 39, No. 4B, pp. 2119-2124, Apr. 2000.
• Eisuke Tokumitsu, Koji Aizawa, Kojiro Okamoto, Hiroshi Ishiwara. Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films, Appl. Phys. Lett., Vol. 76, No. 18, pp. 2609-2611, Mar. 2000.
• Sung-ming Yoon, Eisuke Tokumitsu, Hiroshi Ishiwara. Adaptive-Learning Neuron Integrated Circuits Using Metal-Ferroelectric (SrBi₂Ta₂O₉)-Semiconductor (MFS) FETs, IEEE Electron Device Letters, Vol. 20, No. 10, pp. 526-528, Oct. 1999.
• E.Tokumitsu, Gen Fujii, Hiroshi Ishiwara. Nonvolatile ferroelectric-gate FETs using SrBi₂Ta₂O₉/Pt/SrTa₂O₆/SiON/Si structures, Appl. Phys. Lett., Vol. 75, No. 4, pp. 575-577, July 1999.
• Sung-ming Yoon, Eisuke Tokumitsu, Hiroshi Ishiwara. An electrically modifiable synapse arrary composed of metal-ferroelectric-semiconductor (MFS) FETs using SrBi₂Ta₂O₉ thin films, IEEE Electron Device Lett., Vol. 20, No. 5, pp. 229-231, May 1999.
• SHOUGO IMADA, Shigeto Shouriki, Eisuke Tokumitsu, Hiroshi Ishiwara. MBE GROWTH OF FERROELECTRIC YMnO3 THIN FILMS ON Si(111) USING Y2O3 BUFFER LAYERS, Mat. Res. Soc. Symp. Proc., Vol. 541, pp. 585-590, 1999.
• E.TOKUMITSU, Y. TAKAHASHI, H.ISHIWARA. PREPARATION AND CHARACTERIZATION OF Bi2VO5.5 FILMS BY MOD METHOD, Mater. Res. Soc. Sympo. Proc., Vol. 541, pp. 555-560, 1999.
• EISUKE TOKUMITSU. Electrical Properties of La0.7Sr0.3CoO3/Pb(Zr0.52Ti0.48)O3/La0.7Sr0.3CoO3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method, Jpn. J. Appl. Phys., Vol. 37 Part 2, No. 8A, pp. L936-L938, Aug. 1998.
• Tatsuya KAMEI, Eisuke TOKUMITSU, Hiroshi ISHIWARA. Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization, IEICE Trans. Electron, Vol. E81-C, No. 4, pp. 577-583, Apr. 1998.
• Byung-Eun PARK, Shogo IMADA, Eisuke TOKUMITSU, Hiroshi ISHIWARA. Annealing Effect of the CeO2 Buffer Layers for PZT/CeO2 /Si(111) Structures, Journal of the Korean Physical Society, Vol. 32, pp. S1390-S1392, Feb. 1998.
• Koji AIZAWA, Eisuke TOKUMITSU, Shigenori OHTAKE, Hiroshi ISHIWARA. C-V Characteristics of Al/BaMgF4/Si(111) Diodes Fabricated by Dry Etching Process, Journal of the Korean Physical Society, Vol. 32, pp. S1192-S1194, Feb. 1998.
• Eisuke Tokumitsu, Ryo-ichi Nakamura, Hiroshi Ishiwara. Nonvolatile Memory Operations of Metal-Ferroelectric-Insulator-Semiconductor(MFIS) Fet's Using PLZT/STO/Si(100) Structures, IEEE Electron Device Letters, Vol. 18, No. 4, pp. 160-162, Apr. 1997.
• EISUKE TOKUMITSU, TOSHISHIGE SHIMAMURA. Electrical Properties of Ferroelectric-Capacitor-Gate Si Mos Transistors Using P(L)ZT Films, Integrated Ferroelectrics, Vol. 15, pp. 137-144, Jan. 1997.
• Eisuke TOKUMITSU, Ryo-ichi NAKAMURA, Kensuke ITANI, Hiroshi ISHIWARA. Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZrxTi1-xO3(PZT) Films, Japanese Journal of Applied Physics, Vol. 34, No. 2B, pp. 1061-1065, Feb. 1995.
• SHUN-ICHIRO OHMI, EISUKE TOKUMITSU, HIROSHI ISHIWARA. Characterization of ferroelectric BaMgF4 films grown on AlGaAs/GaAs (100) high-electron-mobility transistor structures, Journal of Crystal Growth, Vol. 150, pp. 1104-1107, 1995.
• E. Tokumitsu, M. Shirahama, K. Nagao, S. Nozaki, M. Konagai, K. Takahashi. Carbon doping in molecular beam epitaxial (MBE) growth of GaAs using neopentane as a novel carbon source, Journal of Crystal Growth, Vol. 127, pp. 711-715, 1993.
• Eisuke Tokumitsu, Jun-ichi Shirakashi, M. Qi, Takumi Yamada, Shinji Nozaki, Makoto Konagai, Kiyoshi Takahashi. Heavily carbon doped p-type In GaAs by MOMBE, Journal of Crystal Growth, Vol. 120, pp. 301-305, Jan. 1992.

著書

• 徳光永輔. 電子物性・材料の事典, 朝倉書店, Sept. 2006.

