論文

• An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima. Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma, Japanese Journal of Applied Physics, Volume 63, Number 6, 066503, June 2024.  公式リンク  
  
• Gen Nakada, Yoshiharu Kihara, Akira Yasui, Kuniyuki KAKUSHIMA, Hiroshi Nohira. Estimation of the band alignment of metal/AlScN interfaces by hard X-ray photoelectron spectroscopy, Japanese Journal of Applied Physics, Volume 63, Number 5, 05SP14, May 2024.
• Tomoya Tsutsumi, Kazuki Goshima, Yoshiharu Kirihara, Tatsuki Okazaki, Akira Yasui, Mitani Yuichiro, Kuniyuki KAKUSHIMA, Hiroshi Nohira. Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES, Apr. 2024.
• Yukimura Tokita, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Identification of compressive strain in thin ferroelectric Al1–xScxN films by Raman spectroscopy, Japanese Journal of Applied Physics, Volume 63, Number 4, 04SP31, Apr. 2024.  公式リンク  
  
• Reika Ota, Shinnosuke Yasuoka, Ryoichi Mizutani, Takahisa Shiraishi, Kazuki Okamoto, Kuniyuki Kakushima, Tomoyuki Koganezawa, Osami Sakata, Hiroshi Funakubo. Scalable ferroelectricity of 20-nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes, J. Appl. Phys., vol. 134, pp. 214103-1-6, Dec. 2023.
• Masaki Otomo, Masaya Hamada, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer, Japanese Journal of Applied Physics, IOP Publishing, Vol. 62, p. SC1015, Jan. 2023.  公式リンク  
  
• Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact, IEEE Journal of the Electron Devices Society, IEEE, Vol. 11, p. 15-21, Nov. 2022.  公式リンク  
  
• Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure, Scientific Reports, Vol. 12, pp. 17199, Oct. 2022.
• Taiga Horiguchi, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing, Japanese Journal of Applied Physics, Vol. 61, 075506, July 2022.
• M. Nishizawa, T. Hoshii, H. Wakabayashi, K. Tsutsui, Yoshiaki Daigo, Ichiro Mizushima, T. Yoda, K. Kakushima. Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate, Japanese Journal of Applied Physics, Vol. 61, SH1011, June 2022.
• Si-Meng Chen, Sung Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Edward Yi Chang, Kuniyuki KAKUSHIMA. GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation, Japanese Journal of Applied Physics, Volume 61, June 2022.
• Hei Wong, Kuniyuki KAKUSHIMA. On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node, Nanomaterials, 12, 10, 1739, May 2022.
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films, Japanese Journal of Applied Physics (JJAP), Vol. 61, May 2022.
• Atsuki Miyata, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure, Japanese Journal of Applied Physics, 61, SH, SH1005, Apr. 2022.
• Ryota Shibukawa, Sung Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films, Japanese Journal of Applied Physics, Volume 61, Apr. 2022.
• Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Y. Chang, Kuniyuki Kakushima. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement, Japanese Journal of Applied Physics (JJAP), Vol. 61, No. 2, Feb. 2022.
• Takamasa KAWANAGO, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya HOSHII, Kuniyuki Kakushima, Kazuo TSUTSUI, Hitoshi WAKABAYASHI. Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Takuya Hamada, Masaya Hamada, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Ryo Ono, Shinya Imai, Yuta Kusama, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Emi Kano, Nobuyuki Ikarashi, Hitoshi Wakabayash. Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.
• Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box, Journal of the Electron Devices Society (J-EDS), Vol. 9, p. 1117, Aug. 2021.
• Hei Wong, Jieqiong Zhang, HIROSHI IWAI, Kuniyuki KAKUSHIMA. Characteristic Variabilities of Subnanometer EOT La2O3 Gate Dielectric Film of Nano CMOS Devices, Nanomaterials, Vol. 11, No. 8, Aug. 2021.
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBA05, Apr. 2021.
• S-L. Tsai, T. Hoshii, H. Wakabayashi, K. Tsutsui, T-K. Chung, E. Chang, K. Kakushima. Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering, Applied Physics Letters, Vol. 118, No. 8, Page 82902, Feb. 2021.
• Junji Kataoka, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. A possible origin of the large leakage current in ferroelectric Al1-xScxN films, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 60, Page 30907, Feb. 2021.
• Jinhan Song, Atsuhiro Ohta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 60, Page 30901, Feb. 2021.
• Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi. Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH10, Feb. 2021.
• Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH05, Jan. 2021.
• Takuya Hamada, Shigetaka Tomiya, Tetsuya Tatsumi, Masaya Hamada, Taiga Horiguchi, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Sheet Resistance Reduction of MoS2 Film using Sputtering and Chlorine Plasma Treatment followed by Sulfur Vapor Annealing, Journal of the Electron Devices Society (J-EDS), Vol. 9, Page 278-285, Jan. 2021.
• Satoshi Igarashi, Yusuke Mochiduki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBH04, Jan. 2021.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation, Japanese Journal of Applied Physics (JJAP), Vol. 59, No. 10, Page 105501, Sept. 2020.
• Kentaro Matsuura, Masaya Hamada, Takuya Hamada, Haruki Tanigawa, Takuro Sakamoto, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo. Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 59, No. 8, Page 80906, Aug. 2020.
• Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto. Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs, IEEE Trans. On Semiconductor Manufactureing, Vol. 33, No. 2, pp. 159-165, May 2020.
• Haruki Tanigawa, Kentaro Matsuura, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks, Japanese Journal of Applied Physics (JJAP), Vol. 59, Apr. 2020.
• Jinan Song, Lyu Wei Lin, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Atomic Layer Deposition of Y2O3 Thin Films with a High Growth per Cycle by Ar Multiple Boost Injection, Japanese Journal of Applied Physics (JJAP), Vol. 59, Apr. 2020.
• Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin-ichi Nishizawa, Ichiro Omura, Toshiro Hiramoto. Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs, Japanese Journal of Applied Physics, Vol. 59, No. SG, Mar. 2020.
• Tomohiko Yamagishi, Atsushi Hori, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node, Japanese Journal of Applied Physics, Vol. 59, No. SG, Feb. 2020.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films, Japanese Journal of Applied Physics, Vol. 59, No. SG, Feb. 2020.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films, Jpn. J. Appl. Phys., Vol. 59, pp. SGGB06-1-6, Feb. 2020.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization, Journal of the Electron Devices Society (J-EDS), IEEE, Vol. 7, No. 1, pp. 1258-1263, Dec. 2019.
• Kuan Ning Huang, Yueh-Chin Lin, Jia Ching Lin, Chia Chieh Hsu, Jin Hwa Lee, Chia-Hsun Wu, Jing Neng Yao, Heng-Tung Hsu, Venkatesan Nagarajan, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai, Edward Yi Chang, Chao Hsin Chien. Study of E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator for power applications, Journal of Electronic Materials, Vol. 49, pp. 1348–1353, Nov. 2019.
• Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing, Applied Physics Letters, Vol. 115, p. 192404, Nov. 2019.
• Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI. Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates, Japanese Journal of Applied Physics, Vol. 58, No. 6, pp. 061006, June 2019.  公式リンク  
  
• Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout, Journal of the Electron Devices Society (J-EDS), vol. 8, pp. 1244-1250, Nov. 2018.
• K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration, IEEE Journal of the Electron Devices Society, IEEE, Vol. 6, pp. 1251 - 1257, Nov. 2018.  公式リンク  
  
• J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, N. Ikarashi, H. Wakabayashi, N. Ikarashi. Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing, Journal of the Electron Devices Society, Vol. 7, No. 1, p. 2, Oct. 2018.
• M. Toyama, T. Ohashi, K. Matsuura, J. Shimizu, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing, JPN J APPL PHYS, 57, 07MA04, June 2018.
• Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima. Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors, Microelectronics Reliability, vol. 84, pp. 248-252, May 2018.
• Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakaw, Kuniyuki Kakushima. Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing, Microelectronics Reliability, vol. 84, pp. 226-229, May 2018.
• Akira Nakajima, Shunsuke Kubota, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Shin-ichi Nishizawa, Hiromichi Ohashi. GaN-based CMOS Inverter with Normally-off P- and N-channel MOSFETs in GaN/AlGaN/GaN Platform, IET Power Electronics, Vol. 11, No. 4, pp. 689-694, Apr. 2018.
• N. Hayakawa, Iriya Muneta, Takumi Ohashi, Kenntarou Matsuura, Junnichi Shimizu, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Hitoshi Wakabayashi. Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control, Japan Journal of Applied Physics, IOP Publishing, Vol. 57, 04FP13, Mar. 2018.  公式リンク  
  
• K. Matsuura, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization, Journal of Electrical Materials, Springer US, Vol. 47, No. 7, pp. 3497, Mar. 2018.
• Kazuo Tsutsui, Tomohiro Matsushita, Kotaro Natori, Takayuki Muro, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography, Nano Letters, Vol. 17, pp. 7533-7538, Nov. 2017.
• Yueh Chin Lin, Yu Xiang Huang, Gung Ning Huang, Chia Hsun Wu, Jing Neng Yao, Chung Ming Chu, Shane Chang, Chia Chieh Hsu, Jin Hwa Lee, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai, Edward Yi Chang. Enhancement-Mode GaN MIS-HEMTs with LaHfOx Gate Insulator for Power Application, IEEE Electron Device Letters, Vol. 38, No. 8, pp. 1101-1104, Aug. 2017.
• "K. Kakushima", "T. Seki", "H. Wakabayashi", "K. Tsutsui", "H. Iwai". Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates, Vacuum, Vol. 149, pp. 14-18, June 2017.
• Takumi Ohashi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness, Applied Physics Express, IOP Publishing, Vol. 10, Mar. 2017.  公式リンク  
  
