論文

• T. Fuse, Y. Kawano, M. Suzuki, Y. Aoyagi, K. Ishibashi. Coulomb peak shifts under terahertz-wave irradiation in carbon nanotube single-electron transistors, Appl. Phys. Lett., Vol. 190, No. 013119, Jan. 2007.
• N. Itoh, M. Numata, Y. Aoyagi, T. Yarita. Comparison of the behavior of 13C-and deuter ium-labeled polycyclic aromatic hydrocarbons in analyses by isotope dilution mass spectrometry in combination with pressurized liquid extraction, Journal of Chromatography, Vol. A1138, No. 1-2, pp. 26-31, 2007.
• S. Sugiura, T. Oda, Y. Aoyagi, R. Matsuo, T. Enomoto, T. Nakamura, M. Nakajima. Microfabricated airflow nozzle for microencapsulation of living cells into 150 micrometer microcapsules, Biomedical Microdevices, Vol. 19, No. 1, pp. 91-99, 2007.
• M. Maruyama, T. Yamamoto, Y. Kohara, Y. Katsuragi, Y. Mishima, Y. Aoyagi, R. Kominami. Mtf-1 lymphoma-susceptibility locus affects retention of large thymocytes with high ROS levels in mice after Y-irradiation, Biochemical and Biophysical Research Communications, Vol. 1354, No. 1, pp. 209-215, 2007.
• Takeuchi M., Shimizu H., Kajitani R., Kawasaki K., Kumagai Y., Koukitu A., Aoyagi Y.. Improvement of crystalline quality of N-polar AIN layers on c-plane sapphire by low-pressure flow-modulated MOCVD, Journal of Crystal Growth, Vol. 298, pp. 336-340, 2007.
• Fuse T., Kawano Y., Suzuki M., Aoyagi Y., Ishibashi K.. Coulomb peak shifts under terahertz-wave irradiation in carbon nanotube single-electron transistors, Appl.Phys.Lett., Vol. 90, No. 013119, 2007.
• Kuwano N., Hijikuro M., Hata S., Takeuchi M., Aoyagi Y.. TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template, Journal of Crystal Growth, Vol. 298, pp. 284-287, 2007.
• K. Tsukagoshi, S. Uryu, Y. Aoyagi. Quasi-periodic Coulomb blockade oscilations in a single-wall carbon nanotube bundle, Solid State Phenomina, Vol. 121-123, pp. 537-540, 2007.
• Sugiura S., Oda T., Aoyagi Y., Matsuo R., Enomoto T., Nakamura T., Nakajima M.. Microfabricated airflow nozzle for microencapsulation of living cells into 150 micrometer microcapsules, Biomedical Microdevices, Vol. 9, No. 1, pp. 91-99, 2007.
• Itoh N, Numata M, Aoyagi Y, Yarita T.. Comparison of the behavior of 13C-and deuterium-labeled polycyclic aromatic hydrocarbons in analyses by isotope dilution mass spectrometry in combination with pressurized liquid extraction, Journal of Chromatography, Vol. A1138, No. 1-2, pp. 26-31, 2007.
• K. Kawasaki, C. Koike, Y. Aoyagi, M. Takeuchi. Vertical AlGaN deep ultraviolet light emitting diode emitting at 322nm fabricated by the laser lift-off-technique, Appl. Phys. Lett., Vol. 189, No. 26, pp. 261114, 2007.
• T. Enomoto, T. Oda, Y. Aoyagi, S. Sugiura, M. Nakajima, M. Satake, M. Noguchi, N. Ohkohchi. Consistent liver metastases in a rat model by portal injection of microencapsulated cancer cells, Appl. Phys. Lett., Vol. 189, No. 26, pp. 261114, 2007.
• M. Takeuchi, H. Shimizu, R. Kajitani, K. Kawasaki, Y. Kumagai, A. Koukitu, Y. Aoyagi. Improvement of crystalline quality of N-polar AIN laers on c-plane sapphire by low-pressure flow-modulated MOCVD, Journal of Crystal Growth, Vol. 1268, pp. 336-340, 2007.
• N. Kuwano, M. Hijikuro, S. Hata, M. Takeuchi, Y. Aoyagi. TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template, Journal of Crystal Growth, Vol. 1298, pp. 284-287, 2007.
• Maruyama M., Yamamoto T., Kohara Y., Katsuragi Y., Mishima Y., Aoyagi Y., Kominami R.. Mtf-1 lymphoma-susceptibility locus affects retention of large thymocytes with high ROS levels in mice after Y-irradiation, Biochemical and Biophysical Research Communications, Vol. 354, No. 1, pp. 209-215, 2007.
• Enomoto T., Oda T., Aoyagi Y., Sugiura S., Nakajima M., Satake M., Noguchi M., Ohkohchi N.. Consistent liver metastases in a rat model by portal injection of microencapsulated cancer cells, Appl.Phys.Lett., Vol. 89, No. 26, pp. 261114, 2007.
• Kawasaki K., Koike C., Aoyagi Y., Takeuchi M.. Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique, Appl.Phys.Lett., Vol. 89, No. 26, pp. 261114, 2007.
• 川﨑　宏治, 武内　道一, 青柳　克信. 深紫外窒化物系発光デバイス, 応用物理学会分科会　日本光学会, Vol. 35, No. 5, pp. 246-253, May 2006.
• K. Shigeto, M. Kawamura, A.Yu. Kasumov, K. Tsukagoshi, K. Kono, Y. Aoyagi. Reproducible formation of nanoscale-gap electrodes for single-molecule measurements by combination of FIB deposition and tunneling current detection, Microelectronic Engineering, No. 83, pp. 1471-1473, Feb. 2006.
• Motoki Okinaka, Shin-ichiro Inoue, Kazuhito Tsukagoshi, Yoshinobu Aoyagi. Nonlinear optical polymer patterned by nanoimprint lithography as a photonic crystal wave guide structure, J.Vac.Sci.Technol.B, Vol. 24, No. 1, pp. 271-273, Jan. 2006.
• Shin-ichiro Inoue, Yoshinobu Aoyagi. Ultraviolet Second-Harmonic Generation and Sum-Frequency Mixing in Two-Dimensional Nonlinear Optical Polymer Photonic Crystals, JJAP, Vol. 45, No. 8A, pp. 6130-6107, 2006.
• Takayoshi Kanbara, Taishi Takenobu, Tetsuo Takahashi, Yoshihiro Iwasa, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Hiromichi Kataura. Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments, Appl.Phys.Lett., Vol. 88, pp. 053118-1--053118-3, 2006.
• K. Tsukagoshi, K. Shigeto, I. Yagi, Y. Aoyagi. Interface modification of a pentacene field-effect transistor with a submicrochannel, Appl.Phys.Lett., Vol. 89, pp. 113507, 2006.
• Motoki Okinaka, Kazuhito Tsukagoshi, Yoshinobu Aoyagi. Direct nanoimprint of inorganic-organic hybrid glass, J.Vac.Sci.Technol.B, Vol. 24, pp. 1402, 2006.
• Koichi Yamada, J. Takeya, K. Shigeto, K. Tsukagoshi, Y. Aoyagi, Y. Iwasa. Charge transport of copper phthalocyanine single-crystal field-effect transistors stable above 100℃, Appl.Phys.Lett., Vol. 88, pp. 122110, 2006.
• Kazuhito Tsukagoshi, Jun Tanabe, Iwao Yagi, Kunji Shigeto, Keiichi Yanagisawa, Yoshinobu Aoyagi. Organic light-emitting diode driven by organic thin film transistor on plasticsubstrates, J.Appl.Phys., Vol. 99, pp. 064506, 2006.
• J. Takaya, K. Yamada, K. Hara, K. Shigeto, K. Tsukagoshi, S. Ikehata, Y. Aoyagi. High-density electrostatic carrier doping in organic single-crystal transistor with polymer gel electrolyte, Appl.Phys.Lett., Vol. 88, pp. 112102, 2006.
• Hidekazu Shimotani, Takayoshi Kanbara, Yoshihiro Iwasa, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Miromichi Kataura. Gate capacitance in electrochemical transistor of single-walled carbon nanotube, Appl.Phys.Lett., Vol. 88, pp. 073104-073106, 2006.
• Taishi Takenobu, Tetsuo Takahashi, Takayoshi Kanbara, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Yoshihiro Iwasa. High-performance transparent flexible transistors using carbon nanotube films, Appl.Phys.Lett, No. 88, pp. 033511-1--033511-3, 2006.
• 塚越　一仁, 重藤　訓志, A.Yu. Kasumov, 川村　稔, 青柳　克信. ナノスケール物質電気伝導探索のためのナノギャップ電極作製と応用, 応用物理, Vol. 75, No. 3, pp. 332-337, 2006.
• Kazuhito Tsukagoshi, Iwao Yagi, Yoshinobu Aoyagi. Nano-scale interface controls for future plastic transistors, Science and Technology of Advanced Materials, Vol. 7, pp. 231-236, 2006.
• Aoyagi Y, Nishioka Y, Tobe F, Hasuda T, Takeya K, Fui M.-Y, Jin Y.-R, Li X.-W. Synthesis of 1-O-monoacyl or 12-O-monoacyl, 1-, 12-O-diacyl-, and 11,12-dehydrated excisanin A 7, 14-acetonides and their cytotoxic activity, Bioorganic and Medicinal Chemistry, Vol. 14, No. 17, pp. 5802-5811, 2006.
• Aoyagi Y, Mizusaki T, Shishikura M, Komine T, Yoshinaga T, Inaba H, Ohta A, Takeya K. Efficient synthesis of pyrroles and 4,5,6,7-tetrahydroindoles via palladium-catalyzed oxidation of hydroxy-enamines, Tetrahedron, Vol. 62, No. 36, pp. 8533-8538, 2006.
• Kamimura K, Aoyagi Y, Matsushima S, Horikawa K, Itohara H, Iso Y. Development of ultra wideband radio system for short-range radar applications, Furukawa Review, Vol. 30, pp. 7-12, 2006.
• Kasuga A, Ogiwara E, Aoyagi Y, Kimura H. Changes in isoflavone content of soybeasn during heating process, Nippon Shokuhin Kagaku Kogaku Kaishi, Vol. 53, No. 7, pp. 365-372, 2006.
• Matsuoka M, Kawano Y, Akiyama Y, Shiozawa N, Hayashi K, Mekada Y, Hirata H, Aoyagi Y. The physical activity and nutritional intake in community-welling elderly:The Nakanojo Study, Japanese Journal of Physical Fitness and Sports Medicine, Vol. 55, No. SUPPL., pp. 199-203, 2006.
• Izawa H, Aoyagi Y. Inhibition of angiotensin converting enzyme by mushroom, Nippon Shokuhin Kagaku Kogaku Kaishi, Vol. 53, No. 9, pp. 459-465, 2006.
• Itoh N, Aoyagi Y, Yarita T. Optimization of the dopant for the trace determination of polycyclic aromatic hydrocarbons by liquid chromatography/dopant-assisted atmospheric-pressure photoionization/mass spectrometry, Journal of Chromatography, Vol. A1131, No. 1-2, pp. 285-288, 2006.
• Aoyagi Y, Takahashi Y, Fukaya H, Takeya K, Aiyama R, Matsuzaki T, Hashimoto S, Kurihara T. Semisynthesis of isetexane diterpenoid analogues and their cytotoxic activity, Chemical and Pharmaceutical Bulletin, Vol. 54, No. 11, pp. 1602-1604, 2006.
• Itoh N, Numata M, Aoyagi Y, Yarita T. Effect of residues remaining in the injection liner of a gas chromatograph on the quantification of polycyclic aromatic hydrocarbons by isotope dilution mass spectrometry using deuterium-labeled internal standards, Journal of Chromatography, Vol. A1134, No. 1-2, pp. 246-252, 2006.
• Enomoto T, Oda T, Aoyagi Y, Sugiura S, Nakajima M, Satake M, Noguchi M, Ohkohchi N. Consistent liver metastases in a rat model by portal injection of microencapsulated cancer cells, Cancer Research, Vol. 66, No. 23, pp. 11131-11139, 2006.
• M. Okinaka, K. Tsukagoshi, Y. Aoyagi. Direct nanoimprint of inorganic-organic hybrid glass, Microelectronics and Nanometer Structures, Vol. 24, No. 3, pp. 1402-1404, 2006.
• M. Itoh, T. Kinoshita, C. Koike, M. Takeuchi, K. Kawasaki, Y. Aoyagi. Straight and smooth etching of GaN (1100) plane by combination of reactive ion etching and KOH wet etching techniques, JJAP, Vol. 45, No. 5A, pp. 3988-3991, 2006.
• M. Itoh, T. Kinoshita, K. Kawasaki, M. Takeuchi, C. Koike, Y. Aoyagi. Fabrication of GaN-based striped structures along the <1120> direction by the combination of RIE dry-etching and KOH wet-etching techniques to recover dry-etching damage, Solid State Physics, Vol. 3, pp. 1624-1628, 2006.
• T. Obata, N. Matsumura, K. Ogiwara, H. Hirayama, Y. Aoyagi, K. Ishibashi. Investigation of defects in GaN with varying Mg doping concentrations, Solid State Physics, Vol. 3, pp. 1775-1778, 2006.
• Morimichi Itoh, Toru Kinoshita, Choshiro Koike, Misaichi Takeuchi, Koji Kawasaki, Yoshinobu Aoyagi. Straight and Smooth Etching of GaN $(1/bar{1}00)$ Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques, JJAP, Vol. 45, No. 5A, pp. 3988-3991, 2006.
• D. Tsuya, M. Suzuki, Y. Aoyagi, K. Ishibashi. Exclusive-OR gate using a two-input single-electron transistor in single-wall carbon nanotubes, Appl.Phys.Lett., Vol. 87, No. 15, pp. 153101-1--153101-3, Oct. 2005.
• T. Tsukamoto, S. Moriyama, D. Tsuya, M. Suzuki, T. Yamaguchi, Y. Aoyagi, K. Ishibashi. Carbon nanotube quantum dots fabricated on a GaAs/AlGaAs two-dimensional electron gas substrate, J.Appl.Phys., Vol. 98, pp. 076106-076108, Oct. 2005.
• T. Kanbara, K. Tsukagoshi, Y. Aoyagi, Y. Iwasa. Suppression of bias- and temperature-dependent conductance by gate-voltage in multi-walled carbon nanotube, AIP Cof. Proc., Vol. 786, pp. 499-503, Sept. 2005.
• S. Moriyama, T. Fuse, Y. Aoyagi, K. Ishibashi. Excitation spectroscopy of two-electron shell structures in carbon nanotube quantum dots in magnetic fields, Appl.Phys.Lett., Vol. 87, No. 7, pp. 073103-1--073103-3, Aug. 2005.
• K. Matsuda, T. Saiki, S. Nomura, Y. Aoyagi. Local density of states mapping of a field-induced quantum dot by near-field photoluminescence microscopy, Appl.Phys.Lett., Vol. 87, No. 4, pp. 043112-1--043112-3, July 2005.
• S. Nomura, Y. Aoyagi. Optical detection of spin polarization of electrons in quantum dot edge channels, AIP Conf.Proc., Vol. 772, pp. 571-572, June 2005.
• S. Moriyama, T. Fuse, M. Suzuki, Y. Aoyagi, K. Ishibashi. Four-Electron Shell Structures and an Interacting Two-Electron System in Carbon-Nanotube Quantum Dots, Physical Review Letters, Vol. 94, No. 18, pp. 186806-1--186806-4, May 2005.
• Jun Takeya, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Taishi Takenobu, Yoshihiro Iwasa. Hall Effect of Quasi-Hole Gas in Organic Single-Crystal Transistors, JJAP, Vol. 44, No. 46, pp. L1393-L1396, 2005.
• I.Yagi, K.Shigeto, K.Tsukagoshi, Y.Aoyagi. Alignment-Free Top-Contact Formation for Organic Thin Film Transistors with Submicron-Length Channel, Jpn.J.Appl.Phys., Vol. 44, No. 16, pp. L479-L481, 2005.
• S. Inoue, Y. Aoyagi. Engineered nonlinear optical properties of two-dimensional photonic crystals, Physics Review Letters, Vol. 94, No. 10, pp. 103904-1--103904-4, 2005.
• S.Inoue, Y.Aoyagi. Design and Fabrication of Two-Dimensional Photonic Crystals with Predetermined Nonlinear Optical Properties, Physical Review Letters, Vol. 94, No. 10, pp. 103904-1--103904-4, 2005.
• 塚越　一仁, 重藤　訓志, A. Kasumov, 川村　稔, 青柳　克信, 小林　知洋, 仙波　健吾, 兒玉　健, 西川　浩之, 池本　勲, 菊池　耕一, V.T. Volkov, Yu.A. Kasumov, R. Deblock, S. Gueron, H. Bouchiat. ナノカーボン材料伝導研究のための架橋型ナノ電極作製と応用, 顕微鏡, Vol. 40, No. 2, pp. 96-99, 2005.
• D. Tsuya, M. Suzuki, Y. Aoyagi, K. Ishibashi. Characterization and estimation of tunnel barrier height in metallic single-wall carbon nanotube quantum dots, Microelectronic Engineering, No. 82, pp. 196-200, 2005.
• J. Hamrle, T. Kimura, Y. Otani, K. Tsukagoshi, Y. Aoyagi. Current distribution inside Py/Cu lateral spin-valve devices, Phys. Rev.B, Vol. B71, pp. 094402, 2005.
• S.Moriyama, T.Fuse, M.Suzuki, Y.Aoyagi, K.Ishibashi. Importance of electron-electron interactions and Zeeman splitting in single-wall carbon nanotube quantum dots, Physica E, No. 26, pp. 473-476, 2005.
• Iwao Yagi, Kazuhito Tsukagoshi, Yoshinobu Aoyagi. Modification of the electric conduction at the pentacene/SiO₂ interface by surface termination of SiO₂, Appl.Phys.Lett., No. 86, pp. 103502-1?103502-3, 2005.
• Daiju Tsuya, Masaki Suzuki, Yoshinobu Aoyagi, Koji Ishibashi. Quantum Dots and Their Tunnel Barrier in Semiconducting Single-Wall Carbon Nanotubes with a p-Type Behavior, Jpn.J.Appl.Phys., Vol. 44, No. 4B, pp. 2596-2599, 2005.
• A.Yu. Kasumov, K. Tsukagoshi, M. Kawamura, T. Kobayashi, Y. Aoyagi, K. Senda, T. Kodama, H. Nishikawa, I. Ikemoto, K. Kikuchi, V.T. Volkov, Yu.A. Kosmov, R. Deblock, S. Gueron, H. Bouchiat. Proximity effect in a superconductor-metallofullerene-superconductor molecular junction, The American Physical Society, No. B72, pp. 033414-1--033414-4, 2005.
• Daiju Tsuya, Masaki Suzuki, Yoshinobu Aoyagi, Koji Ishibashi. Fabrication of a Single-Electron Inverter in Single-Wall Carbon Nanotubes, Appl.Phys., Vol. 44, No. 4A, pp. 1588-1591, 2005.
• T.Takenobu, T.Kanbara, N.Akima, T.Takahashi, M.Shiraishi, K.Tsukagoshi, H.Kataura, Y.Aoyagi, Y.Iwasa. Control of Carrier Density by a Solution Method in Carbon-Nanotube Devices, Adv.Mater., No. 17, pp. 2430-2434, 2005.
• Kazuhito Tsukagoshi, Iwao Yagi, Kunji Shigeto, Yoshinobu Aoyagi. Pentacene transistor encapsulated by poly-para-sylylene behaving as gate dielectric insulator and passivation film, Appl.Phys.Lett., No. 87, pp. 183502-1--3, 2005.
• T. Kanbara, Y. Iwasa, K. Tsukagoshi, Y. Aoyagi. Suppression of the unconventional metallic behavior by gate voltage in MWNT device, Physica E, Vol. 29, No. 3-4, pp. 698-701, 2005.
• D. Tsuya, M. Suzuki, Y. Aoyagi, K. Ishibashi. Fabrication of a single-electron inverter in single-wall carbon nanotubes, JJAP, Vol. 44, No. 4A, pp. 1588-1591, 2005.