国際会議発表 (査読有り)

• Phan Trong Tue, Toshihiko Kaneda, Daisuke Hirose, Takaaki Miyasako, Yoshitaka Murakami, Shinji Kohara, Jinwang Li, Tadaoki Mitani, EisukeTokumitsu, Tatsuya Shimoda. Fabrication of Oxide Thin-Film Transistors Using the Newly Developed Rheology Printing Method, 2014 Spring meeting & Exhibit, Materials Research Society, Apr. 2014.
• Daisuke Hirose, Toshihiko Kaneda, Takaaki Miyasako, Phan T. Tue, Yoshitaka Murakami, Shinji Kohara, Jinwang Li, Tadaoki Mitani, Eisuke Tokumitsu, Shogo Nobukawa, Tatsuya Shimoda. Rheological Properties of the ITO Gel and Its Application for Forming Nano-Patterns by Imprinting, 2014 Spring meeting & Exhibit, Materials Research Society, Apr. 2014.
• Ken-Ichi Haga, Yuki Nakada, Dan Ricinschi, Eisuke Tokumitsu. Characterization of In2O3 Channel Ferroelectric-Gate Thin Film Transistors, International Thin-FilmTransistor Conference(ITC 2014), Jan. 2014.
• EISUKE TOKUMITSU. Ferroelectric-gate oxide channel thin film transistors fabricated by solution process, International Electron Devices and Materials Symposium, Nov. 2013.
• Eisuke Tokumitsu, Kei Sato, Ken-Ichi Haga. Fundamental Study on Thermal Nanoimprint Process for Oxide-channel Thin Film Transistor Fabrication, Nanoinprint and Nanoprint Technology(the 12th International Conference on NNT 2013), Oct. 2013.
• Hiroyuki Yamada, Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Satoshi Yamakawa, EISUKE TOKUMITSU. Fabrication of 4H-SiC MOSFETs Using Stacked Al2O3 Gate Insulator with Pre-Annealed Al2O3 Buffer Layer, The International Conference on Silicon Carbide and Related Materials 2013, Oct. 2013.
• Yuichi Nagahisa, Eisuke Tokumitsu. Electrical characterization of gate modulation in graphene/n-SiC contacts, 5th International conference on Recent Progress in Graphene Research, Sept. 2013.
• EISUKE TOKUMITSU. Use of low-temperature-deposited high-k gate insulators for SiC power MOSFETs, Collaborative Conference on 3D & Materials Research (CC3DMR) 2013, June 2013.
• Koji Nagahara, Bui Nguyen Quoc Trinh, Eisuke Tokumitsu, Satoshi Inoue, Tatsuya Shimoda. 120 nm Channel Length Ferroelectric-Gate Thin Film Transistor by Nanoimprint Lithography, The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013), June 2013.
• Kenichi Umeda, Takaaki Miyasako, Ayumu Sugiyama, Atsushi Tanaka, Masayuki Suzuki, Eisuke Tokumitsu, Tatsuya Shimoda. All Solution-Processed Amorphous Oxide Thin Film Transistors via UV/O3 Treatment, The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013), June 2013.
• Y.Nagahisa, Y.Harada, E. Tokumitsu. Observation of High on/off Drain Current Ratio in Graphene Transistors with n-type doped SiC Source/Drain Regions, Graphene Week 2013, GW2013-142, June 2013.
• Eisuke Tokumitsu, Etsu Shin, Hiroshi Shibata. Asymmetry of switching time in oxide-channel ferroelectric-gate thin film transistors, E-MRS 2013 SPRING MEETING, May 2013.
• EISUKE TOKUMITSU. Oxide-channel thin film transistors using ferroelectric and high-k gate insulators, International Union of Materials Research Societies—International Conference on Electronic Materials 2012(IUMRS-ICEM2012), Sept. 2012.
• Eisuke Tokumitsu, Isahaya Yamamura, Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Hiroaki Sumitani, Tatsuo Oomori. Comparative Study of Metalorganic Chemical Vapour Deposition of HfO2 and Al2O3 Gate Insulators on SiC for Power MOSFET Applications, WoDiM 2012(17th Workshop on Dielectrics in Microelectronics), June 2012.
• Eisuke Tokumitsu, Gwang-Geun Lee. Switching properties of ferroelectric P(VDF-TrFE) films fabricated on oxide electrodes, E-MRS 2012, Spring Meeting, May 2012.
• Ken-ichi Haga, Eisuke Tokumitsu. Fabrication and Characterization of An-Sn-O series oxide thin film transistors, ITC 2012(8th International Thin-Film Transistor Conference), Jan. 2012.
• Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda. High performance Bi-Nb-Ox thin-film capacitors fabricated by chemical solution deposition process, 2011 Fall meeting, Materials Research Society, Nov. 2011.
• Takaaki Miyasako, Masatoshi Onoue, Hirokazu Tsukada, Eisuke Tokumitsu, Tatsuya Shimoda. Solution-processed oxide thin-film transistors using La-Ta-O/Bi-Nb-O stacked gate insulator, 2011 Fall meeting, Materials Research Society, Nov. 2011.
• Jinwang Li, Eisuke Tokumitsu, Mikio Koyano, Tatsuya Shimoda. P-type Amorphous Oxide Semiconductors Ln-Ru-O from Solution Processing, 2011 Fall meeting, Materials Research Society, Nov. 2011.
• Bui Nguyen Quoc Trinh, Toshihiko Kaneda, Takaaki Miyasako, Pham Van Thanh, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Nano-sized PT Lines and Spaces Patterned by Nanoimprint Lithography and physical Dry-etching Method, The 10th international conference on Nanoimprint and Nanoprint Technology (NNT 2011), Oct. 2011.
• Joo-Nam Kim, Toshihiko Kaneda, Eisuke Tokumitsu, Tatsuya Shimoda. Leakage Cuurent property of the PZT films improved by thermal press treatment, The 10th international conference on Nanoimprint and Nanoprint Technology (NNT 2011), Oct. 2011.
• Joo-Nam Kim, Toshihiko Kaneda, Eisuke Tokumitsu, Tatsuya Shimoda. Leakage Cuurent property of the PZT films improved by thermal press treatment, The 10th international conference on Nanoimprint and Nanoprint Technology (NNT 2011), Oct. 2011.