• "Jun’ichi Shimizu", "Takumi Ohashi", "Kentaro Matsuura", "Iriya Muneta", "Kuniyuki Kakushima", "Kazuo Tsutsui", "Hitoshi Wakabayashi". High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs, Japanese Journal of Applied Physics (JJAP), Vol. 56, No. 4S, 2017.
• "R. Miyazawa", "H. Wakabayashi", "K. Tsutsui", "H. Iwai", "K. Kakushima". Photovoltaic Characteristics of Ultra-thin Single Crystalline Silicon Solar Cells, International Journal of High Speed Electronics and Systems (IJHSES), Vol. 25, No. 1-2, Page 1640008(7pages), Sept. 2016.
• "J. Chen", "H. Wakabayashi", "K. Tsutsui", "H. Iwai", "K. Kakushima". Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current, Microelectronic Reliability, Vol. 63, pp. 52-55, Aug. 2016.
• "M.S. Hadi", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "H. Iwai", "K. Kakushima". Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes, Microelectronics Reliability, Vol. 63, pp. 42-45, Aug. 2016.
• "Tomoyuki Suzuki", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Hiroshi Iwai", "Kuniyuki Kakushima". Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes with Ideal Characteristics, IEEE Electron Device Letters (EDL), Vol. 37, No. 5, pp. 618-620, May 2016.
• Yusuke Takei, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai. Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors, Japanese Journal of Applied Physics, Vol. 55, No. 4, Apr. 2016.
• "J. Chen", "T. Kawanago", "H. Wakabayashi", "K. Tsutsui", "H. Iwai", "D. Nohata", "H. Nohira", "K. Kakushima". La2O3 gate dielectrics for AlGaN/GaN HEMT, Microelectronics Reliability, Vol. 60, pp. 16-19, 2016.
• T. Ohashi, K. Suda, S. Ishihara, N. Sawamoto, S. Yamaguchi, K. Matsuura, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai, A. Ogura, H. Wakabayashi. Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs, Japan Journal of Applied Physics, Vol. 54, No. 4S, Mar. 2015.
• "Yusuke Takei", "Masayuki Kamiya", "Kazuo Tsutsui", "Wataru Saito", "Kuniyuki Kakushima", "Hitoshi Wakabayashi", "Yoshinori Kataoka", "Hiroshi Iwai". Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers, Physica Status Solidi A, Vol. 212, No. 5, pp. 1104-1109, Feb. 2015.
• "Mokh Hadi", "Shinichi Kano", "Kuniyuki Kakushima", "Yoshinori Kataoka", "Akira Nishiyama", "Nobuyuki Sugii", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Kenji Natori", "Hiroshi Iwai". A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer, Semiconductor Science and Technology, Vol. 29, No. 11, Oct. 2014.
• "Y. Wu", "H. Hasegawa", "K. Kakushima", "K. Ohmori", "T. Watanabe", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "Y. Kataoka", "K. Natori", "K. Yamada", "H. Iwai". A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability, Microelectronics Reliability, Vol. 54, No. 5, pp. 899-904, May 2014.
• "Yusuke Takei", "Mari Okamoto", "Wataru Saito", "Kazuo Tsutsui", "Kuniyuki Kakushima", "Hitoshi Wakabayashi", "Yoshinori Kataoka", "Hiroshi Iwai". Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures, ECS Transactions, Vol. 61, No. 4, pp. 265-270, May 2014.
• "Chunmeng Dou", "Tomoya Shoji", "Kazuhiro Nakajima", "Kuniyuki Kakushima", "Parhat Ahmet", "Yoshinori Kataoka", "Akira Nishiyama", "Nobuyuki Sugii", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Kenji Natori", "Hiroshi Iwai". Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement, Microelectronics Reliability, Vol. 54, pp. 725-729, Apr. 2014.
• "T. Kawanago", "K. Kakushima", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "H. Iwai". Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT, IEEE Transaction on Electron Devices(T-ED), Vol. 61, No. 3, pp. 785-791, Feb. 2014.
• "K. Tuokedaerhan", "K. Kakushima", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "H. Iwai". Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain, Applied Physics Letters (APL), Vol. 104, No. 2, Jan. 2014.
• Miranda Enrique, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J.Sune, HIROSHI IWAI. Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown, [Microelectronic Engineering, Vol. 109, pp. 322-325, Sept. 2013.
• "K. Tuokedaerhan", "R. Tan, K. Kakushima", "P. Ahmet", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "T. Hattori", "H. Iwai". Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application, Applied Physics Letters (APL), Vol. 103, Sept. 2013.
• Miranda Enrique, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Analysis and Simulation of the Postbreakdown I-V Characteristics of n-MOS Transistors in the Linear Response Regime, IEEE ELECTRON DEVICE LETTERS, Vol. 34, No. 6, pp. 798-800, June 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, takeo hattori, Kenji Natori, HIROSHI IWAI. Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure, Solid-State Electronics, Vol. 84, pp. 53-57, June 2013.
• DARYOUSH ZADEH, Hiroshi Oomine, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, Hiroshi Nohira, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode, Solid-State Electronics, Vol. 82, pp. 29-33, Apr. 2013.
• Y. Wu, 竇春萌, F. Wei, Kuniyuki KAKUSHIMA, 大毛利健治, パールハットアヘメト, T. Watanabe, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Keisaku Yamada, 片岡好則, takeo hattori, HIROSHI IWAI. Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability, Japanese Journal of Applied Physics, Vol. 52, No. 4S, pp. 04CC28-1-04CC28-5, Apr. 2013.
• Miranda Enrique, shinichi kano, 竇春萌, J. Sune, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Effect of an ultrathin SiO2 interfacial layer on the hysteretic current-voltage characteristics of CeOx-based metal-insulator-metal structures, Thin Solid Films, Vol. 533, pp. 38-42, Apr. 2013.
• Tadashi Ishida, Kuniyuki Kakushima, Hiroyuki Fujita. Degradation Mechanisms of Contact Point during Switching Operation of MEMS Switch, JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, IEEE, Vol. 22, pp. 828-834, Mar. 2013.
• Miyuki Kouda, 鈴木 拓也, Kuniyuki KAKUSHIMA, Ahmet Parhat, HIROSHI IWAI, 安田哲二. Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition, Japanese Journal of Applied Physics, Vol. 51, pp. 121101-1-121101-5,, Dec. 2012.
• H Wong, B.L. Yang, S. Dong, HIROSHI IWAI, Kuniyuki KAKUSHIMA, Ahmet Parhat. Current conduction and stability of CeO2/La2O3 stacked gate dielectric, APPLIED PHYSICS LETTERS, Vol. 101, 233507, Dec. 2012.
• Tadashi Ishida, Kuniyuki KAKUSHIMA, Teruyasu Mizoguchi, Hiroyuki Fujita. Role of dislocation movement in the electrical conductance of nanocontacts, Scientific Reports, Nature publishing group, Vol. 2, Sept. 2012.
• S.-L. Siu, W.-S. Tam, H Wong, C.-W. Kok, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors, Microelectronics Realiability, Vol. 52, pp. 1606-1609, Aug. 2012.
• B.L. Yang, H Wong, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Improving the electrical characteristics of MOS transistors with CeO2/ La2O3 stacked gate dielectric, Microelectronics Realiability, Vol. 52, pp. 1613-1616, Aug. 2012.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs, Solid-State Electronics, Vol. 74, pp. 2-6, Aug. 2012.
• マイマイティ マイマイティレャアティ, 久保田透, 関拓也, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 片岡好則, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors, Microelectronics Reliability, Vol. 52, No. 6, pp. 1039-1042, June 2012.
• unknown unknown, W. Yasenjiang, Kuniyuki KAKUSHIMA, Ahmet Parhat, M. Geni, Kenji Natori, HIROSHI IWAI. Influence of strained drain on performance of ballistic channel devices, Semiconductor Science and Technology, Vol. 27, No. 5, pp. 055001-1-5, May 2012.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Natori, HIROSHI IWAI. Gate Capacitance Modeling and Diamater-Drpendent Performance of Nanowire MOSFETs, IEEE Transactions on Electron Deviices, Vol. 59, No. 4, pp. 1037-1045, Apr. 2012.
• マイマイティ マイマイティレャアティ, Miyuki Kouda, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, 片岡好則, 西山彰, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Valance number transition and silicate formation of cerrium oxide on Si(100), Vacuum, Vol. 86, No. 10, pp. 1513-1516, Apr. 2012.
• C. Dou, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer, Microelectronics Reliability, Vol. 32, No. 4, pp. 688-691, Apr. 2012.
• W. Feng, R. Hettiarachchi, Soshi Sato, Kuniyuki KAKUSHIMA, M. Niwa, HIROSHI IWAI, Keisaku Yamada, Kenji Ohmori. Advantages of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties, Japanese Journal of Applied Physics, Vol. 51, pp. 04DC06-1-04DC06-5, Apr. 2012.
• マイマイティ マイマイティレャアティ, Miyuki Kouda, Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 片岡 好則, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs, Semiconductor Science and Technology, Vol. 27, No. 4, Mar. 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2, IEEE ELECTRON DEVICE LETTERS, Vol. 33, No. 3, pp. 423-425, Mar. 2012.
• H Wong, B.L. Yang, Kuniyuki KAKUSHIMA, Ahmet Parhat, HIROSHI IWAI. Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics, Vacuum, Vol. 86, No. 7, pp. 990-993, Feb. 2012.
• H.D. Trinh, Yueh-Chin Lin, H.C. Wang, C.H. Chang, Kuniyuki KAKUSHIMA, HIROSHI IWAI, Takamasa Kawanago, Y.G. Lin, C.M. Chen, Y.Y.Wong, G.N. Huang, M. Hudait, E.Y. Chang. Effect of Postdeposition, Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors, Applied Physics Express, Vol. 5, No. 2, pp. .021104-1-3, Feb. 2012.
• H Wong, B.L. Yang, Kuniyuki KAKUSHIMA, Ahmet Parhat, HIROSHI IWAI. Effects of aluminum doping on lanthanum oxide gate dielectric films, Vacuum, Vol. 86, No. 7, pp. 929-932, Feb. 2012.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature, IEEE Transactions on Electron Devices, Vol. 59, No. 2, pp. 269-276, Feb. 2012.
• Takamasa Kawanago, 鈴木 拓也, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process, Solid-State Electronics, Vol. 68, pp. .68-72, Feb. 2012.
• Miranda Enrique, shinichi kano, C. Dou, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Nonlinear conductance quantization effects in CeO/SiO-based resistive switching devices, APPLIED PHYSICS LETTERS, Vol. 101, 01291, 2012.
• Miranda Enrique, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown, Microelectronics Reliability, Vol. 52, pp. 1909-1912, 2012.
• Soshi Sato, Kuniyuki KAKUSHIMA, Kenji Ohmori, KENJI NATORI, Keisaku Yamada, HIROSHI IWAI. Electrical characteristics of asymmetrical silicon nanowire field-effect transistors, APPLIED PHYSICS LETTERS, Vol. 99, No. 22, pp. 223518-1-3, Nov. 2011.
• Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, Kenji Ohmori, KENJI NATORI, Keisaku Yamada, HIROSHI IWAI. Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure, Solid-State Electronics, Vol. 65-66, pp. 2-8, Nov. 2011.
• Kiichi Tachi, N. Vulliet, S. Barraud, Kuniyuki KAKUSHIMA, HIROSHI IWAI, S. Cristoloveanu, T. Ernst. Influence of source/drain formation process on resistance and effective mobility for scaled multi-channel MOSFET”, Solid-State Electronics, Vol. 65-66, pp. 16-21, Nov. 2011.
• unknown unknown, W. Yasenjiang, Kuniyuki KAKUSHIMA, Ahmet Parhat, M. Geni, KENJI NATORI, HIROSHI IWAI. Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n+–i–n+ Diode, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 104301-1-3, Oct. 2011.
• Miyuki Kouda, Kenji Ozawa, Kuniyuki KAKUSHIMA, Ahmet Parhat, HIROSHI IWAI, ト部友二, 安田哲二. Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PA06-1-4, Oct. 2011.
• Miyuki Kouda, Kenji Ozawa, Kuniyuki KAKUSHIMA, Ahmet Parhat, HIROSHI IWAI, ト部友二, 安田哲二. Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PA06-1-4, Oct. 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5nm, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PA04-1-4, Oct. 2011.
• 山下晃司, 沼尻 侑也, M. Watanabe, Kuniyuki KAKUSHIMA, HIROSHI IWAI, Hiroshi Nohira. Study of High-k/Ino.53Ga.0.47As interface by Hard X-ray Photoemission Spectroscopy, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PD02-1-5, Oct. 2011.
• 来山大祐, 久保田透, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. [ 183] D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer”, Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PA05-1-5, Oct. 2011.
• ダリューシュザデ, Takashi Kanda, 山下晃司, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PD03-1-4, Oct. 2011.
• H. Wong, Y. B.L, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Subthreshold Characteristics of MOS Transistors With CeO(2)/La(2)O(3) Stacked Gate Dielectric, IEEE ELECTRON DEVICE LETTERS,, Aug. 2011.
• 来山大祐, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2 O3, Microelectronic Engineering, Vol. 88, No. 7, pp. 1330-1333, July 2011.
• ダリューシュザデ, Kuniyuki KAKUSHIMA, Takashi Kanda, Y.C.Lin, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, E.Y.Chang, KENJI NATORI, takeo hattori, HIROSHI IWAI. Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques, Microelectronic Engineering, Vol. 88, No. 7, pp. 1109-1112, July 2011.
• Soshi Sato, Wei Li, Kuniyuki KAKUSHIMA, Kenji Ohmori, KENJI NATORI, Keisaku Yamada, HIROSHI IWAI. Eatraction of additional interfacial states of silicon nanowire field-effect transistors, APPLIED PHYSICS LETTERS, Vol. 98, June 2011.
• H.D. Trinh, G. Brammertz, E.Y. Chang, C.I. Kuo, C.Y. Lu, Y.C. Lin, H. Q. Nguyen, Y. Y. Wong, B.T. Tran, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Electrical Characterization of Al2O3 /n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments, IEEE ELECTRON DEVICE LETTERS, Vol. 32, No. 6, June 2011.
• Kiichi Tachi, S. Barraud, Kuniyuki KAKUSHIMA, HIROSHI IWAI, S. Cristoloveanu, T. Ernst. Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs, Microelectronics Reliability, Vol. 51, pp. 885-888, May 2011.
• HIROSHI IWAI, KENJI NATORI, Kenji Shiraishi, 岩田 潤一, 押山 淳, Keisaku Yamada, Kenji Ohmori, Kuniyuki KAKUSHIMA, Ahmet Parhat. Si nanowire FET and its modeling, Science China, Vol. 54, No. 5, pp. 1004-1011, May 2011.
• Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, Kenji Ohmori, KENJI NATORI, Keisaku Yamada, HIROSHI IWAI. Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors, Microelectronics Reliability, Vol. 51, pp. 879-884, May 2011.
• DARYOUSH ZADEH, Soshi Sato, Kuniyuki KAKUSHIMA, A. Srivastava, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, C.K. Sarkar, HIROSHI IWAI. Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise, Microelectronics Reliability, Vol. 51, pp. 746-750, Apr. 2011.
• Soshi Sato, Kenji Ohmori, Kuniyuki KAKUSHIMA, Ahmet Parhat, KENJI NATORI, Keisaku Yamada, HIROSHI IWAI. Experimental Characterization of Quasi-Fermi Pontential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry, Applied Physics Express, Vol. 4, No. 044201, Apr. 2011.
• K. Shubhakar, K.L. Pey, S.S. Kushvaha, S.J. O'Shea, N. Raghavan, M. Bosman, Miyuki Kouda, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy, Applied Physics Letters, Vol. 98, No. 072902, Feb. 2011.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Selection of rare earth silicates for highly scaled gate dielectrics, Microelectronic Engineering, Vol. 87, No. 10, pp. 1868-1871, Oct. 2010.
• Hiroshi Shimomura, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Equivalent Noise Temperature Representation for Scaled MOSFETs, IEICE TRANSACTIONS on Electronics, Vol. E93-C, No. 10, pp. 1550-1552, Oct. 2010.
• Yeonghun Lee, KENJI NATORI, HIROSHI IWAI, Kuniyuki KAKUSHIMA, Kenji Shiraishi. Size-Dependent Properties of Ballistic Silicon Nanowire Field Effect Transistors, Journal of Applied Physics, Vol. 107, No. 11, pp. 113705, June 2010.
• Kuniyuki KAKUSHIMA, Kiichi Tachi, M.Adachi, Koichi Okamoto, Soshi Sato, Jaeyeol Song, Takamasa Kawanago, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Interface and electrical properties of La-silicate for direct contact of high-k with silicon, Solid-State Electronics, Vol. 54, pp. 715-719, June 2010.
• M.K. Bera, Jaeyeol Song, Ahmet Parhat, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 25, No. 6, 065008, May 2010.
• Hiroshi Shimomura, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs, IEICE TRANSACTIONS on Electronics, Vol. E93-C, No. 5, pp. 678-684, May 2010.
• M.K.Bera, Jaeyeol Song, Ahmet Parhat, Kuniyuki KAKUSHIMA, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 25, No. 6, 065008, May 2010.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. SrO capping effect for La2O3/ Ce-Silicate gate dielectrics, Microelectronics Reliability 50, pp. 356-359, Mar. 2010.
• Yusuke Kobayashi, Kuniyuki KAKUSHIMA, Ahmet Parhat, V.Rampogal Rao, KAZUO TSUTSUI, HIROSHI IWAI. Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness, Microelectronics Reliability 50, pp. 332-337, Mar. 2010.
• Kuniyuki KAKUSHIMA, M. Nakagawa, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Radio-frequency performance of a sub-100 nm metal-oxide field-effect transistor with high-k gate dielectric, Semiconductor Science and Technology, Vol. 25, No. 4, 045029, 2010.
• Kuniyuki KAKUSHIMA, Tomotsune Koyanagi, Kiichi Tachi, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric, Solid-State Electronics, Vol. 54, pp. 720-723, 2010.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Shiraishi, KENJI NATORI, HIROSHI IWAI. Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors, Applied Physics Letters97, 1, 2010.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Shiraishi, KENJI NATORI, HIROSHI IWAI. Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors, Applied Physics Letters97, 1, ????,2010, 97, 1, 2010.
• H. Wong, HIROSHI IWAI, Kuniyuki KAKUSHIMA, B.L. Yang, P.K. Chu. XPS Study of the Bonding Properties of Lanthanum Oxide/Silicon Interface with a Trace Amount of Nitrogen Incorporation, Journal of Electrochemical Society, G49-G51, 2010.
• Kuniyuki KAKUSHIMA, Kiichi Tachi, Jaeyeol Song, Soshi Sato, Hiroshi Nohira, E. Ikenaga, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film, JOURNAL OF APPLIED PHYSICS, [ 145] K. Kakushima, K. Tachi K, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K.Tsutsui, N. Sugii, T.Hattori, H. Iwai, “Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film”, JOURNAL OF APPLIED PHYSICS, Vol.106, 2009, Vol. 106, 2009.
• S.-L. Siu, H. Wong, W.-S. Tam, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors, Microelectronics Reliability, Vol. 49, pp. 387391, 2009.
• Tomotsune Koyanagi, Kiichi Tachi, Koichi Okamoto, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation, Japanese Journal of Applied Physics, Vol. 48, 2009.
• B Sen, H Wong, B.L. Yang, P.K. Chu, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation, Solid-State Electronics, Vol. 53, pp. 355-358, 2009.
• KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, PARHAT AHMET, HIROSHI IWAI. Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2, Microelectronic Engineering, Vol. 85, pp. 315-319, Feb. 2008.
• D.S. Ang, Y.C. Ong, S.J. O'Shea, K.L. Pey, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Study of trap generation in the Sc2 O 3/La2O3/SiOxgate dielectric stack by scanning tunneling microscopy, APPLIED PHYSICS LETTERS, Vol. 93, No. 242904, 2008.
• D.S. Ang, Y.C. Ong, S.J. O'Shea, K.L. Pey, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Study of trap generation in the Sc2 O 3/La2O3/SiOxgate dielectric stack by scanning tunneling microscopy, APPLIED PHYSICS LETTERS, Vol. 93, No. 242904, 2008.
• Ahmet Parhat, 中川健太郎, Kuniyuki KAKUSHIMA, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack, Microelectronics Reliability, Vol. 48, pp. 1769–1771, 2008.
• KAZUO TSUTSUI, T Matsuda, M Watanabe, Cheng-Guo Jin, 佐々木雄一朗, Bunji Mizuno, E Ikenaga, Kuniyuki KAKUSHIMA, Ahmet Parhat, T Maruizumi, Hiroshi Nohira, takeo hattori, HIROSHI IWAI. Activated Boron and its Concentration Profiles in Heavily Doped Si Studied by Soft X-ray Photoelectron Spectroscopy and Hall Measurements, Journal of Applied Physics, Vol. 104, 093709, 2008.
• KAZUO TSUTSUI, T. Shiozawa, K. Nagahiro, Y. Ohishi, Kuniyuki KAKUSHIMA, Ahmet Parhat, N. Urushihara, M. Suzuki, HIROSHI IWAI. Improvement of Thermal Stability of Ni Silicide on N+-Si by Direct Deposition of Group III Element (Al, B) Thin Film at Ni/Si Interface, Microelectronic Engineering, Vol. 85, pp. 2000-2004, 2008.
• KAZUO TSUTSUI, Ruifei Xiang, K. Nagahiro, T. Shiozawa, Ahmet Parhat, Y. Okuno, M. Matsumoto, M. Kubota, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2, Microelectronic Engineering, Vol. 85, pp. 315-319, 2008.
• Reyes Joel Molina, A. Torres, W. Calleja, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Degradation and breakdown of W-La2O3 stack after annealing in N-2, JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 47, pp. 7076-7080, 2008.
• Kuniyuki KAKUSHIMA, K. Okamoto, M. Adachi, Kiichi Tachi, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion, SOLID-STATE ELECTRONICS, Vol. 52, pp. 1280-1284, 2008.
• Ahmet Parhat, Nakagawa Kentaro, Kuniyuki KAKUSHIMA, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack, Microelectronics Reliability 48, Vol. 48, pp. 1769–1771, 2008.
• N. Urushihara, S. Iida, N. Sanada, M. Suzuki, D.F. Paul, S. Bryan, Y. Nakajima, T. Hanajiri, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, HIROSHI IWAI. Three dimensional image construction and spectrum extraction from two dimensional elemental mapping in Auger electron spectroscopy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, Vol. 26, pp. 668-672, 2008.
• Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V.Ramgopal Rao, Parhat Ahmet, Hiroshi Iwai. Parasitic Effects in Multi-Gate MOSFETs, IEICE TRANS. ELECTRON, Vol. E90-C, No. 10, pp. 2051-2056, Oct. 2007.
• Soshi Sato, Kiichi Tachi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Thermal-stability improvement of LaON thin film formed using nitrogen radicals, Microelectronic Engineering, Vol. 84, pp. 1894-1897, 2007.
• Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Improvement of interfacial properties with interfacial layer in La2O3 / Ge structure, Microelectronic Engineering, Vol. 84, pp. 2336-2339, 2007.
• Takamasa Kawanago, Kiichi Tachi, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application, Microelectronic Engineering, Vol. 84, pp. 2335-2338, 2007.
• Y.C. Ong, D.S. Ang, K.L. Pey, S.J. O'Shea, K.E.J. Goh, C. Troadec, C.H. Thung, Takamasa Kawanago, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Bilayer gate dielectric study by scanning tunneling microscopy, APPLIED PHYSICS LETTERS, Vol. 91, pp. 102905,, 2007.
• K. Kakushima, T. Bourouina, T. Sarnet, G. Kerrien, D. Debarre, J. Boulmer, H. Fujita. Silicon Periodic Nano-structures Obtained By Laser Exposure Of Nano-wires, Microelectronics Journal, Vol. 36, pp. 629-633, 2005.
• Kuniyuki Kakushima, Toshiyuki Watanabe, Kouji Shimamoto, Takushi Gouda, Manabu Ataka, Hidenori Mimura, Yoshimasa Isono, Gen Hashiguchi, Yutaka Mihara, Hiroyuki Fujita. Atomic Force Microscope Cantilever Array for Parallel Lithography of Quantum Devices, Japanese Journal of Applied Physics, Vol. 43, pp. 4041-4044, 2004.

著書

• Hei Wong, Kenji Shiraishi, Kuniyuki KAKUSHIMA, HIROSHI IWAI. High-K Gate Dielectrics, Electronic Device Architectures for the Nano-CMOS Era, Pan Stanford Publishing Pte. Ltd., pp. 105-140, 2009.

国際会議発表 (査読有り)

• Ryosuke Kajikawa, Takamasa Kawanago, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs, International Conference on Solid State Devices and Materials, Sept. 2023.
• Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure, Intermag 2023, May 2023.
• Ryo Ono, Shinya Imai, Takamasa Kawanago, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Mar. 2023.  公式リンク  
  
• Shinya Imai, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi. Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Mar. 2023.  公式リンク  
  