• Takayoshi Kanbara, Tatsuya Iwasa, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Yoshihiro Iwasa. Gate-induced crossover from unconventional metals to Fermi liquids in multiwalled carbon nanotubes, Appl.Phys.Lett., Vol. 85, No. 26, pp. 6404-6406, Dec. 2004.
• T. Kimura, J. Hamrle, Y. Otani, K. Tsukagoshi, Y. Aoyagi. Enhancement of nonlocal spin-valve signal using spin accumulation in local spin-valve configuration, Appl.Phys.Lett., Vol. 85, No. 22, pp. 5382-5384, Nov. 2004.
• Iwao Yagi, Kazuhito Tsukagoshi, Yoshinou Aoyagi. Growth control of pentacene films on SiO_2/Si substrates towards formation of flat conduction layers, Elsevier, Science Direct, Thin Solid Films, No. 467, pp. 168-171, Mar. 2004.
• S. Moriyama, T. Fuse, M. Suzuki, Y. Aoyagi, K. Ishibashi. Selecting single quantum dots from a bundle of single-wall carbon nanotubes using the large current flow process, Elsevier, Science and Technology of Advanced Materials, No. 5, pp. 613-615, Feb. 2004.
• Akinobu Kanda, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Youiti Ootuka. Gate-Voltage Dependence of Zero-Bias Anomalies in Multiwall Carbon Nanotubes, Physical Review Letters, Vol. 92, No. 3, pp. 036801-1?036801-4, 2004.
• Shintaro Nomura, Yoshinobu Aoyagi. Optical Probing of Spin Polarization of Electrons in Quantum Dot Edge Channels, Physical Review Letters, Vol. 93, No. 9, pp. 096803-1?096803-4, 2004.
• Yoshinobu Aoyagi. Nanotechnology and Quantum Electronics, ﾚｰｻﾞｰ研究, Vol. 32, No. 2, pp. 75-, 2004.
• K. Tsukagoshi, E. Watanabe, I. Yagi, N. Yoneya, Y. Aoyagi. Multiple layers conduction and scattering property in multi-walled carbon nanotubes, New Journal of Physics, Vol. 6, pp. 1-13, 2004.
• K. Ozasa, Y. Aoyagi, M. Hara, M. Maeda, A. Yamane, Y. Arai. Enhanced photoluminescence of InGaAs dots induced by nanoprobe identation, Physica E, Vol. 21, No. 2月４日, pp. 265-269, 2004.
• T. Kimura, Y. Otani, K. Tsukagoshi, Y. Aoyagi. Nano-local Hall resistance measured in submicron-scale non-magnetic/ferromagnetic junctions, Journal of Magnetism and Magnetic Materials, Vol. 272-276, pp. e1333-e1334, 2004.
• T. Fuse, S. Moriyama, Y. Aoyagi, M. Suzuki, K. Ishibashi. Two electron and four-electron periodicity in single-wall carbon nanotube quantum dots, Superlattices and Microstructures, Vol. 34, pp. 377-382, 2004.
• S. Moriyama, K. Toratani, D. Tsuya, M. Suzuki, Y. Aoyagi, K. Ishibashi. Electrical transport in semiconducting single-wall carbon nanotubes, Physica E, Vol. 24, pp. 46-49, 2004.
• T. Kimura, Y. Otani, I. Yagi, K. Tsukagoshi, Y. Aoyagi. Domain wall drag due to dc current injection into ferromagnetic nano-wires, Journal of Magnetism and Magnetic Materials, Vol. 272-276, pp. e1347-e1348, 2004.
• 青柳　克信, 田中　悟, 武内　道一, 平山　秀樹. ナノテクノロジーと深紫外発光素子の開発, 固体物理, Vol. 39, No. 5, pp. 265-278, 2004.
• E. Watanabe, K. Tsukagoshi, I. Yagi, Y. Aoyagi. Fabrication of Coulomb blockade device utilizing the 0.34nm interlayer spacing in a multiwalled carbon nanotube, Microelectronic Ingineering, Vol. 73-74, No. 73/74, pp. 666-669, 2004.
• K. Tsukagoshi, E. Watanabe, I. Yagi, Y. Aoyagi. The formation of nanometer-scale gaps by electrical degradation and their application to C$_{60}$ transport measurements, Microelectronic Engineering, Vol. 73/74, No. 73/74, pp. 686-688, 2004.
• I. Yagi, K. Tsukagoshi, E. Watanabe, Y. Aoyagi. Carbon nanotubes with a nanogap for nanoscale organic devices, Microelectronic Engineering, No. 73/74, pp. 675-678, 2004.
• K. Tsukagoshi, I. Yagi, Y. Aoyagi. Pentacene nanotransistor with carbon nanotube electrodes, Appl.Phys.Lett., No. 85, pp. 1021-1023, 2004.
• Kazuhito Tsukagoshi, Iwao Yagi, Yoshinobu Aoyagi. Pentacene nanotransistor with carbon nanotube electrodes, Appl.Phys.Lett., Vol. 85, No. 6, pp. 1021-1023, 2004.
• T. Obata, H. Hirayama, Y. Aoyagi, K. Ishibashi. Growth and annealing conditions of high Al-content p-type AlGaN for deep-UV LEDs, Physica Status Solidi C, No. 10, pp. 2803-2807, 2004.
• S. Moriyama, T. Fuse, M. Suzuki, Y. Aoyagi, K. Ishibashi. Selecting single quantum dots from a bundle of single-wall carbon nanotubes using the large current flow process, Science and Technology of Advanced Materials, Vol. 5, No. 5-6, pp. 613-615, 2004.
• T. Obata, H. Hirayama, Y. Aoyagi, K. Ishibashi. Growth and annealing conditions of high Al-content p-type AlGaN for deep-UV LEDs, Physica Status Solidi A, Vol. 201, No. 12, pp. 2803-2807, 2004.
• Shingo Okubo, Takeshi Sekine, Shinzo Suzuki, Yohji Achiba, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Hiromichi Kataura. Purification of Single-Wall Carbon Nanotubes Synthesized from Alcohol by Catalytic Chemical Vapor Deposition, JJAP, Vol. 43, No. 3B, pp. L396-L398, 2004.
• S. Inoue, Y. Aoyagi. Photonic band structure and related properties of photonic crystal waveguides in nonlinear optical polymers with metallic cladding, Physics Review Letters, Vol. B69, No. 25109, pp. 1-6, 2004.
• Hideki Hirayama, Yoshinobu Aoyagi. Quaternary InAlGaN-based deep-UV LED with high-Al-content p-type AlGaN, Proc.SPIE, Vol. 5359, pp. 422, 2004.
• T. Kimura, J. Hamrle, Y. Otani, K. Tsukagoshi, Y. Aoyagi. Spin-dependent boundary resistance in the lateral spin-valve structure, Appl.Phys.Lett., Vol. 85, No. 16, pp. 3501-3503, 2004.
• D. Tsuya, M. Suzuki, S. Moriyama, Y. Aoyagi, K. Ishibashi. Observation of discrete quantum levels in multi-wall carbon nanotube quantum dots, Physica E, No. 24, pp. 50-53, 2004.
• I. Yagi, K. Tsukagoshi, Y. Aoyagi. Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method, Appl.Phys.Lett., Vol. 84, pp. 813-815, 2004.
• T. Kimura, Y. Otani, K. Tsukagoshi, Y. Aoyagi. Spin-current-assisted domain-wall depinning in a submicron magnetic wire, J.Appl.Phys., Vol. 94, No. 12, pp. 7947-7949, Dec. 2003.
• T. Kimura, Y. Otani, I. Yagi, K. Tsukagoshi, Y. Aoyagi. Suppressed pinning field of a trapped domain wall due to direct current injection, J.Appl.Phys., Vol. 94, No. 11, pp. 7266-7269, Dec. 2003.
• T. Fuse, S. Moriyama, M. suzuki, Y. Aoyagi, K. Ishibashi. Effect of the large current flow on the low-temperature transport propertie in a bundle of single-walled carbon nanotubes, Appl.Phys.Lett., Vol. 83, No. 18, pp. 3803-3805, Nov. 2003.
• K. Ishibashi, D. Tsuya, M. Suzuki, Y. Aoyagi. Fabrication of a single-electron inverter in multiwall carbon nanotubes, Appl.Phys.Lett., Vol. 82, No. 19, pp. 3307-3309, May 2003.
• H. Teisseyre, T. Suski, S.P. Lepkowske, S. Anceau, P. Perlin, P. Lefebvre, L.Konczewicz, H. Hirayama, Y. Aoyagi. Determination of built-in electric fields in quaternary InAlGaN heterostructures, Appl.Phys.Lett., Vol. 82, No. 10, pp. 1541-1543, Mar. 2003.
• Kazunari Matsuda, Toshiharu Saiki, Shintaro Nomura, Masaru Mihara, Yoshinobu Aoyagi. Real-space mapping of exciton wave vunction in a GaAs quantum dot by near-field optical imaging spectroscopy, Phys.state.sol.(b), Vol. 238, No. 2, pp. 285-288, 2003.
• Shintaro Nomura, Yoshinobu Aoyagi. Density of states of a quantum dot array probed by photoluminescence spectra, Surface science, Vol. 529, pp. 171-179, 2003.
• 平山　秀樹, 秋田　勝史, 中村　孝夫, 木山　誠, 青柳　克信. InAlGaN 4元混晶を用いた紫外LEDの短波長化と高効率化, 信学技報, Vol. 2003, No. 10, pp. 13-18, 2003.
• K. Matsuda, T. Saiki, S. Nomura, M. Mihara, Y. Aoyagi, S. Nair, T. Takagahara. Near-Field Optical Mapping Exciton Wave Functions in a GaAs Quantum Dot, Physical Review Letters, Vol. 91, No. 17, pp. 177401-1?177401-4, 2003.
• Michio Watanabe, Koji Ishibashi, Yoshinobu Aoyagi. Superconducting SET with tunable electromagnetic environment, Physica E, Vol. 18, pp. 25-26, 2003.
• Shintaro Nomura, Yoshinobu Aoyagi. Density of states of a quantum dot array probed by photoluminescence spectra, Surface Science, No. 529, pp. 171-, 2003.
• Yoshiyuki Kurokawa, Shintaro Nomura, Tadashi Takemori, Yoshinobu Aoyagi. Fast algorithm for calculating nonlinear response functions of large quantum systems and its application to TPA spectra, Proc.SPIE, Vol. 4797, pp. 179, 2003.
• K. Aoki, H.T. Miyazaki, H. Hirayama, K. Inoshita, T. Baba, K. Sakoda, N. Shinya, Y. Aoyagi. Microassembly of semiconductor three-dimensional photonic crystals, Nature Materials, Vol. 2, pp. 117-121, 2003.
• Y. Aoyagi, Y. Doi, T. Iwata. Mechanical properties and highly ordered structure of ultra-high-molecular-weight poly [(R)]-3-hydroxybutyrate] films:Effects of annealing and two-step drawing, Polymer Degradation and Stability, Vol. 79, No. 2, pp. 209-216, 2003.
• T. Iwata, K. Tsunoda, Y. Aoyagi, S. Kusaka, N. Yonezawa, Y. Doi. Mechanical properties of uniazially cold-drawn films of poly([R]-3-hydroxybutyrate), Polymer Degradation and Stability, Vol. 79, No. 2, pp. 217-224, 2003.
• K. Ishibashi, M. Suzuki, D. Tsuya, Y. Aoyagi. Fabrication of single electron transistors in multi-wall carbon nanotubes using Ar beam irradiation, Microelectronic Engineering, Vol. 67-68, pp. 749-754, 2003.
• D. Tsuya, K. Ishibashi, M. Suzuki, Y. Aoyagi. Local Ar beam irradiation for making tunneling barriers and its application to single electron inverter in multi-wall carbon nanotubes, Physica E, Vol. 19, No. 1-2, pp. 157-160, 2003.
• T. Fuse, S. Moriyama, Y. Aoyagi, M. Suzuki, K. Ishibashi. Two-electron and four-electron periodicity in single-wall carbon nanotube quantum dots, Superlattices and Microstructures, Vol. 34, No. 3-6, pp. 377-382, 2003.
• K. Matsuda, T. Saiki, S. Nomura, M. Mihara, Y. Aoyagi, S. Nair, T. Takagahara. Near-Field Optical Mapping of Exciton Wave Functions in a GaAs Quantum Dot, Phys.Rev.Lett., Vol. 91, No. 17, pp. 1774011-1774014, 2003.
• K. Matsuda, T. Saiki, S. Nomura, M. Mihara, Y. Aoyagi. Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm, Appl.Phys.Lett., Vol. 81, No. 12, pp. 2291-2293, 2003.
• Kazunari Ozasa, Yoshinobu Aoyagi, Akihiko Yamane, Yoshio Arai. Enhanced photoluminescence of InGaAs/GaAs quantum dots induced by nanoprobe pressure effects, Appl.Phys.Lett., Vol. 83, No. 11, pp. 2247-2249, 2003.
• Eiichiro Watanabe, Kazuhito Tsukagoshi, Iwao Yagi, Yoshinobu Aoyagi. Coulomb blockade oscillation in a multiwalled carbon nanotube with internanotube tunnel junctions, Appl.Phys.Lett., Vol. 83, No. 7, pp. 1429-1431, 2003.
• Kazunari Ozasa, Yoshinobu Aoyagi, Masaya Iwaki, Hiroki Kurata. Facets, indium distribution, and lattice distortion of InGaAs/GaAs quantum dots observed by three-dimensional scanning transmission electron microscope, Journal of Applied Physics, Vol. 94, No. 1, pp. 313-317, 2003.
• Daisuke Nishide, H. Kataura, S. Suzuki, K. Tsukagoshi, Y. Aoyagi, Y. Achiba. High-yield production of single-wall carbon nanotubes in nitrogen gas, Chemical Physics Letters, Vol. 372, pp. 45-50, 2003.
• K. Tsukagoshi, At. Suzuki, I. Yagi, E. Watanabe, Y. Aoyagi, H. Ago, s. Ohshima, M. Yumura. High density current operation in nanographite fiber synthesized by chemical vapor deposition, Journal of Applied Physics, Vol. 94, No. 5, pp. 3516-3519, 2003.
• Michio Watanabe, Koji Ishibashi, Yoshinobu Aoyagi. Superconducting SET with tunable electomagnetic environment, Physica E, No. E18, pp. 25, 2003.
• Shin-ichiro Inoue, Kotaro Kajikawa, Yoshinobu Aoyagi. Dry-etching method for fabricating photonic-crystal waveguides in nonlinear-optical polymers, Appl.Phys.Lett., Vol. 82, No. 18, pp. 2966-2968, 2003.
• Hirayama H., Yamanaka T., Hiraoka K., Hirata A., Aoyagi Y.. Fabrication of p-n junction with Mg-doped wide bandgap InAlGaN for applicatation to UV emitters, Mat. Res. Soc. Symp. Proc., Vol. 693, pp. I4.10.1, 2002.
• Jun B., Hirayama H., Aoyagi Y.. Effect of thermal annealing on the Pd/Au contact to P-type Al_0.15Ga_0.85N, Jpn. J. Appl. Phys., Vol. 41, pp. 581, 2002.
• Avramescu A.S., Hirayama H., Aoyagi Y., Tanaka S.. Growth of A1N-SiC solid solutions by sequential supply epitaxy, J. Crystal. Growth, Vol. 234, pp. 435, 2002.
• Meguro T., HIda A., Suzuki M., Koguchi Y., Yuzawa T., Takai H., Yamamto Y., Maeda K., Aoyagi Y.. Control of electronic states of surface with highly-charged ion impact, Int. Symp. on Manipulation of Atoms and Molecules by Electronic Excitations(IS-MAMEE), Tokyo Japan, 2002.
• A. Shailos., C. Prasad., M. Elhassan., J.P. Bird., Akis R., D.K. Ferry., L-H. Lin., Aoki N., Ochiai Y., Ishibashi K., Aoyagi Y.. Non-weak-localization signature in the average conductance of open quantum-dot arrays, Physica E, Vol. 12, pp. 630, 2002.
• Hirayama H., Enomoto Y., Kinoshita A., Hirata A., Aoyagi Y.. Room-temperature intense 320nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells, Appl. Phys. Lett., Vol. 80, pp. 1589, 2002.
• Aoki N., Oonishi D., Iwase Y., Ochiai Y., Ishibashi K., Aoyagi Y., J.P .Bird.. Influence of interdot coupling on electron-wave interference in an open quantum-dot molecule, Appl. Phys. Lett., Vol. 80, pp. 2970, 2002.
• Hirayama H., Kinoshita A., Hirata A., Aoyagi Y.. 280-400nm UV intense emission from inAlGaN/in(Al)GaN multi-quantum wells, 4th Int. Symp. on Blue Laser and Light Emitting Diodes (ISBLLED-2002), Cordoba, Spain, 2002.
• Ishibashi K., Suzuki M., Ida T., Aoyagi Y.. Single and coupled quantum dots in single-wall carbon nanotubes, 1st Int. Workshop on Quantum Dots for Quantum Computing and Classical Size Effect Circuits, Aki-gun Geisei-mura, Japan, 2002.
• Ishibashi K., Aoyagi Y.. Interaction of electromagnetic wave with quantum dots, Physica B, Vol. 314, pp. 437, 2002.
• Kinoshita A., Hirayama H., Ainoya M., Yamabi T., Hirata A., Aoyagi Y.. High efficiency UV-emission at 345nm from InAlGaN light-emitting diodes, Mat. Res. Soc. Symp. Proc., Vol. 693, pp. I11.24.1, 2002.
• Yamabi T., Kinoshita A., Hirayama H., Ainoya M., Hirata A., Araki T., Nanishi Y., Aoyagi Y.. Investigation of the optimum growth conditions of wide-bandgap InAlGaN quaternary for UV-LEDs, Mat. Res. Soc. Symp. Proc., Vol. 693, pp. I3.42.1, 2002.
• Hirayama H., Kinoshita A., Yamabi T., Enomoto Y., Hirata A., Araki T., Nanishi Y., Aoyagi Y.. Marked enhancement of 320-360nm ultraviolet emission in quaternary In_xA_yGa_1-x-yN with In-segregation effect, Appl. Phys. Lett., Vol. 80, pp. 207, 2002.
• Hirayama H., Ainoya M., Kinoshita A., Hirata A., Aoyagi Y.. Fabrication of a low-threading-dislocation-density Al_xGa_1-xN buffer on Sic using highly Si-doped Al_xGa_1-xN superlattices, Appl. Phys. Lett. , Vol. 80, pp. 2057, 2002.
• Hirayama H., Enomoto Y., Kinoshita A., Hirata A., Aoyagi Y.. Efficient 230-280nm emission from high-Al-content Al-GaN-based multiquantum wells, Appl. Phys. Lett., Vol. 80, pp. 37, 2002.
• J.P. Bird, A. Shailos, M. Elhassan, C. Prasad, K.M. Indledofer, L. Shifren, R. Akis, D.K. Ferry, L.-H. Lin, N. Aoki, Y. Ochiai, K. Ishibashi, Y. Aoyagi. Can Kondo-like behavior occur in open quantum dots?, Microelectronic Engineering, Vol. 63, pp. 277-286, 2002.
• Ishibashi K., Suzuki M., Ida T., Aoyagi Y.. Microwave response of quantum dots in single-wall carbon nanotubes, 10th JST Int. Symp. on Quantum Computing: Nano-Science & Technology for Implementation of Quantum Computers, Tokyo , Japan, 2002.
• 平山秀樹, 木下敦寛, 青柳克信. InAlGaN四元混晶を用いた300nm帯紫外高輝度LEDの開発, 応用物理, Vol. 71, pp. 204, 2002.
• 平山秀樹, 青柳克信. InAlGaN4元混晶を用いた300nm帯高輝度紫外LED, 月刊ﾃﾞｨｽﾌﾟﾚｲ, Vol. 7, No. 8, pp. 7, 2002.
• Suzuki M., Ishibashi K., Ida T., Aoyagi Y.. Formation of coupled quantum dots in carbon nanotubes for qubit application, 10th JST Int. Symp. on Quantum Computing: Nano-Science & Technology for Implementation of Quantum Computers, Tokyo Japan, 2002.