• Eisuke Tokumitsu, Yasuhiro Takahashi, Toshihiko Kaneda, Tatsuya Shimoda. Source solution dependence on electrical properties of In-Zn-O channel thin film transistors, E-MRS 2011 Fall Meeting, Sept. 2011.
• Eisuke Tokumitsu, Akio Ishiguro, Hiroyuki Yamada, Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Hiroaki Sumitani, Tatsuo Oomori. Al2O3/4H-SiC MOSFETs Fabricated with High-Temperature Nitridation Process, 2011 International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), pp. 320, Sept. 2011.
• Bui Nguyen Quoc Trinh, Takaaki Miyasako, Toshihiko Kaneda, Pham Van Thanh, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Data Disturbance-free NAND-type Ferroelectric-gate Thin Film Transistor Array using Sol-gel ITO and Stacked (BLT/PZT) Gate Insulator, 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Yuichi Nagahisa, Eisuke Tokumitsu. Suppression of Hole Current in Graphene Transistors with n-Type Doped SiC Source/Drain Regions, 2011 International Conference on Silicon Carbide and Related Materials （ICSCRM 2011）, pp. 112, Sept. 2011.
• Bui Nguyen Quoc Trinh, Takaaki Miyasako, Toshihiko Kaneda, Phan Trong Tue, Pham Van Thanh, Eisuke Tokumitsu, Tatsuya Shimoda. SUB-MICRON FERROELECTRIC-GATE THIN FILM TRANSISTOR USING SOL-GEL ITO CHANNEL AND STACKED (BLT/PZT) INSULATOR, International Symposium on Intergrated Functionalities(ISIF 2011), July 2011.
• Eisuke Tokumitsu, Kazuya Kikuchi. Switching Characteristics of In2O3/(Bi,La)4Ti3O12 Ferroelectric-Gate Thin Film Transistors”, EMF 2011(12th European Meeting on Ferroelectricity), July 2011.
• Tue T. Phan, Trinh Q. Bui Nguyen, Takaaki Miyasako, Thanh V. Pham, Eisuke Tokumitsu. Lanthanum Oxide Capping Layer for Solution-processed Ferroelectric-gate Thin-film Transistors, 2011 Spring meeting, Materials Research Society, Apr. 2011.
• Thanh V. Pham, Quoc Trinh N. Bui, Tue T. Phan, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda. Analysis on Interface Layer Between Pt Electrode and Ferroelectric Layer of Solution-processed PZT Capacitor, 2011 Spring meeting, Materials Research Society, Apr. 2011.
• Eisuke Tokumitsu, Yasuhiro Takahashi. In2O3 & IZO Channel Thin-Film Transistors Prepared by Chemical Solution Process, 7th International Thin-Film Transistor Conference (ITC2011), Mar. 2011.
• Phan Tue, Bui Trinh, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda. Fabrication and Characterization of a Ferroelectric-Gate FET with a ITO/PZT/SRO/Pt Stacked Structure”, ,, 22nd International Conference on Microelectronics (ICM 2010), Dec. 2010.
• G.-G. Lee, S.-M. Yoon, J.-W. Yoon, Y. Fujisaki, H. Ishiwara, E. Tokumitsu. Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE), The 17th International Display Workshops(IDW’10), Dec. 2010.
• GwangGeun Lee, Sung-ming Yoon, Yosihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu. Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate for Flexible IGZO-channel Ferroelectric-gate TFTs, 2010 fall meeting, Materials Research Society, Nov. 2010.
• Y. Nagahisa, E. Tokumitsu. FABRICATION OF GRAPHEN CHANNEL TRANSISTOR WITH HEAVILY DOPED SiC SOURCE/DRAIN REGIONS, 2011 International Symposium on Graphene Devices (ISGD), Oct. 2010.
• Eisuke Tokumitsu. Recent progress on ferroelectric-gate thin film trensistors with oxide channel, International Conference on Electronic Materials 2010 presented by International Union of Materials Research Societies (IUMRS-ICEM 2010), Aug. 2010.
• Eisuke Tokumitsu, Youhei Kondo, Tomohiro Oiwa. Preparation of Bi-Zn-Nb-O(BZN)High-K Gate insulator by Sputtering for Oxide Channel Thin Film Transistors, 16th Workshop on Dielectrics in Microelectronics(WoDiM 2010), June 2010.
• Eisuke Tokumitsu, Ken-ichi Haga, Tomohiro Oiwa. Fabrication of IGZO and In2O3-Channel Ferroelectric-Gate Thin Film Transistors, 2010 MRS Spring meeting, Materials Research Society, Apr. 2010.
• Mitsuru Nakata, Kazushige Takechi, Shinya Yamaguchi, Eisuke Tokumitsu, Hiroshi Tanabe, Setsuo Kaneko. Low-Temperature Fabrication of Amorphous InGaZnO4 Thin-Film Transistors Utilizing Excimer, LaserInternational Workshop on Transparent Amorphous Oxide Semiconductors(TAOS 2010), Jan. 2010.
• GwangGeun Lee, Sung-ming Yoon, JooWon Yoon, Yosihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu. Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film, 2009 fall meeting, Materials Research Society, Nov. 2009.
• E. Tokumitsu, T. Oiwa. Fabrication of In-Ga-Zn-O channel thin film transistors with high-k and ferroelectric gate insulators, 23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 23), Aug. 2009.
• Phan Trong Tue, Takaaki Miyasako, Bui Nzuyen Quoc Trinh, Jinwang Li, Eisuke Tokumitsu, Tatsuya Shimoda. OPTIMIZATION OF Pt AND PZT FILMS FOR FERROELECTRIC-GATE THIN FILM TRANSISTORS, 12th Inter. Meeting on Ferroelectricity & 18th IEEE Intern.Symposium on the Applications of Ferroelectrics (IMF-IASF-2009), Aug. 2009.
• EISUKE TOKUMITSU. Recent Progress and Future Prospects of Oxide-channel Ferroelectric-gate Thin Film Transistor with Large Charge Controllability, 2009 Spring meeting, Materials Research Society, H8.5, Apr. 2009.
• Eisuke Tokumitsu, Tomohiro Oiwa. Transmission Electron Microscope Observation of ITO/(Bi,La)4Ti3O12 TFT Structures, International Thin Film Transistor Conference, The Proceedings of the 5th International thin Transistor Conference, pp. 177-179, Mar. 2009.