• Shonosuke Kimura, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma, the International Workshop on Nitride Semiconductors 2022, Oct. 2022.
• R. Shibukawa, S. -L. Tsai, T. Hoshii, H. Wakbayashi, K. Tsutsui, K. Kakushima. Thermal stability of ferroelectric AlScN films, International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Kazuto Mizutani, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films, International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation, International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Mitsuki Nishizawa, T. Hoshii, H. Wakabayashi, K. Tsutsui, I. Mizushima, T. Yoda, K. Kakushima. Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer, International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Sho Sasaki, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Observation of ferroelectricity in atomic layer deposited AlN film, International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.
• Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd Down to 0.5 V Consisting of WSe2 n/p FETs, International Conference on Solid State Devices and Materials, Sept. 2021.
• Ryo Ono, Shinya Imai, Yuta Kusama, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi. Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region, International Conference on Solid State Devices and Materials, Sept. 2021.
• Takuya Hamada, Taiga Horiguchi, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi. Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering, Internatonal Conference on Solid State Devices and Materials, Sept. 2021.
• Masaya Hamada, Takuya Hamada, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Side-Contact Architecture for p/n-Stacked-Nano-Sheet ZrS2 2D-FETs Beyond 1-nm Technology Node, International Workshop on Junction Technology (IWJT2021), June 2021.
• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices, IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), pp. 217-219, Apr. 2021.
• Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Katsumi Satoh, Tomoko Matsudai, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto. 3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology, International Electron Devices Meeting (IEDM) 2020, Dec. 2020.
• S. Tsai, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Shigetaka Tomiya, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Kazuo Tsutsui, Hitoshi Wakabayashi. Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Sunglin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Thickness Scaling on Ferroelectric Al0.8Sc0.2N Films, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Satoshi Igarashi, Yusuke Mochiduki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack, International Conference of Solid State Devices and Materials (SSDM) 2020, Sept. 2020.
• Y. W. Lin, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Pulse deposition of Y2O3 films by Y(iPrCp)3 assisted by Ar boost technology, Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019), Nov. 2019.
• Jinhan Song, A. Ohta, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Electrical Characteristics of Atomic Layer Deposited Y-silicate Devices, Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019), Nov. 2019.
• H. Tanigawa, K. Matsuura, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi. Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks, Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019), Nov. 2019.
• T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka, T. Yokoya. Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites, T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka and T. Yokoya, Nov. 2019.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. 3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography, 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), Nov. 2019.
• Takuya Hoshii, Hiromasa Okita, Taihei Matsuhashi, Indraneel Sanyal, Yu-Chih Chen, Ying-Hao Ju, Akira Nakajima, Kuniyuki Kakushima, Hitoshi Wakabayashi, Jen-Inn Chyi, Kazuo Tsutsui. Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE, The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Nov. 2019.
• T. Hiramoto, T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohash. Switching of 3300V Scaled IGBT by 5V Gate Drive, ASICON (International Conference on ASIC), Oct. 2019.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing, Solid State Devices and Materials (SSDM2019), Sept. 2019.
• Tomohiko Yamagishi, Atsushi Hori, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET, Int. Conf. on Solide State Devices and Materials (SSDM2019), Sept. 2019.
• T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, S. Nshizawa, I. Omura, T. Hiramoto. Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs, Int. Conf. on Solide State Devices and Materials (SSDM2019), Sept. 2019.
• Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces, 13tu Int. Conf. on Nitride Semiconductor (ICNS), July 2019.
• Iriya Muneta, Naoki Hayakawa, Takanori Shirokura, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Ferromagnetic tunnel devices with two-dimensional layered material MoS2, Collaborative Conference on Materials Research (CCMR) 2019, June 2019.
• K. Matsuura, M. Hamada, T. Hamada, H. Tanigawa, T. Sakamoto, W. Cao, K. Parto, A. Hori, I. Muneta, T. Kawanago, K. Kakushima, K. Tsutsui, A. Ogura, K. Banerjee, H. Wakabayashi. Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration, Int. Workshop on Juction Technology (IWJT2019), June 2019.
• Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shin-Ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramo. 3300V Scaled IGBTs Driven by 5V Gate Voltag, 31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019), May 2019.
• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs, 31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019), May 2019.
• M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, K. Takeuchi, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, S. Nishizawa, I. Omura, T. Hiramoto. Turn-Off Loss Improvement by IGBT Scaling, Int. Conf. on Solide State Devices and Materials (SSDM2019), May 2019.
• Takeya Inoue, Takuya Hoshii, Takuo Kikuchi, Hidehiko Yabuhara, Kazuyuki Ito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Junichi Tonotani, Kazuo Tsutsui. Fundamental study on reducing on-resistance by introducing strain into silicon vertical power devices, 3rd Electron Devices Technology and Manufactureing Conference (EDTM2019), Mar. 2019.
• Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing, 3rd Electron Devices Technology and Manufactureing Conference (EDTM2019), Mar. 2019.
• T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto. Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss, International Electron Devices Meeting (IEDM2018), Dec. 2018.
• K. Sasaki, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, I. Mizushima, T. Yoda, K. Kakushima. Minority Carrier Lifetime Measurement for SiC Epitaxial Layer, The 5th Meeting on Advanced Power Semiconductors, Nov. 2018.
• Toyohiko Kinoshita, Tomohiro Matsushita, Takayuki Muro, Takuo Ohkochi, Hitoshi Osawa, Kouichi Hayashi, Fumihiko Matsui, Kazuo Tsutsui, Kotaro Natori, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Aya Taked, Kensei Terashim, Wataru Hosoda, Tetsuji Fukura, Yuukou Yano, Hirohkazu Fujiwara, Masanori Sunagawa, Hiromitsu Kato, Tamio Oguchi, Takanori Wakita, Yuuji Muraoka, Takayoshi Yokoya. Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites, 14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14), Oct. 2018.
• T. Sakamoto, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, Y. Suzuki, N. Ikarashi, H. Wakabayashi. Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct. 2018.
• M. Hamada, K. Matsuura, T. Sakamoto, H. Tanigawa, T. Ohashi, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi. Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct. 2018.
• Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigyo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Sinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately, 44th European Solid-State Circuits Conference (ESSDERC2018), Sept. 2018.
• Kazuya Hisatsune, Yoshihisa Takaku, Kohei Sasa, Takuya Hoshii, Iriya Muneta, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors, Int. Conf. on Sold State Devices and Materials (SSDM2018), Sept. 2018.
• I. Muneta, Danial B. Z., N. Hayakawa, K. Kakushima, K. Tsutsui, H. Wakabayashi. Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate, International School and Conference on Physics and Applications of Spin Phenomena in Solids (PASPS), Aug. 2018.
• K. Kakushima, T. Hoshii, M. Watanabe, N. Shigyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai. New methodology for evaluating minority carrier lifetime for process assessment, Symp. On VLSI Technology (VLSI2018), June 2018.
• K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, pp. 104-106, Mar. 2018.
• Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout, The 2nd Electron Devices Technology and Manufacturing Conference (EDTM2018), Mar. 2018.
• Suguru Tatsunokuchi, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, HIROSHI IWAI, K. Kakushima. Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure, China Semiconductor Technology International Conference (CSTIC2018), Mar. 2018.
• Kotaro Natori, Tatsuhiro Ogawa, Takuya Hoshii, Tomohiro Matsushia, Takayuki Muro, Toyohiko Kinoshita, Yoshitada Morikawa, Kuniyuki Kakushima, Fumihiko Matsui, Kouichi Hayashi, Hitoshi Wakabayashi, Kazuo Tsutsui. Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography, 11th Int. Symp. on Atomic Level Characterization (ALC'17), Dec. 2017.
• Suguru Tatsunokuchi, Iriya Muneta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima. Photovoltaic Properties of Lateral Si Nano Wall Solar Cells, 2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Tecnology (IWDTF 2017), Nov. 2017.
• M. Toyama, T. Ohashi, K. Matsuura, J. Shimizu, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing, Advanced Metallization Conference 2017: 27th Asian Session, Oct. 2017.  公式リンク  
  
• Takuya Hoshii, Rumi Takayama, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate, International Conference on Solid-State Devices and Materials (SSDM2017), Sept. 2017.
• N. Hayakawa, I. Muneta, T. Ohashi, K. Matsuura, J. Shimizu, K. Kakushima, K. Tsutsui, H. Wakabayashi. Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure, International Conference on Solid State Devices and Materials, Sept. 2017.
• J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, N. Ikarashi, H. Wakabayashi. Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET, IEEE Electron Device Technology and Manufacturing Conference (EDTM), 2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM), pp. 222-223, June 2017.  公式リンク  
  
• S. Hirano, J. Shimizu, K. Matsuura, T. Ohashi, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films, 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM), pp. 234-235, June 2017.  公式リンク  
  
• K. Kakushima, Yuta Ikeuchi, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, T. Kikuchi, S. Ishikawa. Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes, Int. Workshop on Junction Technology (IWJT2017), June 2017.
• K. Kakushima, T. Suzuki, T. Hoshii, I. Muneta, H. Wakabayashi, HIROSHI IWAI, Y. Aoki,H. Nohira Aoki, KAZUO TSUTSUI. Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes, Int. Workshop on Junction Technology (IWJT2017), June 2017.
• 岡田 泰典, 山口 晋平, 大橋 匠, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas, International Workshop on Junction Technology, June 2017.
• Y. M. Lei, T. Kaneko, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima, M. Furuhashi, S. Tomohisa, S. Yamakawa. Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors, 47th IEEE Semiconductor Interface Specialists Conference (SISC2016), Dec. 2016.
• Tomoyuki Suzuki, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Hiroshi Nohira, Kuniyuki Kakushima. Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode, 47th IEEE Semiconductor Interface Specialists Conference (SISC2016), Dec. 2016.
• K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai. Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT, 62th International Electron Devices Meeting (IEDM2016), p. 268, Dec. 2016.
• Y. Ikeuchi, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima, S.Ishikawa. Characteristics of Fe/pGaN Contact upon Annealing Process, 47th IEEE Semiconductor Interface Specialists Conference (SISC2016), Dec. 2016.
• J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi. High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC, International Conference on Solid State Devices and Materials, Sept. 2016.
• Akira Nakajima, Shunsuke Kubota, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Sin-ichi Nishizawa, Hiromichi Ohashi. Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs, 13th International Seminar on Power Semiconductors (ISPS), Aug. 2016.
• K. Matsuura, T. Ohashi, I. Muneta, S. Ishihara, N. Sawamoto, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi. Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film, Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC), 2016.
• A. Nakajima, S. Kubota, R. Kayanuma, K. Tsutsui, K. Kakushima, H. Wakabayashi, H. Iwai, S. Nishizawa, H. Ohashi. An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform, 2015 IEEE Compound Semiconductor IC Symposium (CSICS2015), Oct. 2015.
• Akira Nakajima, Shin-Ichi Nishizawa, Hiromichi Ohashi, Rei Kayanuma, Kazuo Tsutsui, Shunsuke Kubota, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai. GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform, The 27th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2015), May 2015.
• M. Okamoto, K. Kakushima, Y. Kataoka, K. Natori, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito. Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure, WiPDA, Oct. 2014.
• N. Nishizawa, T. Kawanago, K. Kakushima, H. Munekata. Formation of Ultra-thin, Crystalline AlOx Tunnel Barrier on GaAs and Vice Versa, 18th International Conference on Molecular Beam Epitaxy, Abstracts, p. 44, Sept. 2014.
• T. Shoji, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells, 29th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2014), Sept. 2014.
• Kazuo Tsutsui, Masayuki Kamiya, Yusuke Takei, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, Hiroshi Iwai. Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers, The International Workshop on Nitride Semiconductors (IWN2014), Aug. 2014.
• Y. Takei, M. Okamoto, W. Saito, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y. Kataoka, H. Iwai. Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures, 225th ECS Meeting, May 2014.
• T. Ohashi, H. Wakabayashi, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai. Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Akira Nakajima, Sin-ichi Nishizawa, Hiromichi Ohashi, Hiroaki Yonezawa, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai. One-Chip Operation of GaN-Based p-Channel and N-Channel Heterojunction Field Effect Transistors, The 26th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2014), 2014.
• T. Ohashi, K. Suda, S. Ishihara, N. Sawamoto, S. Yamaguchi, K. Matsuura, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai, A. Ogura, Hitoshi Wakabayashi. Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs, International Conference on Solid State Devices and Materials, Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, 1074, 2014.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristics of n-type diamond contacts with Ti, Ni, NiSi2 and Ni3P electrodes, China Semiconductor Technology International Conference (CSTIC) 2014, 2014.
• DARYOUSH ZADEH, Hiroshi Oomine, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction, IEDM 2013, 2014.
• Shuhei Hosoda, Kamale Tuokedaerhan, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai. Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode, 224th ECS Meeting in San Francisco, Oct. 2013.
• T. Seki, T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. Electrical and Infrared Absorption Studies on La-silicate/Si Interface, IEEE 2nd Int. Symp. on Next Generation Electronics (ISNE 2013), Feb. 2013.
• DARYOUSH ZADEH, Hiroshi Oomine, Yuya Suzuki, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode, 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT, ESSDERC 2013, 2013.
• ダリューシュザデ, Hiroshi Oomine, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density, 2013 International Conference on Solid State Devices and Materials(SSDM), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer, 2013 International Conference on Solid State Devices and Materials(SSDM), 2013.
• T. Kamale, R. Tan, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT, PRiME 2012, Oct. 2012.
• Y. Tanaka, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, S. Yamasaki, H. Iwai. TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal, PRiME 2012, Oct. 2012.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori1, Hiroshi Iwai. Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls, 12th Int. Workshop on Junction Technology (IWJT2012), May 2012.
• S. Kano, C. Dou, M. Hadi, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, E. Miranda, T. Hattori, H. Iwai. Influence of Electrode Material for CaOx Based Resistive Switching, China Semiconductor Technology International Conference (CSTIC), Mar. 2012.
• E. Mranda, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown, ESREF2012, [588] E. Miranda, T. Kawanago, K. Kakushima, J. Sune, H. Iwai, “Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown”, ESREF2012, October, 2012, Cagliari, Italy, 2012.
• T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. (100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture, 42nd European Solid-State Device Research Conference (ESSDERC 2012), 2012.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• K. Kakushima, J. Kanehara, Y. Izumi, T. Muro, T. Kinoshita, P. Ahmet, K. Tsutsui, T. Hattori, H. Iwai. Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Jun Kanehara, Youhei Miyata, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Kenji Ohmori, W. Feng, Soshi Sato, R. Hettiarachchi, M. Sato, T. Matsuki, Kuniyuki KAKUSHIMA, HIROSHI IWAI, Keisaku Yamada. Direct Real-Time Observation of Channel Potential Fluctuation, Correlated to Random Telegraph Noise of Drain Current Using Nanowire MOSFETs with Four-Probe Terminals, 2011 Symposium on VLSI Technology, 2011.
• Ahmet Parhat, 来山大祐, 金田翼, 鈴木 拓也, Tomotsune Koyanagi, Miyuki Kouda, マイマイティ マイマイティレャアティ, Takamasa Kawanago, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm, CSTIC2011, 2011.
• Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, Kenji Ohmori, KENJI NATORI, Keisaku Yamada, HIROSHI IWAI. Structural Effects of Channel Cross-section on a Gate Capacitance of Silicon Nanowire Field-Effect Transistors, CSTIC2011, 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Rare earth oxide capping effect on La2O3 gate dielectrics toward EOT of 0.5nm, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11), 2011.
• T. Nakayama, Kuniyuki KAKUSHIMA, O. Nakatsuka, Y. Machida, S. Sotome, T. Matsuki, Kenji Ohmori, HIROSHI IWAI, S. Zaima, 知京豊裕, Kenji Shiraishi, Keisaku Yamada. Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature, 2010 IEDM, Dec. 2010.
• Ahmet Parhat, 来山大祐, 金田 翼, 鈴木 拓也, Tomotsune Koyanagi, Miyuki Kouda, M. Mamatrishat, Takamasa Kawanago, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Scaling of EOT Beyond 0.5nm, ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010, Nov. 2010.
• KAZUO TSUTSUI, Masaoki Tanaka, Norifumi Hoshino, Hiroshi Nohira, Kuniyuki KAKUSHIMA, Ahmet Parhat, 佐々木雄一朗, Bunji Mizuno, T. Muro, T. Kinoshita, takeo hattori, HIROSHI IWAI. Soft X-ray Photoelectron Spectroscopy Study of Activation and Deactivation of Impurities in Shallow Junctions, ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010, Nov. 2010.
• unknown unknown, Kuniyuki KAKUSHIMA, Ahmet Parhat, M. Geni, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. The Effect of Isotropic and Anisotropic Scattering in Drain Region of Ballistic Channel Diode, ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010, Nov. 2010.
• Kenji Ozawa, Miyuki Kouda, Y. Urabe, T. Yasuda, Kuniyuki KAKUSHIMA, Ahmet Parhat, HIROSHI IWAI. La2O3 insulators prepared by ALD using La(iPrCp)3 source: self-limiting growth conditions and electrical properties, ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010, Nov. 2010.
• M.Bera, Ahmet Parhat, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Nobuyuki Sugii, 西山彰, takeo hattori, HIROSHI IWAI. Electrical Properties of Yttrium-Titanium Oxide High-k Gate Dielectric on Ge, ECS 218th Meeting, Oct. 2010.
• M. Mamatrishat, Miyuki Kouda, Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, A. Aierken, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, HIROSHI IWAI. Effect of Remote-Surface –Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics, ECS 218th Meeting, Oct. 2010.
• D. Kitayama, T. Koyanagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai. TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT, 218th ECS Meeting, Oct. 2010.
• Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Impact of Alkali-Earth-Elements Incorporation on Vfb R0ll-Off Characteristics of La2O3 Gated MOS Device, ECS 218th Meeting, Oct. 2010.
• Naoto Shigemori, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation, tECS 218th Meeting, Oct. 2010.
• 来山大祐, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. TiN Capping Effect on High Temperature Annealed RE-Oxide MOS Capacitors for Scaled EOT, ECS 218th Meeting, Oct. 2010.
• Y. Wu, Naoto Shigemori, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, 西山彰, KENJI NATORI, takeo hattori, HIROSHI IWAI. Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface, ECS 218th Meeting, Oct. 2010.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Optimized Oxygen Annealing Process for Vth Tuning of p-MOSFET with High-k/Metal Gate Stacks, ESSDERC 2010, 40th European Solid-State Device Research Conference, Sept. 2010.
• Soshi Sato, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, Kenji Ohmori, KENJI NATORI, Keisaku Yamada, HIROSHI IWAI. Gate Semi-Around Si Nanowire FET Fabricated by Conventional CMOS Process with Very High Drivability, ESSDERC 2010, 40th European Solid-State Device Research Conference, Sept. 2010.
• Ahmet Parhat, Wataru Hosoda, unknown unknown, Yoshihisa Ohishi, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, HIROSHI IWAI. Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs, IEEE IWJT 2010 Extended Abstracts 2010 International Workshop on Junction Technology, May 2010.
• KAZUO TSUTSUI, Norifumi Hoshino, Yasumasa Nakagawa, Masaoki Tanaka, Hiroshi Nohira, Kuniyuki KAKUSHIMA, Ahmet Parhat, 佐々木雄一朗, Bunji Mizuno, takeo hattori, HIROSHI IWAI. Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions, IEEE IWJT 2010 Extended Abstracts 2010 International Workshop on Junction Technology, May 2010.
• Ahmet Parhat, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Towards the Ultimate Scaling of MOSFET Gate Dielectrics - Direct Contact of High-k and Silicon-, ECS 217th, Apr. 2010.
• Ahmet Parhat, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Towards the Ultimate Scaling of MOSFET Gate Dielectrics - Direct Contact of High-k and Silicon, ECS 217th, Apr. 2010.
• AbudukelimuAbudureheman, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, HIROSHI IWAI, takeo hattori, KENJI NATORI. Performance of Silicon Ballistic Nanowire MOSFET with Diverse Orientations and Diameters, China Semiconductor Technology International Conference, pp. 1111-1116, Mar. 2010.
• Wataru Hosoda, Kenji Ozawa, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer, China Semiconductor Technology International Conference, pp. 1105-1110, Mar. 2010.
• Katuya Matano, Kiyohisa Funamizu, Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric, China Semiconductor Technology International Conference, [, pp. 1129-1134, Mar. 2010.
• Hiroshi Nohira, Yoichiro Kon, Koji Kitamura, Miyuki Kouda, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx / LaOx/Si and LaOx/CeOx /Si Structure, ECS 216th Meeting, vol. 25, No. 6, pp. 321-326, Oct. 2009.
• Kiyohisa Funamizu, Y.C. Lin, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, E.Y. Chang, takeo hattori, HIROSHI IWAI. Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure, ECS 216th Meeting, vol. 25, No. 6, pp. 265-270, Oct. 2009.
• M.K.Bera, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical Properties of Lanthanum-scandate Gate Dielectric Directly Deposited on Ge, ECS 216th Meeting, vol. 25, No. 6, pp. 67-77, Oct. 2009.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Shiraishi, KENJI NATORI, HIROSHI IWAI. Systematic Study on Size Dependences of Transport Parameters for Ballistic Nanowire-FET with Effective Mass Approximation, 2009 International Conference on Solid Sate Devices and Materials, E-7-5, Oct. 2009.
• Tomotsune Koyanagi, Koichi Okamoto, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, AKIRA NISHIYAMA, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La2O3 Gated MOS Device, ECS 216th Meeting, vol. 25, No. 6, pp. 17-22, Oct. 2009.
• Hideaki Arai, Hideyuki Kamimura, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Annealing Reaction for Ni Silicidation of Si Nanowire, ECS 216th Meeting, vol. 25, No. 7, pp. 447-454, Oct. 2009.
• Kuniyuki KAKUSHIMA, Ahmet Parhat, HIROSHI IWAI. Overwhelming the o.5 nm EOT Level for CMOS Gate Dielectric, ECS 216th Meeting, vol. 25, No. 7, pp. 171-175, Oct. 2009.
• Hiroto Nakayama, Kuniyuki KAKUSHIMA, Ahmet Parhat, E.Ikenaga, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors, ECS 216th Meeting, vol. 25, No. 6, pp. 339-345, Oct. 2009.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Kiichi Tachi, Miyuki Kouda, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm, ESSDERC 2009, 39th European Solid-State Device Research Conference, p. 403, Sept. 2009.
• M.Mamatrishat, Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Analysis of Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/La2O3 Gate Stacks, ECS 216th Meeting, vol. 25, No. 7, pp. 253-257, Sept. 2009.
• Soshi Sato, Hideyuki Kamimura, Hideaki Arai, Kuniyuki KAKUSHIMA, Ahmet Parhat, Kenji Ohmori, Keisaku Yamada, HIROSHI IWAI. High-Performance Si Nanowire FET with a Semi Gate-Around Structure Suitable for Integration, ESSDERC 2009, 39th European Solid-State Device Research Conference, p. 249, Sept. 2009.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Naoto Umezawa, Ahmet Parhat, Kenji Shiraishi, Toyohiro Chikyow, Keisaku Yamada, HIROSHI IWAI. Charged defects reduction in gate insulator with multivalent materials, 2009 Symposium on VLSI Technology, 2009 Symposium on VLSI Technology Digest of Technical Papers, VLSI Technology, pp. 200-201, June 2009.
• Takahiro Nagata, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 知京豊裕, HIROSHI IWAI. On the thermal stability of nicket silicides, Future Trends in Microelectronics(FTM-2009) Workshop, June 2009.
• Takamasa Kawanago, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Experimental Study for High Efffective Mobility with directly deposited HfO2/La2O3 MOSFET, INFOS2009, Microelectronic Engineering, INFOS2009, Vol. 86, pp. 1629-1631, June 2009.
• Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Post metallization annealing study in La2O3/Ge MOS structure, INFOS2009, Microelectronic Engineering, INFOS2009, Vol. 86, pp. 1638-1641, June 2009.
• Hideyuki Kamimura, Hideaki Arai, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact, ISTC /CSTIC2009, ISTC /CSTIC2009, pp. 58, Mar. 2009.
• Hiroki Fujisawa, A Srivastava, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, C.K. Sarkar, HIROSHI IWAI. Electrical Characterization of W/HfO2 MOSFETs with La2O3 Incorporation, ISTC /CSTIC2009, ISTC /CSTIC2009, pp. 53, Mar. 2009.
• H. Nakayama, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. Electrical Characteristics of La2O3 Gated MOS Capacitors with Different Wafer Orientation, 216th ECS Meeting, 2009.
• Y. Kobayashi, A. B. Sachid, K. Tsutsui, K. Kakushima, P. Ahmet, V. R. Rao, H. Iwai. Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai. Ni silicidation on Heavily Doped Si Substrates, The 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Oct. 2008.
• M. Hino, K. Nagata, T. Yoshida, D. Kosemura, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ogura, T. Hattori, H. Iwai. Study on Stress Memorization by Argon Implantation and Annealing, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Kakushima, K. Okamoto, K. Tachi, S. Sato, J. Song, T. Kawanago, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai. Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• M. Kouda, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• H. Nohira, Y. Takenaga, K. Kakushima, P. Ahmet, K. Tsutsui, H. Iwai. Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. 0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment, the 38th European Solid-State Device Research Conference (ESSDERC2008), Sept. 2008.
• K. Tsutsui, M. Watanabe, Y. Nakagawa, T. Matsuda, Y. Yoshida, E. Ikenaga, K. Kakushima, P. Ahmet, H. Nohira, T. Maruizumi, A. Ogura, T. Hattori, H. Iwai. New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy, the 38th European Solid-State Device Research Conference (ESSDERC2008), Sept. 2008.
• Y. Kobayashi, K. Tsutsui, K. Kakushima, P. Ahmet, V. R. Rao, H. Iwai. Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects, Int. Conf. on Solid State Devices and Materials (SSDM2008), Sept. 2008.
• Yoshisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers, 7th Int. Semiconductor Technology Conference (ECS-ISTC2008), May 2008.
• K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, S. Sato, T. Kawanago, J. Song, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai. Impact of Thin La2O3 Insertion for HfO2 MOSFET, 213th ECS Meeting, May 2008.
• K. Tsutsui, T. Shiozawa, K. Nagahiro, Y. Ohishi, K. Kakushima, P. Ahmet, N. Urushihara, M. Suzuki, H. Iwai. Effects of B or Al Interface Layers on Thermal Stability of Ni Silicide on Si, 213th ECS Meeting, May 2008.
• Kazuo Tsutsui, Masamitsu Watanabe, Yasumasa Nakagawa, Kazunori Sakai, Takayuki Kai, Cheng-Guo Jin, Yuichiro Sasaki, Kuniyuki Kakushima, Parhat Ahmet, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai.. Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique, The 8th International Workshop on Junction Technology (IWJT2008), May 2008.
• Kuniyuki Kakushima, Kouichi Okamoto, Manabu Adachi, Kiichi Tachi, Jaeyeol Song, Soushi Sato, Takamasa Kawanago, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI2007), Nov. 2007.
• K.Tachi, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, T.Hattori, H.Iwai. Improvement of Interface Properties of W/La2O3/Si MOS Structure Usin AI Capping Layer, ECS Transactions, The Electrochmical Society, Vol. 11, No. 4, pp. 191-198, Oct. 2007.
• [323] K.Tsutsui, K.Nagahiro, T.Shiozawa, P.Ahmet, K.Kakushima, H.Iwai. Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes, ECS 212th Meeting, Vol. 11, No. 6, pp. 207-213, Oct. 2007.
• K.Tsutsui, K.Nagahiro, T.Shiozawa, P.Ahmet, K.Kakushima, H.Iwai. Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes, ECS Transactions:ULSI Process Integration 5, The Electrochemical Society, Vol. 11, No. 6, pp. 207-213, Oct. 2007.
• M.Adachi, K.Okamoto, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, T.Hattori, H.Iwai. Control of Flat Band Voltage by Partial Incorporation of La2O3 or Sc2O3 into MfO2 in Metal/MfO2/SiO2/Si MOS Capacitors, ECS Transactions:Physics and Technology of High-k Gate Dielectrics 5, The Electrochemikal Society, Vol. 11, No. 4, pp. 157-167, Oct. 2007.
• [320] Koichi Okamoto, Manabu Adachi, Kuniyuki Kakushima, Parhat Ahmet, Nobuyuki Sugii, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Effective Control of Flat-band Voltage in HfO2 Gate Dielectric with La2O3 Incorporation, ESSDERC 2007, Sept. 2007.
• Takashi Shiozawa, Koji Nagahiro, Kazuo Tsutsui, Parhat Ahmet, Kuniyuki Kakushima, Hiroshi Iwai. Improvement of Thermal Stability of Ni Silicide by Al Interlayer Deposition, ECS-ISTC2007, May 2007.
• Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai. Parasitic Effects Depending on Shape of Spacer Region on FinFETs, 211th ECS Meeting, May 2007.
• K. Tachi, H. Iwai, T. Hattori, N. Sugii, K. Tsutsui, P. Ahemt, K. Kakushima. Effect of Oxygen for Ultra-Thin La2O3 Film Deposition, 2006 Joint International Meeting of ECS, Oct. 2006.
• Y. Shiino, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. La2O3 Gate Dielectric Thin Film with Sc2O3 Buffer Layer for High Temperature Annealing, 2006 Joint International Meeting of ECS, Oct. 2006.
• H. Nohira, T. Matsuda, K. Tachi, Y. Shiino, J. Song, Y. Kuroki, J. Ng, P. Ahmet, K. Kakushima, K. Tsutsui, E. Ikenaga, K. Kobayashi, H. Iwai, T. Hattori. Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer, 2006 Joint International Meeting of ECS, Oct. 2006.
• H. Sauddin, Y. Sasaki, H. Ito, B. Mizuno, P. Ahmet, K. Kakushima, N. Sugii, K. Tsutsui, H. Iwai. Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping, 2006 Joint International Meeting of ECS, Oct. 2006.
• J. Molina, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, I. Hiroshi. Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2, 2006 Joint International Meeting of ECS, Oct. 2006.