• Meguro T., Hida A., Suzuki M., Koguchi Y., Yuzawa T., Takai H., Yamamoto Y., Maeda K., Aoyagi.Y.. Raman spectroscopic study on highly charged ion irradiated HOPG surface, Int. Symp. on Manipulation of Atoms and Molecules by Electronic Excitations(IS-MAMEE), Tokyo, Japan, 2002.
• Nobuhide Yoneya, Kazuhito Tsukagoshi, Yoshinobu Aoyagi. Charge transfer control by gate voltage in crossed nanotube junction, Appl.Phys.Lett., Vol. 81, No. 12, pp. 2250-2252, 2002.
• K. Matsuda, T. Saiki, S. Nomura, M. Mihara, Y. Aoyagi. Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm, Appl.Phys.Lett., Vol. 81, No. 12, pp. 2291-2293, 2002.
• Nobuhide Yoneya, Kazuhito Tsukagoshi, Yoshinobu Aoyagi. Charge transfer control by gate voltage in crossed nanotube junction, Appl.Phys.Lett., Vol. 81, No. 12, pp. 2250-2252, 2002.
• Akane T. Sugioka K., Hammura K., Aoyagi Y., Midorikawa K., Obata K., Toyoda K., Nomura S.. GaN ablation etching by simultaneous irradiation with F2 laser and KrF excimer laser, J. Vac. Sci. Technol. B, Vol. 19, pp. 1388, 2001.
• Meguro T., Hida A., Suzuki M., Koguchi Y., Takai H., Yamatomo Y., Maeda K., Aoyagi Y.. Nanoscale modification of electronic state of graphite by highly charged Ar-ion irradiation, J. Vac. Sci. Technol. A, Vol. 19, pp. 2745, 2001.
• Ishii M., Tanaka Y., Komuro S., Morikawa T., Aoyagi Y., Ishikawa T.. X-ray-excited optical luminescence of impurity atom in semiconductor, J. Synchrotron Rad., Vol. 8, pp. 372, 2001.
• Ishii M., Komuro S., Morikawa T., Aoyagi Y.. Local structure analysis of an optically active center in Erdoped ZnO thin film, J. Appl. Phys., Vol. 89, pp. 3679, 2001.
• Ishibashi K., Suzuki M., Ida T., Aoyagi Y.. Formation of coupled quantum dots in single-wall carbon nanotubes, Appl. Phys. Lett., Vol. 79, pp. 1864, 2001.
• Ishii M., Tanaka Y., Komuro S., Morikawa T., Aoyagi Y., Ishikawa T.. X-ray-excited optical luminescence of erbium-doped semiconductor: Site selective X-ray absorption spectroscopy of an optically active atom, J. Electron Spectrosc. Relat. Phenom., Vol. 114/116, pp. 521, 2001.
• Kinoshita A., Hirayama H., Takahashi M., Hirata A., Aoyagi Y.. Simulation study on flow stability of low pressure MOVPE process for III-nitrides, Materials Research Soc. 2001 Fall Meet., Boston, USA, 2001.
• Yamabi T., Kinoshita A., Hirayama H., Ainoya M., Hirata A., Aoyagi Y.. Investigation of the optimum growth conditions of wide-bandgap InAlGaN quaternary for UV-LEDs, Materials Research Soc. 2001 Fall Meet., Boston, USA, 2001.
• Kinoshita A., Hirayama H., Ainoya M., Yamabi T., Hirat A., Aoyagi Y.. High efficiency UV-emission at 345nm from InAlGaN light-emitting diodes, Materials Research Soc. 2001 Fall Meet., Boston, USA, 2001.
• Yamanaka T., Hirayama H., Kinoshita A., Hiraoka K., Hirata A., Aoyagi Y.. Fabrication of p-n junction with Mg-doped wide band gap InAlGaN for application to UV-emitters, Materials Research Soc. 2001 Fall Meet., Boston, USA, 2001.
• Hirayama H., Kinoshita A., Ainoya M., Yamabi T., Yamanaka T., Hirata A., Aoyagi Y.. Comparison of optical properties of 340nm-band bright UV-LEDs between InAlGaN and AlGaN active region, Materials Research Soc. 2001 Fall Meet., Boston, USA, 2001.
• Takeuchi M., Tanaka S., Hirayama H., Aoyagi Y.. Characterization of low-dislocation-density GaN films fabricated by anti-surfactant mediated epitaxy, Materials Research Soc. 2001 Fall Meet., Boston, USA, 2001.
• Meguro T., Hida A., Suzuki M., Koguchi Y., Takai H., Yamamoto Y., Maeda K., Aoyagi Y.. Formation of nanoscale features on HOPG surface by highly-charged ion beam irradiation, 7th Int. Symp. on Advanced Physical Fields,(National Institute for Materials Science), Tsukuba, Japan, 2001.
• Suzuki M., Ishibashi K., Ida T., Aoyagi Y.. Transport properties of coupled quantum dots in carbon nanotubes under microwave irradiation, 5th Int. Symp. on New Phenomena in Mesoscopic Structures,(Japan Society for the Promotion of science), Hawaii, USA, 2001.
• Shiokawa T., Tsukakoshi K., Ishibashi K., Aoyagi Y.. Nanostructure construction in single-walled carbon nanotubes by AFM manipulation, 2001 Int. Microprocesses and Nanotechnology Conf.(MNC2001),(The Japan Society of Applied Physics), Matsue, Japan, 2001.
• Tukakoshi K., Kanda A., Yoneya N., Watanabe E., Ootuka Y., Aoyagi Y.. Nano-electronics in a multiwall carbon nanotube, 2001 Int. Microprocesses and Nanotechnology Conf. (MNC2001), (The Japan Society of Applied Physics), Matsue, Japan, 2001.
• Kanda A., Tsukakoshi K., Ootuka Y., Aoyagi Y.. Electric transport in multiwall carbon nanotubes, Tsukuba Symp. on Carbon Nanotube in Commemoration of the 10th Anniversary of Its Discovery,(NEC), Tsukuba, Japan, 2001.
• Hirayama H., Kinoshita A., Ainoya M., Yamabi T., Yamanaka T., Hirata A., Aoyagi Y.. 340nm bright UV-LEDs using quaternary InAlGaN active region, 28th Int. Symp. on Compound Semiconductors 2001(ISCS 2001), Tokyo, Japan, 2001.
• Tsukakoshi K., Yoneya N., Watanabe E., Aoyagi Y.. Nano-electronics in a multiwall carbon nanotube, Micro & Nano Engineering 2001(MNE2001), Grenoble, France, 2001.
• Yoneya N., Watanabe E, Tsukakoshi K., Aoyagi Y.. Nano-device formation in a multi-wall carbon nanotube, (SSDM2001),(The Japan Society of Applied Physics),Tokyo, Japan, 2001.
• Prasad C., Ferry D.K., Shailos A., Elhassan M., Bird J.P., Lin L., Aoki N., Ochiai Y., Ishibashi K., Aoyagi Y.. Variation of the energy-relaxation time temperature dependence with magnetic field, 12th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors(HCIS-12), Santa Fe, USA, 2001.
• Maemoto T., Kobayashi T., Karasaki T., Sasa S., Inoue M., Ishibashi K., Aoyagi Y.. Magnetotransport properties of InAs/AlGaSb open quantum dot structures, 12th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors(HCIS-12), Santa Fe, USA, 2001.
• Ishibashi K., Aoyagi Y.. Interaction of electromagnetic wave with coupled quantum dots, 12th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors(HCIS-12), Santa Fe, USA, 2001.
• Aoki N., Lin L., Oonishi D., Kida M., Ishibashi K., Aoyagi Y., Bird J.P., Ferry D.K., Oswald J., Ochiai Y.. A drastic change of the effective g-value in nanostructure system:Zeeman attenuator, 12th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors(HCIS-12), Santa Fe, USA, 2001.
• Tong X., Ohuchi S., Sato N., Tanikawa T., Nagao T., Matsuda I., Aoyagi Y., Hasegawa S.. Electronic structure of Ag-induced ■RT2(3x) ■RT2(3) and ■RT2(21x) ■RT2(21) superstructures on the Si(111) surface studied by angleresolved photoemission spectroscopy and scanning tunneling microscopy, Phys. Rev.B, Vol. 64, pp. 205316-1, 2001.
• Kanda A., Tsukagoshi K., Ootsuka Y., Aoyagi Y.. Observation of Coulomb blockade in a Ti/multiwall carbon nanotube/Ti structure, Nanonetwork Materials, pp. 265, 2001.
• Maya O., Nagata Y., Obara M. Aoyagi Y., Midorikawa K.. Design of an ultrahigh-gain Ni-like Kr soft X-ray laser by use of an optical-field-induced ionization-initiated transient collisional excitation scheme, Jpn. J. Appl.Phys., Vol. 40, pp. 153, 2001.
• Ishii M., Tanaka Y., Ishikawa T., Komuro S., Morikawa T., Aoyagi Y.. Site-selective x-ray absorption fine structure analysis of an optically active center in Er-doped semiconductor thin film using x-ray-excited optical luminescence, Appl. aphys. Lett., Vol. 78, pp. 183, 2001.
• Ida T., Ishibashi K., Tsukakoshi K., Aoyagi y.. Effect of microwave irradiation on carbon nanotube quantum dots, Proc. 25th Int. Conf. on the Physics of Semiconductors Osaka, Vol. 2000-9, pp. 1617, 2001.
• Ishibashi K., Aoyagi Y.. Single electron transport in quantum dots, RIKEN Rev, No. 33, pp. 32, 2001.
• Hirayama H., Kinoshita A., Aoyagi Y.. Growth and optical properties of III-nitride semiconductors for deep UV(230-350nm) light-emitting diodes(LEDs) and laser diodes(LDs), RIKEN Rev, No. 33, pp. 28, 2001.
• 平山秀樹, 木下敦寛, 相野谷誠, 山火孝義, 山中卓也, 平田彰, 青柳克信. InAlGaN4元混晶を用いた330-350nm帯高効率紫外LED, 信学技報, Vol. ED2001, CPM2001, No. 134, 87, pp. 49, 2001.
• 田中悟, 青柳克信. 原子レベルの表面構造制御による窒化物半導体の欠陥密度の低減, 応用物理, Vol. 70, pp. 542, 2001.
• Shailos A., Prasad C., Elhassan M., Bird J.P., Akis R., Ferry D.K., Lin L., Aoki N., Ochiai Y., Ishibashi K., Aoyagi Y.. Non-weak-localization signature in the average conductance of open quantum dot arrays, 14th Int. Conf. on the Electronic Properties of Two-Demensional Systems, Prague, Czech, 2001.
• Akane T., Sugioka K., Obata K., Nomura S., Hmmura K., Aoki N., Toyoda K., Aoyagi Y., Mikorikawa K.. GaN etching by simultaneous irradiation of KrF excimer laser and F₂ laser, (LASE 2001), (SPIE), San Jose, USA, Vol. 4274, pp. 133, 2001.
• Ozasa K., Nomura S., Aoyagi Y.. Pressure effects on nanoprobe photoluminescence of quasi-zero-dimensional confinement quantum dot, Superlattices Microstruct., Vol. 30, pp. 169, 2001.
• Elhassan M., Shailos A., Prasad C., Bird J. P., Ferry D. K., Lin L., Aoki N., Ochiai Y., Ishibashi K., Aoyagi Y.. Magneto-conductance oscillations in open dot arrays, Phys. Status Solidi B, Vol. 224, pp. 711, 2001.
• Hirayama H., Kinoshita A., Hirata A., Aoyagi Y.. Growth and optical properties of quaternary InAlGaN for 300mn-band UV-emitting devices, Phys. Status Solidi A, Vol. 188, pp. 83, 2001.
• Shailos A., Prasad C., Elhassan M., Akis R., Ferry D. K., Bird J. P., Aoki N., Lin L., Ochiai Y., Ishibashi K., Aoyagi Y.. Signature of discrete level spectrum in temperature-dependent transport through open quantum-dot arrays, Phys. Rev. B, Vol. 64, pp. 193302-1, 2001.
• Elhassan M., Bird J. P., Shailos A., Prasad C., Akis R., Ferry D. K., Takagaki Y., Lin L. Aoki N., Ochiai Y., Ishibashi K., Aoyagi Y.. Coupling-driven transition from multiple to single-dot interference in open quantum-dot arrays, Phys. Rev. B, Vol. 64, pp. 085325-1, 2001.
• Akane T., Sugioka K., Hammura K., Aoyagi Y., Midorikawa K., Obata K., Toyoda K., Nomura S.. GaN ablation etching by simultaneous irradiation with F₂ laser and KrF excimer laser, J. Vac. Sci. Technol. B, Vol. 19, pp. 1388, 2001.
• Shailos A., Bird J. P., Prasad C., Elhassan M., Shifren L., Ferry D. K., Lin L., Aoki N., Ochiai Y., Ishibashi K., Aoyagi Y.. Confinement-induced enhancement of electron-electron interactions in open quantum-dot arrays, Phys. Rev. B, Vol. 63, pp. 241302_1, 2001.
• Nomura S., Nakanishi T., Aoyagi Y.. Fermi-edge singularities in photoluminescence spectra of n-type modulation-doped quantum wells with a lateral periodic potential, Phys. Rev. B, Vol. 63, pp. 165330_1, 2001.
• Ozasa K., Nomura S., Takeuchi M., Aoyagi Y.. Photoluminescence of InGaAs(P) dots with quasi-zero-dimensional confinement, Mater. Sci. Eng. B, Vol. 86, pp. 34, 2001.
• Meguro T., Hida A., Suzuki M., Koguchi Y., Takai H., Yamamoto Y., Maeda K., Aoyagi Y.. Creation of nanodiamonds by the single impacts of highly charged ions upon graphite, Appl. Phys. Lett., Vol. 79, pp. 3866, 2001.
• H.Hirayama, A.Kinoshita, T.Yamanaka, A.Hirata, Y.Aoyagi. Drastic reduction of threading dislocation density of AlGaN on SiC wafer by using highly-Si-incorporated AlGaN superlattice, MRS GaN and Related Alloys-2000, Vol. 639, pp. G2.8, 2001.
• A.Kinoshita, H.Hideki, M.Ainoya, T.Yamabi, A.Hirata, Y.Aoyagi. In segregation effects on optical and doping properties of InAlGaN quaternary for UV emitting devices, MAS GaN and Related Alloys-2000, Vol. 639, pp. G2.8, 2001.
• A.Kinoshita, H.Hideki, M.AinoyaT.Yamabi, A.Hirata, Y.Aoyagi. Current injection UV-emission from InAlGaN multi-quantum-well light emitting diodes, MRS GaN and Related Alloys-2000, Vol. 639, pp. G12.6, 2001.
• K. Kawasaki, D. Yamazaki, A. Kinoshita, H. Hirayama, K. Tsutsui, Y. Aoyagi. GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors, Applied Physics Letters, Vol. 79, No. 14, pp. 2243, 2001.
• Kanda A., Tsukakoshi K., Ootuka Y., Aoyagi Y.. Barrier formation in electrical contacts between metal and multi-wall carbon nanotube, Int. Wordshop on the Science and Application of Nanotubes (NT01), Potsdam, Germany, 2001.
• Takeuchi M., Hirayama H., Aoyagi Y.. Direct growth og GaN layers on 6H-SiC(0001) substrates by the concept of the nucleation density control, 4th Int. Conf. on Nitride Semiconductors (ICNS-4),(Materials Research Society), Denver, USA, 2001.
• Aoki K., Miyazaki H.T., Hirayama H., Inoshita K., Baba T., Shintani N., Aoyagi Y.. Fabrication of 3D photonic crystal from 2D photonic plates by micromanipulation, 4th Pacific Rim Conf. on Lasers and Electro-Optics(CLEO/Pacific Rim 2001),(The Japan Society Applied Physics and others), Makuhari, Japan, 2001.
• Hirayama H., Kinoshita A., Aoyagi Y.. Growth and optical properties of InAlGaN for 300nm-band UV-emitting devices, 4th Int. Conf. on Nitride semiconductors (ICNS-4),(Materials Research Society), Denver, USA, 2001.
• Matsuda K., Saiki T., Saitou H., Nishi K., Nomura S., Aoyagi Y.. Optical near-field spectroscopy of semiconductor nano-structures, 4th Pacific Rim Conf. on Lasers and Electro-Optics(CLEO/Pacific Rim 2001),(The Japan Society Applied Physics and others), Makuhari, Japan, 2001.
• Akane T., Sugioka K., Nomura S., Hammura K., Obata K., Aoki N., Toyoda K., Aoyagi Y., Midorikawa K.. GaN etching by simultaneous irradiation of KrF excimer laser and F₂ laser, LASE 2001, SPIE, Sun Jose, USA, 2001.
• Aoki K., Hirayama H., Aoyagi Y.. New fabrication technique for 3D photonic crystals, 5th RIKEN Int. Conf. on Coherent Control in Matter, Shonan, 2001.
• Suzuki M., Ishibashi K., Ida T., Aoyagi Y.. Fabrication of single and coupled quantum dots in single-wall carbon nanotubes, 45th Int. Conf. on Electron,Ion and Photon Beam Technology and Nanofabrication(The American Vacuum Society),Washington D.C., USA, 2001.
• Meguro T., Hida A., Suzuki M., Koguchi Y., Takai H., Yamamoto Y., Maeda K., Aoyagi Y.. Nanoscale modification of electronic state of graphite by highly charged Ar ion irradiation, 45th Int. Conf. on Electron, Ion and Photon Beam Technology and Nanofabrication,(The American Vacuum Society), Washington D.C., USA, 2001.
• Aoki K., Miyazaki H., Hirayama H., Inoshita K., Baba T., Shintani N., Aoyagi Y.. Fabrication of three-dimensional photonic crystals by micromanipulation method, EURESCO,St. Andrews, UK, 2001.
• Aoki K., Miyazaki H., Hirayama H., Inoshita K., Baba T. Shintani N., Aoyagi Y.. A novel fabrication technique for three-dimensional semiconductor photonic crystals, EMS20,Nara,Japan, 2001.
• Ishibashi K., Suzuki M., Ida T., Aoyagi Y.. Coupled quantum dots in single-wall carbon nanotubes, MSS10, Linz, Austria, 2001.
• Aoki N., Lin L., Ochiai Y., Ishibashi K., Aoyagi Y., Bird J.P., Ferry D.K., Oswald J.. Magneto-conductance in dot array system at high-magnetic fields, MSS10,Linz, Austria, 2001.
• Ozasa K., Aoyagi Y.. Photoluminescence of quasi-zero-dimensional InGaAsP quantum dot, MSS10, Linz, Austria, 2001.
• Yoshinobu Aoyagi, Satoru Tanaka, Hekide Hirayama, Misaichi Takeuchi. Quantum dot formation and crystal growth using an atomic nano-mask, Physica E, Vol. 11, pp. 89-93, 2001.
• Ishibashi K., Suzuki M., Tsuya D., Toratani K., Ida T., Moriyama S., Aoyagi Y.. Formation and electrical transport of single and coupled quantum dots in carbon nanotubes, 1st Int. Workshop on Quantum Nonplanar Nanostructures and Nanoelectronics '01(CREST,JST), Tsukuaba, Japan, 2001.
• Nomura S., Matsuda K., Saiki T., Aoyagi Y.. Spatially resolved photoluminescencen in n-type modulation-doped lateral quantum dot arrays, 1st Int. Workshop on Quantum Nonplanar Nanostructures and Nanoelectronics '01(CREST,JST), Tsukaba, Japan, 2001.
• Avramescu A.S., Tanaka S., Hirayama H., Aoyagi Y.. Growth of AlN-SiC solid solutions by sequential supply epitaxy, 13th Int. Conf. on crystal Growth(ICCG-13/ICVGE-11), Kyoto, Japan, 2001.
• Akis R., Elhassan M., Bird J.P., Shailos A., Prasad C., Ferry D.K., Lin L., Aoki N., Ochiai Y., Ishibashi K., Aoyagi Y.. Molecular states in quantum-dot arrays, 14th Int. Conf. on the Electronic Properties of Two-Dimensional Systems, Prague, Czech, 2001.