• Tomohiro Oiwa, Youhei Kondo, Mitsuru Nakata, Eisuke Tokumitsu. Fabrication of IGZO Channel Thin Film Transistor with BZN Gate Insulator, 2008 Fall Meeting, Materials Research Society, Paper. B10.3, Dec. 2008.
• H.Moriya, S.Hino, N.Miura, T.Oomori, E.Tokumitsu. Effect of Oxidant in MOCVD-growth of Al2O3 Gate Insurator on 4H-SiC MOSFET Properties, 7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008), Sept. 2008.
• Eisuke Tokumitsu. Consideration on Required Ferroelectric Properties for Nonvolatile Ferroelectric-Gate Transistors, International Symposium on Integrated Ferroelectrics 2008(ISIF2008), June 2008.
• Eisuke Tokumitsu, Tomohiro Oiwa, Yohei Kondo, Masaru Senoo. All-Oxide Transparent Thin Film Transistors with and without Nonvolatile Memory Function, 15th Workshop on Dielectrics in Microelectronics(WoDiM 2008), June 2008.
• Eisuke Tokumitsu, Youhei Kondou. Transparent oxide-channel thin film transistor with Bi-Zn-Nb-O gate insulator, E-MRS 2008, Spring Meeting,, May 2008.
• Eisuke TOKUMITSU, Youhei Kondou. Fabrication and Characterization of ITO/BZN Thin Film Transistors, The Proceedings of the 4th International TFT Conference(ITC 2008), pp. 295-298, Jan. 2008.
• S.Hino, Tomohiro Hatayama, J.Kato, N. Miura, T.Oomori, E.Tokumitsu. Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure, International Conference on Silicon Barbide and Related Materials 2007, No. We-2A-2, Oct. 2007.
• E.Tokumitsu, H.Shibata, M.Senoo. Nonvolatile memory operetaion of ferroelectric-gate thin film transistors using oxide channel, the 14th International Workshop on Oxide Electronics(WOE14), No. PⅡ-06-124, Oct. 2007.
• EISUKE TOKUMITSU. Fabrication and Characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layer, Insulating Films on Semiconductors(INFOS2007) 15th biannual conference, No. paper 7.3, June 2007.
• Eisuke Tokumitsu, Hirokazu Saiki. Characterization of Read-Out Drain Current Degradation in Ferroelectric-Gate Transistors, 19th International Symposium of Intergrated Ferroelectrics(ISIF2007), pp. 1-143P, May 2007.
• E.Tokumitsu, N.Sugita, S. Boku, T.Aoki, T.Tani. Sol-Gel Derived(Bi,La)4Ti3O12 Thin Films with Surface Treatment before Crystallization Annealing, 16th IEEE International Symposium on the Applications of Ferroelectrics(ISAF2007), May 2007.
• Eisuke Tokumitsu, Syahhibul Azwar, Hirokazu Saiki. Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structures with Sol-Gel Derived (Sm,Sr)Bi2Ta2O9 Films, 19th International Symposium of Intergrated Ferroelectrics(ISIF2007), pp. 5-166P, May 2007.
• E.Tokumitsu, Ｔ.Fujimura, E.Shin. Improved Electrical Properties of ITO-Channel Thin Film Transistor with Ferroelectric Gate Insulator, 13th International Workshop on Oxide Electronics (WOE13), Oct. 2006.
• Eisuke Tokumitsu. ITO-Channel Ferroelectric-Gate Thin Film Transistor with Large On-Current, 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2006),C3.9, Oct. 2006.
• Eisuke Tokumitsu, Etsu Shin, Masaru Seno. ITO-channel thin film transistor with (Ba, Sr)TiO3 gate insulator, European Materials Research Society(E-MRS) IUMRS ICEM 2006 Spring Meeting, pp. Paper R IX 04, May 2006.
• Tomohiro Hatayama, Shiro Hino, Shio Hagiwara, Eisuke Tokumitsu. Preparation of Al2O3 Thin Films on SiC by Metal Organic Chemical Vapor Deposition, 2006 Spring meeting, Materials Research Society, pp. Paper B5.10, Apr. 2006.
• Eisuke Tokumitsu, Takaaki Miyasako, Masaru Senoo. Non-volatile Thin Film Transistors Using Ferroelectric/ITO Structures, 2005 Mater. Res. Soc. Symp. Proc., Vol. 830, pp. 107-112, July 2005.
• Eisuke Tokumitsu, Masaru Senoo, Takaaki Miyasako. Use of ferroelectric gate insulator for thin film transistors with ITO channel, Journal of Microelectronic Engineering, vol. 80, pp. 305-308, June 2005.
• Hirokazu Saiki, Eisuke Tokumitsu. Characterization of Metal-Ferroelectric-Metal Insulator-Semiconductor(MFMIS) FETs Using (Sr,Sm)0.8Bi2.2O9(SSBT) Thin Films, Materials Research Society Symp., Materials Research Society Symp. Proc., Vol. 784, pp. 485-490, July 2004.
• Eisuke Tokumitsu, Masahito Kishi. Sm Doping Effects on Electrical Properties of Sol-Gel Derived SrBi2Ta2O9 Films, Materials Research Society Symp. Proc., Vol. 748, pp. 275-280, July 2003.
• Naoki Sugita, Eisuke Tokumitsu. IrO2/Ir Multilayer-Structure Electrode for MFMIS Ferroelectric Gate Transistors, Intergrated Ferroelectrics, Vol. 52, pp. 103-109, Jan. 2003.
• E.Tokumitsu, N.Kawaguchi, S.M.Yoon. Flexible Logic-Gate Using Ferroelectric Films, 2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Cheju, Korea, pp. 223-228, July 2001.
• Eisuke Tokumitsu, Kensuke Itani, Bum-Ki Moon, Hiroshi Ishiwara. Preparation of PbZrxTi1-xO3 Films on Si Substrates using SrTiO3 Buffer Layers, Materials Research Society Symposium Proceedings, Vol. 361, pp. 427-432, Nov. 1994.
• EISUKE TOKUMITSU, MAKOTO KONAGAI. Free carrier saturation in III-V compound semiconductors, Materials Science Forum, Vol. 117-118, pp. 435-440, 1993.
• Eisuke Tokumitsu, Kiyoshi Takahashi. Photo-Metalorganic Molecular Beam Epitaxy - a New Epitaxial Growth Technique -, 35th National Symp. American Vacuum Society, Oct. 1988.