国内会議発表 (査読有り)

• Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Magnetic property in sputtered MoS2 thin film on growth temperature, 第23回 半導体におけるスピン工学の基礎と応用（PASPS-23), Dec. 2018.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, KENJI NATORI, HIROSHI IWAI. Cross-Sectional Distribution of Phonon-Limited Electron Mobility in Rectangular Silicon Nanowire Field Effect Transistors, 2011 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY, Jan. 2011.
• 野平博司, 今 陽一郎, 北村幸司, 幸田みゆき, 角嶋邦之, 岩井洋. CeO2/La2O3/Si(100)構造の熱安定性, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 703, Sept. 2008.
• 日野雅文, 吉田哲也, 小瀬村 大亮, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 小椋 厚志, 服部健雄, 岩井洋. SiN応力膜によるSi基板への歪記憶の検討, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 883, Mar. 2008.
• 日野雅文, 角嶋 邦之, パールハット アヘメト, 筒井 一生, 杉井 信之, 服部 健雄, 岩井 洋. HfO2/ La2O3のゲート絶縁膜を用いたSi-MOSFETの電気特性, 秋季第68回応用物理学会学術講演会, Nov. 2007.
• 幸田みゆき, 川那子高暢, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Sc2O3ゲート絶縁膜のリーク電流機構の解析, 秋季第68回応用物理学会学術講演会, 秋季第68回応用物理学会学術講演会 講演予稿集, pp. 820, Sept. 2007.
• 上村 英之, 足立 学, 角嶋 邦之, パールハット アヘメト, 筒井 一生, 杉井 信之, 服部 健雄, 岩井 洋. HfO2/SiO2 界面へのSc2O3 添加によるフラットバンド電圧シフト, 秋季第68回応用物理学会学術講演会, 秋季第68回応用物理学会学術講演会予稿集, pp. 820, Sept. 2007.
• 宋在烈, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. La2O3/Ge MIS 構造における微量Si 界面層導入による電気特性の変化, 秋季第68回応用物理学会学術講演会, Sept. 2007.
• 小林勇介, 角嶋邦之, パールハット・アヘメト, V. R. ラオ, 筒井一生, 岩井洋. ダブルゲート型およびプレーナー型MOSFETにおける構造バラつきの影響の比較検討, 秋季第68回応用物理学会学術講演会, 秋季第68回応用物理学会学術講演会予稿集, pp. 880, Sept. 2007.
• 藤澤 宏樹, 舘 喜一, 角嶋 邦之, パールハット・アヘメト, 筒井 一生, 杉井 信之, 服部 健雄, 岩井 洋. Alキャップ層がW/La2O3/Si MOS構造の電気特性に及ぼす影響, 秋季第68回応用物理学会学術講演会, 秋季第68回応用物理学会学術講演会予稿集, pp. 821, Sept. 2007.
• 岡本晃一, 足立学, 角嶋邦之, パールハット・アヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. HfO2/Si 界面へのLa2O3 サブモノレイヤー添加による電気特性の変化, 秋季第68回応用物理学会学術講演会, 秋季第68回応用物理学会学術講演会予稿集, pp. 820, Sept. 2007.
• 佐藤創志, 舘喜一, 宋在烈, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. ラジカル窒化によるLa_2O3ゲート絶縁膜への窒素導入効果 : 堆積時窒化によるEOT増加抑制効果（ゲート絶縁膜、容量膜、機能幕及びメモリ技術）, 電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス, 電子情報通信学会, Vol. 107, No. 85, pp. 71-74, May 2007.
• 小林勇介, 筒井一生, 角嶋邦之, V. Hariharan, V.R. Rao, パールハットアヘメト, 岩井洋. FinFETのSpacer領域形状変化のデバイス特性への影響, 春季第54回応用物理学会学術講演会, 春季第54回応用物理学会学術講演会予稿集, 応用物理学会, No. 02, pp. 924, Mar. 2007.

国際会議発表 (査読なし・不明)

• Reika Ota, Shinnosuke Yasuoka, Ryoichi Mizutani, Takahisa Shiraishi, Kuniyuki Kakushima, Hiroshi Funakubo. Ferroelectricity of 20-nm Thick (Al0.8Sc0.2)N Thin Films with TiN Electrodes, 2022 U.S.-Japan Seminar on Dielectric and Piezoelectric Ceramics, Nov. 2022.
• "Atsuhiro Ohta, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima". Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• H. Nishida, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. A simulation study on the transient leakage current analysis of a GaN epitaxial layer, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• "Kazuto Mizutani, Yu-Wei Lin, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima". Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• Y.-W. Lin, K. Mizutani, T. Hoshii, H. Wakabayashi, K. Tsutsui, Y.-F. Tsao, T.-J. Huang, H.-T. Hsu, K. Kakushima. Ferroelectric HfO2 Capacitors for Varctor Application in GHz, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• A. Miyata, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima. Photocurrent measurements of AlGaN/GaN HEMT under X-ray irradiation, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.
• Kazuto Mizutani, Yu Wei Lin, Takuya Hoshii, Hiroshi Funakubo, Hitoshi Wakabayashi, Kazuto Tsutsui, Kuniyuki Kakushima. Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing, 2020 VLSI-TSA Symposium (The 2020 International Symposium on VLSI Technology, System and Applications), Aug. 2020.
• J. Molina, T. Mimura, Y. Nakamura, T. Shimizu, H. Funakubo, I. Fujiwara, T. Hoshii, S. Ohmi, A. Hori, H. Wakabayashi, K. Tsutsui, K. Kakushima. Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance, 2020 IMW (The 12th International Memory Workshop), May 2020.
• K. Tsutsui, K. Natori, T. Ogawa, T. Muro, T. Matsuishita, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, K. Hayashi, F. Matsui, T. Kinoshita. Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography, Material Resarch Meeing 2019 (MRM2019), Dec. 2019.
• Takuya Hamada, Shinpei Yamaguchi, Taiga Horiguchi, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Comparative and Systematic Study of Doping Technology for 2D -Sputtered SputteredSputtered MoS 2 Film, Material Resarch Meeing 2019 (MRM2019), Dec. 2019.
• Joel Molina-Reyes, Haruki Iwatsuka, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing, VLSI 2019 (2019 Symposia on VLSI Technology and Circuits), June 2019.
• J. Molina, H. Iwatsuka, T. Hoshii, S. Ohmi, H. Funakubo, A. Hori, I. Fujiwara, H. Wakabayashi, K. Tsutsui, K. Kakushima. Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode, 235th ECS Meeting, May 2019.
• K. Sasaki, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, I. Mizushima, T. Yoda, K. Kakushima. Minority Carrier Lifetime Extraction Methodology of SiC Epitaxial Layer, 235th ECS Meeting, May 2019.
• K. Hisatsune, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, K. Kakushima. Thickness Effects on Charge and Discharge Characteristics of CeOx MIM Capacitors, 235th ECS Meeting, May 2019.
• Takuya Hoshii, Shuma Tsuruta, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform, International Workshop on Nitride Semiconductors (IWN2018), Nov. 2018.
• Takuya Hamada, Hayato Mukai, Tokio Takahashi, Toshihide Ide, Mitsuaki Shimizu, Hiroki Kuroiwa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Kazuo Tsutsui. Electrical properties of selectively grown GaN channel for FinFETs, International Workshop on Nitride Semiconductors (IWN2018), Nov. 2018.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography, International Conference on Solid-State Devices and Materials (SSDM2018), Sept. 2018.
• C. Y. Su, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3, ECS Meeting, May 2018.
• D. Saito, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. Reliability of SiC Schottky Diodes with Mo2C Electrode, ECS Meeting, May 2018.
• H. Kataoka, H. Iwai, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. A Defect Density Profile Extraction Method for GaN Epi-Wafers, ECS Meeting, Apr. 2018.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique, Intnational Workshop on Junction Technology (IWJT2018), Mar. 2018.
• K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai. 3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat), ASICON2017, Proceedings of International Conference on ASIC, Vol. 2017-October, pp. 1137-1140, Oct. 2017.  公式リンク  
  