• Wang T. H., Aoyagi Y.. Single-electron charging in a parallel dot sturcture, Appl. Phys. Lett., Vol. 78, pp. 634, 2001.
• Kuball M., Gleize J., Tanaka S., Aoyagi Y.. Resonant raman scattering on self-assembled GaN quantum dots, Appl. Phys. Lett., Vol. 78, pp. 987, 2001.
• Yamada S., Kato J., Tanaka S., Suemune I., Avramescu A.S., Aoyagi Y., Teraguchi N., Suzuki A.. Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces, Appl. Phys. Lett., Vol. 78, pp. 3612, 2001.
• Kanda A., Ootuka Y., Tsukakoshi K., Aoyagi Y.. Electron transport in metal/multiwall carbon nanotube/metal structures (metal=Ti or Pt/Au), Appl. Phys. Lett., Vol. 79, pp. 1354, 2001.
• Ochiai Y., Aoki N., Lin L., Andressen A., Prasad C., Ge F., Bird J. P., Ferry D. K., Risaki T., Ishibashi K., Aoyagi Y., Sugano T.. Beating of Shubnikov-de Haas oscillations in GaAs/AlGaAs quantum-dot arrays, Jpn. J. Appl. Phys., Vol. 40, pp. 1990, 2001.
• Suzuki M., Ishibashi K., Ida T., Aoyagi Y.. Quantum dot formation in single-wall carbon nanotubes, Jpn. J. Appl. Phys., Vol. 40, pp. 1915, 2001.
• Yoneya N., Watanabe E., Tsukakoshi K., Aoyagi Y.. Coulomb blockade in multiwalled carbon nanotube island with nanotube leads, Appl. Phys. Lett., Vol. 79, pp. 1465, 2001.
• Suzuki M., Ishibashi K., Ida T., Tsuya D., Toratani K., Aoyagi Y.. Fabrication of single and coupled quantum dots in single-wall carbon nanotubes, J. Vac. Sci. Technol. B, Vol. 19, pp. 2770, 2001.
• S.Komuro, T.Katsumata, T.Morikawa, X.W.Zhao, H.Isshiki, Y.Aoyagi. Highly erbium-doped zinc-oxide thin film prepared by laser ablation and its 1.54 μm emission dynamics, J.Appl.Phys, Vol. 88, pp. 7129, 2000.
• P. Ramvall, P. R. Riblet, S. Nomura, Y. Aoyagi. Optical properties of GaN quantum dots, J. Appl. Phys, Vol. 87, pp. 3883, 2000.
• S.Nomura, T.Sugano, Y.Aoyagi. Bias Voltage-dependent photoluminescence near Fermi level in n-type modulation doped quantum dot, Physica E, Vol. 6, pp. 432, 2000.
• A.Andresen, C.Prasad, F.Ge, L.H.Lin, N.Aoki, K.Nakao, J.P.Bird, D.K.Ferry, Y.Ochiai, K.Ishibashi, T.Sugano, Y.Aoyagi. Evidence for a reentrant metal-insulator transition in quantum-dot arrays, Phys.Rev.B, Vol. 160, No. 23, pp. 16050, 2000.
• X.Q.Shen, P.Ramvall, P.Riblet, Y.Aoyagi, K.Hoshi, S.Tanak, I.Suemune. Investigations of optical and electrical properties of In-doped GaN films by gas-source molecular beam epitaxy, J.Cryst.Growth, Vol. 209, pp. 396, 2000.
• X.Zhao, s.Komuro, H.Isshiki, Y.Aoyagi, T.Sugano. Fabrication and optical transition dynamics of Er-doped ZnO thin films formed on Si substrates, J.Luminescence, Vol. 87, pp. 1254, 2000.
• A.Kinoshita, H.Hirayama, P.Riblet, M.Ainoya, A.Hirata, Y.Aoyagi. Emission enhancement of GaN/AlGaN single-quantum-wells due to screening of piezoelectric field, Mater.Res.Soc.,GaN and Related Aoolys, Vol. 32, 2000.
• H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi. Optical properties of AlGaN quantum well structures, Mater.Res.Soc.,GaN and Related Alloys, Vol. 35, 2000.
• X.Zhao, H.Isshiki, Y.Aoyagi, T.Sugano, S.Komuro. Formation and device application of Er-doped nanocrystalline Si using laser ablation, Mat.Sci.Eng., Vol. B74, pp. 197, 2000.
• A.P.Micolich, R.P.Taylor, J.P.Bird, R.Newbury, T.M.Fromhold, C.R.Tench, H.Linke, Y.Aoyagi, T.Sugano. Temperature and size dependence of fractal MCF in semiconductor billiards, Microelec.Eng., Vol. 51, pp. 241, 2000.
• JP.Bird A.Shailos, M.Elhassan, C.Prasad, D.K.Ferry, L.-H.Lin, N.Aoki, Y.Ochiai, K.Ishibashi, Y.Aoyagi. Signature of coherent electron transport open dot arrays, Nanotechnology, Vol. 11, pp. 365, 2000.
• S.Nomura, T.Sugano, Y.Aoyagi. Temperature dependence of photoluminescence spectrain n-type modulation-doped quantum dot arrays, Physica E., Vol. 7, pp. 466, 2000.
• L.H.Lin, N.Aoki, K.Nakao, K.Ishibashi, Y.Aoyagi, T.Sugano, N.Holmberg, D.Vasileska, R.Akis, JP.Rird, D.K.Ferry, Y.Ochiai. Magneto-transport in corrugated quantum wires, Physica E, Vol. 7, pp. 750, 2000.
• Y.Kurokawa, s.Nomura, t.Takemori, Y.Aoyagi. Fast algorithm for calculating two-photon absorption spectra by real-time real-space higher-order finite-difference method, Prog.of Theoretical Physics suppl., Vol. 138, pp. 145, 2000.
• P.Ramvall, Y.Aoyagi, A.Kuramata, P.Hacke, K.Domen, K.Horino. Doping-dependent optical gain in GaN, Appl.Phys.Lett., Vol. 76, pp. 2994, 2000.
• S.Komuro, T.Katsumata, T.Morikawa, X.Zhao, H.Isshiki, Y.Aoyagi. 1.54μm emission dynamics of erbium-doped zinc-oxide thin films, Appl.Phys.Lett., Vol. 76, pp. 3935, 2000.
• Y.Kurokawa, S.Nomura, T.Takemori, Y.Aoyagi. Electronic properties of polysilane calculated with the real-time real-space higher-oerder finite-difference method, Prog.of Theoretical Physics Suppl., Vol. 138, pp. 147, 2000.
• Y.Kurokawa, S.Nomura, T.Takemori, Y.Aoyagi. Calculation of linear/non-linear optical response function of large quantum systems by real-time real-space higher-order finite-difference method, RIKEN Rev., Vol. 29, pp. 29, 2000.
• X.Tong, T.Shiokawa, K.Hammura, Y.Aoyagi. Scanning tunneling microscopy evidence of a special bounding of Cu adatoms on Si(111)-3x3-Ag surface Diect observbation of surface-state electron migration, Surf.Sci., Vol. 446, pp. 120, 2000.
• K.Ishibashi, T.Ida, M.Suzuki, K.Tsukagoshi, Y.Aoyagi. Quantum dots in carbon nanotubes, Jpn.J.Appl.Phys., Vol. 39, pp. 7053, 2000.
• H.Hirayama, K.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi. 230-250 nm intense emission from AIN/AlGaN quantum wells, Phys.Status Solidi(a), Vol. 180, pp. 157, 2000.
• A.Kinoshita, H.Hideki, J.S.Kim, M.Ainoya, A.Hirata, Y.Aoyagi. Current injection emission at 333nm from Al 0.03Ga 0.97N/Al 0.25 Ga 0.75 N multi quantum well ultraviolet light emitting diodes, Phys. Status Solidi(a), Vol. 180, pp. 397, 2000.
• A.Kinoshita, H.Hirayama, M.Ainoya, A.Hirata, Y.Aoyagi. Room-temperature operation at 333nm of Al 0.03 Ga 0.97 N/Al 0.25 Ga 0.75N quantum-well light-emitting diodew with Mgdoped superlattice layers, Appl.Phys.Lett., Vol. 77, pp. 175, 2000.
• Y.Kurokawa, S.Nomura, T.Takemori, Y.Aoyagi. Fast algorithm for calculating two-photon absorption spectra by real-time real-space higher-order finite-difference method, Prog.of Theoretical Physics Suppl., Vol. 138, pp. 145, 2000.
• Y.Kurokawa, S.Nomura, T.Takemori, Y.Aoyagi. Electronic properties of polysilane calculated with the real-time real-space higher-order finite-difference method, Prog.of Theoretical Physics Suppl., Vol. 138, pp. 147, 2000.
• Suzuki M., Ishibashi K., Ida T., Tsukakoshi K., Aoyagi Y.. Quantum dot formation in single-wall carbon nanotubes, QDS 2000, 2000.
• X.Tong, T.Shiokawa, K.Hammura, yoshinobu aoyagi. Scanning tunneling microscopy evidence of a special bonding of Cu adatoms on Si(111)-3 x 3-Ag surface direct observation of surface state electron migration, Surface Science Letter, Vol. 446, pp. 120, 2000.
• F.Ge, C.Prasad, A.Anressen, J.P.Bird D.K.Ferr, L.H.Lin, N.Aoki, K.Nakao, Y.Ochiai, K.Ishibashi, yoshinobu aoyagi. Insulating state in open quantum dots and quantum dot arrays, Ann Phys, Vol. 9, No. 1, pp. 65, 2000.
• T.Kawachi, K.Ando, C.Fujikawa, H.Oyama, N.Yamaguhi, T.Hara, Y.Aoyagi. Observation of excited level populations of Li-like aluminum ions in recombining plasma:Role of atomic processes involving doubly excited levels of Be-like ions, J.Phys.B:At.Mol.Opt.Phys., Vol. 32, pp. 553, 1999.
• A.Kanda, M.C.Geisler, K.Ishibashi, Y.Aoyagi, T.Sugano. Energy gap measurementin ultrasmall superconducting rings, Microelectron>Eng., Vol. 47, pp. 389, 1999.
• H.Hirayama, Y.Aoyagi, s.Tanaka. Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant, MRS Internet J.Nitride Semicond. Res., Vol. 4A1, pp. G9.4, 1999.
• H.Hirayama, Y.Aoyagi. Optical properties of Si-doped AlxGal-xN/AlyGal-yN(x=0.24-0.53,y=0.11)multi-quantum structures, MRS Internet J.Nitride Semicond.Res., Vol. 4S1, pp. G3.74, 1999.
• M.Kanda, K.Ishibashi, Y.Aoyagi, T.sugano. Single electron tunneling devices, Phys.and Appl. of Mesoscopic Josephson Junctions, pp. 305, 1999.
• M.Kanda, K.Ishibashi, Y.Aoyagi. Single electron tunneling devices, Phys.and Appl.of Mesoscopic Josephson Junctions, pp. 305, 1999.
• O.Maya, Y.Nagata, M.Obara, Y.Aoyagi, M.Midorikawa. Ultra-high gain Ni-like Kr soft x-ray laser by optical field ionization initiated transient collisional excitation scheme, Proc.SPIE-Int.Soc.Opt.Eng., Vol. 3776, pp. 143, 1999.
• S.Nomura, T.Iitaka, X.Zhao, T.Sugano, Y.Aoyagi. Quantum sizi effect in model nanocrystalline/amorphous mixed-phase silicon structures, Phys.Rev.B, Vol. 59, No. 15, pp. 10309, 1999.
• H.Hirayama, S.Tanaka, Y.Aoyagi. Fabrication of self-assembling InGaN and A1GaN quantum dots on A1Gan surfaces using anti-surfactant, Micro.Eng, No. 47, pp. 251, 1999.
• J.P. Bird, R. Akis, D. K. Ferry, D. Vasileska, J. Cooper, T. Sugano, Y.Aoyagi. Lead-orientation-dependent wave function scarring in open quantum dots, Phys. Rev. Lett, Vol. 82, pp. 4691, 1999.
• Ida T., Ishibashi K., Tsukagoshi K., Alphenaar B.W., Aoyagi Y.. Quantum-dot transport in carbon nanotubes, Surfaces and Interfaces of Mesoscopic Devices (Hawaii, USA), 1999.
• H.Kumano, K.Hoshi, S.Tanaka, I.Suemune, X.Q.Shen, P.Riblet, P.Ramvall, Y.Aoyagi. Effect of Indium doping on the transient optical properties of GaN films, Appl.Phys.Lett, Vol. 75, No. 19, pp. 2879, 1999.
• JP.Bird, R.Akis, D.K.Ferry, J.Cooper, Y.Aoyagi, T.Sugano. Probing the discrete level spectrum of open quantum dots, Jpn.J.Appl.Phys., Vol. 38, pp. 322, 1999.
• T. Aono, K. Ishibashi, Y. Aoyagi. Phenomelogical theory of the Rabi oscillation in coupled quantum dots, Physica B, Vol. 272, pp. 39, 1999.
• X.Zhao, S.Komuro, H.Ishiki, Y.Aoyagi, T.Sugano. Photoluminescence and optical transition dynamics of Er3＋ions in porous Si, J.Mater.Sci.Technol., Vol. 15, pp. 357, 1999.
• L-H.Lin, N.Aoki, K.Nakao, A.Andresen, C.Prasad, F.Ge, JP.Bird, D.K.Ferry, Y.Ochiai, K.Ishibashi, Y.Aoyagi, T.Sugano. Hot carrier scaling of localization in a quantum ot array, Physica, Vol. 272, pp. 49, 1999.
• S.Nomura, T.Iitaka, X.Zhao, T.Sugano, Y.Aoyagi. Novel quantum size effect in model nanocrystalline/amorphous mixed-phase silicon sstructures revealed by a linear scaling calculation, RIKEN Rev., No. 25, pp. 47, 1999.
• H.Hirayama, A.Kinoshita, A.Hirata, T.Sugano, Y.Aoyagi. Determination of photoluminescence mechanism in InGaN quantum wells, Appl.Phys.Lett, Vol. 75, No. 15, pp. 2241, 1999.
• AP.Micolich, AP.Taylor, R.Newbury, JP.Bird, Y.Aoyagi, T.Sugano. Temperature dependent fractal dimension of magneto-conductance fluctuations in semiconductor billiards, Superl.Microstr., Vol. 25, pp. 157, 1999.
• T.Maemoto, M.Ichiu, A.Ohya, S.Sasa, M.Inoue, K.Ishibashi, Y.Aoyagi. Magnetotransport in an InAs/AlGaSb quantum wire with a weak periodic potential, Physica, Vol. 272, pp. 110, 1999.
• Y.Kurokawa, S.Nomura, T.Takemura, Y.Aoyagi. Fast algorithm for calculating two-photon absorption spectra, Phys.Rev.E, Vol. 59, No. 3, pp. 3694, 1999.
• M.Ishii, T.Ishikawa, T.Ueki, S.Komuro, T.Morikawa, H.Oyanagi, Y.Aoyagi. The optically active center and its activation profession Er-doped Si thin film produced by laser ablation, J.Appl.Phys, Vol. 85, No. 8, pp. 4024, 1999.
• S.Komuro, T.Katsumata, T.Morikawa, X.Zhao, H.Isshiki, Y.Aoyagi. Time response of 1.54mm emission from highly Er-Doped Nanocrystalline Si thin films prepared by laser ablation, Appl.Phys.Lett, Vol. 74, No. 3, pp. 377, 1999.
• X.Q.Shen, P.Ramvall, P.Riblet, Y.Aoyagi. Improvements of the optical and electrical properties of GaN films by using In-doping method during growth, Jpn.J.Appl.Phys, Vol. 38, No. 4B, pp. L411, 1999.
• P.Ramvall, A.Kuramata, P.Hacke, K.Horino, Y.Aoyagi. Influence of a piezoelectric field on the electron distribution in a double GaN/A10.14GA0.86N heterojunction, Appl.Phys.Lett, Vol. 74, No. 25, pp. 3866, 1999.
• K.Ozasa, Y.Aoyagi. In situ control of strain-induced dot structure by arsenic/phosphorus replacement, J.Elec.Mat, Vol. 28, No. 5, pp. 437, 1999.
• P.Riblet, S.Tanaka, P.Ramvall, S.Nomura, Y.Aoyagi. Size-dependent optical nonlinearities in GaN quantum dots, Solid State commun, Vol. 109, pp. 377, 1999.
• T.Aono, K.Ishibashi, Y.Aoyagi. Phenomenological theory of the Rabi oscillation in coupled quantum dots, Physica B, Vol. 272, pp. 39, 1999.
• L.H.Lin, Y.Ochiai, K.Ishibashi, T.Sugano, J.P.Bird, N.L.Holmberg, D.Vasileska, R.Akis, D.K.Ferry, Y.Aoyagi. Focused multi-peaks in gated ballistic wires, Micro.Eng, Vol. 47, pp. 155, 1999.
• K.ishibashi, T.Ida, H.Kotani, Y.Ochiai, T.Sugano, Y.Aoyagi. Characterization of SET electrometer coupled to the quantum dot in Gas/A1GaAs 2DEG, Micro Eng, Vol. 47, pp. 185, 1999.
• A.Kanda, M.C.Geisler, K.Ishibashi, T.Sugano, Y.Aoyagi. Energy gap measurement in ultra small superconducting rings, Microelectronic.Eng, Vol. 47, pp. 389, 1999.
• L.H.Lin, N.Aoki, K.Nakao, A.Anresen, C.Parasad, F.Ge, J.P.Bird, D.K.Ferry, Y.Ochiai, K.Ishibashi, T.Sugano, Y.Aoyagi. Localization effect in mesoscopic quantum dots and quantum-dot arrays, Phys. Phys.Rev.B, Vol. 60, No. 24, pp. 16229, 1999.
• Y.Ochiai, H.L.Lin, K.Ishibashi, T.Sugano, N.L.Holmberg, J.P.Bird, D.Vasileska, R.Akis, D.K.Ferry, Y.Aoyagi. Modeling of electron transport in corrugated quantum wires, Jpn.J.Appl.Phys, Vol. 38, No. 1B, pp. 325, 1999.
• M.Ishii, S.Komuro, T.Morikawa, Oyanagi, T.Ishikawa, T.Ueki, Y.Aoyagi. The optical active center of Er-doped Si produced by laser ablation, J.Synchrotron Rad, Vol. 6, pp. 477, 1999.
• M.Ishii, S.Komuro, T.Morikawa, T.Ishikawa, T.Ueki, Y.Aoyagi. XAFES analysis of optical activation process of Er in SiEr2O3 thin film: Electronic and structural modifications around Er, Jpn.J.Appl.Phys, Vol. 38, pp. 191, 1999.
• P.Hacke, P.Ramvall, S.Tanaka, Y.Aoyagi, A.Kuramata, K.Horino, H.Munekata. Optical characterization of the E2 deep level in GaN, Appl.Phys.Lett., Vol. 74, pp. 543, 1999.
• P.Riblet, H.Hirayama, A.Kinoshita, A.Hirata, T.Sugano, Y.Aoyagi. Determination of photoluminescence mechanism in InGaN quantum wells, Appl.Phys.Lett., Vol. 75, pp. 2241, 1999.
• P.Ramsall, P.Hacke, Y.Aoyagi. Gating properties of AlN capped A10.14Ga0.86N/GaN heterojunctions, Inst.Phys.Conf.Ser., No. 162, pp. 729, 1999.
• X.Q.Shen, Y.Aoyagi. An approach to achieve intense photoluminescence of GaN, Jpn.J.Appl.Phys., Vol. 38, pp. L14, 1999.
• X.Zhao, S.Komuro, H.Isshiki, Y.Aoyagi, T.Sugano. Photoluminescence and optical transition dynamics of Er3＋ions in porous Si, J.Mater.sci.Technol., Vol. 15, pp. 357, 1999.
• P.Vledder, A.V.Akimov, J.I.Dijkhuis, J.Kusano, Y.Aoyagi, T.Sugano. Dynamics of superradiant excitons in GaAs single quantum wells, J.Lumines., Vol. 83, pp. 309, 1999.