国内会議発表 (査読有り)

• 永久雄一, 徳光永輔. SiC上グラフェンチャネルトランジスタの単極性動作と高オン／オフ比実現に向けた試み（Ⅱ）, SiC及び関連半導体研究会 第２２回講演会, pp. 170, Dec. 2013.
• Pham Van Thanh, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Electric properties and interface charge state of ferroelectric gate transistor using BLT/PZT hybrid as gate insulator, 第29回強誘電体応用会議(FMA28), May 2012.
• 永久雄一, 徳光永輔. ＳｉＣ上グラフェンチャネルトランジスタの単極性動作と高オン／オフ比実現に向けた試み, SiC及び関連ワイドギャップ半導体研究会第２０回講演会, Dec. 2011.
• 清水貴也, 羽賀健一, 徳光永輔, 金田敏彦, 下田達也. 様々な液体原料を用いたIn-Zn-O薄膜の形成と薄膜トランジスタ応用, 薄膜材料デバイス研究会、第８回研究集会, Nov. 2011.
• Lee Gwang Geun, Yosihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu. Low voltage operation of ferroelectric thin film transistors using P(VDF-TrFE) and IGZO, 第７２回応用物理学会学術講演会, Aug. 2011.
• 木田憲之助, 日野史郎, 三浦 成久, 今泉昌之, 岸谷博昭, 徳光永輔. H(CH3)2Alを用いたMOCVD法SiC基板上へのAl2O3膜の形成とAl2O3/SiC MOSFETの電気的特性評価, 第７２回応用物理学会学術講演会, Aug. 2011.
• 山田泰之, 石黒暁夫, 日野史郎, 三浦 成久, 今泉昌之, 岸谷博昭, 徳光永輔. Al2O3堆積膜をゲート絶縁膜に用いたSiC-MOSFETの作製と評価, 応用物理学会シリコンテクノロジー分科会第１37回研究集会、電子情報通信学会シリコン材料デバイス研究会, 信学技報, pp. 11-15, July 2011.
• 石黒暁夫, 山田泰之, 日野史郎, 三浦 成久, 大森 達夫, 徳光永輔. 高温窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価, 第58回応用物理学関係連合講演会, Mar. 2011.
• 永久雄一, 徳光永輔. n型ドープしたSiCをソース/ドレインに用いたグラフェンチャネルトランジスタの作製とその評価, 第58回応用物理学関係連合講演会, Mar. 2011.
• 高橋泰裕, 徳光永輔. 液体プロセスによるIn2O3及びIn-Zn-O(IZO)チャネル薄膜トランジスタの形成, 第58回応用物理学関係連合講演会, Mar. 2011.
• 菊池和哉, 徳光永輔. In2O3をチャネルに用いた強誘電体ゲートTFTの電気的特性, 第58回応用物理学関係連合講演会, Mar. 2011.
• 山村勇速, 徳光永輔, 日野史郎, 三浦 成久, 大森 達夫. MOCVD法によるSiC上へのHfO2膜の堆積とHfO2/SiO2/4H-SiC MOSFETの作製, 第58回応用物理学関係連合講演会, Mar. 2011.
• 高橋泰裕, 徳光永輔. 液体プロセスによるIn2O3及びIn-Zn-O(IZO)薄膜の形成と酸化物チャネル薄膜トランジスタへの応用, 薄膜材料デバイス研究会、第７回研究集会, 5P33, Nov. 2010.
• 羽賀健一, 徳光永輔. スパッタ法によるAl-Zn-Sn-O チャネルＴＦＴの作製, 薄膜材料デバイス研究会、第７回研究集会, 6P34, Nov. 2010.
• 石黒暁夫, 山田泰之, 日野史郎, 三浦 成久, 大森 達夫, 徳光永輔. 高温窒化処理とAl2O3堆積膜を用いた４H-SiC MOSFETの作製と評価, SiC及び関連ワイドギャップ半導体研究会 第１９回講演会, Oct. 2010.
• 羽賀健一, 徳光永輔. スパッタ法によるAl-Zn-Sn-OチャネルTFTの作製, 第７１回応用物理学会学術講演会, Sept. 2010.
• Gwang-Geun Lee, Sung-Min Yoon, Joo-Won Yoon, Yosihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu. Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer, 第７１回応用物理学会学術講演会, Sept. 2010.
• Gwang-Geun Lee, Sung-Min Yoon, Joo-Won Yoon, 藤崎芳久, 石原宏, 徳光永輔. 有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価, 信学技報、SDM2010-16、OME2010-16(2010-04), 社団法人電子情報通信学会, Vol. 110, No. 15, pp. 71-75, Apr. 2010.
• 徳光永輔. ナノ構造技術, 第57回応用物理学関係連合会講演会特別企画シンポジウム, Mar. 2010.