• Yusuke Takei, Tomohiro Shimoda, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai. Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns, 2015 Material Research Society (MRS) Fall Meeting, Nov. 2015.
• Shunsuke Kubota, Rei Kayanuma, Akira Nakajima, Shin-ichi Nishizawa, Shin-ichi Nishizawa, Hiromichi Ohashi, Hitoshi Wakabayashi, Kazuo Tsutsui. P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation, 2015 Material Research Society (MRS) Fall Meeting, Nov. 2015.
• T. Kato, T.Inamura, A.Sasaki, K.Aoki, K.Kakushima, Y.Kataoka, A. Nishiyama, N. Sugii, H.Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Thickness-dependent electrical characterization of β‐FeSi2, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Y. Ito, H. Hori, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y.Kataoka, A.Nishiyama, N. Sugii, K. Natori, H. Iwai. Proposal of junction formation process for solar cells made of silicon microstructures, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• K. Terayama, A. Nakajima, S. Nishizawa, H. Ohasi, K. Kakushima, H. Wakabayashi, K. Tsutsui, H. Iwai. Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• M. Motoki, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H.Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Yokohama, Feb. 2014.
• Minjae Yoon, K. Terayama, A. Nakajima, S. Nichizawa, H. Ohasi, K. Kakushima, H. Wakabayashi, K. Tsutsui, H. Iwai. Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito. An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Y. Nakamura, K. Kakushima, Y. Kataoka, A. Nishiyama, H. Wakabayashi, N. Sugii, K. Tsutsui, K. Natori, H. Iwai. Measurement of flat-band voltage shift using multi-stacked dielectric film, The Workshop on Future Trend of Nanoelectronics: WIMNACT, Feb. 2014.
• H. Hasegawa, Y.Wu, J.Song, K. Kakushima, Y.Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• M. Kamiya, Y. Takei, W. Saito, K. Kakushima, H. Wakabayashi, Y. Kataoka, K. Tsutsui, H. Iwai. Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Shuhei Hosoda, Kamale Tuokedaerhan, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kenji Natori, takeo hattori, HIROSHI IWAI. Atomically flat interface of La-silicate/Si with W2C gate electrodes, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Mari Okamoto, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, HIROSHI IWAI. An Ohmic Contact Process for AlGaN/GaN Structures using TiS, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014.
• 劉 璞誠, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Characterization of Two-Dimensional Hole Gas at GaN/AlGaN Heterointerface, The 1st IEEE Workshop on Wide Bandgap and APower Devices pplications, 2014.
• 中島 昭, Hiroaki Yonezawa, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, 西澤伸一, 大橋弘通, Hitoshi Wakabayashi, HIROSHI IWAI. One-chip operation of GaN-based P-channel and N-channel Heterojunction Field Effect Transistors, The 26th International Symposium on Power Semiconductor Devices and ICs(ISPSD 2014), 2014.
• Takumi Ohashi, Hitoshi Wakabayashi, Kuniyuki KAKUSHIMA, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, KAZUO TSUTSUI, HIROSHI IWAI. Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hayato Hori, Yuuma Itou, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Effects of substrate back bias on solar cells formed on thin SOI structures, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Sin Man, Rei Kayanuma, Yusuke Takei, T. Takahashi, M. Shimizu, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, HIROSHI IWAI. A Study on the Fabrication of GaN-FinFET Using Selective Area Growth Method, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Kazuma Terayama, 中島 昭, 西澤伸一, 大橋弘通, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI, HIROSHI IWAI. Caluculation of ultimate on-resistance in GaN lateral HFETs using device simulation, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroaki Yonezawa, Rei Kayanuma, 中島 昭, 西澤伸一, 大橋弘通, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, HIROSHI IWAI. AlGaN/GaN-based p-channel HFETs with wide-operating temperature, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yuuma Itou, Hayato Hori, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Schottky barrier height reduction process for silicide/Si interfaces, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Masayuki Kamiya, Yusuke Takei, 齋藤渉, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, HIROSHI IWAI. Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yusuke Takei, Mari Okamoto, S. Man, Ryosuke Kayanuma, Masayuki Kamiya, 齋藤渉, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, HIROSHI IWAI. Contact resistances depending on AlGaN layer thickness for AlGaN/GaN HEMT structures, The Workshop on Future Trend of Nanoelectronics:WIMNACT, 2014.
• Yoshihiro Matsukawa, Mari Okamoto, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. An Ohmic Contact Process for AlGaN/GaN Structures using TiCElectrode, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Takafumi Katou, Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristic of b-FeSi2, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 雷 一鳴, Shu Munekiyo, Kuniyuki KAKUSHIMA, Takamasa Kawanago, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI, M. Furuhashi, N. Miura, S. Yamakawa. Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• 劉 璞誠, 中島 昭, Kuniyuki KAKUSHIMA, T. Makino, M. Ogura, 西澤伸一, HIROSHI IWAI, 大橋弘通. A study on mobility of 2D hole gas in AlGaN/GaN heterostructure with piezo- and spontaneous polarizationn, P. Liu, A. Nakajima, K. Kakushima, T. Makino, M. Ogura, S. Nishizawa, H. Iwai, H. Ohashi, “A study on mobility of 2D hole gas in AlGaN/GaN heterostructure with piezo- and spontaneous polarization”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• Masaaki Motoki, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroki Hasegawa, Y. Wu, 宋 禛漢, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yoshinori Nakamura, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Hitoshi Wakabayashi, Nobuyuki Sugii, HIROSHI IWAI. Measurement of flat-band voltage shift using multi-stacked dielectric film, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Tomoya Shoji, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Silicon Nanowire Solar Cells: Surface Passivation and Interface Analysis, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroaki Imamura, Taichi Inamura, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Characterization of Thin NiSi2 Films by Stacked Silicidation Sputtering Process with Kr Gas, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 宋 禛漢, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films, J. Song, K. Matsumoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• 吉原亮, Masaaki Motoki, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Interface control process toward un-pinned metal/germanium Schottky contact, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Jiangning Chen, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI, 齋藤渉. Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• wei li, 佐々木亮人, 大図秀行, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• K. Tuokedaerhan, Shuhei Hosoda, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• Y. Wu, Hiroki Hasegawa, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, 片岡好則, Kenji Natori, HIROSHI IWAI. Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• unknown unknown, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• ダリューシュザデ, Hiroshi Oomine, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Highly Scalable La2O3 /InGaAs Gate Stack with Low Interface State Density, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Y. Wu, Hiroki Hasegawa, Kuniyuki KAKUSHIMA, 大毛利健治, T. Watanabe, Hitoshi Wakabayashi, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, 片岡好則, Kenji Natori, Keisaku Yamada, HIROSHI IWAI. Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY-, 2014.
• K. Tuokedaerhan, Shuhei Hosoda, Yoshinori Nakamura, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY, 2014.
• 関拓也, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111), The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroshi Oomine, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, Akira Nishiyama, Nobuyuki Sugii, 片岡好則, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Effect of pretreatment for high-/k//InGaAs interface property, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Taichi Inamura, Takafumi Katou, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A study on silicide semiconductors for high efficiency thin film photovoltaic devices, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 宋 禛漢, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, 杉井信之, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 87-91, Oct. 2013.
• Shuhei Hosoda, K. Tuokedaerhan, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 61-64, Oct. 2013.
• Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A stacked sputtered process for β-FeSi2 formation, ECS 224nd Meeting, ECS Transactions, Oct. 2013.
• Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A stacked sputtered process for β-FeSi2 formation, ECS 224nd Meeting, ECS Transactions, Oct. 2013.
• Hiroshi Oomine, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 385-389, Oct. 2013.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characterization of atomically flat NiSi2 Schottky diode, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kazuki Matsumoto, 小山将央, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si fin and nanowire structures, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Michihiro Hosoda, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Size dependent phonon limited electron mobility of Si nanowire, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kana Tsuneishi, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical properties of Tm2O3 gate dielectric and its scaling issues, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel Ni silicidation technology for Schottky diode formation, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of metal electrode material on resistive switching properties of Ce oxides, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Ryuji Hosoi, Yuya Suzuki, ダリューシュザデ, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 中島一裕, Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 中島一裕, Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Takuya Suzuki, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, HIROSHI IWAI, 安田哲二. Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 来山大祐, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. [Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• K.Tuokedaerhan, 金田翼, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of annealing ambient for La2O3/Si capacitor, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. An analytical model of a tunnel FET with Schottky junction, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Si nanowire FET with asymmetric channel, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• DARYOUSH ZADEH, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of metal Schottky junction for InGaAs substrate, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• unknown unknown, A. Ablimit, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electron transport in ballistic diodes: influence of phonon generation in drain region, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• マイマイティ マイマイティレャアティ, 関拓也, Kuniyuki KAKUSHIMA, Ahmet Parhat, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, KENJI NATORI, takeo hattori, HIROSHI IWAI. Nitrogen incorporated La-silicate gate dielectric with high scalability, [G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kuniyuki KAKUSHIMA, Jun Kanehara, takeo hattori, KAZUO TSUTSUI, HIROSHI IWAI. Boron depth profile of a plasma immersed substrate by XPS analysis, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 小山将央, Naoto Shigemori, Kenji Ozawa, Kiichi Tachi, Kuniyuki KAKUSHIMA, O. Nakatsuka, 大毛利健治, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Keisaku Yamada, HIROSHI IWAI. Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source, 41st European Solid-State Device Research Conference, 2013.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET, 41st European Solid-State Device Research Conference, 2013.
• Hiroshi Oomine, ダリューシュザデ, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Tasuku Kaneda, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Influence of Flash Lamp Annealing on Electrical Characteristics of MOS Device with Si/ La2O3/n-Si Structure, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 157-164, 2013.
• 関拓也, Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Infrared absorption study of La-silicate gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kouhei Akita, Jun Kanehara, Hiroshi Nohira, Y. Izumi, TAKAYUKI MURO, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. [517] Y. Miyata, K. Akita, J. Kanehara, H. Nohira, Y. Izumi, T. Muro, T. Kinoshita, P. Analysis of Boron Doped in Si Fin Structure by Soft X-ray Photoelectron Spectroscopy, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Jun Kanehara, Yusuke Takei, Youhei Miyata, Hiroshi Nohira, Y. Izumi, TAKAYUKI MURO, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Depth Profiling of As with Various Chemical Bonding States Doped in Si Shallow Junction by Using Soft X-ray Photoelectron Spectroscopy, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Transient Switching Characteristics of Ce-oxide Resistive Switching Devices, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yuya Suzuki, ダリューシュザデ, Hiroshi Oomine, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface controlled metal contact for n-type diamonds, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Stacked Ni-Silicidation Process for Schottky Barrier FET, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kana Tsuneishi, Jiangning Chen, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Robust Ohmic Contact Process for AlGaN/GaN using Ti-silicide electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Michihiro Hosoda, Kuniyuki KAKUSHIMA, Kenji Natori, S. Yamasaki, H. Ohashi, HIROSHI IWAI. Carrier transport modeling in diamonds, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Size dependent resistivity change of Ni-silicides in nano-region, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yang Zhao, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Separation of bulk and interface traps of La-silicate on Si(100) surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yang Zhao, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Separation of bulk and interface traps of La-silicate on Si(100) surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yang Zhao, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Separation of bulk and interface traps of La-silicate on Si(100) surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, Miranda Enrique, takeo hattori, HIROSHI IWAI. Influence electrode materials on CeOx based resistive switching, CSTIC 2012, 2013.
• W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI. Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~, 2011 IEDM, 2013.
• Yuya Suzuki, ダリューシュザデ, Ryuji Hosoi, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation, 15th International Conference on Thin Films, 2013.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure, 15th International Conference on Thin Films, 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, 中塚理, パールハットアヘメト, Hiroshi Nohira, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100), 15th International Conference on Thin Films, 2013.
• Taichi Inamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Formation of Fe-silicides using Multi-Stacking Sputtering Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Taichi Inamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Formation of Fe-silicides using Multi-Stacking Sputtering Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 中島一裕, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 293-298, 2013.
• 中島一裕, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 293-298, 2013.
• Hiroshi Oomine, ダリューシュザデ, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of Surface Treatments for Metal Contact on p-type Diamonds, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Shuhei Hosoda, K. Tuokedaerhan, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Improvenents in interface, states with W-carbide metal gate for La2O3/si MOS Capacitor, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Novel Ohmic Contact Process for n-Ge Substrates, R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “A Novel Ohmic Contact Process for n-Ge Substrates”, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 宋 禛漢, 小山将央, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, 中塚理, 大毛利健治, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Keisaku Yamada, HIROSHI IWAI. Atomically flat Ni-silicide/Si interface using NiSi2 sputtering, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 劉 璞誠, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Transport characteristics of 2-dimensional hole gas in AlGaN/GaN, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Mari Okamoto, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Extraction of Energy Band Diagram of AlGaN/GaN with SiO2 Capped Annealing using X-ray Photoelectron Spectroscopy, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), February 18, 2013, , Japan, 2013.
• 関拓也, Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. International Symposium on Next-Generation Electronics(ISNE 2013), International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• Michihiro Hosoda, Kuniyuki KAKUSHIMA, Kenji Natori, S. Yamasaki, H. Ohashi, HIROSHI IWAI. On the electron conduction in n-diamond, International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width, International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI, HIROSHI IWAI. Interface State Density of Passivation/Nanowire Interface, The 1st International Symposium on Nano-Wire Si Solar Cells/ MEXT “FUTURE-PV Innovation” Project, 2013.
• Kuniyuki KAKUSHIMA, 吉原亮, KAZUO TSUTSUI, HIROSHI IWAI. A Low Temperature Ohmic Contact Process for n-type Ge Substrates, 2013 13th International Workshop on Junction Technology(IWJT2013), 2013.
• Miranda Enrique, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Modeling of the Output Characteristics of Advanced N-MOSFETs After a Severe Gate-to-Channel Dielectric Breakdown, Insulating Films on Semiconductors(INFOS 2013), 2013.
• B.L.Yang, H. Wong, S. Dong, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Charge Trapping and Detrapping Characteristics CeO2/La2O3 Stack Gate Dielectrics, 7th International Conference on Materials, for Advanced Technologies(ICMAT2013), 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface properties of La-silicate gate dielectrics on Si(110)surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface properties of La-silicate gate dielectrics on Si(110)surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• K. Tuokedaerhan, Shuhei Hosoda, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Work Function Extraction of W,Ta and Ti Carbides Formed by Multi Stacked Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Wei Li, 中島一裕, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Extraction of Interface State Density of 3-dimensional Si channel, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 大毛利健治, W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI, Keisaku Yamada. Low-frequency noise reduction in Si Nanowire MOSFETs, ECS 221st Meeting, ECS Transactions, Vol. 45, No. 3, pp. 437-442, 2012.
• Kuniyuki KAKUSHIMA, Yuya Suzuki, ダリューシュザデ, Takamasa Kawanago, HIROSHI IWAI. Development of Core Technologies for Green Nanoelectronics, International Symposium on “Development of Core Technologies for Green Nanoelectronics”, 2012.
• 櫻井蓉子, 大毛利健治, Keisaku Yamada, Kuniyuki KAKUSHIMA, T. Tayagaki, HIROSHI IWAI, Y. Kanemitsu, K. Asakawa, Kenji Shiraishi, S. Nomura. Photoluminescence Properties of Si Nanolayers and Si Nanowires, Tsukuba Nanotechnology Symposium 2012(TNS’12), 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. (100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture, ESSDERC 2012, 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. (100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture, ESSDERC 2012, 2012.
• Kuniyuki KAKUSHIMA, Yuta Tamura, 吉原亮, KAZUO TSUTSUI, HIROSHI IWAI. Interface Controlled Stacked Ni Silicidation Process with Schottky Barrier Height Controllability, K. Kakushima, Y. Tamura, R. Yoshihara, K. Tsutsui, H. Iwai, 2012.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process, ECS 222nd Meeting, ECS Transactions, 2012.
• Yuya Suzuki, ダリューシュザデ, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 4, pp. 145-150, 2012.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 9, pp. 217-221, 2012.
• Tohtarhan Kamal, R. Tan, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 4, pp. 281-284, 2012.
• Jiangning Chen, Kana Tsuneishi, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 3, pp. 353-357, 2012.
• Jiangning Chen, Kana Tsuneishi, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 3, pp. 353-357, 2012.
• Kana Tsuneishi, Jiangning Chen, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure, ECS 222nd Meeting, ECS Transactions, Vol.50, No.3, pp., October 11, 2012,, ECS Transactions, Vol. 50, No. 3, pp. 447-450, 2012.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kana Tsuneishi, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical properties of Tm2O3 gate dielectric and its scaling issues, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kana Tsuneishi, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical properties of Tm2O3 gate dielectric and its scaling issues, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Michihiro Hosoda, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Size-dependent phonon-limited electron mobility in Si Nanowire MOSFETs, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Y. Tanaka, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, HIROSHI IWAI. A novel Ni silicidation technology for Schottky diode formation, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of metal electrode material on resistive swirching properties of Ce oxides, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 鈴木 拓也, Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, HIROSHI IWAI, 安田哲二. Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Ryuji Hosoi, Yuya Suzuki, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 中島一裕, Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by charge pumping method, [550] K. Nakajima, W. Li, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Interface state density measurements of 3D silicon channel by charge pumping method”, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Daisuke Kitayama, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• K. Tuokedaerhan, Tasuku Kaneda, マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of Annealing Ambient for La2O3/Si Capacitor, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Wei Li, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface state density measurements of 3D silicon channel by conductance method, Interface state density measurements of 3D silicon channel by conductance method, 2012.
• Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. An analytical model of a tunnel FET with Schottky junction, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI, takeo hattori. Si nanowire FET with asymmetric channel, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI, takeo hattori. Si nanowire FET with asymmetric channel, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• DARYOUSH ZADEH, Ryuji Hosoi, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Characterization and improvement of high-k/InGaAs devices, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Natori, HIROSHI IWAI. Corner Effects on Phonon-Limited Mobility in Rectangular Si Nanowire MOSFETs, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Miyuki Kouda, 鈴木 拓也, Kuniyuki KAKUSHIMA, パールハットアヘメト, HIROSHI IWAI. Stack structures of ALD- La2O3 and CVD-CeO2 : fabrication and mobility improvement effects, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, HIROSHI IWAI, 安田哲二. Comparative study of CeO2 gate dielectrics using chemical vapor deposition and atomic layer deposition, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Influence of Heat Generation within Drain Region on Transport of Hot Electrons, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• マイマイティ マイマイティレャアティ, 関拓也, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Nitrogen incorporated La-silicate gate dielectric with high scalability, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kuniyuki KAKUSHIMA, Jun Kanehara, takeo hattori, KAZUO TSUTSUI, HIROSHI IWAI. Boron depth profile of a plasma immersed substrate by XPS analysis, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Ryuji Hosoi, Yuya Suzuki, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates, CSTIC 2012, 2012.
• Wei Li, 中島一裕, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method, CSTIC 2012, 2012.
• 大毛利健治, W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI, Keisaku Yamada. Low-frequency noise reduction in Si Nanowire MOSFETs, ECS 221st Meeting, ECS Transactions, Vol. 45, No. 3, pp. 437-442, 2012.
• 大毛利健治, W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI, Keisaku Yamada. Low-frequency noise reduction in Si Nanowire MOSFETs, ECS 221st Meeting, ECS Transactions, Vol. 45, No. 3, pp. 437-442, 2012.
• Miranda Enrique, shinichi kano, 竇春萌, J. Sune, Kuniyuki KAKUSHIMA, HIROSHI IWAI. New experimental evidences of conductance quantization in electroformed oxide stacks, E-MRS 2012 Spring Meeting, 2012.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Y. Izumi, T. Muro, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Soft X-ray Photoelectron Spectroscopy Study of Boron Doped on Top Surfaces and Sidewalls of Si Fin Structures, 2012 12th International Workshop on Junction Technology(IWJT2012), 2012.
• 来山大祐, 久保田 透, Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Precise Control of Silicate Reaction with La2O3 Gate Dielectrics towards Equivalent Oxide Thickness of 0.5 nm, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Si nanowire FET with asymmetric channel, Tsukuba Nanotechnology Symposium(TNS’11), 2011.
• Y. Wu, Kuniyuki KAKUSHIMA, 大毛利健治, Akira Nishiyama, HIROSHI IWAI, Keisaku Yamada. A Study on Fabrication and Analytic Modeling of novel Schottky contact tunneling Transistors, Tsukuba Nanotechnology Symposium(TNS’11), 2011.
• 櫻井 蓉子, 大毛利健治, Keisaku Yamada, Kenji Shiraishi, Kuniyuki KAKUSHIMA, HIROSHI IWAI, S. Nomura. Photoluminescence Characterization of the Interface Properties of Si Nanolayers and Nanowires, ECS 220th Meeting, 2011.
• Hiroshi Nohira, 小松新, 山下晃司, Kuniyuki KAKUSHIMA, HIROSHI IWAI, Y. Hioshi, K. Sawano, Y. Shiraki. XPS Study on Chemical Bonding States of high-k/high-μ Gate Stacks for Advanced CMOS, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 137-146, 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics, ECS 220th Meeting,ECS Transactions, ECS Transactions, Vol. 41, No. 7, pp. 119-124, 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics, ECS 220th Meeting, ECS Transactions, Vol. 41, No. 7, pp. 119-124, 2011.
• C. Dou, 向井 弘樹, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structure, 219th ECS Meeting, 2011.
• Ahmet Parhat, 来山大祐, 金田翼, 鈴木 拓也, Tomotsune Koyanagi, Miyuki Kouda, マイマイティ マイマイティレャアティ, Takamasa Kawanago, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High –k Gate Stacks, ,219th ECS Meeting, 2011.
• W. Feng, R. Hettiarachchi, Soshi Sato, Kuniyuki KAKUSHIMA, M. Niwa, HIROSHI IWAI, Keisaku Yamada, Kenji Ohmori. Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties, 2011 International Conference on Solid State Devices and Materials(SSDM 2011), 2011.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Metal Inserted Poly-Si Stacks with La2O3 Gate Dielectrics for Scaled EOT and VFB Control by Oxygen Incorporation, CSTIC2011, 2011.
• Takashi Kanda, ダリューシュザデ, Y. C. Lin, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, E.Y. Chang, KENJI NATORI, takeo hattori, HIROSHI IWAI. Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors, CSTIC2011, 2011.
• マイマイティ マイマイティレャアティ, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, HIROSHI IWAI. Remote-surface-roughness scattering-limited electron, mobility in ultrathin high-k gate stacked MOSFETs, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• 金田翼, Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effect of rare earth oxide capping for La-based gate oxides, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• Takamasa Kawanago, 鈴木 拓也, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. An effective process for oxygen defect suppression for La-based oxide gate dielectric, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• 中島一裕, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Interface State Density Measurement of Three Dimensional Silicon Structures by Charge Pumping Method, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• 小山将央, Naoto Shigemori, Hideaki Arai, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Lateral encroachment of Ni silicide into silicon nanowire, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• Naoto Shigemori, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. An effective suppression process for Ni silicide enchroachment into Si nanowire, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• unknown unknown, Kuniyuki KAKUSHIMA, Ahmet Parhat, KENJI NATORI, HIROSHI IWAI. Influence of Phonon Generation of Hot Electrons in Drain Region on Ballistic Transport, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, KENJI NATORI, HIROSHI IWAI. Corner Effects on Phonon-Limited Mobility in Rectangular Si Nanowire MOSFETs, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, Kenji Ohmori, KENJI NATORI, Keisaku Yamada, HIROSHI IWAI. Influence of the cross-sectional shape for Si nanowire FETs, ,Taiwan-Japan Workshop on “Nano Devices”, 2011.
• Kiichi Tachi, Kuniyuki KAKUSHIMA, HIROSHI IWAI, S. Cristoloveanu, T. Ernst. Characterization of carrier transport in vertically-stacked Si nanowire FETs, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• HIROSHI IWAI, Kuniyuki KAKUSHIMA, E.Y.Chang, Yueh-Chin Lin. III-V MOSFETs for Next Generation – Fabrication of III-V MOS Capacitors, Taiwan-Japan Workshop on “Nano Devices”, 2011.
• ダリューシュザデ, Takashi Kanda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11), 2011.
• Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of CVD and ALD processes, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11), 2011.
• Kuniyuki KAKUSHIMA, Tomotsune Koyanagi, 来山大祐, Miyuki Kouda, Jaeyeol Song, Takamasa Kawanago, M. Mamatrishat, Kiichi Tachi, M. K. Bera, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, Keisaku Yamada, HIROSHI IWAI. Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability, 2010 Symposium on VLSI Technology, June 2010.
• Kuniyuki KAKUSHIMA, HIROSHI IWAI. High-k expariment below 0.4 nm EOT, TIT-UCAM workshop, July 2009.
• Naoto Umezawa, Kenji Shiraishi, Kuniyuki KAKUSHIMA, Kenji Ohmori, Keisaku Yamada, 知京豊裕, HIROSHI IWAI. Relation between solubility of silicon in high-k oxides and the effect of Fermi level pinning, ECS 213th Meeting, May 2008.