• 青柳克信. ｺﾋｰﾚﾝﾄ科学, ﾚｰｻﾞｰ研究, Vol. 26, pp. 513, 1998.
• 田中悟, ランバル・ピーター, 野村晋太郎, 平山秀夫, 青柳克信. GaN量子ﾄﾞｯﾄの成長機構とその光学特性, 電子情報通信学会論文誌, Vol. J81-C-II, pp. 72, 1998.
• 田中　悟, ﾗﾝﾊﾞﾙ・ﾋﾟｰﾀｰ, 野村晋太郎, 平山秀夫, 青柳克信. GaN量子ﾄﾞｯﾄの成長機構とその光学特性, 電子情報通信学会論文誌, Vol. J81-C-??, pp. 72, 1998.
• 青柳克信. ｺﾋｰﾚﾝﾄ科学, ﾚｰｻﾞｰ研究, Vol. 26, pp. 513, 1998.
• S.Nomura, T.Iitaka, X.Zhao, T.Sugano, Y.Aoyagi. Optical absorption spectra of large silicon nanocrystallites, RIKEN Rev., No. 19, pp. 118, 1998.
• H.Hirayama, Y.Aoyagi. Analysisi of resonant properties of micro ring lasers consisting of 2-dimensional photonic bandgap crystal, RIKEN Rev., No. 19, pp. 112, 1998.
• K.Ozasa, Y.Aoyagi. In situ morphological change of strain-induced dot structure, RIKEN Rev., Vol. 17, pp. 7, 1998.
• S.Nomura, T.Iitaka, X.Zhao, T.Sugano, Y.Aoyagi. Optical absorption spectra of hydrogenated silicon nanocrystallites calculated by a real-space real-time method, RIKEN Rev., Vol. 17, pp. 9, 1998.
• X.Zhao, S.Nomura, Y.Aoyagi, T.Sugano. Size-dependent blue light emission from silicon nanocrystallites, RIKEN.Rev., Vol. 17, pp. 11, 1998.
• T.Iitaka, S.Nomura, X.Zhao, Y.Aoyagi, T.Sugano. Order(N) algorithms for linear-response functions, RIKEN.Rev., Vol. 17, pp. 13, 1998.
• A.Kanda, M.C.Geisler, K.Ishibahi, Y.Aoyagi, T.Sugano. Charging and interference effects in the superconducting SET transistor with ring-shaped island, RIKEN.Rev., Vol. 18, pp. 15, 1998.
• Y.Ochiai, K.Yamamoto, JP.Bird, K.Ishibashi, Y.Aoyagi, T.Sugano, R.Akis, K.K.Ferry. Wavefunction scarring and classical commensurability in corrugated quatum wires, Solid State Elec., Vol. 42, pp. 1125, 1998.
• JP.Bird, AP.Micolich, D.K.Ferry, R.Akis, Y.Ochiai, Y.Aoyagi, T.Sugano. The influence of environmental coupling on phase breaking in open quantum dots, Solid State Elec., Vol. 42, pp. 1281, 1998.
• M.Ishii, S.Iwai, T.Ueki, Y.Aoyagi. Surface reaction mechanism and morphology controlin AIP atomic layer epitaxy, Thin Sol.Films, Vol. 318, pp. 234, 1998.
• M.Ishii, s.Iwai, T.Ueki, Y.Aoyagi. Metalorganic vapor phase epitaxy of manganese gallide thin films and growth temperature dependence of its crystal structure, J.Crystal Growht, Vol. 187, pp. 234, 1998.
• X.Ahao, S.Nomura, Y.Aoyagi, T.Sugano. Size-dependent blue light emission from silicon nanocrystallites, RIKEN Rev., No. 17, pp. 11, 1998.
• S.Nomura, T.Iitaka, X.Zhao, T.Sugano, Y.Aoyagi. Optical absorption spectra of hydrogenated silicon nanocrystallites calculated by a real-space real-time method, RIKEN Rev., No. 17, pp. 9, 1998.
• 田中　悟, 青柳克信. GaN系半導体の自己形成量子ﾄﾞｯﾄ, 応用物理, Vol. 67, pp. 828, 1998.
• K.Ozasa, Y.Aoyagi. In situ morphological change of strain-induced dot structure, RIKEN Rev., No. 17, pp. 7, 1998.
• 田中悟, 青柳克信. GaN系半導体の自己形成量子ﾄﾞｯﾄ, 応用物理, Vol. 67, pp. 828, 1998.
• 田中　悟, 平山秀樹, 岩井荘八, 青柳克信. GaN量子ﾄﾞｯﾄの作製とﾚｰｻﾞｰへの応用, Technical Report of IEICE, Vol. OPE98,LQE96, pp. 19, 1997.
• 飯高敏晃, 野村晋太郎, 平山秀樹, 趙新為, 青柳克信, 菅野卓雄. 「数値量子ﾀﾞｲﾅﾐｸｽ」による線形応答関数のｵｰﾀﾞｰN計算法, 物性研だより, Vol. 37, No. 3, pp. 57, 1997.
• 一色秀夫, 棚谷公彦, 高橋雅也, 木村忠正, 青柳克信, 菅野卓雄. 原子層成長による原子層ﾌﾗｸﾀﾙ超格子の作製と評価, Technical Report of IEICE, Vol. LQE97-20, pp. 13, 1997.
• D.K.Ferry, R.Akis, Jr.DP.Pivin, K.M.Connolly, JP.Bird, K.Ishibashi, Y.Aoyagi, T.Sugano, Y.Ochiai. Electron transport in a quasi-ballistic narrow wires confined by split metal gates, 12th Int.Conf. on High Magnetic Field in Semiconductors ??,ed.by G.Landwehr and W.Ossau,World Scientific, Singapore, Vol. 1, pp. 299, 1997.
• S.Tanaka, H.Hirayama, S.Iwai, Y.Aoyagi. GaN quantum dots in AlxGa1-xN confined layer structures, Mat.Res.Soc.Symp.Proc., Vol. 449, pp. 135, 1997.
• 趙新為, 青柳克信, 菅野卓雄. Si ﾅﾉ微結晶のｻｲｽﾞ制御と青色発光, 超微粒子とｸﾗｽﾀｰ懇談会第1回研究会講演予稿集, pp. 151, 1997.
• S.Nomura, Y.Segawa, K.Misawa, T.Kobayashi, X.Zhao, Y.Aoyagi, T.Sugano. Optical properties of semiconductor quantum dots in magnetic fields, J.Luminescence, Vol. 70, pp. 144, 1996.
• S.Tanaka, S.Iwai, Y.Aoyagi. Self-assembling GaN quantum dots on Al_xGa_1-xN surfaces using a surfactant, Applied Physics Letters, Vol. 69, pp. 4096, 1996.
• Y.Ochiai, A.Wahju, A.Widjaja, N.Sasaki, K.Yamamoto, K.Ishibashi, JP.Bird, Y.Aoyagi, T._sugano, K.K.Ferry. Low temperature magnetoresistance in corrugation gated wires, Czech.J.Phys., Vol. 46, pp. 2347, 1996.
• S.Komuro, T.Kato, T.K.Morikawa, P.O'Keeffe, Y.Aoyagi. Direct observation of oxygen-induced luminescent states in porous silicon by tunable excitation time-resolved spectroscopy, Appl.Phys.Lett., Vol. 68, pp. 949, 1996.
• Y.Ochiai, K.Yamamoto, K.Ishibashi, JP.Bird, Y.Aoyagi, T.Sugano, D.K.Ferry. Carrier scattering processes in quantum wires at high magnetic fields by correlation field analysis, Physica B, Vol. 216, pp. 376, 1996.
• H.Hirayama, T.Hamano, Y.Aoyagi. Novel surface emitting laser diode using photonic band-gap crystal cavity, Appl.Phys.Lett., Vol. 69, pp. 791, 1996.
• S.Komuro, SMaruyama, T.Morikawa, X.Zhao, H.Isshiki, Y.Aoyagi. Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablation, Appl.Phys.Lett, Vol. 69, pp. 3896, 1996.
• S.Tanaka, S.Iwai, Y.Aoyagi. Self-assembling GaN quantum dots on AlxGal-xN surfaces using a surfactant, Appl.Phys.Lett., Vol. 69, pp. 4096, 1996.
• J.S.Lee, S.Iwai, H.Isshiki, t.Meguro, T.Sugano, Y.Aoyagi. Self limiting growth on nominally oriented(111)A GaAs substrates in atomic layer epitaxy, Appl.Surf.Sci., Vol. 103, pp. 275, 1996.
• T.Meguro, K.Sakai, Y.Yamamoto, T.Sugano, Y.Aoyagi. Tunable UV laser induced digital etching of GaAs:wavelength dependence of etch rate and surface processes, Appl.Surf.Sci., Vol. 106, pp. 365, 1996.
• JP.Bird, K.Ishibashi, R.Newbury, D.M.Olatana, R.P.Taylor, Y.Ochiai, Y.Aoyagi, T.Sugano. Investigations of electron wave interference and quantum chaos in ballistic quantum dots with square geometry, Brazilian J.Physics, Vol. 26, pp. 285, 1996.
• JP.Bird, K.Ishibashi, Y.Aoyagi, T.Sugano. Device noise as a probe of electron motion in quantum dots at hight magnetic fields, Brazilian J.Physics, Vol. 26, pp. 341, 1996.
• A.Kanda, K.Ishibashi, Y.Aoyagi, T.Sugano. Magnetoresistance of single-electron transistor with a superconducting loop, Czech.J.Phys., Vol. 46, pp. 2297, 1996.
• JP.bird, D.K.Ferry, R.Akis, Y.Ochiai, K.Ishibashi, Y.Aoyagi. Periodic conductance fluctuations and stable orbits in mesoscopic semiconductor biliards, Europhysics Lett., Vol. 35, pp. 529, 1996.
• S.Komuro, T.Kato, T.Morikawa, P.O'Keeffe, Y.Aoyagi. Carrier dynamics in oxidized porous silicon, J.Appl.Phys., Vol. 80, pp. 1749, 1996.
• Y.J.Park, P.O'Keeffe, K.Ozasa, H.Mutoh, Y.Aoyagi, J.K.Min. Oxygen atomic flux O enhancement by gas-pulsed electron cyclotron resonanc plasma, J.Appl.Phys., Vol. 81, pp. 2114, 1996.
• J.S.Lee, S.Iwai, H.Isshiki, T.Meguro, T.Sugano, Y.Aoyagi. Atomic layer epitaxy of GaAs and GaAsxP1-x on nominally oriented GaAs(111) substrates with high quality surface and interfaces, J.Luminescence, Vol. 70, pp. 144, 1996.
• JP.Bird, K.Ishibashi, Y.Aoyagi, T.Sugano. Zero-current voltage fluctuations in quantum dots at high magnetic fields, J.Phys.Soc.Jpn., Vol. 64, pp. 3618, 1995.
• Y.Ochiai, K.Yamamoto, Y.Onishi, M.Kawabe, K.Ishibashi, JP.Bird, .Aoyagi, T.Sugano, D.K.Ferry. Correlation field analysisi of the influence of device geometry and bulk disorder on electron, Jpn.J.Appl. Phys., pp. 1339, 1995.
• D.K.Ferry, F.Edwards, K.Yamamoto, Y.Ochiai, JP.Bird, K.Ishibashi, Y.Aoyagi, T.Sugano. Is there a magnetic-field-induced breakdown in the universality of conductance fluctuations?, Jpn.J.Appl.Phys., Vol. 34, pp. 4338, 1995.
• JP.Bird, K.Ishibashi, Y.Ochiai, Y.Aoyagi, T.Sugano. The magneticc field dependent characteristics of conductance flucuations in ballistic quantum dots, Jpn.J.Appl.Phys., Vol. 34, pp. 4342, 1995.
• Y.Ochiai, K.Yamamoto, K.Ishibashi, JP.Bird, Y.Aoyagi, Y.Sugano, D.K.Ferry. Study of scattering processes in quantum wires by a correlation field analysis of the phase coherent interferences, Jpn.J.Appl.Phys., Vol. 34, pp. 4345, 1995.
• K.Ishibashi, JP.Bird, D.K.Ferry, M.Lakrimi, A.D.C.Grassie, K.M.Hutchings, Y.OchiaiT.sugano, Y.Aoyagi. Electron wave interfernce in ballistic and quasi-ballistic nanostructures, Jpn.J.Appl.Phys., Vol. 34, pp. 6966, 1995.
• Y.Ochiai, K.Yamamoto, K.Ishibashi, JP.Bird, Y.aoyagi, T.Sugano, D.K.Ferry. Low dimensional transport in GaAs/AlGaAs quasi-one-dimensional wires by a correlation field analysis of phase coherent inteference, Mater.Sci.Eng., Vol. B35, pp. 364, 1995.
• X.Zhao, O.Schoenfeld, S.Nomura, S.Komuro, Y.Aoyagi, T.Sugano. Nanocrystalline Si:a material constructed by Si quantum dots, Mater.Sci.Eng, Vol. B35, pp. 467, 1995.
• Z.Ahao, O.Schoenfeld, S.Nomura, J.Kusano, S.Komuro, Y.Aoyagi, T.Sugano. Blue light emitting silicon nanocrystallites, ICPS'22 Proc.of The Physics of Semiconductors',Ed.by Dabid J.Lockwood,World Scientific, pp. 2035, 1995.
• JP.Bird, K.Ishibashi, Y.Ochiai, M.Lakrimi, A.D.C.Grassie, K.M.Hutchings, Y.Aoyagi, T.Sugano. Breakdown of correlated diffusion in quasiballistic quantum wires at high magnetic fields, Phys.Rev., Vol. B52, pp. 1793, 1995.
• I.Aksenov, J.Kusano, Y.Aoyagi, T.Sugano, T.Yasuda, Y.Segawa. Effect of a magnetic field on the excitonic luminescence line shape in a quantum well, Phys.Rev., Vol. B51, pp. 4278, 1995.
• Y.Yasui, Y.Segawa, Y.Aoyagi, Y.Iimura, G.E.W.Bauer, I.Mogi, G.Kido. Exciton states in two-dimensional systems of GaAs/AlAs multi-quantum-well structures under high magnetic fields, Phys.Rev., Vol. B51, pp. 9813, 1995.
• JP.Bird, K.Ishibashi, D.K.ferry, Y.Ochiai, Y.Aoyagi, Y.Sugano. Phase breaking in ballistic quantum dots: Transition from two-to zero-dimensional behavior, Phys.Rev., Vol. B51, pp. 18037, 1995.
• JP.Bird, K.Ishibashi, D.K.Ferry, Y.Ochiai, Y.Aoyagi, T.Sugano. Spectral characteristics of conductance fluctuations in ballistic quantum dots; The influence of finite magnetic field and temperature, Phys.Rev., Vol. B52, pp. 8295, 1995.
• I.Aksenov, Y.Aoyagi, J.Kusano, T.sugano, T.Yasuda, Y.Segawa. Temporal dynamics of a magnetoexciton in a quantum well, Phys.Rev., Vol. B52, pp. 17430, 1995.
• JP.lBird, D.M.Olatona, R.Newbury, RP.Taylor, K.Ishibashi, M.Stopa, Y.Aoyagi, T.Sugano, Y.Ochiai. Lead-induced transition to chaos in ballistic mesoscopic billiards, Phys.Rev., Vol. B52, pp. RCR14336, 1995.
• O.Schoenfeld, T.Hempel, X.Zhao, Y.Aoyagi. Crysstallization of amorphous silicon by NiSi2 precipitates, Thin Solid Films, Vol. 261, pp. 236, 1995.
• E.K.Kim.S.K.Min, K.Ozasa, Y.Aoyagi. In situ pattern etching of GaAs by trimethylindium and H202 gases with electron-beam -induced resist, Semicond.Sci.Technol., Vol. 10, pp. 91, 1995.
• S.Nomura, W.Zho, O.Schoenfeld, K.Misawa, T.Kobayashi, Y.Segawa, Y.Aoyagi, T.Sugano. Magnetic field effects in direct-and indirect-gap semiconductor quantum dots, Jpn.J.Appl.Phys.Suppl., Vol. 34, pp. 125, 1995.
• P.O'Keeffe, Y.Aoyagi, S.Komuro, T.Kato, T.Morikawa. Room-temperature backbond oxidation of the porous silicon surface by oxygen radical irradiation, Appl.Phys.Lett., Vol. 66, pp. 836, 1995.
• J.S.Lee, S.Iwai, H.Isshiki, T.Meguro, T.Sugano, Y.Aoyagi. Step induced desorption of AsHx in atomic layer epitaxy on GaAs (001)vicinal substrates, Appl.Phys.Lett., Vol. 67, pp. 1283, 1995.
• K.Ozasa, Y.Aoyagi. Temporal evolution of hydrogen plasma produced with gas pulse injection scheme, Surf.Coat.Tech., Vol. 74-75, pp. 345, 1995.
• M.Ishii, T.Meguro, T.Sugano, K.Gamo, Y.Aoyagi. Surface reaction control in digital etching of GaAs by using a tunable UV laser system:reaction control mechanism in layer-by-layer etching, Appl.Surf.Sci., Vol. 86, pp. 554, 1995.
• S.Schoenfeld, X.Zhao, T.Hempel, Y.Aoyagi. Optical absorption of microcrystalline Si-Ni thin films, J.Appl.Phys., Vol. 78, pp. 1987, 1995.
• H.Isshiki, Y.Aoyagi, T.Sugano, S.Iwai, T.Meguro. Characterization of GaAs/GaAsP quantum wire structures fabricated by atomic layer epitaxy, J.Appl.Phys., Vol. 78, pp. 7277, 1995.
• I.Aksenov, Y.Aoyagi, J.Kusano, T.Sugano, T.Yasuda, Y.Segawa. Effect of a magnetic field on the excitonic luminescence decay time in a GaAs-AlxGal-xAs quantum well, Jpn.J.Appl.Phys., Vol. 34, pp. 547, 1995.
• J.Cui, S.Zhang, A.Tanaka, Y.Aoyagi. Study on dimer density evolution during GaAs short-pulse supersonic nozzle beam epitaxy on (2x4)γ initial surface by millisecond time-resolved reflectance difference, J.Crys.Growth, Vol. 150, pp. 616, 1995.
• S.Zhang, J.Cui, A.Tanaka, Y.Aoyagi. Fast reconstruction transitions and fast surface reactions in short-pulse supersonic nozzle beam epitaxy, J.Crys Growth, Vol. 150, pp. 622, 1995.
• T.Shiokawa, T.Hanada, M.Shigeno, T.Sugano, Y.Aoyagi. In situ observation of undevelopment patterns in atomic force microscope lithography, J.Photopolym.Sci.Technol., Vol. 8, pp. 677, 1995.
• O.Schoenfeld, X.Zhao, T.Hempel, Y.Aoyagi, T.Sugano. Structure and electriccal transport in microcrystalline composite Si-NiSi2 thin films, J.Phys.Chem.Solids, Vol. 56, pp. 123, 1995.
• S.Zhang, J.Cui, A.Tanaka, Y.Aoyagi. Short-pulse supersonic nozzle beam epitaxy: A new approach for submonolayer controlled growth, Appl.Phys.Lett, Vol. 64, pp. 1105, 1994.
• S.Zhang, J, Cui, A.Tanaka, Y.Aoyagi. Short-pulse chemical beam epitaxy, J.Cryst.Growth, Vol. 136, pp. 200, 1994.
• K.Szasa, T.Ye, Y.Aoyagi. Deposition of gallium oxide and indium oxide on GaAs for in situ process use by alternating supply of TEGa,TMIn, and H202 as surge pulses, J.Vac.sci.Technol., Vol. A12, pp. 120, 1994.
• Y.F.Lu, M.Takai, s.Komuro, T.Shiokaewa, Y.Ayogi. Surface cleaning of metals by pulsed-laser irradiation in air, Appl.Phys., Vol. A59, pp. 281, 1994.
• X.Zhao, O.Schoenfeld, Y.Aoyagi, Y.Sugano. Microstructure and photoluminescence of nanocrystalline silicon thin films, J.Phys.D:Appl.Phys., Vol. 27, pp. 1575, 1994.