• 奥村優作, 徳光永輔. ゾルゲル法による酸化物チャネル薄膜トランジスタの作製, 第57回応用物理学関係連合会講演会, 18p-TR-1, Mar. 2010.
• 竹崎慶太郎, 日野史郎, 三浦 成久, 大森 達夫, 徳光永輔. 窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価, SiC及び関連ワイドギャップ半導体研究会第１８回講演会, Dec. 2009.
• 竹崎慶太郎, 日野史郎, 三浦成久, 大森達夫, 徳光永輔. 窒化処理とAL2O3堆積膜を用いた4H-SiC MOSFETの作製と評価, 第70回 応用物理学会学術講演会, 第70回 応用物理学会学術講演会, 10p-M-21, Sept. 2009.
• 柴田宏, 大岩朝洋, 徳光永輔. 酸化物チャネル強誘電体ゲート不揮発性メモリ素子の作製と評価, 信学技報、SDM2007-274(2008-03), 電子情報通信学会, Vol. 107, No. 549, pp. 7-12, Mar. 2008.
• 柴田宏, 大岩朝洋, 徳光永輔. 酸化物チャネル強誘電体ゲートトランジスタにおけるメモリ特性, 電子情報通信学会2008年総合大会, Mar. 2008.
• 加藤潤, 日野史郎, 三浦 成久, 大森 達夫, 徳光永輔. 低温堆積Al2O3を用いたSiC MOSFETのアニールによる電気的特性の変化, 第６８回 応用物理学関係連合講演会, 第６８回 応用物理学関係連合講演会, No. 6p-ZN-10/I, Sept. 2007.
• 日野史郎, 畑山 智裕, 加藤潤, 守谷仁, 三浦 成久, 大森 達夫, 徳光永輔. 極薄膜酸化膜を用いたAl2O3/SiC MOSFETのチャネル移動度の向上（Ⅱ）, 第６８回 応用物理学会学術講演会, 第６８回 応用物理学会学術講演会, No. 6p-ZN-9/Ⅰ, Sept. 2007.
• 近藤 洋平, 徳光 永輔. Bi1.5An1.0Nb1.5O7をｹﾞｰﾄ絶縁膜に用いたＩＴＯﾁｬﾈﾙ薄膜トランジスタの作製, 第６８回 応用物理学会学術講演会, 第６８回 応用物理学会学術講演会, No. 5p-ZT-7/II, Sept. 2007.
• 徳光永輔. 低温堆積Ａｌ２Ｏ３ｹﾞｰﾄ絶縁膜を用いたＳｉＣ－ＭＯＳＦＥＴ, ＳｉＣ及び関連ワイドギャップ半導体研究会個別討論会「ＳｉＣ ＭＯＳ界面とデバイス」, SiC及び関連ワイドギャップ半導体研究会, 応用物理学会, pp. 37-51, July 2007.
• 徳光永輔, 藤村朋史. ＩＴＯチャネル強誘電体ゲートＦＥＴの特性改善, 電子材料研究会, 電気学会, No. EFM-07-12, pp. 17-22, July 2007.
• 畑山 智裕, 日野史郎, 加藤潤, 徳光永輔, 三浦 成久, 大森 達夫. 極薄酸化膜を用いたAl2O3/SiC-MOSFETのチャネル移動度の向上, 第54回応用物理学関係連合講演会, No. 29a-N-3, Mar. 2007.
• 日野史郎, 畑山 智裕, 加藤潤, 徳光永輔, 三浦 成久, 大森 達夫. Al2O3/SiC-MOSFETトランジスタ特性のAl2O3堆積温度依存性, 第54回応用物理学関係連合講演会, No. 29a-N-4, Mar. 2007.
• 高野 友一, 斎木博和, 柴田宏, 徳光永輔. 金属／絶縁体／強誘電体／絶縁体／半導体構造（M-I-FIS構造）キャパシタの作製と評価, 第54回応用物理学関係連合講演会, No. 29a-SV-4, Mar. 2007.
• 徳光永輔. 強誘電体ゲート構造を用いたITOチャネル薄膜トランジスタ, 誘電体研究委員会, 第89回定例会, July 2006.
• Sung-ming YOON, Eisuke TOKUMITSU, Hiroshi ISHIWARA. Realization of adaptive learning function in a neuron circuit using metal/ferroelectric (SrBi₂Ta₂O₉)/semiconductor field effect transisitor (MFSFET), Jpn. J. Appl. Phys., Vol. 38-1, No. 4B, pp. 2289-2293, Jan. 1999.
• Eisuke TOKUMITSU, Kensuke ITANI, Bum-Ki MOON, Hiroshi ISHIWARA. Crystalline Quality and Electrical Properties of PbZrxTi1-xO3 Thin Films Prepared on SrTiO3-Covered Si Substrates, Japanese Journal of Applied Physics, Vol. 34, No. 9B, pp. 5202-5206, Sept. 1995.
• EISUKE TOKUMITSU. Correlation between Fermi level stabilization positions and maximumfree carrier coucentrations in (]G0003[)-(]G0005[) compound semiconductors, Japanese Journal Applied Physics, Vol. 29, No. 5, pp. L698-L701, May 1990.