国内会議発表 (査読なし・不明)

• 梶川 亮介, 川那子 高暢, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• 寺岡 楓, 今井 慎也, 黒原 啓太, 伊東 壮真, 川那子 高暢, 宗田 伊理也, 角嶋 邦之, 若林 整. Ni/Al2O3/スパッタWS2コンタクトの電流電圧特性, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• 今井 慎也, 梶川 亮介, 川那子 高暢, 宗田 伊理也, 角嶋 邦之, 辰巳 哲也, 冨谷 茂隆, 筒井 一生, 若林 整. スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性, 第84回応用物理学会秋季学術講演会, Sept. 2023.
• Peilong Wang, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs, 70th JSAP Spring meeting, Mar. 2023.
• 濱田 昌也, 松浦 賢太朗, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact, 第70回応用物理学会春季学術講演会, Mar. 2023.
• 川那子 高暢, 梶川 亮介, 水谷 一翔, Tsai Sung Lin, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 安岡慎之介, 大田怜佳, 岡本一輝, 石濱圭佑, 清水荘雄, 角嶋邦之, 上原雅人, 山田浩志, 秋山守人, 小金澤智之, L. S. R. Kumara, Okkyun Seo, 坂田修身, 舟窪浩. メモリ応用に向けた(Al, Sc)N膜の薄膜化の検討, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 立松 真一, 濱田 昌也, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. アニール処理によるWS2-Niエッジコンタクト特性の向上, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 小野 凌, 今井 慎也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 今井 慎也, 小野 凌, 宗田 伊理也, 角嶋 邦之, 辰巳 哲也, 冨谷 茂隆, 筒井 一生, 若林 整. MoS2膜質のスパッタ成膜レート依存性調査, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 水谷 一翔, 星井 拓也, 川那子 高暢, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. 希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 宗田 伊理也, 白倉 孝典, ファム ナムハイ, 角嶋 邦之, 筒井 一生, 若林 整. 強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• 宗田 伊理也, 白倉 孝典, PHAM NAM HAI, 角嶋 邦之, 筒井 一生, 若林 整. Ferromagnetism and current control of magnetoresistance in two-dimensional polycrystalline MoS2, 第63回フラーレン・ナノチューブ･グラフェン総合シンポジウム, Aug. 2022.
• 阿野 響太郎, 星井 拓也, 若林 整, 筒井 一生, 依田 孝, 角嶋 邦之. ゲート付きSiC pnダイオードの電気特性評価, 第83回応用物理学会秋季学術講演会, Aug. 2022.
• 宗田 伊理也, 白倉 孝典, ファム ナム ハイ, 角嶋 邦之, 筒井 一生, 若林 整. 二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調, 2022年第69回応用物理学会春季学術講演会, Mar. 2022.
• 小森 勇太, 木村 安希, 星井 拓也, 宮野 清孝, 津久井 雅之, 水島 一郎, 依田 孝, 角嶋 邦之, 若林 整, 筒井 一生. InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性, 第82回応用物理学会秋季学術講演会, Sept. 2021.
• 小森 勇太, 星井 拓也, 宮野 清孝, 津久井 雅之, 水島 一郎, 依田 孝, 角嶋 邦之, 若林 整, 筒井 一生. InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性, 第69回応用物理学会春季学術講演会, Sept. 2021.
• 筒井一生, 濱田拓也, 高山 研, 金 相佑, 星井拓也, 角嶋邦之, 若林 整, 高橋言緒, 井手利英, 清水三聡. 選択成長法を用いたGaN 系FinFET, 電気学会電子デバイス研究会, Mar. 2021.
• 木村 安希, 星井 拓也, 宮野 清孝, 津久井 雅之, 水島 一郎, 依田 孝, 角嶋 邦之, 若林 整, 筒井 一生. InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 門 龍翔, 横川 凌, 沼沢 陽一郎, 筒井 一生, 角嶋 邦之, 小椋 厚志. Si-IGBT作製プロセスにおける水素熱処理の影響, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 筒井 一生, 松橋 泰平, 星井 拓也, 角嶋 邦之, 若林 整, 永山 勉, 樋口 隆弘, 加藤 慎一, 谷村 英昭, 室 隆桂之, 松下 智裕, 森川 良忠. AsおよびBの共ドープによるSi中Asクラスターの特性制御, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 高山 研, 太田 貴士, 佐々木 満孝, 向井 勇人, 濱田 拓也, 高橋 言雄, 井出 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. 選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 久恒 悠介, 金 相佑, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. 横型GaN FinFETの構造最適化についての検討, 第81回応用物理学会秋季学術講演会, Sept. 2020.
• 松橋 泰平, 星井 拓也, 沖田 寛昌, 中島 昭, 角嶋 邦之, 若林 整, 筒井 一生. 分極接合基板における2DEG枯渇電圧の解析的導出, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 木村 安希, 星井 拓也, 宮野 清孝, 布上 真也, 名古 肇, 水島 一郎, 依田 孝, 角嶋 邦之, 若林 整, 筒井 一生. InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 松浦 賢太朗, 濱田 昌也, 濱田 拓也, 谷川 晴紀, 坂本 拓朗, 堀 敦, 宗田 伊理也, 川那子 高暢, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. 大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 渡辺正裕, 執行直之, 星井拓也, 古川和由, 角嶋邦之, 佐藤克己, 末代知子, 更屋拓哉, 高倉俊彦, 伊藤一夫, 福井宗利, 鈴木慎一, 竹内 潔, 宗田伊里也, 若林 整, 中島 昭, 西澤伸一, 筒井一生, 平本俊郎, 大橋弘通, 岩井洋. トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション, 電子情報通信学会 SDM(シリコン材料・デバイス)研究会, 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 119, No. 273, pp. 45-48, Nov. 2019.
• 太田 惇丈, 宋 禛漢, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. 原子層堆積法を用いたイットリウムシリケート薄膜の形成, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing, The 80th JSAP Autumn meeting, Sept. 2019.
• 松橋 泰平, 星井 拓也, 沖田 寛昌, Indraneel Sanyal, Yu-Chih Chen, Ying-Hao Ju, 中島 昭, 角嶋 邦之, 若林 整, Jen-Inn Chyi, 筒井 一生. TEGを用いたGaN/AlGaNヘテロ成長の2DHG側界面電荷への影響, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 今井 慎也, 濱田 昌也, 五十嵐 智, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 硫化プロセスにおけるスパッタMoS2膜質向上の重要性, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 五十嵐 智, 望月 祐輔, 谷川 晴紀, 濱田 昌也, 松浦 賢太朗, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜とTiSi2膜の界面におけるFGアニールによるコンタクト抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 谷川 晴紀, 松浦 賢太朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. 正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 木村 安希, 久永 真之佑, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 部分的に薄層化したAlGaN 層によるAlGaN/GaN コンタクト抵抗低減効果の薄層領域パターン依存性, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 宋 ジンハン, 太田 惇丈, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. Y2O3/SiO2積層構造の絶縁膜を用いたMOS capacitorの特性評価, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 山岸 朋彦, 堀 敦, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 草深 一樹, Sunglin Tsai, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. スパッタリングによって形成したAlScN膜のリーク電流の評価, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 西田 宗史, 星井 拓也, 片岡 寛明, 筒井 一生, 角嶋 邦之, 若林 整. ステップ電圧印加時の過渡電流測定によるGaN中のトラップ密度評価, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 宮田 篤希, 齋藤 大樹, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. 4H-SiCエピタキシャル層によるX線検出に関する検討, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 神林 郁哉, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. Si(111)基板上GaNのためのMgF2バッファの検討, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 蔡 松霖, 草深 一樹, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. スパッタリングを用いたAlScN膜の形成, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 濱田 昌也, 松浦 賢太朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 沖田 寛昌, 星井 拓也, 松橋 泰平, Sanyal Indraneel, Chen Yu-Chih, Ju Ying-Hao, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, Chyi Jen-Inn, 筒井 一生. TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 濱田 拓也, 堀口 大河, 辰巳 哲也, 冨谷 茂隆, 濱田 昌也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 井上 毅哉, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の研究, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 向井 勇人, 髙山 研, 濱田 拓也, 高橋 言緒, 井手 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 選択成長法を用いたGaN FinFETの作製, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 高山 研, 向井 勇人, 濱田 拓也, 高橋 言緒, 井手 利英, 清水 三総, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. GaN Fin構造選択成長における低抵抗領域の発生原因の検討, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 堀口 大河, 濱田 拓也, 辰巳 哲也, 冨谷 茂隆, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 更屋 拓哉, 伊藤 一夫, 高倉 俊彦, 福井 宗利, 鈴木 慎一, 竹内 潔, 附田 正則, 沼沢 陽一郎, 佐藤 克己, 末代 知子, 齋藤 渉, 角嶋邦之, 星井 拓也, 古川 和由, 渡辺正裕, 執行 直之, 筒井一生, 岩井洋, 小椋 厚志, 西澤 伸一, 大村 一郎, 大橋 弘通, 平本 俊郎. 5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 (シリコン材料・デバイス), 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 118, No. 429, pp. 39-44, Aug. 2019.
• 星井 拓也, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, 筒井 一生. 分極接合基板におけるAlGaN/GaNヘテロ界面の欠陥電荷評価, 日本結晶成長学会ナノエピ分科会 第11回ナノ構造・エピタキシャル成長講演会, June 2019.
• 筒井一生, 松下 智裕, 名取 鼓太郞, 小川 達博, 室 隆桂之, 森川 良忠, 星井 拓也, 角嶋邦之, 若林整, 林 好一, 松井 文彦, 木下 豊彦. 光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測, 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 電子情報通信学会, Vol. 119, No. 96, pp. 23-27, June 2019.
• 濱田 拓也, 向井 勇人, 高橋 言緒, 井手 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. FinFET応用に向けた選択成長GaNチャネルの電気特性, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 筒井 一生, 松下 智裕, 名取 鼓太郞, 小川 達博, 室 隆桂之, 森川 良忠, 星井 拓也, 角嶋 邦之, 若林 整, 林 好一, 松井 文彦, 木下 豊彦. 光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 筒井 一生, 松下 智裕, 名取 鼓太郞, 室 隆桂之, 森川 良忠, 星井 拓也, 角嶋 邦之, 若林 整, 林 好一, 松井 文彦, 木下 豊彦. 光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 松浦 賢太朗, 濱田 昌也, 坂本 拓朗, 谷川 晴紀, 宗田 伊理也, 石原 聖也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 筒井一生, 松下智裕, 室隆桂之, 森川良忠, 名取鼓太郎, 小川達博, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦. 光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析, 応用物理学会シリコンテクノロジー分科会第216回研究集会, Feb. 2019.
• 松浦賢太朗, 清水淳一, 外山真矢人, 大橋匠, 坂本拓朗, 宗田伊理也, 石原聖也, 角嶋邦之, 筒井一生, 小椋厚志, 若林整. 大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用, 応用物理学会シリコンテクノロジー分科会第216回研究集会, Feb. 2019.
• Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Growth temperature dependence of magnetic property of sputtered MoS2 thin film, The 79th JSAP Autumn meeting, Sept. 2018.
• 向井 勇人, 濱田 拓也, 高橋 言緒, 井出 利英, 清水 三聡, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 佐々木 杏民, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響, Sept. 2018.
• 佐々 康平, 久恒 和也, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. 酸化セリウムを挿入したMIMキャパシタの充放電特性, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 松浦 賢太朗, 清水 淳一, 外山 真矢人, 大橋 匠, 宗田 伊理也, 石原 聖也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. 大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 小川 達博, 名取 鼓太郎, 星井 拓也, 仲武 昌史, 渡辺 義夫, 永山 勉, 樋口 隆弘, 加藤 慎一, 谷村 英昭, 角嶋 邦之, 若林 整, 筒井 一生. フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 谷川 晴紀, 松浦 賢太朗, 濱田 昌也, 坂本 拓朗, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 五十嵐 智, 松浦 賢太朗, 濱田 昌也, 谷川 晴紀, 坂本 拓朗, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 神林 郁哉, 星井 拓也, 角嶋 邦之, 若林 整, 筒井 一生. Si(111)基板上に成長したInAs極薄膜のラマン分光法による歪み評価, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 久恒 和也, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 井上 毅哉, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の基礎的検討, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 清水 孝, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. TMAHによる表面処理のp型GaN/金属コンタクト特性への影響, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 鶴田 脩真, 星井 拓也, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, 筒井 一生. AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 久永 真之佑, 渡部 拓巳, 星井 拓也, 角嶋 邦之, 若林 整, 岩井 洋, 筒井 一生. 凹凸AlGaN層導入によるAlGaN/GaN HEMT構造のコンタクト抵抗低減手法におけるドットアレイ状平面パターンのサイズ効果, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 岩塚 春樹, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之. Siを導入したHfO2のMIMキャパシタの容量特性, 第79回応用物理学会秋季学術講演会, Sept. 2018.
• 濱田拓也, 向井勇人, 高橋言緒, 井手利英, 清水三聡, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生. FinFET応用に向けた選択成長GaNチャネルの電気特性, 第82回半導体・集積回路シンポジウム, Aug. 2018.
• 大橋 匠, 坂本 拓朗, 松浦 賢太朗, 清水 淳一, 外山 真矢人, 石原 聖也, 日比野 祐介, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. Migration制御したスパッタリング法による2次元層状MoS2成膜, 第65回応用物理学会春季学術講演会, Mar. 2018.
• 坂本 拓朗, 大橋 匠, 松浦 賢太朗, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減, Mar. 2018.
• Zulkornain Bin Danial, 宗田 伊理也, 早川 直希, 角嶋 邦之, 筒井 一生, 若林 整. Sputtered MoS2 Thin Film Formation on CaF2 (111) Substrate, 第65回応用物理学会春季学術講演会, Mar. 2018.
• 安重 英祐, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. ソース/ドレイン逆凹型コンタクト構造による横型積層シリコンナノワイヤFETにおける自己発熱効果の緩和, 第65回応用物理学会春季学術講演会, Mar. 2018.
• Chen-Yi Su, Takuya Hoshii, Iriya Muneta, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima. Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3, 65th JSAP Spring meeting, Mar. 2018.
• 筒井一生, 角嶋邦之, 星井 拓也, 中島 昭, 西澤 伸一, 若林整, 宗田伊理也, 佐藤 克己, 末代 知子, 齋藤 渉, 更屋 拓哉, 伊藤 一夫, 福井 宗利, 鈴木 慎一, 小林 正治, 高倉 俊彦, 平本 俊郎, 小椋 厚志, 沼沢 陽一郎, 大村 一郎, 大橋 弘通, 岩井洋. 三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術), 電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan, 電気学会, Vol. 2017, No. 74, pp. 1-6, Nov. 2017.
• 早川直希, 宗田伊理也, 大橋匠, 松浦賢太朗, 清水淳一, 角嶋邦之, 筒井一生, 若林整. トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 龍口 傑, 星井 拓也, 宗田 伊理也, 若林 整, 筒井 一生, 岩井 洋, 角嶋 邦之. 横型Siナノウォール太陽電池の発電特性に関する検討, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 篠原 健朗, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 外山 真矢人, 大橋 匠, 松浦 賢太朗, 清水 淳一, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性, 第64回応用物理学会春季学術講演会, Mar. 2017.
• 安重 英祐, 大橋 匠, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. Accumulation-Mode積層型ナノワイヤCMOSデバイスのチャネル不純物濃度およびゲート電極仕事関数の依存性, 第77回応用物理学会秋季学術講演会, Sept. 2016.
• Chunmeng Dou, Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• 小路智也, 伊藤勇磨, 堀隼人, 宮澤遼太, 嘉藤貴史, 角嶋邦之, 若林整, 筒井一生, 片岡好則, 岩井洋. Surface States, Potential and Interface Control for Si Nanowire PV, 文部科学省「革新的エネルギー研究開発拠点形成事業」第2回国際シンポジウム ナノワイヤー太陽電池 ～最先端の太陽電池研究で福島復興へ～, 2014.
• 神谷真行, 武井優典, 齋藤渉, 角嶋邦之, 若林整, 片岡好則, 筒井一生, 岩井洋. AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性, 第61回応用物理学会春季学術講演会, 2014.
• 伊藤勇磨, 堀隼人, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 名取研二, 岩井洋. 微細Si構造を利用した太陽電池に適した接合プロセスの提案, 第61回応用物理学会春季学術講演会, 2014.
• 米澤宏昭, 萱沼怜, 中島 昭, 西澤伸一, 大橋弘通, 筒井一生, 角嶋邦之, 若林整, 岩井洋. 広い温度範囲で動作するAlGaN/GaN系Pチャネル型HFET, 第61回応用物理学会春季学術講演会, 2014.
• 寺山一真, 中島 昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生, 岩井洋. デバイスシミュレーションによる横型GaNパワーデバイスの極限オン抵抗の試算, 第61回応用物理学会春季学術講演会, 2014.
• 堀隼人, 伊藤勇磨, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 名取研二, 岩井洋. 薄膜SOI太陽電池の発電特性への基板バイアス効果, 第61回応用物理学会春季学術講演会, 2014.
• 武井優典, 岡本真里, マンシン, 萱沼怜, 神谷真行, 齋藤渉, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 岩井洋. AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性, 第61回応用物理学会春季学術講演会, 2014.
• 佐々木亮人, 青木克明, 片岡好則, 小林 薫平, 稲村太一, 角嶋邦之, 岩井洋. バリウムシリサイド半導体を用いたショットキー型太陽電池に関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 松川佳弘, 岡本真里, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性, 第61回応用物理学会春季学術講演会, 2014.
• Yoon Minjae, 寺山一真, 中島 昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生, 岩井洋. デバイスシミュレーションによるAlGaN/GaN系FinFETsにおけるスケーリング則の検証, 第61回応用物理学会春季学術講演会, 2014.
• 雷 一鳴, 宗清修, 角嶋邦之, 川那子高暢, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 古橋 壮之, 三浦 成久, 山川 聡. ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析, 第61回応用物理学会春季学術講演会, 2014.
• 劉 璞誠, 竇春萌, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 譚錫昊, 川那子高暢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 元木雅章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. NiとGe積層薄膜によって形成したNiGe膜のシート抵抗と熱処理温度の関係, 第61回応用物理学会春季学術講演会（2014年3月17日～3月20日）, 2014.
• 長谷川明紀, 呉研, 宋 禛漢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価, 第61回応用物理学会春季学術講演会, 2014.
• 小路智也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Siナノワイヤー曲面における保護膜界面準位密度の研究, 第61回応用物理学会春季学術講演会, 2014.
• 岡本真里, 松川佳弘, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 大橋弘通, 岩井洋, 齋藤渉. TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化, 第61回応用物理学会春季学術講演会, 2014.
• 今村浩章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 積層シリサイド化スパッタプロセスにより作成したNiシリサイドショットキーダイオードの評価, 第61回応用物理学会春季学術講演会, 2014.
• 吉原亮, 元木雅章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子, 第61回応用物理学会春季学術講演会, 2014.
• 細田修平, Tuokedaerhan Kamale, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現, 第61回応用物理学会春季学術講演会, 2014.
• 関拓也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Si(110),(111)基盤上で熱処理による界面反応で形成したLa-silicateゲート絶縁膜の物理的理解に関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 大嶺洋, ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 角嶋邦之, 西山彰, 杉井信之, 片岡好則, 若林整, 筒井一生, 名取研二, 岩井洋. La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響, 第61回応用物理学会春季学術講演会, 2014.
• 稲村太一, 嘉藤貴史, 佐々木亮人, 青木克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. β-FeSi2の抵抗率熱処理依存性, 第61回応用物理学会春季学術講演会, 2014.
• LiWei, 佐々木亮人, 大図 秀行, 青木克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 単斜晶WO3薄膜抵抗率の熱処理依存性, 第61回応用物理学会春季学術講演会, 2014.
• 陳江寧, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. La2O３ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性, 第61回応用物理学会春季学術講演会, 2014.
• 呉研, 長谷川明紀, 角嶋邦之, 渡辺 孝信, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性, 第61回応用物理学会春季学術講演会, 2014.
• Tuokedaerhan Kamale, Shuhei Hosoda, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. W2Cゲート電極によるLa-silicate MOSFETの移動度改善, 第61回応用物理学会春季学術講演会, 2014.
• ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 大嶺洋, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現, 第61回応用物理学会春季学術講演会, 2014.
• 小路智也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 立体Si構造における局所的な界面準位密度の抽出, ゲートスタック研究会 ―材料・プロセス・評価の物理―（第19回研究会）, 2014.
• 大嶺洋, ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 角嶋邦之, 岩井洋. La2O３ gate dielectrics for InGaAs channel using ALD process, 最先端研究開発支援プログラム(FIRST)採択課題「グリーン・ナノエレクトロニクスのコア技術開発」最終成果報告会, 2014.
• ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 大嶺洋, 角嶋邦之, 岩井洋. Highly Scalable La2O３/InGaAs Gate Stack with Low Interface State Density, 最先端研究開発支援プログラム(FIRST)採択課題「グリーン・ナノエレクトロニクスのコア技術開発」最終成果報告会, 2014.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristics of Ti, Ni, NiSi2 and Ni3P/n-diamond contacts, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 川那子高暢, 角嶋邦之, 岩井洋. 高速・低損失の電子デバイス／パワーデバイスの先導研究, STARCワークショップ2013, 2013.
• 石川昂, 小路智也, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 筒井一生, 名取研二, 岩井洋. チャージポンピング法を用いた三次元Si構造の界面準位密度測定, 第74回応用物理学会秋季学術講演会, 2013.
• 米澤宏昭, 中島 昭, 西澤 伸一, 大橋 弘通, 筒井一生, 角嶋邦之, 若林整, 岩井洋. AlGaN/GaN系pチャンネルHFETの製作, 第74回応用物理学会秋季学術講演会, 2013.
• 武井優典, 神谷真行, 寺山一真, 米澤宏昭, 齋藤 渉, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 岩井洋. AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 神谷真行, 寺山一真, 武井優典, 齋藤 渉, 角嶋邦之, 若林整, 片岡好則, 筒井一生, 岩井洋. AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性, 第74回応用物理学会秋季学術講演会, 2013.
• 大橋匠, 若林整, 角嶋邦之, 杉井信之, 西山彰, 片岡好則, 名取研二, 筒井一生, 岩井洋. 単層MoS2チャネルを用いたn-MOSFETの性能見積もり, [第74回応用物理学会秋季学術講演会, 2013.
• 松川佳弘, 岡本真里, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 嘉藤貴史, 稲村太一, 佐々木 亮人, 青木 克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究, 第74回応用物理学会秋季学術講演会, 2013.
• 劉 璞誠, 米澤宏昭, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. AlGaNのドライエッチングへのBcl3の影響に関する研究, 第74回応用物理学会秋季学術講演会, 2013.
• 譚錫昊, 岡本真里, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. AlGaN/GaN上のTiSi2電極によるコンタクトの温度依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 元木雅章, 吉原亮, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 宗清修, 川那子高暢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響, 第74回応用物理学会秋季学術講演会, 2013.
• 長谷川明紀, 呉研, 宋 禛漢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上, 第74回応用物理学会秋季学術講演会, 2013.
• 中村嘉基, 細田修平, Tuokedaerhan Kamale, 角嶋邦之, 片岡好則, 西山彰, 若林整, 杉井信之, 筒井一生, 名取研二, 岩井洋. W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価, 第74回応用物理学会秋季学術講演会, 2013.
• 小路智也, 石川昂, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定, 第74回応用物理学会秋季学術講演会, 2013.
• 岡本真里, 松川佳弘, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化, 第74回応用物理学会秋季学術講演会, 2013.
• 今村浩章, 稲村太一, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価, 第74回応用物理学会秋季学術講演会, 2013.
• 鹿国強, 大嶺洋, ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 角嶋邦之, 西山彰, 杉井信之, 片岡好則, 若林整, 筒井一生, 名取研二, 岩井洋. ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響, 第74回応用物理学会秋季学術講演会, 2013.
• 宋 禛漢, 松本一輝, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 服部健雄, 岩井洋. Niシリサイドナノワイヤ抵抗率のNi膜厚依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 小澤健児, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 岩井洋, ト部友二, 安田哲二. La2O3 のALD成長のための原料選択：シクロペンタジエニル錯体とアミディネート錯体の比較, ゲートスタック研究会－材料･プロセス・評価の物理－（第16回研究会）, 2011.
• 佐藤創志, 角嶋邦之, パールハットアヘメト, 大毛利健治, 名取研二, 山田啓作, 岩井洋. Effects of corners of channel cross-section on electrical performance of silicon nanowire field-effect transistors, ゲートスタック研究会－材料･プロセス・評価の物理－（第16回研究会）, 2011.
• 細田倫央, 李映勲, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 岩井洋. 矩形断面SiナノワイヤMOSFETにおけるフォノン散乱に制限された移動度のサイズ依存性, 第72回応用物理学会学術講演会, 2011.