• T.Meguro, T.Caughey, L.Wolf, Y.Aoyagi. Solid-state tunable deep-ultraviolte laser system from 198 to 300nm, Opt.Lett., Vol. 19, pp. 102, 1994.
• Y.Ochiai, K.Yamamoto, t.Onishi, M.Kawabe, K.Ishibashi, JP.Bird, Y.Aoyagi, T.Sugano. Correlation field in quasi-ballistic narrow wires, Physica B, Vol. 201, pp. 357, 1994.
• T.Yasui, Y.Segawa, Y.Aoyagi, Y.Iimura, G.E.W.Bauer, I.Mogi, G.Kido. Two-dimensional exciton states of GaAs/AlAs multiquantum wells under high magnetic fields, Physica B, Vol. 201, pp. 407, 1994.
• Y.Ochiai, K.Yamamoto, T.Onishi, K.Ishibashi, JP.Bird.Y.Aoyagi, T.Sugano, D.K.Ferry. Magnetotransport in quasi-ballistic narrow wires, Physica B, Vol. 201, pp. 357, 1994.
• JP.Bird, K.Ishibashi, M.Stopa, RP.Taylor, Y.Aoyagi, T.Sugano. Magneto-Coulomb oscillations, Phys.Rev., Vol. B49, pp. 11488, 1994.
• JP.Bird, K.Ishibashi, M.Stopa, Y.Aoyagi, T.Sugano. Coulomb blockade of the Aharonov-Bohm effecct in GaAs/AlxGal-xAs quantum dots, Phys.Rev., Vol. B50, pp. 14983, 1994.
• X.Zhao, O.Schoenfeld, S.Komuro, Y.Aoyagi, T.Sugano. Quantum confinement in nanometer-sized silicon crystallites, Phys.Rev., Vol. B50, pp. 18654, 1994.
• JP.Bird, K.Ishibashi, Y.Aoyagi, T.Sugano. Spectral characteristics of conductance fluctuations in ballistic quantum dots, Phys.Rev., Vol. B50, pp. 18678, 1994.
• K.Ozasa, Y.Aoyagi. Generation of high-peak pulse beam of hydrogen plasma or use in short-pulsed chemical beam epitaxy, Appl.Phys.Lett., Vol. 64, pp. 2220, 1994.
• J.Cui, S.Zhang, A.Tanaka, Y.Aoyagi. Millisecond time-resolved reflectance difference measurements of GaAs grown by short-pulse supersonic nozzle beam epitaxy, Appl.Phys.Lett., Vol. 64, pp. 3285, 1994.
• X.Zhao, O.Schoenfeld, Y.Aoyagi, T.Sugano. Violet luminescence from anodized microcrystalline silicon, Appl.Phys.Lett., Vol. 65, pp. 1290, 1994.
• K.Ozasa, E.K.Kim, Y.Aoyagi. In situ pattern deposition of In203 and in situ pattern etching of GaAs, Appl.Phys.Lett., Vol. 65, pp. 1635, 1994.
• S.Iwai, T.Meguro, H.Isshiki, T.Sugano, Y.Aoyagi. Reduction of carbon imurity in GaAs by photo-irradiation in atomic layer epitaxy, Appl.Surf.Sci., Vol. 79/80, pp. 232, 1994.
• M.Ishii, T.Meguro, T.Sugano, K.Gamo, Y.Aoyagi. Digital etching by using a laser beam, Appl.Surf.Sci., Vol. 79/80, pp. 104, 1994.
• H.Isshiki, Y.Aoyagi, T.Sugano, S.Iwai, T.Meguro. Surface processes of selective growth by atomic layer epitaxy, Appl.Surf.Sci., Vol. 82/83, pp. 57, 1994.
• T.Meguro, M.Ishii, T.Sugano, K.Gamo, Y.Aoyagi. Control of the etching reaction of digital etching using tunable UV laser irradiation, Appl.Surf.Sci., Vol. 82/83, pp. 193, 1994.
• JP.Bird, K.Ishibashi, Y.Aoyagi, T.Sugano. Observation of Aharonov-Bohm oscillations in the magnetoresistance of GaAs/AlGaAs quantum dot, Jpn.J.Appl.Phys., Vol. 33, pp. 2509, 1994.
• O.Schoenfeld, T.Hempel, X.Zhao, T.Sugano, Y.Aoyagi. Optical,electrical and structural investigations of the transition from amorhous to microcrystalline silicon, Jpn.J.Appl.Phys., Vol. 33, pp. 6082, 1994.
• P.O'Keeffe, S.Komuro, T.Kato, T.Morikawa, Y.Aoyagi. Radical-beam-induced surface reaction processes of porous Si, Jpn.J.Appl.Phys., Vol. 33, pp. 7117, 1994.
• X.Zhao, O.Schoenfild, J.Kusano, Y.Aoyagi, T.Sugano. Violet and blue light emissions from nanocrystalline silicon thin films, Jpn.J.Appl.Phys., Vol. 33, pp. L649, 1994.
• X.Zhao, O.Schoenfeld, J.Kusano, Y.Aoyagi, T.Sugano. Observation of direct transitions in silicon nanocrystallites, Jpn.J.Appl.Phys., Vol. 33, pp. L899, 1994.
• M.Nagano, S.Iwai, K.Nemoto, Y.Aoyagi. Atomic layer epitaxy of AlAs using dimetnhylethylamine alane, Jpn.J.Appl.Phys., Vol. 33, pp. L1289, 1994.
• YE.Lu, M.Takai, T.Shiokawa, Y.Aoyagi. Growth of ultrathin silver films by excimer-laser-induced decompositon of silver acetate in air, Jpn.J.Appl.Phys., Vol. 33, pp. L1313, 1994.
• O.Schoenfeld, X.Zhao, T.hempel, J.Alaesing, Y.Aoyagi, T.Sugano. Formation of nanocrystallites in amorphous silicon thin films, J.Crys.Growth, Vol. 142, pp. 268, 1994.
• S.Zhang, J.Cui, A.Tanaka, Y.Aoyagi. Fast evolution of surface dynamics during epitaxy of GaAs on c(4x4)reconstructed surface, J.Crys.Growth, Vol. 145, pp. 974, 1994.
• JP.Bird, K.Ishibashi, Y.Aoyagi, T.Sugano. Experimental studies of electronic transport in semionductor quantum dot structures, Solid-State Elec., Vol. 37, pp. 709, 1994.
• S.Nomura, X.Zhano, O.Schoenfeld, K.Misawa, K.Kobayashi, Y.Aoyagi. Magnetic field dependence of optical absorption in Si nanocrystallites:A quantum size effect, Solid State Comm., Vol. 92, pp. 665, 1994.
• M.Stopa, JP.Bird, K.Ishibashi, Y.Aoyagi, T.Sugano. Magneto-Coulomb oscillations in GaAs-AlGaAs quantum dots structures, Superlatt. and Microstr., Vol. 15, pp. 99, 1994.
• JP.Bird, K.Ishibashi, Y.Aoyagi, T.Sugano. Giant backscattering resonances in the magneto-resistance of GaAs/AlGaAs quantum dots, Superlatt. and Microstr., Vol. 16, pp. 161, 1994.
• Y.Ochiai, K.Yamamoto, T.Onishi, K.Ishibashi, JP.Bird, Y.Aoyagi, T.Sugano. Scaling properties of universal conductance fluctuations in quasi ballistic narrow wires, Superlatt. and Microstr., Vol. 16, pp. 179, 1994.
• K.Ozasa, T.Ye, Y.Aoyagi. Deposition of thin indium oxide film and its application to selective epitaxy for in situ processing, Thin Solid Films, Vol. 246, pp. 58, 1994.
• S.Hara, s.Misawa, S.Yoshida, Y.Aoyagi. Additional dimer-row sturucture of 3C-SiC(001)surfaces observed by scanning tunneling microscopy, Phys.Rev., Vol. B50, pp. 4548, 1994.
• 石橋幸治, 菅野卓雄, 青柳克信. ﾒｿﾞｽｺｯﾋﾟｯｸからﾅﾉ構造へ-半導体微小構造における電子の波と電荷-, ｲﾝﾃﾘｼﾞｪﾝﾄ材料, Vol. 4, pp. 43, 1994.
• Y.Aoyagi, K.Shinmura, K.Kawasaki, I.Nakamoto, K.Gamo, S.Namba. Atomic layer manipulation of ?｡-?｣ compounds, Thin Solid Films, Vol. 225, pp. 120, 1993.
• K.Ozasa, T.Ye, Y.Aoyagi. Thin gallium oxide film deposited in vacuum for in situ process use, Jpn.J.Appl.Phys., Vol. 32, pp. L329, 1993.
• S.Hara, S.Misawa, S.Yoshida, Y.Aoyagi. STM study of Si-rich reconstructions on 3C-SiC(001)surface, Inst.Phys.Conf.Ser., No. 137, 1993.
• Y.Iimura, J.Kusano, s.Kobayashi, Y.Aoyagi, T.Sugano. Alignment control of a liquid crystal on a photosensitive polyvinylalcohol film, Jpn.J.Appl.Phys., Vol. 32, pp. L93, 1993.
• S.Nonoyama, A.Nakamura, Y.Aoyagi, T.Sugano, A.Okiji. Numerical study of the interference effects of electron waves scattered by impurities or slits in a quasi-one-dimensional system, Phys.Rev., Vol. B47, pp. 2423, 1993.
• H.Issiki, Y.Aoyagi, T.Sugano, S.Iwai, T.Meguro. Crystallographic selective growth of GaAs by atomic layer epitaxy, Appl.Phys.Lett., Vol. 63, pp. 1528, 1993.
• K.Ozasa, T.Ye, Y.Aoyagi. Selective epitaxy of GaAs on indium oxide mask follwed by in situ remval of the mask, Appl.Phys.Lett., Vol. 63, pp. 1634, 1993.
• U.Ochiai, T.Onishi, M.Kawabe, K.Ishibashi, JP.Bird, Y.Aoyagi, T.Sugano. Interference area of universal conductance fluctuations in narrow GaAs/AlGaAs wires, Jpn.J.Appl.Phys., Vol. 32, pp. 528, 1993.
• H.Hirose, t.Hara, K.Ando, F.Negishi, y.Aoyagi. Enhancement of soft X-ray emission from AlPlasma by pulse train laser irradiation, Jpn.J.Appl.Phys., Vol. 32, pp. L1538, 1993.
• K.Ozasa, T.Ye, Y.Aoyagi. Compositon change of indium oxide film by triethylgallium irradiation prepared for in situ selective epitaxy use, Jpn.J.Appl.Phys., Vol. 32, pp. 4732, 1993.
• M.Ishii, T.Meguro, K.Gamo, T.Sugano, Y.Aoyagi. Digital etching using KrF excimer laser:Approach to atomic-order-controlled etching by photo induced reaction, Jpn.J.Appl.Phys., Vol. 32, pp. 6178, 1993.
• K.Ishibashi, JP.Bird, M.Stopa, T.Sugano, Y.Aoyagi. The transmission properties of quantum dots at high magnetic fields, Jpn.J.Appl.Phys., Vol. 32, pp. 6246, 1993.
• H.Isshiki, Y.Aoyagi, T.Sugano, S.IwaiT.Meguro. Formation of loow-dimensional structures by atomic layer epitaxy, Optoelectronics-Devices and Tech., Vol. 8, pp. 509, 1993.
• T.Onishi, Y.Ochiai, M.Kawabe, K.Ishibashi, JP.Bird, Y.Aoyagi, T.Sugaon. Conductance fluctuations in a quasi-ballistic narrow wire confined by split metal gates, Physca B, Vol. 184, pp. 351, 1993.
• R.A.Hopfel, R.Rodrigues, Y.Iimura, Y.Yasui, Y/Segawa, Y.Aoyagi. Intersubband relaxation of heavy-hole excitons in GaAs quantum wells, Phys.rev., Vol. B47, pp. 10943, 1993.
• T.Onishi, M.Kawabe, K.Ishibashi, JP.Bird, Y.Aoyagi, T.Sugano, Y.Ochiai. Scaling properties of universal conductance fluctuations in quasi-ballistic split-gate wires:Probing geometrical effects, Phys.Rev., Vol. B48, pp. 12353, 1993.
• JP.Simko, T.Meguro, S.Iwai, K.Ozawa, Y.Aoyagi, T.Sugano. Surface photo-absorption study of the laser assisted atomic layer epitaxial growth process of GaAs, Thin Solid Films, Vol. 225, pp. 40, 1993.
• T.Meguro, M.Ishii, K.Kodama, Y.Yamamoto, K.GamomY.Aoyagi. Surface processes in digital etching of GaAs, Thin Solid Films, Vol. 225, pp. 136, 1993.
• S.Nonoyama, Y/Aoyagi, S.Namba. Ab initio cluster study of the interaction of hydrogen with the GaAs(100)surface, Jpn.J.Appl.Phys., Vol. 31, pp. 1298, 1992.
• S.Hara, Y.Aoyagi, M.Kawai, S.Misawa, E.sakuma, SD.Yoshida. Si.desorption fro a β-SiC(001)surface by an oxygen flux, Surf.Sci.Lett.,, Vol. 278, pp. L141, 1992.
• M.Ryoji, t.Hara, K.OhnishiM.Hamagaki, Y.Dake, M.Tohkai, Y.Aoyagi. New etching system with a large diameter using electron beam excited plasma, Jpn.J.Appl.Phy., Vol. 31, pp. 4504, 1992.
• M.Ishii, T.Meguro, H.Kodama, Y.Yamamoto, Y.Aoyagi. Study of surface processes in the digital etching of GaAs, Jpn.J.Appl.Phys., Vol. 31, pp. 2212, 1992.
• T.Miyoshi, K.S.Lee, Y.Aoyagi. Time-resolved luminescence spectra of porous Si, Jpn.J.Appl.Phys., Vol. 31, pp. 2470, 1992.
• S.Hara, Y.Aoyagi, M.Kawai, S.Misawa, E.Sakuma, s.Yoshida. Atomic layer control of β-SiC(001)surface, Springer Proceedings in Physics, Vol. 71, pp. 90, 1992.
• T.Meguro, JP.simko, S.Iwai, K.Ozawa, A.Hirata, Y.Aoyagi, T.Sugano. Study on surface decomposition processes of alkylgallium molecules in laser-ALE, 11th Rec.Alloy Semicond.Phy.and Elec.Symp., pp. 231, 1992.
• Y.Aoyagi, K.Shinmura, K.Kawasaki, T.Tanaka, K.Gamo, S.Namba, I.Nakamoto. Molecular layer etching of GaAs, Appl.Phys.Lett.,, Vol. 60, pp. 968, 1992.
• K.Ishibashi, Y.Aoyagi, S.Namba, Y.Ochiai, M.Kawabe, K.Gamo. Effect of side wall scattering on the relaxation time in a narrow GaAs/AlGaAs wire in magnetic field, Superlatt. and Microstr., Vol. 11, pp. 195, 1992.
• Y.Aoyagi, T.Hara, M.Hamagaki, M.Ryoji, K.Ohnishi. Large radium new etching system using electron beam excited plasma, J.Vac.Sci.technol., Vol. B10, pp. 2699, 1992.
• K.S.Lee, Y.Aoyagi, T.Sugano. Modified pertubationalo method for the magnetoexciton ground state in quantum wells, Phys.Rev., Vol. B46, pp. 10269, 1992.
• M.Ishii, H.Kodama, T.Meguro, y.Aoyagi, Y.Yamamoto. Reaction processes in digital etching, Proc.1st Intl'l conf.on Intelligent Materials, pp. 53, 1992.
• Y.AoyagiT.Meguro, S.Iwai, JP.Simko. Beam assisted atomic layer manipulation, Proc.Laser advnaced Mater.Processing(LAMP'92), pp. 1175, 1992.
• S.Nonoyama, K.Ishibashi, Y.Aoyagi, S.Namba. Numerical study of the charge distribution in a quantum wire consisting a junction of wide-narrow geometry, J.Phys.soc.Jpn,, Vol. 61, pp. 3829, 1992.
• K.Ishibashi, Y.Aoyagi, S.Namba, Y.Ochiai, JP.Bird, M.Kawabe. Conductance fluctuations in a narrow GaAs/AlGaAs split gate wire, Surf.Sci.,, Vol. 263, pp. 378, 1992.
• Y.Ochiai, T.Ohnishi, JP.Bird, M.Kawabe, K.Ishibashi, Y.Aoyagi, S.Namba. Size effect in the low temperature magnetoresistance of narrow GaAs/AlGaAs wires, Surf.Sci.,, Vol. 263, pp. 388, 1992.
• S.Hara, y.Aoyagi, M.Kawai, S.Misawa, E.Sakuma, S.Yoshida. Self-limiting growth on β-SiC(001)surface , Surface Science, Vol. 273, pp. 437, 1992.
• H.Yashiro, T.Hara, K.Ando, F.Negishi, S.Ido, Y.Aoyagi. Observaation of soft X-ray amplified spontaneous emission in a recombining Si plasma pumped by a low-power laser, Jpn.J.Appl.Phys., Vol. 31, pp. L92, 1992.
• S.Nonoyama, K.Ishibashi, Y.Aoyagi, S.Namba. Numerical studies of quantum conduction through a junction of wide-narrow geometry, Appl.Phys.Lett., Vol. 60, pp. 234, 1992.
• K.Ishibashi, JP.Bird, t.Sugano, Y.Aoyagi, Y.Ochiai, T.Ohnishi, M.Kawabe. Conductance fluctuations in GaAs/AlGaAs narrow wires in quasi-ballistic regime, Jpn.J.Appl.Phy., Vol. 31, pp. 4504, 1992.
• Y.Aoyagi, S.Iwai, T.Meguro. Surface kinetics of laser atomic layer epitaxy(Laser-ALE)of GaAs,AlAs nad AlGaAs, Denki Kagaku, Vol. 59, pp. 4152, 1991.
• Y.Iimura, Y.Segawa, G.E.W.Bauer, M.M.Lin, Y.Aoyagi, S.Namba. Magnetoexcitons in a GaAs/AlAs quantum well, Optoelectronics, Vol. 6, pp. 73, 1991.
• H.Q.Hou, W.Staaguhn, S.Takeyama, N.Miura, Y.Segawa, Y.Aoyagi, S.Namba. Diamagnetic shift in InxGal-xAs/GaAs strained quantum wells, Phys.Rev.,, Vol. B43, pp. 4152, 1991.
• Y.Aoyagi, T.Meguro, S.Iwai, A.Doi. Laser assisted atomic layer epitaxy, Materials Sci. and Eng.,, Vol. B10, pp. 121, 1991.
• D.K.Shuh, R.S.Williams, Y.Segawa, J.Kusano, Y.Aoyagi, S.Namba. Line-shape and lifetime studies of exciton luminescence from confined CuCl thin films, Phys.Rev., Vol. B44, 1991.
• S.Iwai, T/Meguro, Y.Aoyagi, T.Miysohi. Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxy, J.Cryst.Growth, Vol. 107, pp. 136, 1991.
• P.O'Keeffe, S.Komuro, S.Den, T.Morikaa, Y.Aoyagi. Deve;p@,emt amnd application of a compact electron cyclotron resonance source, Jpn.J.Appl.Phy., Vol. 30, pp. 3164, 1991.
• P.O'Keeffe, S.Komuro, S.Den, T.Morikawa, Y.Aoyagi. The irradiation effects of an oxygen radical beam on the preparation of superconducting thin films, Jpn.J.Appl.Phys., Vol. 30, pp. L834, 1991.
• K.Ogai, Y.Kimura, R.Shimizu, K.Ishibashi, Y.Aoyagi, S.Namba. Microfabricated submicron Al-filament biprism as applied to electron holography, Jpn.J.Appl.Phys., Vol. 30, pp. 3272, 1991.
• J.takahara, T.Kakuta, T.Yamashita, Y.Takagaki, T.Shiokawa, K.Gamo, S.Takaoka, K.Murase, yoshinobu aoyagi. Ballistic electron transport on periodic and quasi-periodic triangular lattices of scatterers, Jpn.,J.Appl.Phys., Vol. 30, pp. 3250, 1991.