国際会議発表 (査読なし・不明)

• Takaaki Miyasako, Bui Nguyen Quoc Trinh, Toshihiko Kaneda, Masatoshi Onoue, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda. Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process, 2010 International Conference on Solid State Devices and Materials, Vol. E-3-4L, pp. 1092-1093, Sept. 2010.
• Eisuke Tokumitsu, Tomofumi Fujimura, Ｔakashi Sato. ITO-Channel Ferroelectric-Gate Thin Film Transistor with Large Onn/off Current Radio, 2007 MRS Spring Meeting, No. Paper 16.1, Apr. 2007.
• E.Tokumitsu, Tomoharu Aoki, Takeo Tani. Crystallographic Orientation Control of Sol-gel-derived (Bi,La)4Ti3O12 (BLT) Films using Surface Seed Layer, 11th International Ceramics Congress, 4th Forum on New Materials, pp. Paper F-1.2: P05, June 2006.
• Eisuke Tokumitsu, Takeo Tani. Sol-Gel Derived (BiNd)4Ti3O12/(Bi,La)4Ti3O12/(Bi,Nd)4Ti3O12(BNT/BLT/BNT) Stacked Capacitors, ISIF 2006(18th International Symposium on Integrated Ferroelectrics), Apr. 2006.
• E.Tokumitsu. ITO Channel Thin-Film Transistor with Ferroelectric Gate Insulator, ITC’06 International Thin-Film Transistor Conference, Proceedings of 2nd International TFT Conference, No. 6.2, pp. 170-175, Jan. 2006.
• Tomoharu Aoki, Takeo Tani, Eisuke Tokumitsu. Electrical Properties of Bi4-xPrxTi3O12(BPT) Thin Films Prepared by Sol-Gel Method, Transactions of Materials Research Society of Japan, Vol. 30, No. 1, pp. 249-251, Dec. 2005.
• Eisuke Tokumitsu, Takaaki Miyasako, Masaru Senoo. Impact of low pressure consolidation annealing on electrical properties of sol-gel derived Pb(Zr,Ti)O3 films, Journal of the European Ceramic Society, Vol. 25, pp. 2277-2280, Jan. 2005.

国内会議発表 (査読なし・不明)

• 徳光永輔, 下田達也. 溶液プロセスによる酸化物チャネル強誘電体ゲートトランジスタの作製, 応用物理学会北陸・信越支部シンポジウム、第2回有機・無機エレクトロニクスシンポジウム, July 2014.
• 徳光永輔. 溶液プロセスから作成した酸化物チャネル強誘電体ゲートトランジスタ, 電子情報通信学会電子デバイス研究専門委員会（ED研）特別ワークショップ「酸化物材料：その多彩なデバイス応用」, Mar. 2014.
• 羽賀健一, 徳光永輔. a-In-Ga-Zn-O チャネル強誘電体ゲート薄膜トランジスタの作製, 第30回強誘電体応用会議(fma30), pp. 25, May 2013.
• 徳光永輔. 応用電子物性分科会70周年によせて ――応電の思い出と機能性酸化物デバイス研究――, 第60回応用物理学会春季学術講演会, Mar. 2013.
• 金子幸広, 西谷雄, 上田路人, 徳光永輔, 辻村歩. 高速かつ多値記憶可能な60 nm強誘電体ゲートトランジスタ, 第７３回応用物理学会学術講演会, Sept. 2012.
• 羽賀健一, 大岩朝洋, 徳光永輔. IGZOおよびIn2O3をチャネルに用いた強誘電体ゲートTFTの作製, 薄膜材料デバイス研究会 第六回研究集会, 3P40, Nov. 2009.
• 奥村優作, 徳光永輔. ゾルゲル法によるITO及びIn2O3薄膜の形成と酸化物チャネル薄膜トランジスタへの応用, 薄膜材料デバイス研究会 第六回研究集会, 2P39, Nov. 2009.
• Lee Gwang Geun, Hoowon Yoon, Yosihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu. Ferroelectric Behaviors of P(VDF-TrFE) Thin Films on Transparent ITO Electrode, 第70回 応用物理学会学術講演会, 第70回 応用物理学会学術講演会, 11p-L-2, Sept. 2009.
• 中田充, 竹知和重, 東和文, 徳光永輔, 山口弘高, 金子節夫. エキシマレーザを用いたプラスチック基板上a-inGaZnO4 TFT特性の改善, 第５６回 応用物理学関係連合会講演会, 第５６回 応用物理学関係連合会講演会, 31p-ZK-8, Mar. 2009.
• 近藤洋平, 大岩朝洋, 羽賀健一, 徳光永輔. Bi1.5Zn1.0b1.5O7をゲート絶縁膜に用いた酸化物チャネル薄膜トランジスタの作製, 第５６回 応用物理学関係連合会講演会, 第５６回 応用物理学関係連合会講演会, 31p-ZH-12/Ⅱ, Mar. 2009.
• 中田充, 竹知和重, 東和文, 徳光永輔, 山口弘高, 金子節夫. エキシマレーザを用いたプラスチック基板上ZnO TFT特性の改善, 第５６回 応用物理学関係連合会講演会, 第５６回 応用物理学関係連合会講演会, 31p-ZK-7, Mar. 2009.
• 大岩朝洋, 近藤洋平, 中田充, 徳光永輔. 強誘電体・高誘電率材料をゲート絶縁膜に用いたIGZOチャネル薄膜トランジスタの作製と評価, 第69回応用物理学会学術講演会, 2008年秋季 第69回応用物理学会学術講演会 講演予稿集, 3a-K-9, Sept. 2008.
• 徳光永輔, 柴田宏, 大岩朝洋, 近藤洋平. 強誘電体および高誘電率材料をゲート絶縁膜に用いた酸化物チャネル薄膜トランジスタ, 信学技報、SDM2008-11、OME2008-11(2008-4), 電子情報通信学会, Vol. 108, No. 1, pp. 51-56, Apr. 2008.
• 柴田宏, 大岩朝洋, 徳光永輔. 酸化物半導体InGaZnO膜の強誘電体ゲート薄膜トランジスタへの適用, 第５５回 応用物理学関係連合会講演会, 第５５回 応用物理学関係連合会講演会 講演予稿集, No. 30a-P14-29, Mar. 2008.
• 藤村朋史, 瀋悦, 徳光永輔. 研磨による強誘電体表面の平坦化をおこなったBLT/ITO構造トランジスタの電気的特性, 第67回応用物理学会学術講演会, No. 31a-V-9, Aug. 2006.
• 日野史郎, 畑山智裕, 徳光永輔, 三浦成久, 大森達夫. MOCVD法により形成したAl2O3薄膜をゲート絶縁膜とする4H-SiC MOS-FETの作製と評価, 第67回応用物理学会学術講演会, 第67回応用物理学会学術講演会, No. 31a-ZG-10, Aug. 2006.
• 日野史郎, 畑山智裕, 徳光永輔, 三浦成久, 大森達夫. MOCVD法による堆積膜／SiCの作製と評価, 信学技報, 応用物理学会分科会シリコンテクノロジー, IEICE Technical Report、SDM2006-42, Vol. 106, No. 108, pp. 1-5, June 2006.
• 徳光永輔, 大見俊一郎, 岩井洋. High-k　ゲート絶縁膜用酸化物材料の研究, 電気学会電子材料研究会, 電気学会電子材料研究会資料, Vol. EFM-01, pp. 37-41, Sept. 2001.
• E.Tokumitsu, N.Kawaguchi, S.M.Yoon. Switchable NAND/NOR Logic-Gate Using Ferroelectric Control Capacitor, Ext. Abst. 20th Electronic Materials Symp., Nara, Japan, pp. 41-42, June 2001.
• Sung-ming YOON, Yuji KURITA, Eisuke TOKUMITSU, Hiroshi ISHIWARA. Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors, Japanese Journal Applied Physics, Vol. 37, No. 3B, pp. 1110-1115, Mar. 1998.
• Eisuke Tokumitsu. Partial Switching Kinetics of Ferroelectric PZT Thin Films Prepared by Sol-Gel Technique, Japanese Journal Applied Physics, Vol. 33, No. 9B, pp. 5201-5206, July 1994.