• 叶真一, MokhammadSholihul Hadi, 竇春萌, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希土類酸化物(CeOX)を用いたMIM構造の抵抗スイッチング特性, 第72回応用物理学会学術講演会, 2011.
• 大毛利健二, フェン ウェイ, 佐藤創志, ヘッティアーラッチ・ランガ, 佐藤 基之, 松木 武雄, 角嶋邦之, 岩井洋, 山田啓作. ドレイン電流のランダムテレグラフノイズに相関したFETチャネルポテンシャル揺らぎの実時間直接観測, 第72回応用物理学会学術講演会, 2011.
• フェン ウェイ, ヘッティアーラッチ・ランガ, 佐藤創志, 角嶋邦之, M.Niwa, 岩井洋, 山田啓作, 大毛利健二. Advantages of Silicon Nanowire MOSFETs over Planar MOSFETs Investigated from the Aspect of Drain-Current Noise, 第72回応用物理学会学術講演会, 2011.
• LiWei, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. コンダクタンス法による立体チャネルを有するMOSキャパシタの界面準位密度の評価, 第72回応用物理学会学術講演会, 2011.
• 吉原 亮, 角嶋邦之, パールハットアヘメト, 中塚理, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Ni/Si積層から形成されるNiシリサイドのショットキーダイオードの電流特性, 第72回応用物理学会学術講演会, 2011.
• 田村雄太, 角嶋邦之, 中塚 理, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. NiとSiの積層薄膜によって形成したシリサイドのシート抵抗に対する熱処理温度の影響, 第72回応用物理学会学術講演会, 2011.
• 金原潤, 宮田陽平, 秋田洸平, 筒井一生, 野平博司, 室隆桂之, 木下豊彦, パールハットアヘメト, 角嶋邦之, 服部健雄, 岩井洋. Si中に極浅ドープされたAsの軟X線光電子分光による化学結合状態の検出とその深さ方向分布, 第72回応用物理学会学術講演会, 2011.
• 宮田陽平, 金原潤, 難波覚, 三角元力, 筒井一生, 野平博司, 室隆桂之, 木下豊彦, 角嶋邦之, パールハットアヘメト, 服部健雄, 岩井洋. 軟X線光電子分光法を用いたFin構造中の不純物化学結合状態分析, 第72回応用物理学会学術講演会, 2011.
• 角嶋邦之, 金原潤, 筒井一生, 服部健雄, 岩井洋. 高濃度ボロンドープ飼料の角度分解X線光電子分光による濃度分布解析, 第72回応用物理学会学術講演会, 2011.
• 松本一輝, 小山将央, 呉研, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討, 第72回応用物理学会学術講演会, 2011.
• 鈴木佑哉, 細井隆司, ダリューシュザデ, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析, 第72回応用物理学会学術講演会, 2011.
• 沢尻 侑也, 山下晃司, 小松 新, ダリューシュザデ, 角嶋邦之, 岩井洋, 野平博司. AR-XPSによる(NH４) ２S処理したIn0.53Ga0.47As表面の化学結合状態の評価, 第72回応用物理学会学術講演会, 2011.
• 常石佳奈, 来山大祐, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. W/Tm2O３/n-Si構造キャパシタの電気特性におけるTm2O３膜厚依存性, 第72回応用物理学会学術講演会, 2011.
• Kamale Tuokedaerhan, 金田翼, マイマイティ マイマイティレャアティ, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. La2O3/n-Si 構造に対するPost Deposition Annealの電気特性への影響, 第72回応用物理学会学術講演会, 2011.
• 鈴木 拓也, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 岩井洋, 安田哲二. ALDによるMgO添加La2O3ゲート絶縁膜の形成及び電気特性評価, 第72回応用物理学会学術講演会, 2011.
• 関 拓也, 来山大祐, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. High-k/Si 直接接合構造における界面準位の定量評価について, 第72回応用物理学会学術講演会, 2011.
• 田中 祐樹, 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. シリコン基板上に堆積したナノカーボン薄膜への高温短時間アニーリングの影響, 第72回応用物理学会学術講演会, 2011.
• 幸田みゆき, 小澤健児, 角嶋邦之, パールハットアヘメト, 岩井洋, ト部 友二, 安田 哲二. CVD法によるCeOx絶縁膜の作製と特性評価, 第７１回応用物理学会学術講演会, Sept. 2010.
• 山下 晃司, 角嶋邦之, 岩井洋. HfO2/La2O３/In0.53Ga0.47As構造の熱安定性, 第７１回応用物理学会学術講演会, Sept. 2010.
• 中島 一裕, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. チャージポンピング法による立体Si構造の界面準位密度の評価, 第７１回応用物理学会学術講演会, Sept. 2010.
• 小山 将央, 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋. 窒素導入によるSiナノワイヤ内へのNiシリサイド侵入抑制機構の検討, 第７１回応用物理学会学術講演会, Sept. 2010.
• 李映勲, 角嶋邦之, 白石賢二, 名取研二, 岩井洋. バリスティックナノワイヤトランジスタ性能の太さ依存における状態密度と静電容量のトレードオフ, 第７１回応用物理学会学術講演会, Sept. 2010.
• マイマイティ マイマイティレャアティ, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. High-kゲートスタックMOSFETにおける電子移動度のリモート界面ラフネス散乱依存性, 第７１回応用物理学会学術講演会, Sept. 2010.
• 鈴木 拓也, 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希釈酸素雰囲気熱処理を用いたLaシリケート/Si MOS構造のVFB/Vthシフトの低EOTへの適用, 第７１回応用物理学会学術講演会, Sept. 2010.
• 来山大祐, 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 高温短時間熱処理を用いた希土類MOSキャパシタへのTiNキャップ効果, 第７１回応用物理学会学術講演会, Sept. 2010.
• 田中正興, 金原潤, 宮田陽平, 角嶋邦之, パールハットアヘメト, 室隆桂之, 木下豊彦, 野平博司, 筒井一生, 室田 淳一, 服部健雄, 岩井洋. Siエピタキシャル層にドープされたボロンの軟X線光電子分光, 第７１回応用物理学会学術講演会, Sept. 2010.
• 竇 春萌, マイマイティ マイマイティレャアティ, ダリューシュザデ, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性, 第７１回応用物理学会学術講演会, Sept. 2010.
• 呉研, 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. トンネルFET動作に向けたNiシリサイド/Si接触におけるトンネル電流の観測, 第７１回応用物理学会学術講演会, Sept. 2010.
• 細井隆司, 神田高志, ダリューシュザデ, Yueh Chin Lin, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, Edward Yi Chang, 名取研二, 服部健雄, 岩井洋. 絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性, 第７１回応用物理学会学術講演会, Sept. 2010.
• 金田翼, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Tm-oxide/La2O3構造ゲート絶縁膜の界面特性評価, 第７１回応用物理学会学術講演会, Sept. 2010.
• 小澤健児, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 岩井洋, ト部友二, 安田哲二. La(iPrCp)3 を原料としたLa2O3のALD: Self-limiting 成長条件の明確化, 第７１回応用物理学会学術講演会, Sept. 2010.
• 角嶋邦之, 小柳友常, 来山大祐, 幸田みゆき, 宋在烈, 佐藤創志, 川那子高暢, M. マイマイティ, 舘喜一, M.K. Bera, パールハットアヘメト, 野平博司, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 山田啓作, 岩井洋. LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御, 応用物理学会分科会 シリコンテクノロジー, ，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）, No. 127, pp. 4-8, July 2010.
• 佐藤創志, 角嶋邦之, パールハットアヘメト, 大毛利健二, 名取研二, 岩井洋, 山田啓作. キャリア移動度評価によるシリコンナノワイヤトランジスタの電気特性解析, 電子情報通信学会技術研究報告 pp.11-16, June 2010.
• 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討, 電子情報通信学会技術研究報告 pp.17-22, June 2010.
• 来山大祐, 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. EOT=0.5nmに向けた希土類MOSデバイスの高温短時間熱処理の検討, 電子情報通信学会技術研究報告 pp.43-48, June 2010.
• 佐藤創志, 新井英朗, 角嶋邦之, パールハットアヘメト, 大毛利 健治, 名取研二, 岩井洋, 山田啓作. Siナノワイヤトランジスタの電気特性の断面形状依存症, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-270, Apr. 2010.
• 神田高志, 船水清永, Yueh Chin Lin, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, Edward Yi Chang, 名取研二, 服部健雄, 岩井洋. HfO2/ La2O3/ In0.53 Ga0.47As構造の界面特性の変化, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-141, Mar. 2010.
• 李映勲, 角嶋邦之, 白石賢二, 名取研二, 岩井洋. バリスティックSiナノワイヤトランジスタの電気特性の直径依存性, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-272, Mar. 2010.
• 茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, パールハットアヘメト, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋. 酸化膜中のSiナノワイヤへのNi拡散の制御, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-269, Mar. 2010.
• 田中正興, 星野憲文, 筒井一生, 野平博司, 室隆桂之, 加藤有香子, 木下豊彦, パールハットアヘメト, 角嶋邦之, 服部健雄, 岩井洋. 光電子分光により検出したSi中のAsおよびPの化学結合状態の評価, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-191, Mar. 2010.
• 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 酸素添加がWゲートMOSデバイスの電気特性に与える影響, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-151, Mar. 2010.
• 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. La2O3 MOSデバイスへのアルカリ土類元素キャップによる電気特性の変化, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-098, Mar. 2010.
• 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希土類酸化物をキャップすることによるMOSFETの電気特性の改善, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-097, Mar. 2010.
• 小澤健児, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. La2O3 MOSFETへのCeOxキャップによる電気特性の改善, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-096, Mar. 2010.
• ダリューシュ ザデ, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 界面にLa2O3 絶縁膜層を挿入したHf系high-kゲートMOSFETの評価, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-095, Mar. 2010.
• 来山 大祐, 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 来山大祐，小柳友常，角嶋邦之，パールハット アヘメト，筒井一生，西山彰，杉井信之，名取研二，服部健雄，岩井洋“EOT=0.5nm に向けたTaSi2/La2O3/CeOxゲートスタック構造の検討, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-094, Mar. 2010.
• 金田翼, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Effect of Rare Earth Oxide Capping for La-based Gate Oxides, 複合創造領域シンポジウム, 2010.
• 佐藤創志, 角嶋邦之, パールハットアヘメト, 大毛利健治, 山田啓作, 名取研二, 岩井洋. Influence of the cross-sectional shape for Si nanowire FETs, 複合創造領域シンポジウム, 2010.
• 舘喜一, 角嶋邦之, T. Ernst, S. Cristoloveanu, 岩井洋. Vertically-Stacked Nanowire Transistors for future CMOS, 複合創造領域シンポジウム, 2010.
• AbudukelimuAbudureheman, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. The Effect of Scattering in Drain Region of Ballistic Channel Diode, 複合創造領域シンポジウム, 2010.
• 来山大祐, 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Process Optimization of Rare-Earth Oxides Gated MOS Devices for Future EOT Scaling, 複合創造領域シンポジウム, 2010.
• マイマイティ マイマイティレャアティ, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 岩井洋. Remote Coulomb and roughness scatterings in gate oxide scaling, 複合創造領域シンポジウム, 2010.
• 久保田透, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Spectroscopic analysis of interface state density in high-k/Si structure, 複合創造領域シンポジウム, 2010.
• 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋. Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation, 複合創造領域シンポジウム, 2010.
• 小山将央, 茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Lateral encroachment of Ni silicide into Si nanowire, 複合創造領域シンポジウム, 2010.
• 中島一裕, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Interface state density of 3-D structured Si using charge pumping method, 複合創造領域シンポジウム, 2010.
• 幸田みゆき, 小澤健児, 角嶋邦之, パールハットアヘメト, 岩井洋, ト部友二, 安田哲二. Electrical characterization of CVD deposited Ce oxides, 複合創造領域シンポジウム, 2010.
• 小澤健児, 幸田みゆき, 角嶋邦之, パールハットアヘメト, 岩井洋, ト部友二, 安田哲二. Self-limited growth of La oxides with ALD, 複合創造領域シンポジウム, 2010.
• ダリューシュザデ, 神田高志, 細井隆司, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As, 複合創造領域シンポジウム, 2010.
• 竇春萌, 向井弘樹, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Feasibility study of Ce oxide for resistive RAM application, 複合創造領域シンポジウム, 2010.
• 呉研, 茂森直登, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface, 複合創造領域シンポジウム, 2010.
• 川那子高暢, 鈴木 拓也, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric, 複合創造領域シンポジウム, 2010.
• 李映勲, 角嶋邦之, 名取研二, 岩井洋. Diameter-dependent injection velocity of ballistic Si nanowire MOSFETs, 複合創造領域シンポジウム, 2010.
• 山下晃司, 野平博司, 角嶋邦之, 岩井洋. HfO2/La2O３/In0.53Ga0.47As構造の熱安定性, 第７１回応用物理学会学術講演会, 2010.
• 小柳友常, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Flatband Voltage Shift of La-based Gate Oxides with Alkali-earth-elements Incorporation, 複合創造領域シンポジウム, 2010.
• Yusuke Kobayashi, Kuniyuki KAKUSHIMA, Ahmet Parhat, V.Ramgopal Rao, KAZUO TSUTSUI, HIROSHI IWAI. Short-channel effects on FinFETs induced by inappropriate fin widths, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Tomotsune Koyanagi, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Influence of Alkali Earth Elements Capping on Electrical Characteristics of La2O3 Gated MOS Device, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Katuya Matano, Kuniyuki KAKUSHIMA, Ahmet Parhat, Nobuyuki Sugii, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Threshold Voltage Control in p-MOSFET with High-k Gate dielectric, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Wataru Hosoda, Kenji Ozawa, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. A Study of Schottky Barrier Height Modulation of NiSi by Interlayer Insertion and Its Application to SOI SB-MOSFETs, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Kiyohisa Funamizu, Takashi Kanda, Y.C.Lin, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, E.Y.Chang, KENJI NATORI, takeo hattori, HIROSHI IWAI. Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Hideaki Arai, Hideyuki Kamimura, Soshi Sato, Kuniyuki KAKUSHIMA, Ahmet Parhat, 西山彰, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Annealing Reaction for Ni Silicidation of Si Nanowire, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Hiroto Nakayama, Kuniyuki KAKUSHIMA, Ahmet Parhat, E.Ikenaga, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOS Capacitors, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Shiraishi, KENJI NATORI, HIROSHI IWAI. Size-Dependent Transport Characteristics of Ballistic Silicon Nanowire FETs, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Miyuki Kouda, Naoto Umezawa, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, Kenji Shiraishi, 知京豊裕, Keisaku Yamada, HIROSHI IWAI. Charged defects reduction in gate insulator with multivalent materials, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• A.Abudukelimu, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Current-Voltage Characteristics of Ballistic Nanowire MOSFET by Numerical Analysis, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• M.Mamatrishat, Miyuki Kouda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Study on Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/ La2O3 Gate Stacks, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Soshi Sato, Hideaki Arai, Kuniyuki KAKUSHIMA, Ahmet Parhat, HIROSHI IWAI. Evaluation of Channel Potential Profile of Si Nanowire Field Effect Transistor, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Experimental Investigation of VFB shift and Effective Mobility in La2O3 MOS Devices, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Effect of Ultrathin Si Passivation Layer for La2O3/Ge MOS structure, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• M.K. Bera, Jaeyeol Song, Ahmet Parhat, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Rare-earth based mixed oxide as high-k gate dielectrics for Ge MOSFET, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• 船水清永, Yueh-Chin Lin, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, Edward Yi Chang, 服部健雄, 岩井洋. High-k ゲート絶縁膜を用いたInxGa1-xAs MOS構造の研究, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 837, July 2009.
• 新井英朗, 上村英之, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. SiナノワイヤへのNiシリサイド形成の評価, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 901, Mar. 2009.
• 岩井洋, 山田啓作, 大毛利健二, 筒井一生, 角嶋邦之, パールハットアヘメト, 佐藤創志, 上村英之, 新井英朗. トップダウンSiナノワイヤFETの作製法とその電気的特性のサーベイ, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 0, pp. 147, Mar. 2009.
• 小林勇介, 角嶋邦之, パールハットアヘメト, V.R. Rao, 筒井一生, 岩井洋. FinFETの構造ばらつきによるオン電流のばらつきの検討, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 898, Mar. 2009.
• 又野克哉, 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Ge層挿入によるLa2O3-MOSキャパシタのVFB制御, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 854, Mar. 2009.
• 岩井洋, 名取研二, 白石賢二, 山田啓作, 大毛利健二, 筒井一生, 角嶋邦之, パールハットアヘメト. シリコンナノワイヤFET研究の現状とロードマップ作成の考え方, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 0, pp. 155, Mar. 2009.
• 幸田みゆき, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. CeO2 /La2O3積層ゲート絶縁膜のリーク電流特性の膜厚依存性, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 854, Mar. 2009.
• 細田亘, 野口浩平, パールハットアヘメト, 角嶋邦之, 筒井一生, 杉井信之, 服部健雄, 岩井洋. 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用, 第56回応用物理学関係連合講演会, 第56回応用物理学会予稿集, 応用物理学会, No. 2, pp. 868, Mar. 2009.
• 中山寛人, 日野雅文, 永田晃基, 小瀬村大亮, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 小椋厚志, 服部健雄, 岩井洋. As注入とSiN応力膜によるpoly-Siへの歪記憶の検討, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 869, Mar. 2009.
• 小柳友常, 岡本晃一, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. La2O3MOSデバイスへのSrO導入による電気特性の変化, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 854, Mar. 2009.
• 星野憲文, 中川恭成, 野平博司, 室 隆桂之, 加藤 有香子, 甲斐隆行, 金成国, パールハットアヘメト, 角嶋邦之, 水野文二, 木下 豊彦, 筒井一生, 服部健雄, 岩井洋. 光電子分光によるSi中Asの化学結合状態評価, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 883, Mar. 2009.
• 宋在烈, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. 極薄Si界面層を挿入したLa2O3/Ge MIS構造における界面準位密度低減に関する検討, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 840, Mar. 2009.
• 野平博司, 今陽一郎, 北村幸司, 幸田みゆき, 角嶋邦之, 岩井 洋. CeO2 /La2O3/Si(100)構造の熱安定性(2), 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 853, Mar. 2009.
• 李映勲, 永田貴弘, 角嶋邦之, 白石賢二, 名取研二, 岩井洋. 引っ張り歪みSiナノワイヤの電子構造とバリスティック伝導, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 902, Mar. 2009.
• 佐藤創志, 上村英之, 新井英朗, 角嶋邦之, パールハットアヘメト, 大毛利健二, 筒井一生, 杉井信之, 服部健雄, 山田啓作, 岩井洋. 四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位の測定, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 901, Mar. 2009.
• 幸田みゆき, 梅澤直人, 角嶋邦之, パールハットアヘメト, 白石賢二, 知京豊裕, 山田啓作, 岩井洋, 服部健雄. 低電子揺動Ce酸化物を利用したhigh－k膜中の固定電荷の抑制, 応用物理学会 薄膜･表面物理分科会/シリコンテクノロジー分科会共催特別研究会 ゲートスタック研究会－材料･プロセス・評価の物理－（第14回研究会）, ゲートスタック研究会－材料･プロセス・評価の物理－（第14回研究会）, ゲートスタック研究会, pp. 21, Jan. 2009.
• 中川恭成, 野平博司, 酒井一憲, 横田 知之, 甲斐 隆行, 金成国, パールハットアヘメト, 角嶋邦之, 水野文二, 服部健雄, 筒井一生, 岩井洋. 光電子分光によるSi中Asの活性化状態の深さ方向分布評価, 秋季第69回応用物理学会学術講演会, 応用物理学会, 応用物理学会, No. 2, pp. 738, Sept. 2008.
• 小林勇介, 角嶋邦之, パールハットアヘメト, ラオ ラムゴパル, 筒井一生, 岩井洋. FinFETの閾値変動における短チャネル効果による影響の切り分け, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 753, Sept. 2008.
• 又野克哉, 野口 浩平, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 751, Sept. 2008.
• 細田亘, 野口浩平, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 751, Sept. 2008.
• 酒井一憲, 中川恭成, 横田知之, 金成国, 岡下勝己, 佐々木雄一朗, パールハットアヘメト, 角嶋邦之, 水野文二, 服部健雄, 筒井一生, 岩井洋. 3次元Fin構造中不純物プロファイリングのための反復犠牲酸化エッチング, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 749, Sept. 2008.
• 中山寛人, 日野雅文, 服部健雄, 杉井信之, 筒井一生, パールハットアヘメト, 角嶋邦之, 小椋厚志, 永田 晃基, 吉田 哲也, 小瀬村大亮, 岩井洋. Ar注入とSiN応力膜によるパターン付Si基板への歪記憶技術の検討, 秋季第69回応用物理学会学術講演会, 応用物理学会, 応用物理学会, No. 2, pp. 743, Sept. 2008.
• 佐藤創志, 上村英之, 新井英朗, 大毛利健二, 角嶋邦之, パールハットアヘメト, 筒井一生, 服部健雄, 杉井信之, 山田啓作, 岩井洋. Si Finのアスペクト比最適化により作製した円形Siナノワイヤの形状に関する研究, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 735, Sept. 2008.
• 船水清永, 幸田みゆき, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. CeOX/La2O3積層ゲート絶縁膜構造の膜特性評価, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 703, Sept. 2008.
• 川那子高暢, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. La2O3/Si直接接合構造における界面特性の評価, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 702, Sept. 2008.
• 小柳友常, 岡本晃一, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. La203系MOSFETへのMg挿入による電気特性の変化, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 702, Sept. 2008.
• 新井英朗, 上村英之, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 服部健雄, 杉井信之, 岩井洋. 熱酸化によるSi ナノワイヤの作製とその電気特性, 秋季第69回応用物理学会学術講演会, 応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 768, Sept. 2008.
• 李映勲, 永田 貴弘, 白石 賢二, 角嶋邦之, 岩井洋. 第一原理計算によるシリコンナノワイヤの電子構造解析, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 766, Sept. 2008.
• 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Sub-1.0nm EOTにおけるW／La2O3ゲートスタックｎMOSFETの電子移動度解析, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, No. 2, pp. 849, Mar. 2008.
• パールハット アヘメト, 筒井一生, 角嶋邦之, 杉井 信之, 知京 豊裕, 服部健雄, 長田 貴弘, 岩井洋. 高濃度n+-Si 及びp+-Si基板上のNiシリサイドの熱安定性の違い, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, No. 0, pp. 896, Mar. 2008.
• 野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Er層界面挿入によるNiシリサイドのショットキー障壁変調技術, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 879, Mar. 2008.
• 岡本晃一, 舘喜一, 足立学, 佐藤創志, 角嶋邦之, パールハットアヘメト, 杉井信之, 筒井一生, 服部健雄, 岩井洋. Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会 予稿集, 応用物理学会, No. 2, pp. 848, Mar. 2008.
• 幸田みゆき, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. CeO2/La2O3積層ゲート絶縁膜の電気特性評価, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 850, Mar. 2008.
• 北村 幸司, 舘喜一, 角嶋邦之, 野平 博司, 岩井洋. HfLaOx/SiO2/Siの組成分布に及ぼす熱処理の効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 848, Mar. 2008.
• 中野 美尚, 村上 裕彦, DARYOUSHHASSANZADEH, パールハットアヘメト, 角嶋邦之, 岩井洋. 基板並行方向へのCNT成長制御, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 992, Mar. 2008.
• 上村英之, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 大毛利 健二, 服部健雄, 岩井洋. 熱酸化によるSiナノワイヤ形状の酸化条件依存性, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 913, Mar. 2008.
• 酒井一憲, 渡邉将光, 中川恭成, 金 成国, 岡下 勝己, 佐々木雄一朗, パールハットアヘメト, 角嶋邦之, 水野 文二, 服部健雄, 筒井一生, 岩井洋. 極浅接合プロファイリングのための反復犠牲酸化エッチング技術, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 900, Mar. 2008.
• 足立学, 岡本晃一, 舘喜一, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. HfO2/ La2O3積層キャパシタにおけるLa2O3層に依存した界面層成長抑制の効果, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 849, Mar. 2008.
• 宋在烈, 舘喜一, 岡本晃一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Laシリケート層を界面に用いたhigh-k/Si MOS構造の電気特性検討, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 849, Mar. 2008.
• 小林 勇介, 角嶋邦之, パールハットアヘメト, 筒井一生, V.R. Rao, 岩井洋. FinFETにおけるショートチャンネル効果のフィン幅依存症, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 925, Mar. 2008.