• Y.Ochiai, T.Onishi, JP.Bird, M.Kawabe, K.Ishibashi, y.Aoyagi, S.Namba. Low temperature magnetoresistance of a quasi-ballistic narrow wire confined by split metal gates, Jpn.J.Appl.Phys., Vol. 30, pp. 3859, 1991.
• T.Meguro, M.Ishii, H.Kodama, N.Hamagaki, T.Hara, Y.Yamamoto, Y.Aoyagi. Layer-by-layer controlled digital etching by means of an electron-beam-excited plasma system, Jpn.J.Appl.Phys., Vol. 29, pp. 2216, 1990.
• Y.Aoyagi, T.Meguro, S.Iwai. Beam assisted layer-by-layer processes and the mechanism in ?｡-?｣ compounds, ACTAPOLYTECHNICA SCANDINAVICA, Vol. 195, pp. 55, 1990.
• T.Miyoshi, S.Iwai, Y.Iimura, Y.Aoyagi, S.Namba. characterization of GaAs and AlGaas layers grown by laser atomic layer epitaxy, J.J.Appl.Phys., Vol. 29, pp. 1435, 1990.
• T.Meguro, S.Iwai, Y.aoyagi, K.Ozaki, Y.Yamamoto, t.Suzuki, Y.Okano, A.Hirata. Atomic layer epitaxy of AlAs and AlGaas, J.Cryst.Growth, Vol. 99, pp. 540, 1990.
• K.Nagata, Y.Iimura, Y.Aoyagi, S.Namba. Laser assisted chemical beam epitaxy, J.Crys.Growth, Vol. 105, pp. 52, 1990.
• T.Meguro, M.Ishii, H.Kodama, M.Hamagaki, T.Hara, Y.Yamamoto, Y.Aoyagi. Digital etching of GaAs using alternative incidence of Cl radicals and low energy Arions, conference on Solid State Devices and Materials, pp. 893, 1990.
• T.Meguro, M.Hamagaki, S.Modaressi, T.Hara, Y.Aoyagi, M.Ishii, Y.Yamamoto. Digital etching of GaAs:New approach of dry etching to atomic ordered processing, Appl.Phys.Lett., Vol. 56, pp. 1552, 1990.
• A.Doi, T.Meguro, Y.Aoyagi. Reduction of textural drift in a laser recrystallized silicon-on-insulator structure employing liquid encapsulation, Jpn.J.Appl.Phys., Vol. 29, pp. L847, 1990.
• Y.Iimura, K.Nagata, Y.Aoyagi, S.Namba. Surface segregation of indium during growth of InGaAs in chemical beam epitaxy, J.Crys.Growth, Vol. 105, pp. 230, 1990.
• Y.Iimura, Y.Segawa, G.E.W.Bauer, M.M.Lin, Y.Aoyagi, S.Namba. Exciton mixing in a wide GaAs/AlAs quantum well in weak and intermediate magnetic fields, Phy.Rev., Vol. B42, pp. 1478, 1990.
• A.Doi, Y.Aoyagi. Laser crystal growth of semiconductors, J.of Physics, Vol. 14, pp. 79, 1990.
• Y.Iimura, S.Shimoura, K.Nagata, S.Den, Y.AoyagiS.Namba. New fabrication technique of quantum wire structures with dimensions precisely controlled by the CBE Method, Jpn.J.Appl.Phys, Vol. 28, pp. L1083, 1989.
• T.Miyoshi, Y.Iimura, S.Iwai, Y.AoyagiY.Segawa, S.Namba. Chracterization of microscopical region of GaAlAs layers grown by switched laser metallorganic vapour phase epitaxy , Microsc.Semicond.Mater.Conf.,Oxford, Vol. 10-13, pp. 133, 1989.
• J.Kusano, Y.Segawa, Y/Aoyagi, S.Namba. Extremely slow energy relaxation of a two-dimensional exciton in a GaAs superlattice structure, Phys.Rev.,, Vol. B40, pp. 1685, 1989.
• Y.Aoyagi, A.Doi, T.Meguro, S.Iwai, K.Nagata, S.Nonoyama. Mechanism and application of laser atomic layer epitaxy of GaAs, Chemtronics, Vol. 4, pp. 117, 1989.
• K.Nagata, Y.Aoyagi, S.Namba, S.Den. Photo assisted chemical beam epitaxy of GaAs, J.Cryst.Growth, Vol. 95, pp. 142, 1989.
• J.Z.Yu, N.Masui, Y.Yuba, T.Hara, M.Hamagaki, Y.Aoyagi, K.Gamo, S.Namba. Induced defects in GaAs ethed by low energy ions in electron beam excited plasma(EEEP)system, Jpn.J.Appl.Phys.,, Vol. 28, pp. L1010, 1989.
• Y.Iimura, S.Shimomura, K.Nagata, S.Den, Y.Aoyagi, S.Namba. Soft X-Ray Lasing i an AlPlasma Produced by a 6J Laser, Jpn.J.Appl.Phys., Vol. 28, pp. L1083, 1989.
• T.Shiokawa, P.H.Kim, M.Hamagaki, T.Hara, Y.Aoyagi, K.Toyoda, S.Namba. Microstructures of GaAs fabricated by finely focused ion eam lithography, Microelectronic Eng.,, Vol. 9, pp. 277, 1989.
• T.Hara, K.Ando, N.Kusakabe, H.Yashiro, Y.Aoyagi. Soft X-ray lasing in Al plasma produced by alow power laser, Proc.of the Jpn.Acad., Vol. 65B, pp. 60, 1989.
• Y.Takagaki, K.Gamo, S.Namba, S.Takaoka, K.Murase, S.Ishida, K.Ishibashi, Y.Aoyagi. Nonlocal voltage fluctuations in a qquasi ballistic electron waveguide, Solid State Commun., Vol. 69, pp. 811, 1989.
• Q.H.Hou, Y.Segawa, Y.Aoyagi, S.Namba, J.M.Zhou. The determination of exciton binding energy in InGaAs/GaAs strained quantum well from magneto-absorption measurements, Solid State Commun.,, Vol. 70, pp. 997, 1989.
• J.Kusano, Y.Segawa, M.Mihara, Y.Aoyagi, S.Namba. Quantum size effect on the exciton polariton in GaAs thin films, Solid State Commun.,, Vol. 72, pp. 215, 1989.
• Q.H.Hou, Y.Segawa, Y.Aoyagi, s.Namba, J.M.Zhou. The determination of the band offset of multi-quanum wells by magneto-optical measurements, Solid State Commun.,, Vol. 74, pp. 159, 1989.
• Y.Hashiguchi, S.Hayashi, t.Ohtubo, S.Kato, M.Hamazaki, T.Hara, Y.Aoyagi, S.Namba. Surface analysisiby sputtered neutral mass spectrometry with electron-beam-excited plasma, Surf.and Interface Anal., Vol. 14, pp. 595, 1989.
• S.Iwai, T.Meguro, Y.Aoyagi, S.Namba. Patterned crystal growht of GaAs by laser assisted atomic layer epitaxy, Mat.Res.Soc.Symp.Proc., Vol. 129, pp. 171, 1989.
• Y.Iimura, K.Nagata, S.Den, Y.Aoyagi, S.Namba. Electron irradiation doping with carbon in chemical beam epitaxy, Mat.Res.Soc.Symp.Proc.,, Vol. 144, pp. 97, 1989.
• M.Kagami, T.shiokawa, Y.Segawa, Y.Aoyagi, S.Namba, H.Okada, T.Ito. Maskless ion implantation of cerium by focused ion beam, Jpn.J.Appl.Phys., Vol. 27, pp. 1157, 1988.
• 難波　進, 青柳克信. ﾌﾛﾝﾃｨｱ研究, 応用物理, Vol. 57, pp. 535, 1988.
• 青柳克信. ﾚｰｻﾞｰ誘起化学, ﾚｰｻﾞｰ研究, Vol. 17, pp. 163, 1988.
• Y, Takagaki, K.Gamo, S.Namba, S.Ishida, S.Takaoka, K.Murase, K.Ishibashi, Y.Aoyagi. Nonlocal quantum transport in narrow multibranched electron wave guide of GaAs-AlGaAs, Solid State Communications, Vol. 68, pp. 1051, 1988.
• 平田　彰, 岡野泰則, 青柳克信, 目黒多加志. MOVPE法によるGaAs単原子層成長, 化学工業, Vol. 39, pp. 473, 1988.
• T.Iitaka, S.Nomura, X.Zhao, Y.Aoyagi, T.Sugano. Order(N) aogorithms for linear-response functions, RIKEN Rev., No. 17, pp. 13, 1988.
• S.Komuro, Y.AoyagiT.Morikawa, S.Namba. preparation of high-Tc superconducting films by Q-switched YAG laser sputtering, Jpn.J.Appl.Phys., Vol. 27, pp. L34, 1988.
• K.Ishibashi, Y.Takagaki, K.Gamo, S.Namba, S.Takaoka, K.Murase, S.Ishida, Y.Aoyagi. Fabricatiion and transport characteristics of semiconductor wire and ring structures, J.Vac.Sci.Technol, Vol. B6, pp. 1852, 1988.
• T.Meguro, T.Suzuki, K.Ozaki, Y.Okano, A.Hirata, Y.Yamamoto, S.Iwai, Y.Aoyagi, S.Namba. Surface Processes in laser-atomic layer epitaxy(laser-ALE)of GaAs, J.Crys.Growth, Vol. 93, pp. 190, 1988.
• K.Nagata, Y.Iimura, Y.Aoyagi, S.Namba, S.Den, A.Moritani. Effects of Hydrogen on growth mechanism of GaAs in chemical beam epitaxy, J.Crys.Growth, Vol. 93, pp. 265, 1988.
• S.Kato, M.Hamagaki, T.Hara, K.Aoyagi, S.Namba, s.Hayashi, S.Yashiro. A.sputtered neutral mass spectrometer with high current,low energy ion bombardment, J.Crys.Growth, Vol. B35, pp. 550, 1988.
• Y.Takagaki, K.Gamo, S.Namba, s.Ishida, S.Takaoka, K.Murase, K.Ishibashi, Y.Aoyagi. Nonlocal quantum transport in narrow multibranched electron wave guide of GaAs-AlGaAs, Solid State Commun., Vol. 68, pp. 1051, 1988.
• S.Iwai, T.Meguro, A.Doi, Y.Aoyagi, S.Namba. Monolayer growth and direct writing of GaAs by pulsed laser metal organic vapor phase epitaxy, Paper presented at the 7th International Conference on Thin Films,New Delhi,India, pp. 405, 1988.
• A.Kanda, M.C.Geisler, K.Ishibashi, Y.Aoyagi, T.Sugano. Charging and interference effects in the superconnducting SET transistor with ring-shaped island, RIKEN Rev., No. 18, pp. 15, 1988.
• 目黒多加志, 岩井荘八, 青柳克信. ﾚｰｻﾞｰ単元思想制御結晶成長の機構と応用, 応用物理, Vol. 57, pp. 1728, 1988.
• S.Nakabayashi, s.Komuro, Y.Aoyagi, A.Kira. Transient grating method applied to electron-trasfer dynamics at a semiconductor/liquid interface, J.Phys.Chem., Vol. 91, pp. 1696, 1987.
• K.Ishibashi, K.Nagata, S.Ishida, K.Gamo, Y.Aoyagi, M.Kawabe, K.Murase, S.Namba. Quantum interference effect in narrow n＋-Gas wires, Mat.Res.Soc.Symp.Proc., Vol. 76, pp. 19, 1987.
• J.Kusano, Y.Segawa, S.Iwai, Y.Aoyagi, S.Namba. Optical characterization of undoped GaAs crystals grown by reduced pressure metal organic vapor-phase epitaxy, J.Appl.Phys., Vol. 62, pp. 1376, 1987.
• S.Iwai, A.Doi, Y.Aoyagi, S.Namba. Monolayer growth of GaAs by switched laser MOVPE, Paper presented at Int.Sym.GaAs and Related Compounds,Heraklion,Greece, pp. 191, 1987.
• J.Kusano, Y.Segawa, S.Iwai, Y.Aoyagi, S.Namba. Laser irradiation effects on photoluminescence spectra of undoped GaAs grown by metal organic vapor phase epitaxy, Appl.Phys.Letter, Vol. 52, pp. 67, 1987.
• T.Miyoshi, Y.Aoyagi, Y.Segawa, S.Namba. Transient characteristics of luminescence from GaAs/Ga0.6A10.4As multi-quantum-well structure under resonant excitation, Jpn.J.Appl.Phys., Vol. 26, pp. 1438, 1987.
• T.Miyoshi, Y.Aoyagi, Y.Segawa, S.Namba, N.Sano. Effects of an electric field on the decay time of luminescence from a GaAs/Ga0.6A10.4As multi-quantum-well structure, Jjpn.J.Appl.Phys., Vol. 26, pp. 1442, 1987.
• Y.Aoyagi, A.Doi, S.Iwai, S.Namba. Atomic-layer growth of GaAs by odulated-continuous-wave laser metal-organic vapor-phase epitay, J.Vac.Sci. & Technol., Vol. B5, pp. 1460, 1987.
• K.Ishibashi, H.Kawai, K.Gamo, S.Namba, S.Ishida, K.Murase, Y.Aoyagi, M.Kawabe. Sample size dependence of magnetoconductance fluctuation in narrow n＋-GaAs wires, Solid State Commun., Vol. 63, pp. 1169, 1987.
• H.Zhang, Y.Aoyagi, S.Iwai, S.Namba. Study of interface states in the metal-semiconductor junction using deep level transient spectroscopy, Appl.Phys.Letters, Vol. 50, pp. 341, 1987.
• K.Ishibashi, K.Nagata, K.Gamo, S.Namba, S.Ishida, K.Murase, M.Kawabe, Y.Aoyagi. Universal magnetoconductance fluctuations in narrow n＋GaAs wires, Solid State Commun., Vol. 61, pp. 385, 1987.
• J.Z.Yu, T.Hara, T.Yoshinaga, M.Hamagaki, Y.Aoyagi, S.Namba. Low energy ion etching of GaAs and Si using a new type of ion source excited by an electron beam, Extended Abstract of the 19th Conference on Solid state Devices and Materials,Tokyo, pp. 79, 1987.
• T.Hara, M.Hamagaki, A.Sanda, Y.Aoyagi, S.Namba. New high current low energy ion source, J.Vac.Sci.Technol., Vol. B5, pp. 366, 1987.
• K.Ishibashi, Y.Takagaki, K.Gamo, S.Namba, Y.Aoyagi, M.Kawabe. Observation of Aharonov-Bohm magnetoreistance oscillations in selectively doped GaAs-AlGaAs submicron structures, Solid State Commun., Vol. 64, pp. 573, 1987.
• K.Ishibashi, Y.Takagaki, S.Ishida, K.Gamo, Y.Aoyagi, M.Kawabe, K.Murase, S.Namba. Quantum Interference Effect in Selectively Doped GaAs-AlGaAs Submicron Ring, Extended Abstracts of the 19th Congerence on Solid State Devices and materials,Tokyo, pp. 363, 1987.
• A.Doi, Y.Aoyagi, S.Namba. Stepwise monolayer growth of GaAs by pulsed laser metal organic vaper phase epitaxy, Mat.Res.Soc.Symp.Proc., Vol. 75, pp. 217, 1987.
• K.Ishibashi, K.Nagata, K.Gamo, S.Namba, S.Ishida, K.Murase, M.Kawabe, Y.Aoyagi. Aperiodic magnetoconductance fluctuations in nanometer-structure GaAs wire, Proc.2nd Int.Symp.Foundations of Quantum Mechanics, pp. 225, 1986.
• Y.Aoyagi, M.Kanazawa, A.Doi, S.Iwai, S.Namba. Study of the dynamics of excited state in CdS and CuCl by transient grating techniques, IEEE J.Quantum Elec., Vol. QE22, pp. 1320, 1986.
• Y.Aoyagi, M.Kanazawa, A.Doi, S.Iwai, S.Namba. Characteristics of laser metal organic vaporphase epitaxy in GaAs, J.Appl.Phys., Vol. 60, pp. 3131, 1986.
• S.Komuro, Y.Aoyagik, Y.Segawa, S.Namba, A.Masuyama, D.Kruangman, H.Okamaoto, Y.Hamakawa. Characteristics of the time-resolved photoluminescence in microcrystalline Si, Jpn.J.Appl.Phys., Vol. 25, pp. 648, 1986.
• A.Doi, Y.Aoyagi, S.Namba. Growth of GaAs by switched laser metal organic vapor phase epitaxy, Appl.Phys.Letters., Vol. 48, pp. 1787, 1986.
• A.Doi, Y.Aoyagi, S.Namba. Stepwise monolayer growth of GaAs by switched laser metal organic vaporphase epitaxy, Appl.Phys.Letters, Vol. 49, pp. 785, 1986.
• A.Doi, Y.Aoyagi, S.Namba. Stepwise monolayer growth of Gaas by switched laser metalorganic vapor-phase epitaxy, Applied Physics Letters, Vol. 49, pp. 785, 1986.
• T.Hara, M.Hamagaki, A.Sanda, Y.Aoyagi, S.Namba. New high current low energy ion source, Jpn.J.Appl.Phys., Vol. 25, pp. 252, 1986.
• T.Miyoshi, Y.Aoyagi, A.Yamada, Y.Segawa, S.Namba, N.Sano. Effect of electric field on transient characteristics of luminescence from GaAs/Ga0.6A10.4As multi quantum well structure, Jpn.J.Appl.Phys., Vol. 25, pp. 504, 1986.
• Y.Aoyagi, S.Masuda, S.Namba. Laser enhanced metal organic chemical vapor deposition crystal growth in GaAs, Appl.Phys.Letters, Vol. 47,48, pp. 95,378, 1986.
• T.Miyoshi, Y.Aoyagi, Y.Segawa, S.Namba, M.Nunoshita. Transient characteristics of photoluminescence from GaAs/Ga0.7A10.3As multi quantum well structures, Jpn.J.Appl.Phys., Vol. 24, pp. L53, 1985.
• T.Miyoshi, Y.Aoyagi, Y.Segawa, S.Namba, M.Nunoshsita. Temperature dependence of decay time of photoluminescence from GaAs/Ga0.7A10.3As multi quantum well structures, Jpn.J.Appl.Phys., Vol. 24, pp. 369, 1985.
• Y.Aoyagi, Y.Segawa, M.Inami, S.Namba. GW high power sub picosecond pulse generation in near IR region, Opt.Commun., Vol. 52, pp. 425, 1985.
• Y.Aoyagi, S.Masuda, A.Doi, S.Namba. Maskless fabrication of high quality DFB laser grating by laser induced chemical etching, Jpn.J.Phys., Vol. 24, pp. L294, 1985.
• S.Komuro, Y.Aoyagi, Y.Segawa, S.Namba, A.Masuyama, K.Kruangam, H.Okamoto, Y.Hamakawa. Steady-state and time-resolved photoluminescence in microcrystalline silicon, J.Appl.Phys., Vol. 58, pp. 943, 1985.
• A.Doi, Y.Aoyagi, S.Namba. Enhanced MOCVD crystal growth in GaAs by CW Ar ion laser, Gallium Arsenide and Related Compounds,[ed.M.Fujimoto,The Institute of Physics,London], pp. 331, 1985.
• T.Aoyagi, S.Iwai, Y.Segawa, A.Doi, S.Namba. Laser MOCVD Crystal Growth in GaAs, Extended Abstracts of the 17th Conference on Solid Sstate Devices nad Materials,Tokyo, pp. 165, 1985.
• Y.Aoyagi, S.Masuda, S.Namba. Laser enhanced metal organic chemical vapor deposition crystal growth in GaAs, Appl.Phys.Letters, Vol. 47,48, pp. 95,378, 1985.
• S.Komuro, Y.Aoyagi, Y.Segawa, S.Namba, A.Masuyama, A.Matsuda, K.Tanaka. The dynamics of photoexcited carriers in microcrystalline silicon, J.Appl.Phys., Vol. 56, pp. 1658, 1984.
• J.Z.Yu, S.Iwai, Y.Aoyagi, T.Toyoda. Growht and Doping Characteristics of AlxGal-xAs Grown by LPE at 780℃, Science Papers of the Institute of Physical and Chemical Research, Vol. 78, pp. 13, 1984.