その他の論文・著書など

• 徳光永輔. FeRAMの最近の進展と強誘電体ゲート構造メモリ, JSAP Catalog, 応用物理学会薄膜・表面分科会、第35回薄膜・表面物理ｾﾐﾅｰ「次世代ﾅﾉｽｹｰﾙﾒﾓﾘｰの薄膜・ﾄﾞｯﾄ・界面制御」, No. AP072329, pp. 55-60, July 2007.
• Eisuke Tokumitsu. Tutorial 1:Materials and Processes for Nonvolatile Memories---Ferroelectric Materials and FeRAM---, 2007 MRS Spring Meeting,, Apr. 2007.

特許など

• 徳光永輔, 原田　裕一　. グラフェンの改質方法. 特許. 登録. 国立大学法人東京工業大学, 日本電信電話株式会社. 2012/07/20. 特願2012-161320. 2014/02/03. 特開2014-019622. 特許第5783609号. 2015/07/31 2015.
• 徳光永輔, 原田　裕一. 半導体装置の製造方法. 特許. 登録. 国立大学法人東京工業大学, 日本電信電話株式会社. 2012/07/20. 特願2012-161322. 2014/02/03. 特開2014-022631. 特許第5825683号. 2015/10/23 2015.
• 徳光永輔, 原田　裕一. ＭＯＳ構造の製造方法. 特許. 公開. 国立大学法人東京工業大学, 日本電信電話株式会社. 2012/02/10. 特願2012-026957. 2013/08/22. 特開2013-165144. 2013.
• 徳光永輔, 守谷　仁, 日野　史郎, 三浦　成久, 大森　達夫. 炭化珪素半導体装置の製造方法. 特許. 登録. 国立大学法人東京工業大学, 三菱電機株式会社. 2008/08/28. 特願2008-219554. 2010/03/11. 特開2010-056285. 特許第5344873号. 2013/08/23 2013.
• 徳光永輔, 日野　史郎, 加藤　潤, 三浦　成久. 炭化珪素半導体装置の製造方法. 特許. 登録. 国立大学法人東京工業大学, 三菱電機株式会社. 2007/08/16. 特願2007-212141. 2009/03/05. 特開2009-049099. 特許第5072482号. 2012/08/31 2012.
• 徳光永輔, 日野　史郎, 畑山　智裕, 三浦　成久, 大森　達夫. 炭化珪素電界効果型トランジスタ及びその製造方法. 特許. 登録. 国立大学法人東京工業大学, 三菱電機株式会社. 2007/07/04. 特願2007-176089. 2009/01/22. 特開2009-016530. 特許第5519901号. 2014/04/11 2014.
• 徳光永輔. 固体電子装置およびその作製方法. 特許. 公開. 国立大学法人東京工業大学. 2006/03/17. 特願2006-074642. 2007/09/27. 特開2007-250987. 2007.
• 徳光永輔, 日野　史郎, 三浦　成久, 尾関　龍夫. 半導体装置とゲート酸化膜の製造方法. 特許. 公開. 国立大学法人東京工業大学, 三菱電機株式会社. 2005/06/28. 特願2005-188347. 2007/01/18. 特開2007-012684. 2007.
• 徳光永輔. 固体電子装置. 特許. 公開. 国立大学法人東京工業大学. 2005/02/16. 特願2005-039208. 2006/05/11. 特開2006-121029. 2006.

学位論文

• Investigations on transport properties and a novel epitaxial growth technique for III-V compound semiconductors,  本文,  Doctor of Engineering,  東京工業大学,  1987/--/--, 

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