特許など

• 角嶋邦之, 川那子高暢, 宗清修, LEIYIMING, 古橋　壮之, 三浦　成久. 半導体装置及びその製造方法. 特許. 登録. 国立大学法人東京工業大学, 三菱電機株式会社. 2014/08/28. 特願2014-173714. 2016/04/07. 特開2016-048758. 特許第6270667号. 2018/01/12 2018.
• 角嶋邦之, Dou Chunmeng, AHMETPARHAT, 岩井洋, 片岡　好則. 抵抗変化型記憶装置. 特許. 登録. 国立大学法人東京工業大学, 東芝マテリアル株式会社. 2013/03/12. 特願2014-504932. 2015/08/03. 再表2013/137262. 特許第6082383号. 2017/01/27 2017.
• AHMETPARHAT, マイマイティ マイマイティレシャティ, 岩井洋, 服部健雄, 筒井一生, 角嶋邦之. 半導体素子. 特許. 公開. 国立大学法人東京工業大学. 2011/12/27. 特願2011-285538. 2013/07/08. 特開2013-135135. 2013.
• 角嶋邦之, 岩井洋, アヘメト パールハット, 佐藤　創志, 山田　啓作, 大毛利　健治. ナノワイヤトランジスタ及びその製造方法. 特許. 公開. 国立大学法人東京工業大学, 学校法人早稲田大学. 2010/03/31. 特願2010-079971. 2011/10/20. 特開2011-211126. 2011.
• 角嶋邦之, 岩井洋, アヘメト パールハット, 佐藤　創志, 山田　啓作, 大毛利　健治. ナノワイヤトランジスタ及びその製造方法. 特許. 公開. 国立大学法人東京工業大学, 学校法人早稲田大学. 2010/03/31. 特願2010-079972. 2011/10/20. 特開2011-211127. 2011.
• Parhat　AHMET, 岩井洋, 筒井一生, 角嶋邦之, 服部　健雄, 知京　豊裕. 半導体装置及びコンデンサ. 特許. 公開. 国立大学法人東京工業大学, 独立行政法人 物質・材料研究機構. 2007/03/06. 特願2007-056151. 2008/09/18. 特開2008-218827. 2008.
• 岩井洋, 筒井一生, Parhat　AHMET, 角嶋邦之, 松元　道一, 奥野　泰利, 久保田　正文, 上田　誠二. 半導体装置及びその製造方法. 特許. 公開. 国立大学法人東京工業大学, 松下電器産業　株式会社. 2006/05/30. 特願2006-149763. 2007/12/13. 特開2007-324187. 2007.

学位論文

• ナノ構造の製作と評価に用いるマイクロマシンツールに関する研究,  本文,  Doctor of Engineering,  The University of Tokyo,  2004/03/--, 

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