• Y.Aoyagi, Y.Segawa, T.Miyoshi, S.Namba. Picosecond carrier dynamics in GaAs/Gal-xAlxAs single and multi quantum well structure, Proceedings of 17th International conference on the physics of semiconductors,(ed.J.D.Chade and W.A.Harrison,Springer-Verlag,N.Y.), pp. 571, 1984.
• Y.Aoyagi, Y.Segawa, .Komuro, S.Namba. Carrier dynamics in microcrystalline silicon examined by transient grating method, Proceedings of 17th International conference on the physics of semiconductors,k(ed.J.D.Chadi and W.A.Harrison,Springer-Verlag,N.Y.), pp. 881, 1984.
• S.Komuro, Y.Aoyagi, Y.Segawa, S.Namba, H.Okamoto, Y.Hamakawa. Diffusion of carbon atoms in hydrogenated amorphous silicon carbide into hydrogenated amorphous silicon through the interface, J.Appl.Phys., Vol. 55, pp. 3866, 1984.
• J.Yu, Y.Aoyagi, s.Iwai, K.Toyoda, S.Namba. Anodic oxidation of AlxGal-xAs, J.Appl.Phys., Vol. 56, pp. 1895, 1984.
• T.Shiokawa, Y.Aoyagi, P.H.Kim, K.Toyoda, S.Namba. 30nm micro-fabrication in thick PMMA photoresist by focus ion beam, Jpn.J.Appl.Phys., Vol. 23, pp. L232, 1984.
• Y.Aoyagi, S.Komuro, Y.Segawa, S.Namba, H.Okamoto, Y.Hamakawa. Carrier dynamics in optically illuminated a-Si:H, Physica B, Vol. 117/118, pp. 894, 1983.
• Y.Segawa, Y.Aoyagi, S.Komuro, S.Namba. Determination of additional boundary conditions in CuCl, Physica B, Vol. 117/118, pp. 894, 1983.
• S.Komuro, Y.Aoyagi, Y.Segawa, S.Namba, A.Masuyama, H.Okamoto, y.Hamakawa. Picosecond carrier dynamics in optically illuminated glow discharge hydrogenated amorphous silicon, Appl.Phys.Letters, Vol. 42, pp. 79, 1983.
• S.Komuro, Y.Aoyagi, Y.Segawa, S.Namba, A.Masuyama, H.Okamoto, Y.Hamakawa. Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating method, Appl.Phys.Letters, Vol. 43, pp. 968, 1983.
• Y.Segawa, Y.Aoyagi, S.Nmba. Group velocity and dispersion relation of polariton wave-packet in CdS, J.Phys.Soc.Japan, Vol. 52, pp. 3664, 1983.
• K.Murakami, K.Masuda, Y.Aoyagi, S.Namba. Experimental tests of non-thermal effect for pulsed-laser annealing by time resolved reflectivity and EPR measurements, Physica B, Vol. 116, pp. 3664, 1983.
• S.Komuro, Y.Aoyagi, Y.Segawa, S.Namba, A.Masuyama, H.Okamoto, Y.Hamakawa. Surface and interface effects in a-Si:H observed by transient grating spectroscopy, J.Non-crystal.Solids, Vol. 59/60, pp. 501, 1983.
• S.Komuro, Y.Aoyagi, Y.Segawa, S.Namba, A.Masuyama, H.Okamoto, Y.Hamakawa. study of optically induced degradation of conductivity in hydrogenated amorphous silicon by transient grating method, Appl.Phys.Letters, Vol. 42, pp. 807, 1983.
• T.Miyoshi, Y.Aoyagi, Y.Segawa, S.Namba, H.Okamoto, Y.Hamakawa. Lifetime and diffusion coefficient of carriers in X-ray irradiated a- Si:H, Jpn.AAJ.Appl.Phys., Vol. 22, pp. 886, 1983.
• Y.Segawa, Y.Aoyagi, S.Komuro, S.Namba. Picosecond induced absorption in CuCl:a new approach to the determination of additional boundary conditions, Phys.Rev.Letters, Vol. 50, pp. 436, 1983.
• S.Iwai, Y.Aoyagi, M.Iwaki, K.Toyoda, S.Namba. Compositioal fine pattern formation at AlGaAs/GaAs interface by Zn implantation, J.Appl.Phys., Vol. 54, pp. 1634, 1983.
• T.Ugumori, Y.Aoyagi, Y.Segawa, S.Namba. Determination of reaction constant of exciton-exciton collision by absorption Measurement, Jpn.J.Appl.Phys., Vol. 21, pp. 1588, 1982.
• Y.Aoyagi, Y.Segawa, M.Inami, S.Namba. High-power sub picosecond pulse generation in near-IR region by cavity-dumped passive and synchronous hybrid mode locking system, Jpn.J.Appl.Phys., Vol. 21, pp. 1104, 1982.
• Y.Aoyagi, Y.Segawa, S.Namba. Tunable sub picosecond pulse generation in near-IR region from OX-725 dye laser by passive and synchronous hybrid mode locking method, Jpn.J.Appl.Phys., Vol. 20, pp. 1595, 1982.
• Y.Aoyagi, Y.Segawa, S.Namba. Determination of diffusion coefficients of exciton and excitonic molecule in CuCl by picosecond transient grating spectroscopy, Phys.Rev., Vol. B25, pp. 1453, 1982.
• Y.Aoyagi, Y.Segawa, S.Namba, T.Shara, H.Nishihara, H.Gamo. Dynamic behavior of photo darkening process in As2S3 charocogenide glass, Phys.Stat.Sol., Vol. (a)67, pp. 669, 1981.
• Y.Segawa, Y.Aoyagi, S.Namba. Dynamic of cold polariton near a bottleneck region in CuCl, Solid.Stat.Commun., Vol. 39, pp. 535, 1981.
• Y.Aoyagi, Y.Segawa, T.Baba, S.Namba. Tunable picosecond transient grating method to determine the diffusion constants of excitons and excitonic molecules, Proceeding of SPIE, Vol. 240, pp. 230, 1980.
• K.Murakami, M.Kawabe, K.Gamo, S.Namba, Y.Aoyagi. Dynamic behavior of picosecond pulsed laser annealing in ion-implanted Si, J.Phys.Soc.Japan,Suppl.A., Vol. 49, pp. 1303, 1980.
• Y.Segawa, Y.Aoyagi, T.Baba, S.Namba. Determination of dispersion curves of excitonic polaritons in CdS, J.Phys.Soc.Japa,Suppl., Vol. 49, pp. 389, 1980.
• K.Murakami, K.Gamo, M.Kawabe, S.Namba, Y.Aoyagi. Dynamic behavior of 30-ps pulsed-laser annealing in ion-implanted Si, 2nd International Conference in Boston, 1979.
• Y.Segawa, Y.Aoyagi, O.Nakagawa, K.Azuma, s.Namba. Luminescence and Raman process under resonant two photon excitation in CuCl, J.Luminescence, Vol. 18/19, pp. 262, 1979.
• Y.Segawa, Y.Aoyagi, S.Namba. Anomalously slow group velocity of upper branch polariton in CuCl, Solid stat.Commun., Vol. 32, pp. 229, 1979.
• K.Murakami, K.Gamo, M.Kawabe, S.Namba, Y.Aoyagi. Dynamic behavior of mode-locked Nd:YAG laser annealing in ion implanted Si,GaAs and Gap, Appl.Phys.Letters, Vol. 35, pp. 628, 1979.
• K.Murakami, K.Gamo, M.Kawabe, S.Namba, Y.Aoyagi. Dynamic behavior of 30-ps pulsed-laser annealing in ion-implanted Si, Jpn.J.Appl.Phys., Vol. 18, pp. 2311, 1979.
• K.Murakami, K.Gamo, M.Kawabe, S.Namba, Y.Aoyagi. Dynamic behavior of pulsed-laser annealing in ion-implanted silicon, Phys.Letters., Vol. 70A, pp. 332, 1979.
• K.Azuma, O.Nakagawa, Y.Segawa, Y.Aoyagi, S.Namba. Tunable picosecond UV dye laser pumped by he third harmonic of a Nd:YAG laser, Jpn.J.Appl.Phys., Vol. 18, pp. 209, 1979.
• 上田　修, 青柳克信, 瀬川勇三郎, 難波　進. ﾓｰﾄﾞ同期YAGﾚｰｻﾞｰのﾊﾟﾙｽ圧縮, ﾚｰｻﾞｰ研究, Vol. 6, pp. 409, 1979.
• 佐野一雄, 青柳克信, 難波　進. ｲｵﾝｴｯﾁﾝｸﾞ法で作られたﾌﾞﾚｰｽﾞﾄﾞﾎﾛｸﾞﾗﾌｨｯｸｸﾞﾚｰﾃｨﾝｸﾞの光学的特性, 応用物理, Vol. 48, pp. 539, 1979.
• Y.Aoyagi, K.Sano, S.Namba. High spectroscopic qualities in blazed ion-etched holographic gratings, Opt.commun., Vol. 29, pp. 253, 1979.
• 東　健策, 中川　修, 瀬川勇三郎, 青柳克信. Nd:YAGﾚｰｻﾞｰ励起による紫外可変波長ﾋﾟｺ秒色素ﾚｰｻﾞｰ, ﾚｰｻﾞｰ研究, Vol. 6, pp. 310, 1978.
• K.Murakami, K.Gamo, S.Namba, M.Kawabe, Y.Aoyagi, Y.Akasaka. Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reference, 1st International Conference in Boston, 1978.
• K.Murakami, K.Gamo, jS.Namba, M.Kawabe, Y.Aoyagi, Y.Akasaka. Dynamic behaviors of pulsed laser annealing in ion-implanted silicon studied by measuring the optical reflectance, Proceeding of Laser-Solid Interaction and Laser Processing Symposium,Boston, 1978.
• Y.Segawa, Y.Aoyagi, K.Azuma, S.Namba. Direct observation of polariton velocity in CuCl, solid Sstate Commun., Vol. 28, pp. 853, 1978.
• Y.Segawa, Y.Aoyagi, O.Nkagawa, K.Azuma, S.Namba. Raman and luminescence processed under the resonant two photo excitation of an excitonic molecule in CuCl, Solid State Commun., Vol. 27, pp. 785, 1978.
• S.Konishi, Y.Aoyagi, S.Namba. Optical pulse generation from FM laser using gain dispersion, Opt.Commun., Vol. 22, pp. 358, 1977.
• Y.Aoyagi, S.Namba. Tunable picosecond pulse source using distributed feedback laser, Opt.Commun., Vol. 23, pp. 330, 1977.
• 佐野一雄, 青柳克信, 難波　進. ｲｵﾝｴｯﾁﾝｸﾞ法でﾌﾞﾚｰｽﾞされたﾎﾛｸﾞﾗﾌｨｯｸｸﾞﾚｰﾃｨﾝｸﾞの制作, 分光研究, Vol. 26, pp. 327, 1977.
• y.Aoyagi, S.Namba. Blazing of holographic grating by ion etching technique, Jpn.J.Appl.Phys., Vol. 15, pp. 721, 1976.
• Y.Aoyagi, S.Namba. Blazed ion-etched holographic gratings, Optical Acta, Vol. 23, pp. 701, 1976.
• T.Aoyagi, Y.Aoyagi, S.Namba. High-efficiency blazede grating couplers, Appl.Phys.Letters, Vol. 29, pp. 303, 1976.
• T.Aoyagi, Y.Aoyagi, S.Namba. Highly collimated laser beam from tunable distributed feed back dye laser, Jpn.J.Appl.Phys., Vol. 15, 1976.
• T.Aoyagi, Y.Aoyagi, S.Namba. Hight efficient blazed grating couplers, J.Opt.Soc.Am., Vol. 66, pp. 292, 1976.
• Y.Aoyagi, S.Namba. Electron-beam excited DFB laser in CdS, Appl.Phys.Letters, Vol. 26, pp. 24, 1975.
• Y.Aoyagi, T.Aoyagi, S.Namba. Tunable distributed feedback dye laser, Appl.Phys Letters, Vol. 27, pp. 687, 1975.
• 青柳克信, 青柳　孝, 難波　進. 可変波長DFB色素レーザー, ﾚｰｻﾞｰ研究, Vol. 3, pp. 28, 1975.
• Y.Aoyagi, S.Namba. Wavelenght control of thin film DFB laser by changing film thickness, Jpn.J.Appl.Phys., Vol. 13, pp. 1031, 1974.
• Y.Aoyagi, S.Namba. Distributed feedback lawer in CdS under electron beam excitation, Jpn.J.Appl.Phys.Suppl., Vol. 44, pp. 39, 1974.
• Y.Aoyagi, S.Namba. Distributed feedback laser in CdS, Proceeding of International Electron Devices Meeting, pp. 91, 1974.
• Y.Aoyagi, S.Namba. Laser oxcillation in simple corrugated optical wave guide, Appl.Phys.Letters., Vol. 24, 1974.
• Y.Aoyagi, S.Namba. Temperature tuning of 4-methylumbelliferon laser, Jpn.J.Appl.Phys., Vol. 12, pp. 624, 1973.
• Y.Aoyagi, K.Masuda, S.Namba. Drift mobility measurements in cpoper phtalocyanie single crystals, Mol.Cryst.and Liq.Cryst., Vol. 22, pp. 301, 1973.
• Y.Aoyagi, K.Masuda, S.Namba. Explanation of light-intensity dependence of photoconductivity in zinc phthalocyanine, J.Appl.Phys., Vol. 43, pp. 249, 1972.
• Y.Aoyagi, K.Masuda, S.Namba. Electrical and magnetic properties of phtalocyanie iodine charge transfer complex, J.Phys.Soc Japan, Vol. 31, pp. 524, 1971.
• Y.Aoyagi, K.Masuda, S.Namba. Electrical Conduction in Phthalocyanie Single Crystals, J.Phys.Soc.Japan, Vol. 31, pp. 164, 1971.
• Y.Aoyagi, K.Masuda, S.Namba. Electrical Conduction in Phthalocyanine Single Crystals, Proc.of the 5th Molecular Crystal Symposium, 1970.
• Y.Aoyagi, K.Masuda, S.Namba. Intensity dependence of photoconductivity in zinc phtalocyanie single crystals, Sci.Papere of Inst.Phys.Chem.Res., Vol. 63, pp. 71, 1969.
• Y.Aoyagi, K.Masuda, S.Namba. Electronspin resonance3 in diilluted copper phthalocyanie, J.Phays.Soc.Japan, Vol. 23, pp. 1188, 1967.
• M.Kawabe, K.Masuda, S.Namba, T.Yamaguchi, Y.Aoyagi. Uniaxial stress effects on electrical conductivity of DPPH single crystal, J.Phys.Soc.Japan, Vol. 23, pp. 394, 1966.

著書

• 青柳克信, 南不二雄, 吉野淳二, 梶川浩太郎. 先端材料光物性, コロナ社, Feb. 2008.
• 青柳克信. ナノテクノロジーと量子エレクトロニクス, レーザー研究, レーザー研究, Vol. 32, No. 2, pp. 75, 2004.
• 青柳克信. ﾅﾉｽﾍﾟｰｽの不思議な世界, 工業調査会, 工業調査会, Vol. 45, pp. 129, 1997.
• 青柳克信. 表面のｱﾄﾑﾌﾟﾛｾｽ, 学会出版ｾﾝﾀｰ, 学会出版ｾﾝﾀｰ, pp. 147, 1995.
• Yoshinobu Aoyagi. Atomic Layer Epitaxy, Applied Surface Science, Applied Surface Science, Vol. 57, pp. 193, 1994.
• 青柳克信. ﾒｿﾞｽｺｯﾋﾟｸ現象の基礎, ｵｰﾑ社, ｵｰﾑ社, pp. 202, 1994.
• Yoshinobu Aoyagi. Microcrytalline Semiconductors:Materials science & Devices, Materials Research society, Materials Research society, 1993.
• Yoshinobu Aoyagi. Low Temperature Epitaxial Growth of Semiconductor, World Soientific Publishing Do.,Ltd., World Soientific Publishing Do.,Ltd., pp. 199, 1991.
• Yoshinobu Aoyagi. Atomic Layer Growth and Processing, Material Research Society, Material Research Society, pp. 121, 1991.
• 青柳克信. ｲﾝﾃﾘｼﾞｪﾝﾄﾏﾃﾘｱﾙ, ｼｰｴﾑｼｰ, ｼｰｴﾑｼｰ, pp. 152, 1991.
• 青柳克信. ｻﾌﾞﾐｸﾛﾝﾘｿｸﾞﾗﾌｨ総合技術試料集, ｻｲｴﾝｽﾌｫｰﾗﾑ社, ｻｲｴﾝｽﾌｫｰﾗﾑ社, pp. 497, 1985.
• Yoshinobu Aoyagi. Semiconductors Probed by Ultra Past Laser Spectroscopy, Academic Press, Academic Press, Vol. 10, pp. 329, 1984.
• Yoshinobu Aoyagi. Semiconductors Probed by Ultrafast laser spectroscopy, Academic press, Academic press, pp. 329, 1984.
• 青柳克信. 薄膜ﾊﾝﾄﾞﾌﾞｯｸ, ｵｰﾑ社, ｵｰﾑ社, pp. 848, 1983.
• Yoshinobu Aoyagi. Amorphous semiconductors , North-Holland Publishing Co., North-Holland Publishing Co., pp. 124, 1983.
• 青柳克信. 超微細加工各種ﾌﾟﾛｾｽ術の問題点と実用化, ｿﾌﾄ技研出版部, ｿﾌﾄ技研出版部, pp. 254, 1981.
• 青柳克信. 超微細加工先端技術, 経営ｼｽﾃﾑ研究所, 経営ｼｽﾃﾑ研究所, pp. 87, 1981.

国際会議発表 (査読なし・不明)

• Koji Kawasaki, Daisuke Yamazaki, Kazuo Tsutsui, Yoshinobu Aoyagi. Control of formation sites of self-assembling GaN dots by focused electron beam exposure, 1999 Mat. Res. Soc. Fall Meeting, Nov. 1999.

特許など

• 川崎宏治, 青柳克信, 北野　雅裕, 池田　善和. 真空加熱プレス機. 特許. 登録. 国立大学法人東京工業大学, 北野精機株式会社. 2007/01/30. 特願2007-018879. 2008/08/14. 特開2008-183587. 特許第5196795号. 2013/02/15 2013.
• 青柳克信, 川崎　宏治, 武内　道一. 窒化物系深紫外発光素子およびその製造方法. 特許. 公開. 国立大学法人東京工業大学, 独立行政法人理化学研究所. 2006/03/20. 特願2007-510466. 2006/10/05. 特再表2006-104063. 2006.
• 川崎宏治, 青柳克信, 歌野　和弘. レーザーリフトオフ法およびレーザーリフトオフ装置. 特許. 登録. 国立大学法人東京工業大学, 西進商事株式会社. 2005/11/28. 特願2005-342734. 2007/06/14. 特開2007-149988. 特許第4883991号. 2011/12/16 2011.
• 川崎　宏治, 青柳克信, 細野秀雄. AｌGaN系深紫外発光素子およびその製造方法. 特許. 公開. 国立大学法人東京工業大学. 2005/03/28. 特願2005-093028. 2006/10/12. 特開2006-278554. 2006.
• 青柳克信, 川崎宏治, 武内　道一(, 木下　亨. 窒化物半導体の製造方法. 特許. 登録. 国立大学法人東京工業大学, 独立行政法人理化学研究所, 株式会社トクヤマ. 2005/03/28. 特願2005-090952. 2006/10/12. 特開2006-278402. 特許第4544628号. 2010/07/09 2010.
• 青柳克信, 川崎宏治, 武内道一. 半導体成長用基板および半導体膜の製造方法. 特許. 公開. 国立大学法人東京工業大学, 独立行政法人理化学研究所, 株式会社トクヤマ. 2004/12/24. 特願2004-374976. 2006/07/13. 特開2006-185962. 2006.

学位論文

• フタロアニン有機半導体の電気伝導 ,  本文,  Doctor of Engineering,  大阪大学,  1972/--/--, 

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